Abstract

Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.

© 2011 OSA

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    [CrossRef]
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2011 (6)

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

K. Tomioka and T. Fukui, “Tunnel field-effect transistor using InAs nanowire/Si heterojunction,” Appl. Phys. Lett. 98(8), 083114 (2011).
[CrossRef]

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

B. R. Burg and D. Poulikakos, “Large-scale integration of single-walled carbon nanotubes and graphene into sensors and devices using dielectrophoresis: a review,” J. Mater. Res. 26(13), 1561–1571 (2011).
[CrossRef]

2010 (3)

K. Kim, J. Kang, M. Lee, C. Yoon, K. Cho, and S. Kim, “Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes,” Jpn. J. Appl. Phys. 49(6), 06GG05 (2010).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction,” Appl. Phys. Lett. 96(13), 132105 (2010).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction,” Appl. Phys. Lett. 97(8), 082111 (2010).
[CrossRef]

2009 (1)

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

2008 (2)

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

X. W. Sun, J. Z. Huang, J. X. Wang, and Z. Xu, “A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm,” Nano Lett. 8(4), 1219–1223 (2008).
[CrossRef] [PubMed]

2007 (2)

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[CrossRef] [PubMed]

A. Motayed, A. V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, “365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes,” Appl. Phys. Lett. 90(18), 183120 (2007).
[CrossRef]

2006 (2)

Y. Li, F. Qian, J. Xiang, and C. M. Lieber, “Nanowire electronic and optoelectronic devices,” Mater. Today 9(10), 18–27 (2006).
[CrossRef]

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

2005 (3)

Y. Huang, X. Duan, and C. M. Lieber, “Nanowires for integrated multicolor nanophotonics,” Small 1(1), 142–147 (2005).
[CrossRef] [PubMed]

F. Qian, S. Gradečak, Y. Li, C.-Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5(11), 2287–2291 (2005).
[CrossRef] [PubMed]

A. Janotti and C. G. Van de Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87(12), 122102 (2005).
[CrossRef]

1994 (1)

G. H. Markx, M. S. Talary, and R. Pethig, “Separation of viable and non-viable yeast using dielectrophoresis,” J. Biotechnol. 32(1), 29–37 (1994).
[CrossRef] [PubMed]

1980 (1)

J. A. Aranovich, D. Golmayo, A. L. Fahrenbruch, and R. H. Bube, “Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis,” J. Appl. Phys. 51(8), 4260–4268 (1980).
[CrossRef]

1979 (1)

J. Aranovich, A. Ortiz, and R. H. Bube, “Optical and electrical properties of ZnO films prepared by spray pyrolysis for solar cell applications,” J. Vac. Sci. Technol. 16(4), 994 (1979).
[CrossRef]

Ahn, J.

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction,” Appl. Phys. Lett. 96(13), 132105 (2010).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction,” Appl. Phys. Lett. 97(8), 082111 (2010).
[CrossRef]

Aloni, S.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[CrossRef] [PubMed]

Aranovich, J.

J. Aranovich, A. Ortiz, and R. H. Bube, “Optical and electrical properties of ZnO films prepared by spray pyrolysis for solar cell applications,” J. Vac. Sci. Technol. 16(4), 994 (1979).
[CrossRef]

Aranovich, J. A.

J. A. Aranovich, D. Golmayo, A. L. Fahrenbruch, and R. H. Bube, “Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis,” J. Appl. Phys. 51(8), 4260–4268 (1980).
[CrossRef]

Bardotti, L.

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

Bassett, K. P.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Benoit, J.-M.

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

Bourhis, E.

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

Braun, P. V.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Bube, R. H.

J. A. Aranovich, D. Golmayo, A. L. Fahrenbruch, and R. H. Bube, “Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis,” J. Appl. Phys. 51(8), 4260–4268 (1980).
[CrossRef]

J. Aranovich, A. Ortiz, and R. H. Bube, “Optical and electrical properties of ZnO films prepared by spray pyrolysis for solar cell applications,” J. Vac. Sci. Technol. 16(4), 994 (1979).
[CrossRef]

Burg, B. R.

