K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]
J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref]
[PubMed]
U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]
F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]
D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]
I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]
I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]
G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]
C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
[Crossref]
A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]
C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]
G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]
A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]
U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]
I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]
L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref]
[PubMed]
F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]
F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]
D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]
F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]
D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]
A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
[Crossref]
C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]
U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]
F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]
U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]
F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]
I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]
D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]
D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]
F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]
G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]
F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]
D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]
D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]
I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]
I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]
G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]
C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]
K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]
F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]
F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]
A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]
C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
[Crossref]
C. Y. Lin, F. Grillot, Y. Li, R. Raghunathan, and L. F. Lester, “Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser,” Opt. Express 18(21), 21932–21937 (2010).
[Crossref]
[PubMed]
K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref]
[PubMed]
L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref]
[PubMed]
J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref]
[PubMed]
U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]
A. Shen, F. van Dijk, J. Renaudier, G. H. Duan, F. Lelarge, F. Pommereau, F. Poingt, L. Le Gouezigou, and O. Le Gouezigou, “Active mode-locking of quantum dot Fabry-Perot laser diode,” in IEEE 20th Int. Semiconductor Laser Conf. (2006), pp.153–154.
L. Nugent-Glandorf, T. Johnson, Y. Kobayashi, and S. Diddams, “The influence of cavity dispersion on amplitude and frequency noise in a Yb-fiber laser comb,” Baltimore, USA, Conference on lasers and Electro-Optics (CLEO) (2011), CTuA3.