B. S. Passmore, D. C. Adams, T. Ribaudo, D. Wasserman, S. Lyon, P. Davids, W. W. Chow, and E. A. Shaner, “Observation of Rabi splitting from surface plasmon coupled conduction state transitions in electrically excited InAs quantum dots,” Nano Lett. 11(2), 338–342 (2011).
[Crossref]
[PubMed]
K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” J. Appl. Phys. 101(3), 033104 (2007).
[Crossref]
R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10-1-3) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]
W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature 424(6950), 824–830 (2003).
[Crossref]
[PubMed]
W. Zhang, A. O. Govorov, and G. W. Bryant, “Semiconductor-metal nanoparticle molecules: hybrid excitons and the nonlinear fano effect,” Phys. Rev. Lett. 97(14), 146804 (2006).
[Crossref]
[PubMed]
M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[Crossref]
C. F. Lai, J. Y. Chi, H. H. Yen, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, C. Y. Huang, and W. Y. Yeh, “Polarized light emission from photonic crystal light-emitting diodes,” Appl. Phys. Lett. 92(24), 243118 (2008).
[Crossref]
C. F. Lai, J. Y. Chi, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, and W. Y. Yeh, “Anisotropy of light extraction from GaN two-dimensional photonic crystals,” Opt. Express 16(10), 7285–7294 (2008), http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-16-10-7285 .
[Crossref]
[PubMed]
C. F. Lu, C. H. Liao, C. Y. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Reduction of the efficiency droop effect of a light-emitting diode through surface plasmon coupling,” Appl. Phys. Lett. 96(26), 261104 (2010).
[Crossref]
K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]
D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref]
[PubMed]
K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]
D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]
N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, “Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(24), 243506 (2007).
[Crossref]
H. L. Chen, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Characteristics of light emitter coupling with surface plasmons in air/metal/dielectric grating structures,” J. Opt. Soc. Am. B 26(5), 923–929 (2009).
[Crossref]
K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]
C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, C. C. Yang, C. W. Hsu, and L. C. Chen, “Prestrained effect on the emission properties of InGaN/GaN quantum-well structures,” Appl. Phys. Lett. 89(5), 051913 (2006).
[Crossref]
Y. C. Cheng, C. M. Wu, M. K. Chen, C. C. Yang, Z. C. Feng, G. A. Li, J. R. Yang, A. Rosenauer, and K. J. Ma, “Improvements of InGaN/GaN quantum well interfaces and radiative efficiency with InN interfacial layers,” Appl. Phys. Lett. 84(26), 5422–5424 (2004).
[Crossref]
C. F. Huang, T. C. Liu, Y. C. Lu, W. Y. Shiao, Y. S. Chen, J. K. Wang, C. F. Lu, and C. C. Yang, “Enhanced efficiency and reduced spectral shift of green light-emitting-diode epitaxial structure with prestrained growth,” J. Appl. Phys. 104(12), 123106 (2008).
[Crossref]
Y. C. Cheng, C. M. Wu, M. K. Chen, C. C. Yang, Z. C. Feng, G. A. Li, J. R. Yang, A. Rosenauer, and K. J. Ma, “Improvements of InGaN/GaN quantum well interfaces and radiative efficiency with InN interfacial layers,” Appl. Phys. Lett. 84(26), 5422–5424 (2004).
[Crossref]
C. F. Lai, J. Y. Chi, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, and W. Y. Yeh, “Anisotropy of light extraction from GaN two-dimensional photonic crystals,” Opt. Express 16(10), 7285–7294 (2008), http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-16-10-7285 .
[Crossref]
[PubMed]
C. F. Lai, J. Y. Chi, H. H. Yen, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, C. Y. Huang, and W. Y. Yeh, “Polarized light emission from photonic crystal light-emitting diodes,” Appl. Phys. Lett. 92(24), 243118 (2008).
[Crossref]
M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[Crossref]
B. S. Passmore, D. C. Adams, T. Ribaudo, D. Wasserman, S. Lyon, P. Davids, W. W. Chow, and E. A. Shaner, “Observation of Rabi splitting from surface plasmon coupled conduction state transitions in electrically excited InAs quantum dots,” Nano Lett. 11(2), 338–342 (2011).
