Abstract

The conical air-void structure of an InGaN light-emitting diode (LEDs) was formed at the GaN/sapphire interface to increase the light extraction efficiency. The fabrication process of the conical air-void structure consisted of a dry process and a crystallographic wet etching process on an undoped GaN layer, followed by a re-growth process for the InGaN LED structure. A higher light output power (1.54 times) and a small divergent angle (120°) were observed, at a 20mA operation current, on the treated LED structure when compared to a standard LED without the conical air-void structure. In this electroluminescence spectrum, the emission intensity and the peak wavelength varied periodically by corresponding to the conical air-void patterns that were measured through a 100nm-optical-aperture fiber probe. The conical air-void structure reduced the compressed strain at the GaN/sapphire interface by inducing the wavelength blueshift phenomenon and the higher internal quantum efficiency of the photoluminescence spectra for the treated LED structure.

© 2010 OSA

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  1. C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
    [CrossRef]
  2. A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
    [CrossRef]
  3. H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
    [CrossRef] [PubMed]
  4. H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett. 90(26), 261117 (2007).
    [CrossRef]
  5. H. G. Kim, H. K. Kim, H. Y. Kim, H. Jeong, S. Chandramohan, P. Uthirakumar, M. S. Jeong, J. S. Lee, E. K. Suh, and C. H. Hong, “Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes,” Opt. Lett. 35(18), 3012–3014 (2010).
    [CrossRef] [PubMed]
  6. Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
    [CrossRef] [PubMed]
  7. M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
    [CrossRef]
  8. C.-Y. Cho, J.-B. Lee, S.-J. Lee, S.-H. Han, T.-Y. Park, J. Won Kim, Y. C. Kim, and S.-J. Park, “Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2),” Opt. Express 18(2), 1462–1468 (2010).
    [CrossRef] [PubMed]
  9. K.-T. Chen, W.-C. Huang, T.-H. Hsieh, C.-H. Hsieh, and C.-F. Lin, “InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process,” Opt. Express 18(22), 23406–23412 (2010).
    [CrossRef]
  10. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
    [CrossRef]
  11. D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
    [CrossRef]
  12. C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
    [CrossRef]
  13. C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
    [CrossRef]
  14. J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
    [CrossRef]
  15. D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
    [CrossRef]
  16. J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
    [CrossRef]
  17. C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
    [CrossRef]
  18. D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing, “Crystallographic Wet Chemical Etching of p-Type GaN,” J. Electrochem. Soc. 147(2), 763–764 (2000).
    [CrossRef]
  19. D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
    [CrossRef]
  20. C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High Efficiency InGaN Light Emitting Diodes Via Sidewall Selective Etching and Oxidation,” J. Electrochem. Soc. 153(1), G39–G43 (2006).
    [CrossRef]

2010 (4)

2009 (6)

Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express 17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[CrossRef]

D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
[CrossRef]

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

2008 (1)

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

2007 (2)

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett. 90(26), 261117 (2007).
[CrossRef]

2006 (4)

H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High Efficiency InGaN Light Emitting Diodes Via Sidewall Selective Etching and Oxidation,” J. Electrochem. Soc. 153(1), G39–G43 (2006).
[CrossRef]

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[CrossRef]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

2004 (1)

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

2000 (1)

D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing, “Crystallographic Wet Chemical Etching of p-Type GaN,” J. Electrochem. Soc. 147(2), 763–764 (2000).
[CrossRef]

1998 (1)

D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[CrossRef]

Arif, R. A.

Baek, J. H.

J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[CrossRef]

Benisty, H.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

Boutros, K. S.

D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing, “Crystallographic Wet Chemical Etching of p-Type GaN,” J. Electrochem. Soc. 147(2), 763–764 (2000).
[CrossRef]

Chandramohan, S.

Chang, C. Y.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Chang, S.-J.

D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
[CrossRef]

Chapman, J. N.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Chen, J. A.

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

Chen, K. T.

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

Chen, K.-T.

Chen, P. S.

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[CrossRef]

Cheng, Y. J.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Chi, G. C.

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

Cho, C.-Y.

Cho, H. K.

Cho, M. W.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Choe, Y. H.

Choi, J.

Choi, J. H.

Correira, M. R.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Cuong, T. V.

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett. 90(26), 261117 (2007).
[CrossRef]

Dai, J. J.

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High Efficiency InGaN Light Emitting Diodes Via Sidewall Selective Etching and Oxidation,” J. Electrochem. Soc. 153(1), G39–G43 (2006).
[CrossRef]

David, A.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

DenBaars, S. P.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Divay, L.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Durand, O.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Ee, Y.-K.

Fu, Y. K.

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

Fujii, K.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Fujii, T.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Gao, Y.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Garry, G.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Gautier, S.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Gilchrist, J. F.

Goepfert, I. D.

D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing, “Crystallographic Wet Chemical Etching of p-Type GaN,” J. Electrochem. Soc. 147(2), 763–764 (2000).
[CrossRef]

Goto, H.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Ha, J.-S.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Han, S.-H.

Hon, S. J.

D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
[CrossRef]

Hong, C. H.

Hong, C.-H.

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett. 90(26), 261117 (2007).
[CrossRef]

Horng, R. H.

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

Hosseini Teherani, F.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Hsieh, C.-H.

Hsieh, T.-H.

Hsu, S. C.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Hu, E. L.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Huang, S. C.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Huang, W. C.

