Abstract

Nano-sphere lithography technique was used to fabricate nano-patterned Si substrates with various depths by controlling the etching time. The depth-dependent broadband anti-reflection was observed and the reflectivity could be reduced to 5%. By depositing Si quantum dots/SiO2 multilayer on nano-patterned substrate, the reflection was further suppressed and luminescence intensity was significantly enhanced. The luminescence enhancement is dependent of the etching depth and the luminescence can be one order of magnitude stronger than that on flat substrate due to both the improved absorption of excitation light and the increase of light extraction ratio by nano-patterned structures.

© 2011 OSA

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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
  3. K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069 (1992).
    [CrossRef]
  4. D. Chen, Y. Liu, J. Xu, D. Wei, H. Sun, L. Xu, T. Wang, W. Li, and K. Chen, “Improved emission efficiency of electroluminescent device containing nc-Si/SiO(2) multilayers by using nano-patterned substrate,” Opt. Express 18(2), 917–922 (2010).
    [CrossRef] [PubMed]
  5. J. Zhou, G. R. Chen, Y. Liu, J. Xu, T. Wang, N. Wan, Z. Y. Ma, W. Li, C. Song, and K. J. Chen, “Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures,” Opt. Express 17(1), 156–162 (2009).
    [CrossRef] [PubMed]
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  7. F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, “Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell,” J. Appl. Phys. 106(1), 013501 (2009).
    [CrossRef]
  8. Y. Mochizuki, M. Fujii, S. Hayashi, T. Tsuruoka, and K. Akamatsu, “Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography,” J. Appl. Phys. 106(1), 013517 (2009).
    [CrossRef]
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    [CrossRef]
  10. B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
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    [CrossRef]
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    [CrossRef]
  14. W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
    [CrossRef]
  15. A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C 6(S2), S807 (2009).
    [CrossRef]
  16. P. Lalanne and G. M. Morris, “Antireflection behavior of silicon subwavelength periodic structures for visible light,” Nanotechnology 8(2), 53–56 (1997).
    [CrossRef]
  17. J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
    [CrossRef]
  18. W. Li, L. Xu, W. Zhao, P. Sun, X. Huang, and K. Chen, “Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography,” Appl. Surf. Sci. 253(22), 9035–9038 (2007).
    [CrossRef]
  19. W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
    [CrossRef] [PubMed]
  20. D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
    [CrossRef]
  21. S. Koynov, M. S. Brandt, and M. Stutzmann, “Black nonreflecting silicon surfaces for solar cells,” Appl. Phys. Lett. 88(20), 203107 (2006).
    [CrossRef]
  22. N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
    [CrossRef]

2010 (6)

M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, “Photonic Crystal and Plasmonic Silicon-Based Light Sources,” IEEE J. Sel. Top. Quantum Electron. 16(1), 132–140 (2010).
[CrossRef]

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
[CrossRef]

G. G. Qin, G. Z. Ran, K. Sun, and H. J. Xu, “Light emission from nanoscale Si/Si oxide materials,” J. Nanosci. Nanotechnol. 10(3), 1584–1595 (2010).
[CrossRef] [PubMed]

D. Chen, Y. Liu, J. Xu, D. Wei, H. Sun, L. Xu, T. Wang, W. Li, and K. Chen, “Improved emission efficiency of electroluminescent device containing nc-Si/SiO(2) multilayers by using nano-patterned substrate,” Opt. Express 18(2), 917–922 (2010).
[CrossRef] [PubMed]

2009 (6)

J. Zhou, G. R. Chen, Y. Liu, J. Xu, T. Wang, N. Wan, Z. Y. Ma, W. Li, C. Song, and K. J. Chen, “Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures,” Opt. Express 17(1), 156–162 (2009).
[CrossRef] [PubMed]

C. O’Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. Torres, “Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices,” Nat. Nanotechnol. 4(4), 239–244 (2009).
[CrossRef] [PubMed]

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C 6(S2), S807 (2009).
[CrossRef]

F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, “Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell,” J. Appl. Phys. 106(1), 013501 (2009).
[CrossRef]