[Crossref]
[PubMed]
W. H. Chuang, J. Y. Wang, C. C. Yang, and Y. W. Kiang, “Study on the decay mechanisms of surface plasmon coupling features with a light emitter through time-resolved simulations,” Opt. Express 17(1), 104–116 (2009), http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-17-1-104 .
[Crossref]
[PubMed]
H. L. Chen, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Characteristics of light emitter coupling with surface plasmons in air/metal/dielectric grating structures,” J. Opt. Soc. Am. B 26(5), 923–929 (2009).
[Crossref]
W. H. Chuang, J. Y. Wang, C. C. Yang, and Y. W. Kiang, “Numerical study on quantum efficiency enhancement of a light-emitting diode based on surface plasmon coupling with a quantum well,” IEEE Photon. Technol. Lett. 20(16), 1339–1341 (2008).
[Crossref]
W. H. Chuang, J. Y. Wang, C. C. Yang, and Y. W. Kiang, “Differentiating the contributions between localized surface plasmon and surface plasmon polariton on a one-dimensional metal grating in coupling with a light emitter,” Appl. Phys. Lett. 92(13), 133115 (2008).
[Crossref]
K. L. Kelly, E. Coronado, L. L. Zhao, and G. C. Schatz, “The optical properties of metal nanoparticles: the influence of size, shape, and dielectric environment,” J. Phys. Chem. B 107(3), 668–677 (2003).
[Crossref]
B. S. Passmore, D. C. Adams, T. Ribaudo, D. Wasserman, S. Lyon, P. Davids, W. W. Chow, and E. A. Shaner, “Observation of Rabi splitting from surface plasmon coupled conduction state transitions in electrically excited InAs quantum dots,” Nano Lett. 11(2), 338–342 (2011).
[Crossref]
[PubMed]
H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure,” J. Phys. D Appl. Phys. 41(22), 225104 (2008).
[Crossref]
H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]
R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10-1-3) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]
W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature 424(6950), 824–830 (2003).
[Crossref]
[PubMed]
C. Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J. S. Nelson, “GaInN/GaN growth optimization for high-power green light-emitting diodes,” Appl. Phys. Lett. 85(6), 866–868 (2004).
[Crossref]
J. Y. Yan, W. Zhang, S. Duan, X. G. Zhao, and A. O. Govorov, “Optical properties of coupled metal-semiconductor and metal-molecule nanocrystal complexes: Role of multipole effects,” Phys. Rev. B 77(16), 165301 (2008).
[Crossref]
J. H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer, and F. A. Ponce, “Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes,” Appl. Phys. Lett. 92(10), 101113 (2008).
[Crossref]
W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature 424(6950), 824–830 (2003).
[Crossref]
[PubMed]
A. Neogi, C.-W. Lee, H. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonovitch, “Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,” Phys. Rev. B 66(15), 153305 (2002).
[Crossref]
R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10-1-3) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]
Y. C. Cheng, C. M. Wu, M. K. Chen, C. C. Yang, Z. C. Feng, G. A. Li, J. R. Yang, A. Rosenauer, and K. J. Ma, “Improvements of InGaN/GaN quantum well interfaces and radiative efficiency with InN interfacial layers,” Appl. Phys. Lett. 84(26), 5422–5424 (2004).
[Crossref]
J. H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer, and F. A. Ponce, “Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes,” Appl. Phys. Lett. 92(10), 101113 (2008).
[Crossref]
N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, “Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(24), 243506 (2007).
[Crossref]
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[Crossref]
A. S. Rosenthal and T. Ghannam, “Dipole nanolasers: a study of their quantum properties,” Phys. Rev. A 79(4), 043824 (2009).
[Crossref]
N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, “Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(24), 243506 (2007).
[Crossref]
J. Y. Yan, W. Zhang, S. Duan, X. G. Zhao, and A. O. Govorov, “Optical properties of coupled metal-semiconductor and metal-molecule nanocrystal complexes: Role of multipole effects,” Phys. Rev. B 77(16), 165301 (2008).