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

Huang, W.-C.

Huang, Y. C.

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

Hung, C. W.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Hung, S. C.

D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
[CrossRef]

Jang, J.

Jeon, S. R.

J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[CrossRef]

Jeong, H.

Jeong, M. S.

Jiang, R. H.

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

Kato, T.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Kim, H. G.

Kim, H. K.

Kim, H. Y.

Kim, J.

Kim, S. H.

Kim, S. K.

Kim, Y. C.

Ko, T. K.

D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
[CrossRef]

Kumnorkaew, P.

Kuo, C. H.

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

Kuo, C. W.

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

Kuo, D. S.

D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
[CrossRef]

Kuo, H. C.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Lee, B.

Lee, C. S.

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[CrossRef]

Lee, C. T.

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[CrossRef]

Lee, H.-J.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Lee, J. S.

Lee, J.-B.

Lee, K.

Lee, K. D.

Lee, S. H.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Lee, S. W.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Lee, S.-J.

Lee, Y. C.

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

Lee, Y. H.

Lin, C. F.

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High Efficiency InGaN Light Emitting Diodes Via Sidewall Selective Etching and Oxidation,” J. Electrochem. Soc. 153(1), G39–G43 (2006).
[CrossRef]

Lin, C. M.

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

Lin, C.-F.

Lin, M. S.

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

Lo, M. H.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Lusson, A.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

McGroddy, K.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

McGrouther, D.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Monteiro, T.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Na, M. G.

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett. 90(26), 261117 (2007).
[CrossRef]

Nakamura, S.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Neves, A.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Ougazzaden, A.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Park, J.

J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[CrossRef]

Park, S.-J.

Park, T.-Y.

Peres, M.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Razeghi, M.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Redwing, J. M.

D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing, “Crystallographic Wet Chemical Etching of p-Type GaN,” J. Electrochem. Soc. 147(2), 763–764 (2000).
[CrossRef]

D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[CrossRef]

Rogers, D. J.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Ryu, J. H.

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett. 90(26), 261117 (2007).
[CrossRef]

Ryu, S. W.

J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[CrossRef]

Schubert, E. F.

D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing, “Crystallographic Wet Chemical Etching of p-Type GaN,” J. Electrochem. Soc. 147(2), 763–764 (2000).
[CrossRef]

D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[CrossRef]

Sharma, R.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Shen, C. F.

D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
[CrossRef]

Song, K. M.

J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[CrossRef]

Stocker, D. A.

D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing, “Crystallographic Wet Chemical Etching of p-Type GaN,” J. Electrochem. Soc. 147(2), 763–764 (2000).
[CrossRef]

D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[CrossRef]

Suh, E. K.

Tansu, N.

Tong, H.

Tsai, C. H.

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

Tu, P. M.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Tun, C. J.

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

Uthirakumar, P.

Wang, C. H.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Wang, S. C.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Wang, W. K.

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

Weisbuch, C.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

Won Kim, J.

Wu, M. L.

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

Wyczisk, F.

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

Yang, C. C.

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

Yang, U. Z.

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[CrossRef]

Yang, Z. J.

C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High Efficiency InGaN Light Emitting Diodes Via Sidewall Selective Etching and Oxidation,” J. Electrochem. Soc. 153(1), G39–G43 (2006).
[CrossRef]

Yao, T.

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

Zan, H. W.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Zheng, J. H.

C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High Efficiency InGaN Light Emitting Diodes Via Sidewall Selective Etching and Oxidation,” J. Electrochem. Soc. 153(1), G39–G43 (2006).
[CrossRef]

Appl. Phys. Express (1)

C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, “An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process,” Appl. Phys. Express 3(3), 031001 (2010).
[CrossRef]

Appl. Phys. Lett. (7)

D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
[CrossRef]

J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[CrossRef]

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

D. A. Stocker, E. F. Schubert, and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73(18), 2654–2656 (1998).
[CrossRef]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[CrossRef]

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett. 90(26), 261117 (2007).
[CrossRef]

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett. 95(4), 041109 (2009).
[CrossRef]

Electrochem. Solid-State Lett. (1)

C. F. Lin, C. M. Lin, C. C. Yang, W. K. Wang, Y. C. Huang, J. A. Chen, and R. H. Horng, “InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process,” Electrochem. Solid-State Lett. 12(7), H233–H237 (2009).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, C. H. Kuo, and C. J. Tun, “Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1264–1268 (2009).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[CrossRef]

J.-S. Ha, S. W. Lee, H.-J. Lee, H.-J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, “The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process,” IEEE Photon. Technol. Lett. 20(3), 175–177 (2008).
[CrossRef]

D. S. Kuo, S.-J. Chang, T. K. Ko, C. F. Shen, S. J. Hon, and S. C. Hung, “Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls,” IEEE Photon. Technol. Lett. 21(8), 510–512 (2009).
[CrossRef]

J. Electrochem. Soc. (2)

D. A. Stocker, I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing, “Crystallographic Wet Chemical Etching of p-Type GaN,” J. Electrochem. Soc. 147(2), 763–764 (2000).
[CrossRef]

C. F. Lin, Z. J. Yang, J. H. Zheng, and J. J. Dai, “High Efficiency InGaN Light Emitting Diodes Via Sidewall Selective Etching and Oxidation,” J. Electrochem. Soc. 153(1), G39–G43 (2006).
[CrossRef]

Opt. Express (4)

Opt. Lett. (1)

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