Y. Mochizuki, M. Fujii, S. Hayashi, T. Tsuruoka, and K. Akamatsu, “Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography,” J. Appl. Phys. 106(1), 013517 (2009).
[CrossRef]

2008 (4)

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
[CrossRef] [PubMed]

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

2007 (1)

W. Li, L. Xu, W. Zhao, P. Sun, X. Huang, and K. Chen, “Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography,” Appl. Surf. Sci. 253(22), 9035–9038 (2007).
[CrossRef]

2006 (1)

S. Koynov, M. S. Brandt, and M. Stutzmann, “Black nonreflecting silicon surfaces for solar cells,” Appl. Phys. Lett. 88(20), 203107 (2006).
[CrossRef]

2005 (1)

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, “Silicon Nanocrystals: Size Matters,” Adv. Mater. (Deerfield Beach Fla.) 17(7), 795–803 (2005).
[CrossRef]

2000 (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

1997 (1)

P. Lalanne and G. M. Morris, “Antireflection behavior of silicon subwavelength periodic structures for visible light,” Nanotechnology 8(2), 53–56 (1997).
[CrossRef]

1992 (1)

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069 (1992).
[CrossRef]

Akamatsu, K.

Y. Mochizuki, M. Fujii, S. Hayashi, T. Tsuruoka, and K. Akamatsu, “Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography,” J. Appl. Phys. 106(1), 013517 (2009).
[CrossRef]

Altun, A. O.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Brandt, M. S.

S. Koynov, M. S. Brandt, and M. Stutzmann, “Black nonreflecting silicon surfaces for solar cells,” Appl. Phys. Lett. 88(20), 203107 (2006).
[CrossRef]

Burkhard, G. F.

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Byeon, C. C.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Chen, C.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Chen, D.

Chen, D. Y.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

Chen, G.

N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
[CrossRef]

Chen, G. R.

Chen, K.

N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
[CrossRef]

D. Chen, Y. Liu, J. Xu, D. Wei, H. Sun, L. Xu, T. Wang, W. Li, and K. Chen, “Improved emission efficiency of electroluminescent device containing nc-Si/SiO(2) multilayers by using nano-patterned substrate,” Opt. Express 18(2), 917–922 (2010).
[CrossRef] [PubMed]

W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
[CrossRef] [PubMed]

W. Li, L. Xu, W. Zhao, P. Sun, X. Huang, and K. Chen, “Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography,” Appl. Surf. Sci. 253(22), 9035–9038 (2007).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069 (1992).
[CrossRef]

Chen, K. J.

J. Zhou, G. R. Chen, Y. Liu, J. Xu, T. Wang, N. Wan, Z. Y. Ma, W. Li, C. Song, and K. J. Chen, “Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures,” Opt. Express 17(1), 156–162 (2009).
[CrossRef] [PubMed]

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

Chen, L.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Chen, T.

W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Cheng, S.-L.

M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, “Photonic Crystal and Plasmonic Silicon-Based Light Sources,” IEEE J. Sel. Top. Quantum Electron. 16(1), 132–140 (2010).
[CrossRef]

Cheng, Y.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Cho, C.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Choi, D.-G.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Choi, J.-H.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Connor, S. T.

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Cui, Y.

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Dal Negro, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Dufour, C.

F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, “Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell,” J. Appl. Phys. 106(1), 013501 (2009).
[CrossRef]

Fan, S.

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Feng, D.

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069 (1992).
[CrossRef]

Franzò, G.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Fujii, M.

Y. Mochizuki, M. Fujii, S. Hayashi, T. Tsuruoka, and K. Akamatsu, “Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography,” J. Appl. Phys. 106(1), 013517 (2009).
[CrossRef]

Gan, X.

N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
[CrossRef]

Gong, Y.

M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, “Photonic Crystal and Plasmonic Silicon-Based Light Sources,” IEEE J. Sel. Top. Quantum Electron. 16(1), 132–140 (2010).
[CrossRef]

Gosele, U.

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, “Silicon Nanocrystals: Size Matters,” Adv. Mater. (Deerfield Beach Fla.) 17(7), 795–803 (2005).
[CrossRef]

Gourbilleau, F.

F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, “Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell,” J. Appl. Phys. 106(1), 013501 (2009).
[CrossRef]

Guo, S.

