Abstract

Single-crystalline ZnTe nanowires were prepared by a simple vapor transport and deposition method. Photodetectors of individual ZnTe nanowires were fabricated to study photoconductivity of the nanowires. It was observed the nanowire photodetectors show the highest visible-light photoconductive gains among all reported photodetectors based on 1D nanostructure semiconductors, including CdS, CdSe, ZnSe, etc. The high photosensitivity and relatively fast response speed are attributable to the high crystal quality of the ZnTe nanowires. These results reveal that such single-crystalline ZnTe nanowires are excellent candidates for optoelectronic applications.

© 2011 OSA

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  24. M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, “Photochemical sensing of NO2 with SnO2 nanoribbon nanosensors at room temperature,” Angew. Chem. Int. Ed. 41(13), 2405–2408 (2002).
    [CrossRef]
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    [CrossRef] [PubMed]
  26. J. Salfi, U. Philipose, C. F. de Souza, S. Aouba, and H. E. Ruda, “Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection,” Appl. Phys. Lett. 89(26), 261112 (2006).
    [CrossRef]
  27. X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
    [CrossRef]
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    [CrossRef] [PubMed]
  29. J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
    [CrossRef]
  30. K. Sato and S. Adachi, “Optical-Properties of ZnTe,” J. Appl. Phys. 73(2), 926–931 (1993).
    [CrossRef]
  31. Z. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, “Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry,” Proc. Natl. Acad. Sci. U.S.A. 105(32), 11066–11070 (2008).
    [CrossRef] [PubMed]
  32. C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
    [CrossRef] [PubMed]

2010 (1)

Z. Li, J. Salfi, C. D. Souza, P. Sun, S. V. Nair, and H. E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 97(6), 063510 (2010).
[CrossRef]

2009 (4)

X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Q. Cao and J. A. Rogers, “Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects,” Adv. Mater. (Deerfield Beach Fla.) 21(1), 29–53 (2009).
[CrossRef]

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Q. F. Meng, C. B. Jiang, and S. X. Mao, “Ohmic contacts and photoconductivity of individual ZnTe nanowires,” Appl. Phys. Lett. 94(4), 043111 (2009).
[CrossRef]

2008 (3)

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Z. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, “Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry,” Proc. Natl. Acad. Sci. U.S.A. 105(32), 11066–11070 (2008).
[CrossRef] [PubMed]

2007 (5)

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. M. Lieber and Z. L. Wang, “Functional nanowires,” MRS Bull. 32(02), 99–108 (2007).
[CrossRef]

X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
[CrossRef]

Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors,” Adv. Funct. Mater. 17(11), 1795–1800 (2007).
[CrossRef]

2006 (4)

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
[CrossRef] [PubMed]

L. Li, Y. W. Yang, G. H. Li, and L. D. Zhang, “Conversion of a Bi nanowire array to an array of Bi-Bi2O3 core-shell nanowires and Bi2O3 nanotubes,” Small 2(4), 548–553 (2006).
[CrossRef] [PubMed]

J. Salfi, U. Philipose, C. F. de Souza, S. Aouba, and H. E. Ruda, “Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection,” Appl. Phys. Lett. 89(26), 261112 (2006).
[CrossRef]

2005 (1)

L. Li, Y. W. Yang, X. H. Huang, G. H. Li, and L. D. Zhang, “Fabrication and characterization of single-crystalline ZnTe nanowire arrays,” J. Phys. Chem. B 109(25), 12394–12398 (2005).
[CrossRef]

2004 (1)

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
[CrossRef]

2003 (2)

Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
[CrossRef]

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, and P. H. Avouris, “Photoconductivity of single carbon nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

2002 (4)

H. Kind, H. Q. Yan, B. Messer, M. Law, and P. D. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Handa, and T. Yao, “ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy,” Phys. Stat. Solidi B 229(2), 995–999 (2002).
[CrossRef]

H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, “Photochemical sensing of NO2 with SnO2 nanoribbon nanosensors at room temperature,” Angew. Chem. Int. Ed. 41(13), 2405–2408 (2002).
[CrossRef]

2001 (2)

J. H. Chang, T. Takai, B. H. Koo, J. S. Song, T. Handa, and T. Yao, “Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79(6), 785–787 (2001).
[CrossRef]

Y. Cui, Q. Wei, H. Park, and C. M. Lieber, “Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species,” Science 293(5533), 1289–1292 (2001).
[CrossRef] [PubMed]