B. R. Burg and D. Poulikakos, “Large-scale integration of single-walled carbon nanotubes and graphene into sensors and devices using dielectrophoresis: a review,” J. Mater. Res. 26(13), 1561–1571 (2011).
[CrossRef]

Cao, G.

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

Chen, X.

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

Cho, K.

K. Kim, J. Kang, M. Lee, C. Yoon, K. Cho, and S. Kim, “Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes,” Jpn. J. Appl. Phys. 49(6), 06GG05 (2010).
[CrossRef]

Cho, N. K.

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

Choi, H. J.

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

Chung, H. J.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Coleman, J. J.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Culligan, P. J.

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

Davydov, A. V.

A. Motayed, A. V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, “365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes,” Appl. Phys. Lett. 90(18), 183120 (2007).
[CrossRef]

Dias, N. L.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Duan, X.

Y. Huang, X. Duan, and C. M. Lieber, “Nanowires for integrated multicolor nanophotonics,” Small 1(1), 142–147 (2005).
[CrossRef] [PubMed]

Dunham, S. N.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Eddy, C. R.

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction,” Appl. Phys. Lett. 96(13), 132105 (2010).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction,” Appl. Phys. Lett. 97(8), 082111 (2010).
[CrossRef]

Fahrenbruch, A. L.

J. A. Aranovich, D. Golmayo, A. L. Fahrenbruch, and R. H. Bube, “Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis,” J. Appl. Phys. 51(8), 4260–4268 (1980).
[CrossRef]

Faini, G.

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

Fukui, T.

K. Tomioka and T. Fukui, “Tunnel field-effect transistor using InAs nanowire/Si heterojunction,” Appl. Phys. Lett. 98(8), 083114 (2011).
[CrossRef]

Gierak, J.

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

Giraud, R.

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

Golmayo, D.

J. A. Aranovich, D. Golmayo, A. L. Fahrenbruch, and R. H. Bube, “Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis,” J. Appl. Phys. 51(8), 4260–4268 (1980).
[CrossRef]

Gradecak, S.

F. Qian, S. Gradečak, Y. Li, C.-Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5(11), 2287–2291 (2005).
[CrossRef] [PubMed]

Ha, J. S.

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

Han, A.

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

Harmand, J.-C.

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

He, M.

A. Motayed, A. V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, “365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes,” Appl. Phys. Lett. 90(18), 183120 (2007).
[CrossRef]

Hite, J.

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction,” Appl. Phys. Lett. 96(13), 132105 (2010).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction,” Appl. Phys. Lett. 97(8), 082111 (2010).
[CrossRef]

Hong, Y. J.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Huang, J. Z.

X. W. Sun, J. Z. Huang, J. X. Wang, and Z. Xu, “A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm,” Nano Lett. 8(4), 1219–1223 (2008).
[CrossRef] [PubMed]

Huang, Y.

Y. Huang, X. Duan, and C. M. Lieber, “Nanowires for integrated multicolor nanophotonics,” Small 1(1), 142–147 (2005).
[CrossRef] [PubMed]

Huh, J.

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

Jabeen, F.

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

Janotti, A.

A. Janotti and C. G. Van de Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87(12), 122102 (2005).
[CrossRef]

Jung, S. W.

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

Kang, J.

K. Kim, J. Kang, M. Lee, C. Yoon, K. Cho, and S. Kim, “Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes,” Jpn. J. Appl. Phys. 49(6), 06GG05 (2010).
[CrossRef]

Kim, D.

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

Kim, G.-T.

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

Kim, J.

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction,” Appl. Phys. Lett. 96(13), 132105 (2010).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction,” Appl. Phys. Lett. 97(8), 082111 (2010).
[CrossRef]

Kim, K.

K. Kim, J. Kang, M. Lee, C. Yoon, K. Cho, and S. Kim, “Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes,” Jpn. J. Appl. Phys. 49(6), 06GG05 (2010).
[CrossRef]

Kim, M.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Kim, S.