N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
[CrossRef]

Han, P. G.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

Hayashi, S.

Y. Mochizuki, M. Fujii, S. Hayashi, T. Tsuruoka, and K. Akamatsu, “Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography,” J. Appl. Phys. 106(1), 013517 (2009).
[CrossRef]

Heitmann, J.

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, “Silicon Nanocrystals: Size Matters,” Adv. Mater. (Deerfield Beach Fla.) 17(7), 795–803 (2005).
[CrossRef]

Hsieh, M.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Hsu, C. M.

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Hu, E. L.

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C 6(S2), S807 (2009).
[CrossRef]

Huang, C.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Huang, J.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Huang, X.

W. Li, L. Xu, W. Zhao, P. Sun, X. Huang, and K. Chen, “Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography,” Appl. Surf. Sci. 253(22), 9035–9038 (2007).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069 (1992).
[CrossRef]

Jeon, S.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Jeong, J.-H.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Ke, M.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Kim, B.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Kim, J. S.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Kim, K.-D.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Koynov, S.

S. Koynov, M. S. Brandt, and M. Stutzmann, “Black nonreflecting silicon surfaces for solar cells,” Appl. Phys. Lett. 88(20), 203107 (2006).
[CrossRef]

Kuo, D.

W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Kwon, M.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Lalanne, P.

P. Lalanne and G. M. Morris, “Antireflection behavior of silicon subwavelength periodic structures for visible light,” Nanotechnology 8(2), 53–56 (1997).
[CrossRef]

Lavayen, V.

C. O’Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. Torres, “Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices,” Nat. Nanotechnol. 4(4), 239–244 (2009).
[CrossRef] [PubMed]

Lee, E.-S.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Lee, J.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Lee, S.-W.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Lee, W.

W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Li, R.

M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, “Photonic Crystal and Plasmonic Silicon-Based Light Sources,” IEEE J. Sel. Top. Quantum Electron. 16(1), 132–140 (2010).
[CrossRef]

Li, W.

D. Chen, Y. Liu, J. Xu, D. Wei, H. Sun, L. Xu, T. Wang, W. Li, and K. Chen, “Improved emission efficiency of electroluminescent device containing nc-Si/SiO(2) multilayers by using nano-patterned substrate,” Opt. Express 18(2), 917–922 (2010).
[CrossRef] [PubMed]

J. Zhou, G. R. Chen, Y. Liu, J. Xu, T. Wang, N. Wan, Z. Y. Ma, W. Li, C. Song, and K. J. Chen, “Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures,” Opt. Express 17(1), 156–162 (2009).
[CrossRef] [PubMed]

W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
[CrossRef] [PubMed]

W. Li, L. Xu, W. Zhao, P. Sun, X. Huang, and K. Chen, “Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography,” Appl. Surf. Sci. 253(22), 9035–9038 (2007).
[CrossRef]

Lin, T.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Liu, Y.

Lu, C.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Ma, Z. Y.

J. Zhou, G. R. Chen, Y. Liu, J. Xu, T. Wang, N. Wan, Z. Y. Ma, W. Li, C. Song, and K. J. Chen, “Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures,” Opt. Express 17(1), 156–162 (2009).
[CrossRef] [PubMed]

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

Maestre, D.

F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, “Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell,” J. Appl. Phys. 106(1), 013501 (2009).
[CrossRef]

Makarova, M.

M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, “Photonic Crystal and Plasmonic Silicon-Based Light Sources,” IEEE J. Sel. Top. Quantum Electron. 16(1), 132–140 (2010).
[CrossRef]

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

McGehee, M.

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

McGroddy, K. C.

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C 6(S2), S807 (2009).
[CrossRef]

Mochizuki, Y.

Y. Mochizuki, M. Fujii, S. Hayashi, T. Tsuruoka, and K. Akamatsu, “Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography,” J. Appl. Phys. 106(1), 013517 (2009).
[CrossRef]

Morris, G. M.

P. Lalanne and G. M. Morris, “Antireflection behavior of silicon subwavelength periodic structures for visible light,” Nanotechnology 8(2), 53–56 (1997).
[CrossRef]

Muller, F.