1999 (1)

D. P. Amalnerkar, “Photoconducting and allied properties of CdS thick films,” Mater. Chem. Phys. 60(1), 1–21 (1999).
[CrossRef]

1993 (1)

K. Sato and S. Adachi, “Optical-Properties of ZnTe,” J. Appl. Phys. 73(2), 926–931 (1993).
[CrossRef]

1991 (1)

H. E. Ruda, “Compensation and Transport Characteristics of N-ZnTe,” J. Phys. D Appl. Phys. 24(7), 1158–1162 (1991).
[CrossRef]

1985 (1)

J. J. Yeh and I. Lindau, “Atomic subshell photoionization cross sections and asymmetry parameters: 1 ≤ Z ≤ 103,” At. Data Nucl. Data Tables 32(1), 1–155 (1985).
[CrossRef]

1957 (1)

S. Larach, R. E. Shrader, and C. F. Stocker, “Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-Tellurides,” Phys. Rev. 108(3), 587–589 (1957).
[CrossRef]

Adachi, S.

K. Sato and S. Adachi, “Optical-Properties of ZnTe,” J. Appl. Phys. 73(2), 926–931 (1993).
[CrossRef]

Amalnerkar, D. P.

D. P. Amalnerkar, “Photoconducting and allied properties of CdS thick films,” Mater. Chem. Phys. 60(1), 1–21 (1999).
[CrossRef]

Andreu, T.

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Aouba, S.

J. Salfi, U. Philipose, C. F. de Souza, S. Aouba, and H. E. Ruda, “Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection,” Appl. Phys. Lett. 89(26), 261112 (2006).
[CrossRef]

Aplin, D. P. R.

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Avouris, P. H.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, and P. H. Avouris, “Photoconductivity of single carbon nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Bando, Y.

X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
[CrossRef]

Bao, X. Y.

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Barth, S.

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Cao, Q.

Q. Cao and J. A. Rogers, “Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects,” Adv. Mater. (Deerfield Beach Fla.) 21(1), 29–53 (2009).
[CrossRef]

Cao, Y. L.

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Chang, C. S.

Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
[CrossRef]

Chang, J. H.

J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Handa, and T. Yao, “ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy,” Phys. Stat. Solidi B 229(2), 995–999 (2002).
[CrossRef]

J. H. Chang, T. Takai, B. H. Koo, J. S. Song, T. Handa, and T. Yao, “Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79(6), 785–787 (2001).
[CrossRef]

Chang, P. C.

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
[CrossRef]

Chang, S. J.

Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
[CrossRef]

Chen, C. C.

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Chen, K. H.

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Chen, L. C.

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Chen, R. S.

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Chiou, Y. Z.

Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
[CrossRef]

Cirera, A.

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Cornet, A.

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Costa, P. M. F. J.

X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
[CrossRef]

Cui, Y.

Y. Cui, Q. Wei, H. Park, and C. M. Lieber, “Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species,” Science 293(5533), 1289–1292 (2001).
[CrossRef] [PubMed]

Dai, L.

H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
[CrossRef] [PubMed]

Dayeh, S. A.

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C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
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J. Salfi, U. Philipose, C. F. de Souza, S. Aouba, and H. E. Ruda, “Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection,” Appl. Phys. Lett. 89(26), 261112 (2006).
[CrossRef]

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X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors,” Adv. Funct. Mater. 17(11), 1795–1800 (2007).
[CrossRef]

Fan, Z.

Z. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, “Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry,” Proc. Natl. Acad. Sci. U.S.A. 105(32), 11066–11070 (2008).
[CrossRef] [PubMed]

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
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X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
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J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
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M. Freitag, Y. Martin, J. A. Misewich, R. Martel, and P. H. Avouris, “Photoconductivity of single carbon nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
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Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
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J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Handa, and T. Yao, “ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy,” Phys. Stat. Solidi B 229(2), 995–999 (2002).
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J. H. Chang, T. Takai, B. H. Koo, J. S. Song, T. Handa, and T. Yao, “Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79(6), 785–787 (2001).
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Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
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J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Ho, J. C.