[Crossref]
W. Zhang, A. O. Govorov, and G. W. Bryant, “Semiconductor-metal nanoparticle molecules: hybrid excitons and the nonlinear fano effect,” Phys. Rev. Lett. 97(14), 146804 (2006).
[Crossref]
[PubMed]
J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92(26), 261103 (2008).
[Crossref]
R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10-1-3) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005).
[Crossref]
C. F. Lu, C. H. Liao, C. Y. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Reduction of the efficiency droop effect of a light-emitting diode through surface plasmon coupling,” Appl. Phys. Lett. 96(26), 261104 (2010).
[Crossref]
C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, C. C. Yang, C. W. Hsu, and L. C. Chen, “Prestrained effect on the emission properties of InGaN/GaN quantum-well structures,” Appl. Phys. Lett. 89(5), 051913 (2006).
[Crossref]
C. F. Lai, J. Y. Chi, H. H. Yen, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, C. Y. Huang, and W. Y. Yeh, “Polarized light emission from photonic crystal light-emitting diodes,” Appl. Phys. Lett. 92(24), 243118 (2008).
[Crossref]
C. F. Lai, J. Y. Chi, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, and W. Y. Yeh, “Anisotropy of light extraction from GaN two-dimensional photonic crystals,” Opt. Express 16(10), 7285–7294 (2008), http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-16-10-7285 .
[Crossref]
[PubMed]
C. F. Huang, T. C. Liu, Y. C. Lu, W. Y. Shiao, Y. S. Chen, J. K. Wang, C. F. Lu, and C. C. Yang, “Enhanced efficiency and reduced spectral shift of green light-emitting-diode epitaxial structure with prestrained growth,” J. Appl. Phys. 104(12), 123106 (2008).
[Crossref]
K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]
K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]
D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Localized surface plasmon-induced emission enhancement of a green light-emitting diode,” Nanotechnology 19(34), 345201 (2008).
[Crossref]
[PubMed]
D. M. Yeh, C. F. Huang, C. Y. Chen, Y. C. Lu, and C. C. Yang, “Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,” Appl. Phys. Lett. 91(17), 171103 (2007).
[Crossref]
C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, C. C. Yang, C. W. Hsu, and L. C. Chen, “Prestrained effect on the emission properties of InGaN/GaN quantum-well structures,” Appl. Phys. Lett. 89(5), 051913 (2006).
[Crossref]
C. F. Lai, J. Y. Chi, H. H. Yen, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, C. Y. Huang, and W. Y. Yeh, “Polarized light emission from photonic crystal light-emitting diodes,” Appl. Phys. Lett. 92(24), 243118 (2008).
[Crossref]
C. F. Huang, T. Y. Tang, J. J. Huang, W. Y. Shiao, C. C. Yang, C. W. Hsu, and L. C. Chen, “Prestrained effect on the emission properties of InGaN/GaN quantum-well structures,” Appl. Phys. Lett. 89(5), 051913 (2006).
[Crossref]
Y. L. Li, Y. R. Huang, and Y. H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
[Crossref]
H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure,” J. Phys. D Appl. Phys. 41(22), 225104 (2008).
[Crossref]
H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10-10) and (10-1-1) planes,” Appl. Phys. Lett. 92(9), 091105 (2008).
[Crossref]
K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” J. Appl. Phys. 101(3), 033104 (2007).
[Crossref]
K. L. Kelly, E. Coronado, L. L. Zhao, and G. C. Schatz, “The optical properties of metal nanoparticles: the influence of size, shape, and dielectric environment,” J. Phys. Chem. B 107(3), 668–677 (2003).
[Crossref]
G. Sun and J. B. Khurgin, “Plasmon enhancement of luminescence by metal nanoparticles,” IEEE J. Sel. Top. Quantum Electron. 17(1), 110–118 (2011).