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, “Silicon Nanocrystals: Size Matters,” Adv. Mater. (Deerfield Beach Fla.) 17(7), 795–803 (2005).
[CrossRef]

Mun, J.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Negro, L. D.

M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, “Photonic Crystal and Plasmonic Silicon-Based Light Sources,” IEEE J. Sel. Top. Quantum Electron. 16(1), 132–140 (2010).
[CrossRef]

Newcomb, S. B.

C. O’Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. Torres, “Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices,” Nat. Nanotechnol. 4(4), 239–244 (2009).
[CrossRef] [PubMed]

Nishi, Y.

M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, “Photonic Crystal and Plasmonic Silicon-Based Light Sources,” IEEE J. Sel. Top. Quantum Electron. 16(1), 132–140 (2010).
[CrossRef]

O’Dwyer, C.

C. O’Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. Torres, “Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices,” Nat. Nanotechnol. 4(4), 239–244 (2009).
[CrossRef] [PubMed]

Palais, O.

F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, “Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell,” J. Appl. Phys. 106(1), 013501 (2009).
[CrossRef]

Park, H.-D.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Park, S.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Park, T.

B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, “Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons,” Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100–3104 (2008).
[CrossRef]

Pavesi, L.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Priolo, F.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Qin, G. G.

G. G. Qin, G. Z. Ran, K. Sun, and H. J. Xu, “Light emission from nanoscale Si/Si oxide materials,” J. Nanosci. Nanotechnol. 10(3), 1584–1595 (2010).
[CrossRef] [PubMed]

Ran, G. Z.

G. G. Qin, G. Z. Ran, K. Sun, and H. J. Xu, “Light emission from nanoscale Si/Si oxide materials,” J. Nanosci. Nanotechnol. 10(3), 1584–1595 (2010).
[CrossRef] [PubMed]

Shi, W. H.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

Shim, J.

A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, “Corrugated organic light emitting diodes for enhanced light extraction,” Org. Electron. 11(5), 711–716 (2010).
[CrossRef]

Song, C.

Song, F.

W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
[CrossRef] [PubMed]

Stutzmann, M.

S. Koynov, M. S. Brandt, and M. Stutzmann, “Black nonreflecting silicon surfaces for solar cells,” Appl. Phys. Lett. 88(20), 203107 (2006).
[CrossRef]

Sun, H.

Sun, K.

G. G. Qin, G. Z. Ran, K. Sun, and H. J. Xu, “Light emission from nanoscale Si/Si oxide materials,” J. Nanosci. Nanotechnol. 10(3), 1584–1595 (2010).
[CrossRef] [PubMed]

Sun, P.

W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
[CrossRef] [PubMed]

W. Li, L. Xu, W. Zhao, P. Sun, X. Huang, and K. Chen, “Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography,” Appl. Surf. Sci. 253(22), 9035–9038 (2007).
[CrossRef]

Szachowicz, M.

C. O’Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. Torres, “Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices,” Nat. Nanotechnol. 4(4), 239–244 (2009).
[CrossRef] [PubMed]

Tamboli, A. C.

A. C. Tamboli, K. C. McGroddy, and E. L. Hu, “Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes,” Phys. Status Solidi C 6(S2), S807 (2009).
[CrossRef]

Ternon, C.

F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, “Silicon-rich SiO2 /SiO2 multilayers: A promising material for the third generation of solar cell,” J. Appl. Phys. 106(1), 013501 (2009).
[CrossRef]

Torres, C. M.

C. O’Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. Torres, “Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices,” Nat. Nanotechnol. 4(4), 239–244 (2009).
[CrossRef] [PubMed]

Tsuruoka, T.

Y. Mochizuki, M. Fujii, S. Hayashi, T. Tsuruoka, and K. Akamatsu, “Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography,” J. Appl. Phys. 106(1), 013517 (2009).
[CrossRef]

Uang, K.

W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Visimberga, G.

C. O’Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. Torres, “Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices,” Nat. Nanotechnol. 4(4), 239–244 (2009).
[CrossRef] [PubMed]

Vuckovic, J.

M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, “Photonic Crystal and Plasmonic Silicon-Based Light Sources,” IEEE J. Sel. Top. Quantum Electron. 16(1), 132–140 (2010).
[CrossRef]

Wan, J.