Z. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, “Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry,” Proc. Natl. Acad. Sci. U.S.A. 105(32), 11066–11070 (2008).
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L. Li, Y. W. Yang, X. H. Huang, G. H. Li, and L. D. Zhang, “Fabrication and characterization of single-crystalline ZnTe nanowire arrays,” J. Phys. Chem. B 109(25), 12394–12398 (2005).
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R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
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H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
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Z. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, “Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry,” Proc. Natl. Acad. Sci. U.S.A. 105(32), 11066–11070 (2008).
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Z. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, “Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry,” Proc. Natl. Acad. Sci. U.S.A. 105(32), 11066–11070 (2008).
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Q. F. Meng, C. B. Jiang, and S. X. Mao, “Ohmic contacts and photoconductivity of individual ZnTe nanowires,” Appl. Phys. Lett. 94(4), 043111 (2009).
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Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors,” Adv. Funct. Mater. 17(11), 1795–1800 (2007).
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J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
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Jie, J. S.

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
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X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors,” Adv. Funct. Mater. 17(11), 1795–1800 (2007).
[CrossRef]

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

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J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
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M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, “Photochemical sensing of NO2 with SnO2 nanoribbon nanosensors at room temperature,” Angew. Chem. Int. Ed. 41(13), 2405–2408 (2002).
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Kind, H.

M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, “Photochemical sensing of NO2 with SnO2 nanoribbon nanosensors at room temperature,” Angew. Chem. Int. Ed. 41(13), 2405–2408 (2002).
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H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
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H. Kind, H. Q. Yan, B. Messer, M. Law, and P. D. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
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J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Handa, and T. Yao, “ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy,” Phys. Stat. Solidi B 229(2), 995–999 (2002).
[CrossRef]

J. H. Chang, T. Takai, B. H. Koo, J. S. Song, T. Handa, and T. Yao, “Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79(6), 785–787 (2001).
[CrossRef]

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R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
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H. Kind, H. Q. Yan, B. Messer, M. Law, and P. D. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, “Photochemical sensing of NO2 with SnO2 nanoribbon nanosensors at room temperature,” Angew. Chem. Int. Ed. 41(13), 2405–2408 (2002).
[CrossRef]

Lee, C. S.

X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Lee, H. P.

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
[CrossRef]

Lee, S. T.

X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors,” Adv. Funct. Mater. 17(11), 1795–1800 (2007).
[CrossRef]

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
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L. Li, Y. W. Yang, G. H. Li, and L. D. Zhang, “Conversion of a Bi nanowire array to an array of Bi-Bi2O3 core-shell nanowires and Bi2O3 nanotubes,” Small 2(4), 548–553 (2006).
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L. Li, Y. W. Yang, X. H. Huang, G. H. Li, and L. D. Zhang, “Fabrication and characterization of single-crystalline ZnTe nanowire arrays,” J. Phys. Chem. B 109(25), 12394–12398 (2005).
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Li, L.

L. Li, Y. W. Yang, G. H. Li, and L. D. Zhang, “Conversion of a Bi nanowire array to an array of Bi-Bi2O3 core-shell nanowires and Bi2O3 nanotubes,” Small 2(4), 548–553 (2006).
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L. Li, Y. W. Yang, X. H. Huang, G. H. Li, and L. D. Zhang, “Fabrication and characterization of single-crystalline ZnTe nanowire arrays,” J. Phys. Chem. B 109(25), 12394–12398 (2005).
[CrossRef]

Li, Y. Q.

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
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Li, Z.

Z. Li, J. Salfi, C. D. Souza, P. Sun, S. V. Nair, and H. E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 97(6), 063510 (2010).
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Y. Cui, Q. Wei, H. Park, and C. M. Lieber, “Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species,” Science 293(5533), 1289–1292 (2001).
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Lin, C. H.

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
[CrossRef]

Lin, Y. C.

Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
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Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
[CrossRef]

Liu, Y.

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Liu, Z. T.

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Lo, Y. H.

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Lu, J. G.

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
[CrossRef]

Luo, L. B.

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Mao, S. X.

Q. F. Meng, C. B. Jiang, and S. X. Mao, “Ohmic contacts and photoconductivity of individual ZnTe nanowires,” Appl. Phys. Lett. 94(4), 043111 (2009).
[CrossRef]

Martel, R.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, and P. H. Avouris, “Photoconductivity of single carbon nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Martin, Y.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, and P. H. Avouris, “Photoconductivity of single carbon nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Mathur, S.

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Meng, Q. F.

Q. F. Meng, C. B. Jiang, and S. X. Mao, “Ohmic contacts and photoconductivity of individual ZnTe nanowires,” Appl. Phys. Lett. 94(4), 043111 (2009).
[CrossRef]

Meng, X. M.