K. Kim, J. Kang, M. Lee, C. Yoon, K. Cho, and S. Kim, “Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes,” Jpn. J. Appl. Phys. 49(6), 06GG05 (2010).
[CrossRef]

Kim, T.

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

Kim, T. H.

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

Kim, Y.-K.

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

Kuykendall, T.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[CrossRef] [PubMed]

Lee, C.-H.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Lee, M.

K. Kim, J. Kang, M. Lee, C. Yoon, K. Cho, and S. Kim, “Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes,” Jpn. J. Appl. Phys. 49(6), 06GG05 (2010).
[CrossRef]

Lee, S. K.

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

Lee, S. Y.

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

Li, X.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Li, Y.

Y. Li, F. Qian, J. Xiang, and C. M. Lieber, “Nanowire electronic and optoelectronic devices,” Mater. Today 9(10), 18–27 (2006).
[CrossRef]

F. Qian, S. Gradečak, Y. Li, C.-Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5(11), 2287–2291 (2005).
[CrossRef] [PubMed]

Lieber, C. M.

Y. Li, F. Qian, J. Xiang, and C. M. Lieber, “Nanowire electronic and optoelectronic devices,” Mater. Today 9(10), 18–27 (2006).
[CrossRef]

Y. Huang, X. Duan, and C. M. Lieber, “Nanowires for integrated multicolor nanophotonics,” Small 1(1), 142–147 (2005).
[CrossRef] [PubMed]

F. Qian, S. Gradečak, Y. Li, C.-Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5(11), 2287–2291 (2005).
[CrossRef] [PubMed]

Liu, L.

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

Lucot, D.

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

Mailly, D.

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

Markx, G. H.

G. H. Markx, M. S. Talary, and R. Pethig, “Separation of viable and non-viable yeast using dielectrophoresis,” J. Biotechnol. 32(1), 29–37 (1994).
[CrossRef] [PubMed]

Mastro, M. A.

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction,” Appl. Phys. Lett. 97(8), 082111 (2010).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction,” Appl. Phys. Lett. 96(13), 132105 (2010).
[CrossRef]

Mélinon, P.

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

Melngailis, J.

A. Motayed, A. V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, “365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes,” Appl. Phys. Lett. 90(18), 183120 (2007).
[CrossRef]

Miyake, M.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Mohammad, S. N.

A. Motayed, A. V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, “365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes,” Appl. Phys. Lett. 90(18), 183120 (2007).
[CrossRef]

Motayed, A.

A. Motayed, A. V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, “365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes,” Appl. Phys. Lett. 90(18), 183120 (2007).
[CrossRef]

Na, J.

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

Nelson, E. C.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Ortiz, A.

J. Aranovich, A. Ortiz, and R. H. Bube, “Optical and electrical properties of ZnO films prepared by spray pyrolysis for solar cell applications,” J. Vac. Sci. Technol. 16(4), 994 (1979).
[CrossRef]

Ouerghi, A.

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

Park, S. C.

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

Park, Y. J.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Patriarche, G.

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

Pethig, R.

G. H. Markx, M. S. Talary, and R. Pethig, “Separation of viable and non-viable yeast using dielectrophoresis,” J. Biotechnol. 32(1), 29–37 (1994).
[CrossRef] [PubMed]

Poulikakos, D.

B. R. Burg and D. Poulikakos, “Large-scale integration of single-walled carbon nanotubes and graphene into sensors and devices using dielectrophoresis: a review,” J. Mater. Res. 26(13), 1561–1571 (2011).
[CrossRef]

Prével, B.

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

Punyamurtula, V. K.

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

Qian, F.

Y. Li, F. Qian, J. Xiang, and C. M. Lieber, “Nanowire electronic and optoelectronic devices,” Mater. Today 9(10), 18–27 (2006).
[CrossRef]

F. Qian, S. Gradečak, Y. Li, C.-Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5(11), 2287–2291 (2005).
[CrossRef] [PubMed]

Qiao, Y.