W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
[CrossRef] [PubMed]

Wan, N.

N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
[CrossRef]

J. Zhou, G. R. Chen, Y. Liu, J. Xu, T. Wang, N. Wan, Z. Y. Ma, W. Li, C. Song, and K. J. Chen, “Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures,” Opt. Express 17(1), 156–162 (2009).
[CrossRef] [PubMed]

Wang, C.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Wang, P.

W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Wang, Q.

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Wang, Q. M.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

Wang, S.

W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, “Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Wang, T.

Wang, X.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

Wei, D.

Wei, D. Y.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

Xu, H. J.

G. G. Qin, G. Z. Ran, K. Sun, and H. J. Xu, “Light emission from nanoscale Si/Si oxide materials,” J. Nanosci. Nanotechnol. 10(3), 1584–1595 (2010).
[CrossRef] [PubMed]

Xu, J.

D. Chen, Y. Liu, J. Xu, D. Wei, H. Sun, L. Xu, T. Wang, W. Li, and K. Chen, “Improved emission efficiency of electroluminescent device containing nc-Si/SiO(2) multilayers by using nano-patterned substrate,” Opt. Express 18(2), 917–922 (2010).
[CrossRef] [PubMed]

N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
[CrossRef]

J. Zhou, G. R. Chen, Y. Liu, J. Xu, T. Wang, N. Wan, Z. Y. Ma, W. Li, C. Song, and K. J. Chen, “Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures,” Opt. Express 17(1), 156–162 (2009).
[CrossRef] [PubMed]

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, “Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO2 multilayers,” Semicond. Sci. Technol. 23(1), 015013 (2008).
[CrossRef]

W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
[CrossRef] [PubMed]

K. Chen, X. Huang, J. Xu, and D. Feng, “Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures,” Appl. Phys. Lett. 61(17), 2069 (1992).
[CrossRef]

Xu, L.

D. Chen, Y. Liu, J. Xu, D. Wei, H. Sun, L. Xu, T. Wang, W. Li, and K. Chen, “Improved emission efficiency of electroluminescent device containing nc-Si/SiO(2) multilayers by using nano-patterned substrate,” Opt. Express 18(2), 917–922 (2010).
[CrossRef] [PubMed]

N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, “Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature,” Acta Mater. 58(8), 3068–3072 (2010).
[CrossRef]

W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, “Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography,” Nanotechnology 19(13), 135308 (2008).
[CrossRef] [PubMed]

W. Li, L. Xu, W. Zhao, P. Sun, X. Huang, and K. Chen, “Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography,” Appl. Surf. Sci. 253(22), 9035–9038 (2007).
[CrossRef]

Xu, Y.

J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Yang, C.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[CrossRef]

Yeh, D.

M. Hsieh, C. Wang, L. Chen, T. Lin, M. Ke, Y. Cheng, Y. Yu, C. Chen, D. Yeh, C. Lu, C. Huang, C. Yang, and J. Huang, “Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
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Figures (6)

Fig. 1
Fig. 1

(a) AFM image of periodic nano-cone arrays with Si QDs/SiO2 multilayer on the nano-patterned p-Si substrate. Inset is the cross-sectional AFM images for 8min and 16min etched Si substrates. (b) The cross-sectional TEM image of 10min etched nano-patterned substrate with Si QDs/SiO2 multilayer on it. Inset of figure (b) is the high resolution TEM image and the formation of Si QDs can be clearly identified.

Fig. 2
Fig. 2

Etching depths of the nano-patterned substrates versus the etching time.

Fig. 3
Fig. 3

Reflection spectra of the polished and nano-patterned substrates with various depths by changing the etching time.

Fig. 4
Fig. 4

Reflection spectra of the Si QDs/SiO2 multilayer on nano-patterned substrates with various depths.

Fig. 5
Fig. 5

Room temperature photo-luminescence from Si QDs/SiO2 multilayer on flat and nano-patterned substrates under the excitation of He-Cd laser (325nm).

Fig. 6
Fig. 6

Integrated photo-luminescence intensity of Si QDs/SiO2 multilayer as a function of the etching time.

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