X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors,” Adv. Funct. Mater. 17(11), 1795–1800 (2007).
[CrossRef]

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

Messer, B.

H. Kind, H. Q. Yan, B. Messer, M. Law, and P. D. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, “Photochemical sensing of NO2 with SnO2 nanoribbon nanosensors at room temperature,” Angew. Chem. Int. Ed. 41(13), 2405–2408 (2002).
[CrossRef]

Misewich, J. A.

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, and P. H. Avouris, “Photoconductivity of single carbon nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

Morante, J. R.

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Nair, S. V.

Z. Li, J. Salfi, C. D. Souza, P. Sun, S. V. Nair, and H. E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 97(6), 063510 (2010).
[CrossRef]

Park, H.

Y. Cui, Q. Wei, H. Park, and C. M. Lieber, “Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species,” Science 293(5533), 1289–1292 (2001).
[CrossRef] [PubMed]

Park, J.

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Penner, R. M.

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
[CrossRef]

Philipose, U.

J. Salfi, U. Philipose, C. F. de Souza, S. Aouba, and H. E. Ruda, “Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection,” Appl. Phys. Lett. 89(26), 261112 (2006).
[CrossRef]

Prades, J. D.

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Qin, G. G.

H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
[CrossRef] [PubMed]

Ran, G. Z.

H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
[CrossRef] [PubMed]

Razavi, H.

Z. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, “Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry,” Proc. Natl. Acad. Sci. U.S.A. 105(32), 11066–11070 (2008).
[CrossRef] [PubMed]

Rogers, J. A.

Q. Cao and J. A. Rogers, “Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects,” Adv. Mater. (Deerfield Beach Fla.) 21(1), 29–53 (2009).
[CrossRef]

Romano-Rodriguez, A.

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

Ruda, H. E.

Z. Li, J. Salfi, C. D. Souza, P. Sun, S. V. Nair, and H. E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 97(6), 063510 (2010).
[CrossRef]

J. Salfi, U. Philipose, C. F. de Souza, S. Aouba, and H. E. Ruda, “Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection,” Appl. Phys. Lett. 89(26), 261112 (2006).
[CrossRef]

H. E. Ruda, “Compensation and Transport Characteristics of N-ZnTe,” J. Phys. D Appl. Phys. 24(7), 1158–1162 (1991).
[CrossRef]

Salfi, J.

Z. Li, J. Salfi, C. D. Souza, P. Sun, S. V. Nair, and H. E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 97(6), 063510 (2010).
[CrossRef]

J. Salfi, U. Philipose, C. F. de Souza, S. Aouba, and H. E. Ruda, “Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection,” Appl. Phys. Lett. 89(26), 261112 (2006).
[CrossRef]

Sato, K.

K. Sato and S. Adachi, “Optical-Properties of ZnTe,” J. Appl. Phys. 73(2), 926–931 (1993).
[CrossRef]

Shen, G. Z.

X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
[CrossRef]

Shrader, R. E.

S. Larach, R. E. Shrader, and C. F. Stocker, “Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-Tellurides,” Phys. Rev. 108(3), 587–589 (1957).
[CrossRef]

Soci, C.

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Song, J. S.

J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Handa, and T. Yao, “ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy,” Phys. Stat. Solidi B 229(2), 995–999 (2002).
[CrossRef]

J. H. Chang, T. Takai, B. H. Koo, J. S. Song, T. Handa, and T. Yao, “Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79(6), 785–787 (2001).
[CrossRef]

Souza, C. D.

Z. Li, J. Salfi, C. D. Souza, P. Sun, S. V. Nair, and H. E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 97(6), 063510 (2010).
[CrossRef]

Stocker, C. F.

S. Larach, R. E. Shrader, and C. F. Stocker, “Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-Tellurides,” Phys. Rev. 108(3), 587–589 (1957).
[CrossRef]

Su, Y. K.

Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
[CrossRef]

Sun, P.

Z. Li, J. Salfi, C. D. Souza, P. Sun, S. V. Nair, and H. E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 97(6), 063510 (2010).
[CrossRef]

Takai, T.

J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Handa, and T. Yao, “ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy,” Phys. Stat. Solidi B 229(2), 995–999 (2002).
[CrossRef]

J. H. Chang, T. Takai, B. H. Koo, J. S. Song, T. Handa, and T. Yao, “Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79(6), 785–787 (2001).
[CrossRef]

Tang, C. C.