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

Rogers, J. A.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Seong, H. K.

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

Seong, H.-K.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Sone, C.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Sun, X. W.

X. W. Sun, J. Z. Huang, J. X. Wang, and Z. Xu, “A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm,” Nano Lett. 8(4), 1219–1223 (2008).
[CrossRef] [PubMed]

Talary, M. S.

G. H. Markx, M. S. Talary, and R. Pethig, “Separation of viable and non-viable yeast using dielectrophoresis,” J. Biotechnol. 32(1), 29–37 (1994).
[CrossRef] [PubMed]

Tomioka, K.

K. Tomioka and T. Fukui, “Tunnel field-effect transistor using InAs nanowire/Si heterojunction,” Appl. Phys. Lett. 98(8), 083114 (2011).
[CrossRef]

Ulrich, P.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[CrossRef] [PubMed]

Van de Walle, C. G.

A. Janotti and C. G. Van de Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87(12), 122102 (2005).
[CrossRef]

Verma, V.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Wang, J. X.

X. W. Sun, J. Z. Huang, J. X. Wang, and Z. Xu, “A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm,” Nano Lett. 8(4), 1219–1223 (2008).
[CrossRef] [PubMed]

Wen, C.-Y.

F. Qian, S. Gradečak, Y. Li, C.-Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5(11), 2287–2291 (2005).
[CrossRef] [PubMed]

Wiltzius, P.

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

Xiang, J.

Y. Li, F. Qian, J. Xiang, and C. M. Lieber, “Nanowire electronic and optoelectronic devices,” Mater. Today 9(10), 18–27 (2006).
[CrossRef]

Xu, Z.

X. W. Sun, J. Z. Huang, J. X. Wang, and Z. Xu, “A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm,” Nano Lett. 8(4), 1219–1223 (2008).
[CrossRef] [PubMed]

Yang, P.

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[CrossRef] [PubMed]

Yi, G.-C.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Yoon, A.

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Yoon, C.

K. Kim, J. Kang, M. Lee, C. Yoon, K. Cho, and S. Kim, “Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes,” Jpn. J. Appl. Phys. 49(6), 06GG05 (2010).
[CrossRef]

Adv. Mater. (Deerfield Beach Fla.) (1)

Y. J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H. J. Chung, C. Sone, Y. J. Park, and G.-C. Yi, “Visible-color-tunable light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 23(29), 3284–3288 (2011).
[CrossRef] [PubMed]

Appl. Phys. Lett. (8)

K. Tomioka and T. Fukui, “Tunnel field-effect transistor using InAs nanowire/Si heterojunction,” Appl. Phys. Lett. 98(8), 083114 (2011).
[CrossRef]

D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, and D. Mailly, “Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires,” Appl. Phys. Lett. 98(14), 142114 (2011).
[CrossRef]

A. Motayed, A. V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, “365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes,” Appl. Phys. Lett. 90(18), 183120 (2007).
[CrossRef]

B. Prével, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, and J. Gierak, “Nanostructuring graphene on SiC by focused ion beam: effect of the ion fluence,” Appl. Phys. Lett. 99(8), 083116 (2011).
[CrossRef]

D. Kim, Y.-K. Kim, S. C. Park, J. S. Ha, J. Huh, J. Na, and G.-T. Kim, “Photoconductance of aligned SnO2 nanowire field effect transistors,” Appl. Phys. Lett. 95(4), 043107 (2009).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction,” Appl. Phys. Lett. 96(13), 132105 (2010).
[CrossRef]

J. Ahn, M. A. Mastro, J. Hite, C. R. Eddy, and J. Kim, “Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction,” Appl. Phys. Lett. 97(8), 082111 (2010).
[CrossRef]

A. Janotti and C. G. Van de Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87(12), 122102 (2005).
[CrossRef]

J. Appl. Phys. (1)

J. A. Aranovich, D. Golmayo, A. L. Fahrenbruch, and R. H. Bube, “Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis,” J. Appl. Phys. 51(8), 4260–4268 (1980).
[CrossRef]

