Abstract

GaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There are low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect of growth rate on dislocations in GaN films grown on PSS is investigated by TEM. It is found that dislocations density decreases as the growth rates decrease. And the performance of InGaN-based LEDs on different PSS is analyzed. The performance of LEDs grown on different PSS is determined by slanted angle and fill factor simultaneously.

© 2011 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
    [CrossRef]
  2. C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
    [CrossRef]
  3. W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006).
    [CrossRef]
  4. H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
    [CrossRef] [PubMed]
  5. T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
    [CrossRef]
  6. K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008).
    [CrossRef]
  7. H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
    [CrossRef]
  8. H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
    [CrossRef]
  9. H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008).
    [CrossRef]
  10. J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
    [CrossRef]
  11. H. Lin, S. Liu, X. S. Zhang, B. L. Liu, and X. C. Ren, “Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique,” Acta Phys. Sin-Ch. Ed. 58, 959–963 (2009).
  12. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
    [CrossRef]
  13. Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010).
    [CrossRef]
  14. J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010).
    [CrossRef]
  15. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997).
    [CrossRef]
  16. L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
    [CrossRef]
  17. T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
    [CrossRef] [PubMed]

2010 (3)

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010).
[CrossRef]

J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010).
[CrossRef]

2009 (1)

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

2008 (4)

K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008).
[CrossRef]

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
[CrossRef]

H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008).
[CrossRef]

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

2007 (2)

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
[CrossRef]

T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007).
[CrossRef] [PubMed]

2006 (1)

W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006).
[CrossRef]

2002 (2)

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

2001 (1)

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

2000 (1)

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

1997 (1)

S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997).
[CrossRef]

Carr, E. C.

S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997).
[CrossRef]

Chang, C. J.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Chang, J. Y.

K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008).
[CrossRef]

Chang, S. J.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

Chao, C. W.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Chen, C. H.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

Chen, L. C.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Chen, W. C.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Cheng, J. H.

J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010).
[CrossRef]

Chi, G. C.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

Chi, S. W. S.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Chien, W. T.

Chiu, C. H.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Chyi, J. I.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008).
[CrossRef]

Deguchi, K.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

DenBaars, S. P.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Erikson, H. I.

S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997).
[CrossRef]

Fini, P.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Gao, H. Y.

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
[CrossRef]

Gao, K. F.

Girolami, G.

S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997).
[CrossRef]

Hsu, H. C.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Hsu, T. C.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Huang, H. W.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Huang, J. J.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Huh, C.

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

Kannappan, S.

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
[CrossRef]

Keller, S.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Kim, D. J.

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

Kim, H. S.

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

Kim, M. D.

Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010).
[CrossRef]

Kim, S. W.

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

Kim, Y. H.

Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010).
[CrossRef]

Kuo, C. H.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

Kuo, H. C.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Lai, C. F.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Lee, B. D.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Lee, C. M.

H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008).
[CrossRef]

Lee, C. R.

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
[CrossRef]

Lee, G. Y.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Lee, I. H.

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
[CrossRef]

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

Lee, J. M.

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

Lee, K. T.

K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008).
[CrossRef]

Lee, S. H.

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
[CrossRef]

Lee, T. X.

Lee, Y. C.

K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008).
[CrossRef]

Leung, K. M.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Li, J. M.

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
[CrossRef]

Liao, W. C.

J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010).
[CrossRef]

Lin, B. W.

J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010).
[CrossRef]

Lin, C. H.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Lin, H. C.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008).
[CrossRef]

Lin, R. S.

H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008).
[CrossRef]

Liu, H. H.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Liu, T. C.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Lu, C. M.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Lu, T. C.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Ludowise, M. J.

S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997).
[CrossRef]

McCarthy, L.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Mishra, U. K.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Mitani, T.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Mukai, T.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Narukawa, Y.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Niki, I.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Noh, Y. K.

Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010).
[CrossRef]

Oh, J. E.

Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010).
[CrossRef]

Pan, C. J.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

Park, S. J.

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

Peng, W. C.

W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006).
[CrossRef]

Rodwell, M. J. W.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Rosner, S. J.

S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997).
[CrossRef]

Ruh, H.

Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010).
[CrossRef]

Sano, M.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Seol, K. W.

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
[CrossRef]

Shen, K. C.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Sheu, J. K.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

Shiao, W. Y.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Shioji, S.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Smorchkova, I.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Song, J. C.

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
[CrossRef]

Sonobe, S.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Speck, J.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Su, Y. K.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

Sun, C. C.

Tang, T. Y.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Ting, S. Y.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Wang, G. H.

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
[CrossRef]

Wang, S. C.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Wang, T. C.

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Wu, L. W.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

Wu, Y. S.

J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010).
[CrossRef]

W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006).
[CrossRef]

Xing, H.

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

Yamada, M.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Yan, F. W.

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
[CrossRef]

Yang, C. C.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Yao, C. L.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Yeh, J. H.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

Yu, C. C.

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Zeng, Y. P.

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
[CrossRef]

Zhang, Y.

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
[CrossRef]

Appl. Phys. Lett. (4)

W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006).
[CrossRef]

J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010).
[CrossRef]

S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997).
[CrossRef]

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002).
[CrossRef]

H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008).
[CrossRef]

J. Appl. Phys. (3)

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009).
[CrossRef]

C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000).
[CrossRef]

Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010).
[CrossRef]

J. Cryst. Growth (1)

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007).
[CrossRef]

J. Electrochem. Soc. (2)

K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008).
[CrossRef]

H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010).
[CrossRef]

Jpn. J. Appl. Phys. (1)

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002).
[CrossRef]

Nanotechnology (1)

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008).
[CrossRef] [PubMed]

Opt. Express (1)

Solid-State Electron. (1)

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008).
[CrossRef]

Other (1)

H. Lin, S. Liu, X. S. Zhang, B. L. Liu, and X. C. Ren, “Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique,” Acta Phys. Sin-Ch. Ed. 58, 959–963 (2009).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1

The plan-view SEM images of the GaN epi-layers grown on PSS with the shape of 3.0/2.0/1.5 μm × μm × μm: (a) 0 min, (b) 3 min, (c) 10 min and (d) 30 min after GaN nucleation layer, respectively.

Fig. 2
Fig. 2

(a)-(c) SEM images of epilayers grown on the PSS for various growth rates: 2.2 μm/h, 1.9μm/h and 1.6 μm/h, respectively. (d)-(f) Cross-section TEM images of the GaN epilayers corresponding to sample D, E and F, respectively.

Fig. 3
Fig. 3

FWHM of (002) and (102) rocking-curve peaks of epilayers grown on the PSS for various growth rates: 2.2 μm/h, 1.9μm/h and 1.6 μm/h, respectively.

Fig. 4
Fig. 4

[(a)-(d)] The Plan view CL mapping of 3 μm epilayers grown on sample G, H, I and J.

Fig. 5
Fig. 5

The CL dark density and FWHM of the rocking curve for both the symmetric (002) and asymmetric (102) is plotted as a function of fill factor.

Fig. 6
Fig. 6

The ESD yield of LEDs grown on sample A, B, C and D is plotted as a function of fill factor.

Fig. 7
Fig. 7

The plot of output power of LEDs at injection current of 20 mA as the function of slanted angles.

Metrics