X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
[CrossRef]

Tang, Y. B.

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Tsai, J. T.

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Vellaisamy, R.

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Walter, E. C.

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
[CrossRef]

Wang, D.

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Wang, S. W.

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Wang, Z. L.

C. M. Lieber and Z. L. Wang, “Functional nanowires,” MRS Bull. 32(02), 99–108 (2007).
[CrossRef]

Wei, Q.

Y. Cui, Q. Wei, H. Park, and C. M. Lieber, “Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species,” Science 293(5533), 1289–1292 (2001).
[CrossRef] [PubMed]

Wu, C. T.

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

Xia, D. Y.

H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
[CrossRef] [PubMed]

Xiang, B.

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Yan, H.

H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

Yan, H. Q.

H. Kind, H. Q. Yan, B. Messer, M. Law, and P. D. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

Yang, P.

M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, “Photochemical sensing of NO2 with SnO2 nanoribbon nanosensors at room temperature,” Angew. Chem. Int. Ed. 41(13), 2405–2408 (2002).
[CrossRef]

H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

Yang, P. D.

H. Kind, H. Q. Yan, B. Messer, M. Law, and P. D. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

Yang, Y. W.

L. Li, Y. W. Yang, G. H. Li, and L. D. Zhang, “Conversion of a Bi nanowire array to an array of Bi-Bi2O3 core-shell nanowires and Bi2O3 nanotubes,” Small 2(4), 548–553 (2006).
[CrossRef] [PubMed]

L. Li, Y. W. Yang, X. H. Huang, G. H. Li, and L. D. Zhang, “Fabrication and characterization of single-crystalline ZnTe nanowire arrays,” J. Phys. Chem. B 109(25), 12394–12398 (2005).
[CrossRef]

Yao, T.

J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Handa, and T. Yao, “ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy,” Phys. Stat. Solidi B 229(2), 995–999 (2002).
[CrossRef]

J. H. Chang, T. Takai, B. H. Koo, J. S. Song, T. Handa, and T. Yao, “Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79(6), 785–787 (2001).
[CrossRef]

Ye, C. H.

X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
[CrossRef]

Yeh, J. J.

J. J. Yeh and I. Lindau, “Atomic subshell photoionization cross sections and asymmetry parameters: 1 ≤ Z ≤ 103,” At. Data Nucl. Data Tables 32(1), 1–155 (1985).
[CrossRef]

You, L. P.

H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
[CrossRef] [PubMed]

Zhang, A.

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Zhang, B. R.

H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
[CrossRef] [PubMed]

Zhang, L. D.

L. Li, Y. W. Yang, G. H. Li, and L. D. Zhang, “Conversion of a Bi nanowire array to an array of Bi-Bi2O3 core-shell nanowires and Bi2O3 nanotubes,” Small 2(4), 548–553 (2006).
[CrossRef] [PubMed]

L. Li, Y. W. Yang, X. H. Huang, G. H. Li, and L. D. Zhang, “Fabrication and characterization of single-crystalline ZnTe nanowire arrays,” J. Phys. Chem. B 109(25), 12394–12398 (2005).
[CrossRef]

Zhang, M. L.

X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Zhang, W. J.

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors,” Adv. Funct. Mater. 17(11), 1795–1800 (2007).
[CrossRef]

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

Zhang, X. H.

X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

Zhi, C. Y.

X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
[CrossRef]

Adv. Funct. Mater. (1)

Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S. T. Lee, “Photoresponse properties of CdSe single-nanoribbon photodetectors,” Adv. Funct. Mater. 17(11), 1795–1800 (2007).
[CrossRef]

Adv. Mater. (Deerfield Beach Fla.) (4)

X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang, and D. Golberg, “Ultrarine ZnS nanobelts as field emitters,” Adv. Mater. (Deerfield Beach Fla.) 19(18), 2593–2596 (2007).
[CrossRef]

H. Kind, H. Q. Yan, B. Messer, M. Law, and P. D. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

Q. Cao and J. A. Rogers, “Ultrathin Films of Single-Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects,” Adv. Mater. (Deerfield Beach Fla.) 21(1), 29–53 (2009).
[CrossRef]

H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, “Nanowire ultraviolet photodetectors and optical switches,” Adv. Mater. (Deerfield Beach Fla.) 14(2), 158–160 (2002).
[CrossRef]