[Crossref]
G. Sun, J. B. Khurgin, and C. C. Yang, “Impact of high-order surface plasmon modes of metal nanoparticles on enhancement of optical emission,” Appl. Phys. Lett. 95(17), 171103 (2009).
[Crossref]
J. B. Khurgin, G. Sun, and R. A. Soref, “Enhancement of luminescence efficiency using surface plasmon polaritons: Figures of merit,” J. Opt. Soc. Am. B 24(8), 1968–1980 (2007).
[Crossref]
G. Sun, J. B. Khurgin, and R. A. Soref, “Practicable enhancement of spontaneous emission using surface plasmons,” Appl. Phys. Lett. 90(11), 111107 (2007).
[Crossref]
K. C. Shen, C. H. Liao, Z. Y. Yu, J. Y. Wang, C. H. Lin, Y. W. Kiang, and C. C. Yang, “Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling,” J. Appl. Phys. 108(11), 113101 (2010).
[Crossref]
C. F. Lu, C. H. Liao, C. Y. Chen, C. Hsieh, Y. W. Kiang, and C. C. Yang, “Reduction of the efficiency droop effect of a light-emitting diode through surface plasmon coupling,” Appl. Phys. Lett. 96(26), 261104 (2010).
[Crossref]
W. H. Chuang, J. Y. Wang, C. C. Yang, and Y. W. Kiang, “Study on the decay mechanisms of surface plasmon coupling features with a light emitter through time-resolved simulations,” Opt. Express 17(1), 104–116 (2009), http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-17-1-104 .
[Crossref]
[PubMed]
H. L. Chen, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Characteristics of light emitter coupling with surface plasmons in air/metal/dielectric grating structures,” J. Opt. Soc. Am. B 26(5), 923–929 (2009).
[Crossref]
W. H. Chuang, J. Y. Wang, C. C. Yang, and Y. W. Kiang, “Numerical study on quantum efficiency enhancement of a light-emitting diode based on surface plasmon coupling with a quantum well,” IEEE Photon. Technol. Lett. 20(16), 1339–1341 (2008).
[Crossref]
W. H. Chuang, J. Y. Wang, C. C. Yang, and Y. W. Kiang, “Differentiating the contributions between localized surface plasmon and surface plasmon polariton on a one-dimensional metal grating in coupling with a light emitter,” Appl. Phys. Lett. 92(13), 133115 (2008).
[Crossref]
K. C. Shen, C. Y. Chen, C. F. Huang, J. Y. Wang, Y. C. Lu, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure,” Appl. Phys. Lett. 92(1), 013108 (2008).
[Crossref]
K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, “Enhanced and partially polarized output of a light-emitting diode with Its InGaN/GaN quantum well coupled with surface plasmons on a metal grating,” Appl. Phys. Lett. 93(23), 231111 (2008).
[Crossref]
J.-Y. Wang, Y.-W. Kiang, and C. C. Yang, “Emission enhancement behaviors in the coupling between surface plasmon polariton on a one-dimensional metallic grating and a light emitter,” Appl. Phys. Lett. 91(23), 233104 (2007).
[Crossref]
M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[Crossref]
M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]
M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[Crossref]
M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]
K. Akita, T. Kyono, Y. Yoshizumi, H. Kitabayashi, and K. Katayama, “Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” J. Appl. Phys. 101(3), 033104 (2007).
[Crossref]
J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, “On the importance of radiative and Auger losses in GaN-based quantum wells,” Appl. Phys. Lett. 92(26), 261103 (2008).
[Crossref]
N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, “Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(24), 243506 (2007).
[Crossref]
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[Crossref]
C. F. Lai, J. Y. Chi, H. H. Yen, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, C. Y. Huang, and W. Y. Yeh, “Polarized light emission from photonic crystal light-emitting diodes,” Appl. Phys. Lett. 92(24), 243118 (2008).
[Crossref]
C. F. Lai, J. Y. Chi, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, and W. Y. Yeh, “Anisotropy of light extraction from GaN two-dimensional photonic crystals,” Opt. Express 16(10), 7285–7294 (2008), http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-16-10-7285 .
[Crossref]
[PubMed]
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[Crossref]
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