J. Biotechnol. (1)

G. H. Markx, M. S. Talary, and R. Pethig, “Separation of viable and non-viable yeast using dielectrophoresis,” J. Biotechnol. 32(1), 29–37 (1994).
[CrossRef] [PubMed]

J. Mater. Res. (1)

B. R. Burg and D. Poulikakos, “Large-scale integration of single-walled carbon nanotubes and graphene into sensors and devices using dielectrophoresis: a review,” J. Mater. Res. 26(13), 1561–1571 (2011).
[CrossRef]

J. Vac. Sci. Technol. (1)

J. Aranovich, A. Ortiz, and R. H. Bube, “Optical and electrical properties of ZnO films prepared by spray pyrolysis for solar cell applications,” J. Vac. Sci. Technol. 16(4), 994 (1979).
[CrossRef]

Jpn. J. Appl. Phys. (1)

K. Kim, J. Kang, M. Lee, C. Yoon, K. Cho, and S. Kim, “Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes,” Jpn. J. Appl. Phys. 49(6), 06GG05 (2010).
[CrossRef]

Mater. Today (1)

Y. Li, F. Qian, J. Xiang, and C. M. Lieber, “Nanowire electronic and optoelectronic devices,” Mater. Today 9(10), 18–27 (2006).
[CrossRef]

Nano Lett. (3)

X. W. Sun, J. Z. Huang, J. X. Wang, and Z. Xu, “A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm,” Nano Lett. 8(4), 1219–1223 (2008).
[CrossRef] [PubMed]

X. Chen, G. Cao, A. Han, V. K. Punyamurtula, L. Liu, P. J. Culligan, T. Kim, and Y. Qiao, “Nanoscale fluid transport: size and rate effects,” Nano Lett. 8(9), 2988–2992 (2008).
[CrossRef] [PubMed]

F. Qian, S. Gradečak, Y. Li, C.-Y. Wen, and C. M. Lieber, “Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes,” Nano Lett. 5(11), 2287–2291 (2005).
[CrossRef] [PubMed]

Nanotechnology (1)

T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006).
[CrossRef] [PubMed]

Nat. Mater. (2)

E. C. Nelson, N. L. Dias, K. P. Bassett, S. N. Dunham, V. Verma, M. Miyake, P. Wiltzius, J. A. Rogers, J. J. Coleman, X. Li, and P. V. Braun, “Epitaxial growth of three-dimensionally architectured optoelectronic devices,” Nat. Mater. 10(9), 676–681 (2011).
[CrossRef] [PubMed]

T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, “Complete composition tunability of InGaN nanowires using a combinatorial approach,” Nat. Mater. 6(12), 951–956 (2007).
[CrossRef] [PubMed]

Small (1)

Y. Huang, X. Duan, and C. M. Lieber, “Nanowires for integrated multicolor nanophotonics,” Small 1(1), 142–147 (2005).
[CrossRef] [PubMed]

Other (2)

H. A. Pohl, Dielectrophoresis (Cambridge University Press, 1978).

S. M. Sze, Physics of Semiconductor Devices (Wiley, 2007).

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Figures (3)

Fig. 1
Fig. 1

(a) Schematic and (b) SEM images of the p-Si thin film / n-ZnO nanoflower structure. The scale bar in the SEM image is 1μm.

Fig. 2
Fig. 2

(a) CL spectrum of the nanostructured ZnO (b) SEM image confirms that the ZnO nanostructures aligned parallel to the electric field after DEP process. The scale bar in the SEM image is 1μm.

Fig. 3
Fig. 3

(a) I-V characteristics and (b) band diagram of the p-Si thin film / n-ZnO nanostructure heterojunction under forward bias. Increasing the forward bias allows holes in the valence band of Si to overcome the discontinuity of the valence band and recombine with the electrons in the conduction band of ZnO. Optical micrograph of the p-Si thin film / n-ZnO nanostructured heterojunction LED at (c) 0V and (d) 10V.

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