Angew. Chem. Int. Ed. (1)

M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, “Photochemical sensing of NO2 with SnO2 nanoribbon nanosensors at room temperature,” Angew. Chem. Int. Ed. 41(13), 2405–2408 (2002).
[CrossRef]

Appl. Phys. Lett. (5)

J. Salfi, U. Philipose, C. F. de Souza, S. Aouba, and H. E. Ruda, “Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection,” Appl. Phys. Lett. 89(26), 261112 (2006).
[CrossRef]

Q. F. Meng, C. B. Jiang, and S. X. Mao, “Ohmic contacts and photoconductivity of individual ZnTe nanowires,” Appl. Phys. Lett. 94(4), 043111 (2009).
[CrossRef]

Z. Li, J. Salfi, C. D. Souza, P. Sun, S. V. Nair, and H. E. Ruda, “Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition,” Appl. Phys. Lett. 97(6), 063510 (2010).
[CrossRef]

Z. Fan, P. C. Chang, J. G. Lu, E. C. Walter, R. M. Penner, C. H. Lin, and H. P. Lee, “Photoluminescence and polarized photodetection of single ZnO nanowires,” Appl. Phys. Lett. 85(25), 6128–1, 6128–3 (2004).
[CrossRef]

J. H. Chang, T. Takai, B. H. Koo, J. S. Song, T. Handa, and T. Yao, “Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy,” Appl. Phys. Lett. 79(6), 785–787 (2001).
[CrossRef]

At. Data Nucl. Data Tables (1)

J. J. Yeh and I. Lindau, “Atomic subshell photoionization cross sections and asymmetry parameters: 1 ≤ Z ≤ 103,” At. Data Nucl. Data Tables 32(1), 1–155 (1985).
[CrossRef]

IEEE J. Quantum Electron. (1)

Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S. H. Liu, and C. S. Chang, IEEE J. Quantum Electron. 39, 681–685 (2003).
[CrossRef]

J. Appl. Phys. (1)

K. Sato and S. Adachi, “Optical-Properties of ZnTe,” J. Appl. Phys. 73(2), 926–931 (1993).
[CrossRef]

J. Nanosci. Nanotechnol. (1)

H. B. Huo, L. Dai, D. Y. Xia, G. Z. Ran, L. P. You, B. R. Zhang, and G. G. Qin, “Synthesis and optical properties of ZnTe single-crystalline nanowires,” J. Nanosci. Nanotechnol. 6(4), 1182–1184 (2006).
[CrossRef] [PubMed]

J. Phys. Chem. B (1)

L. Li, Y. W. Yang, X. H. Huang, G. H. Li, and L. D. Zhang, “Fabrication and characterization of single-crystalline ZnTe nanowire arrays,” J. Phys. Chem. B 109(25), 12394–12398 (2005).
[CrossRef]

J. Phys. Chem. C (2)

J. D. Prades, R. Jimenez-Diaz, F. Hernandez-Ramirez, L. Fernandez-Romero, T. Andreu, A. Cirera, A. Romano-Rodriguez, A. Cornet, J. R. Morante, S. Barth, and S. Mathur, “Toward a systematic understanding of photodetectors based on individual metal oxide nanowires,” J. Phys. Chem. C 112(37), 14639–14644 (2008).
[CrossRef]

X. Fan, X. M. Meng, X. H. Zhang, M. L. Zhang, J. S. Jie, W. J. Zhang, C. S. Lee, and S. T. Lee, “Formation and Photoelectric Properties of Periodically Twinned ZnSe/SiO2 Nanocables,” J. Phys. Chem. C 113(3), 834–838 (2009).
[CrossRef]

J. Phys. D Appl. Phys. (1)

H. E. Ruda, “Compensation and Transport Characteristics of N-ZnTe,” J. Phys. D Appl. Phys. 24(7), 1158–1162 (1991).
[CrossRef]

Mater. Chem. Phys. (1)

D. P. Amalnerkar, “Photoconducting and allied properties of CdS thick films,” Mater. Chem. Phys. 60(1), 1–21 (1999).
[CrossRef]

MRS Bull. (1)

C. M. Lieber and Z. L. Wang, “Functional nanowires,” MRS Bull. 32(02), 99–108 (2007).
[CrossRef]

Nano Lett. (4)

M. Freitag, Y. Martin, J. A. Misewich, R. Martel, and P. H. Avouris, “Photoconductivity of single carbon nanotubes,” Nano Lett. 3(8), 1067–1071 (2003).
[CrossRef]

J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, “Photoconductive characteristics of single-crystal CdS nanoribbons,” Nano Lett. 6(9), 1887–1892 (2006).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett. 7(4), 1003–1009 (2007).
[CrossRef] [PubMed]

Nanotechnology (1)

Y. L. Cao, Y. B. Tang, Y. Liu, Z. T. Liu, L. B. Luo, Z. B. He, J. S. Jie, R. Vellaisamy, W. J. Zhang, C. S. Lee, and S. T. Lee, “Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties,” Nanotechnology 20(45), 455702 (2009).
[CrossRef] [PubMed]

Phys. Rev. (1)

S. Larach, R. E. Shrader, and C. F. Stocker, “Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-Tellurides,” Phys. Rev. 108(3), 587–589 (1957).
[CrossRef]

Phys. Stat. Solidi B (1)

J. H. Chang, T. Takai, K. Godo, J. S. Song, B. H. Koo, T. Handa, and T. Yao, “ZnTe-based light-emitting-diodes grown on ZnTe substrates by molecular beam epitaxy,” Phys. Stat. Solidi B 229(2), 995–999 (2002).
[CrossRef]

Proc. Natl. Acad. Sci. U.S.A. (1)

Z. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, “Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry,” Proc. Natl. Acad. Sci. U.S.A. 105(32), 11066–11070 (2008).
[CrossRef] [PubMed]

Science (1)

Y. Cui, Q. Wei, H. Park, and C. M. Lieber, “Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species,” Science 293(5533), 1289–1292 (2001).
[CrossRef] [PubMed]

Small (2)

R. S. Chen, S. W. Wang, Z. H. Lan, J. T. Tsai, C. T. Wu, L. C. Chen, K. H. Chen, Y. S. Huang, and C. C. Chen, “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity,” Small 4(7), 925–929 (2008).
[CrossRef] [PubMed]

L. Li, Y. W. Yang, G. H. Li, and L. D. Zhang, “Conversion of a Bi nanowire array to an array of Bi-Bi2O3 core-shell nanowires and Bi2O3 nanotubes,” Small 2(4), 548–553 (2006).
[CrossRef] [PubMed]

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Figures (5)

Fig. 1
Fig. 1

(a) An XRD pattern of the ZnTe nanostructures; (b)-(d) low-magnification and high-magnification SEM images of the ZnTe nanostructures. The ZnTe nanostructures exhibit a wire-like morphology.

Fig. 2
Fig. 2

(a) TEM image of the ZnTe nanowire. The inset shows the corresponding SAED pattern. (b) HRTEM image of the ZnTe nanowire. (c) EDX spectrum, (d) Raman spectrum, and (e), (f) XPS spectrum of the ZnTe nanowires.

Fig. 3
Fig. 3

(a) A schematic illustration of an individual ZnTe nanowire configured as a photodetector. (b) Photoconductivity measurement of a ZnTe nanowire device on a SiO2/Si substrate. (c) A representative low-magnification and (d) high-magnification SEM image of a single-crystalline ZnTe nanowire device. (e) Comparative I-V characteristics of the ZnTe-nanowire photodector illuminated with a light of 400- and 500-nm wavelength and under dark conditions. (f) Spectral response (left) of the nanowire measured at a constant bias voltage of 10 V. The normalized room-temperature PL spectrum (right) of the ZnTe nanowires is also illustrated.

Fig. 4
Fig. 4

(a) I-V curves of a single ZnTe nanowire measured in dark and under light irradiation of varying intensity at 500 nm. (b) Photocurrent at different light intensity under an excitation wavelength of 500 nm and a bias voltage of 10 V. Both of the photocurrent and light intensity are in the log scale.

Fig. 5
Fig. 5

(a) The reproducible on/off switching of a ZnTe-nanowire photodector upon 500-nm light illumination measured for the light-on and light-off conditions at a bias voltage of 10 V. (b), (c) The enlarged portions of a 198-216 s range and a 236-254 s range corresponding to light-on to light-off and light-off to light-on transitions, respectively.

Tables (1)

Tables Icon

Table 1 Comparison of the most important II-VI nanostructure visible-light photodetector parameters between this work and the previous reports.

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