10 GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter

L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref] [PubMed]

C. Y. Lin, F. Grillot, Y. Li, R. Raghunathan, and L. F. Lester, “Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser,” Opt. Express 18(21), 21932–21937 (2010).
[Crossref] [PubMed]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref] [PubMed]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]

I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]

C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
[Crossref]

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]

L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref] [PubMed]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref] [PubMed]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref] [PubMed]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref] [PubMed]

C. Y. Lin, F. Grillot, Y. Li, R. Raghunathan, and L. F. Lester, “Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser,” Opt. Express 18(21), 21932–21937 (2010).
[Crossref] [PubMed]

L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref] [PubMed]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
[Crossref]

C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]

L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref] [PubMed]

J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref] [PubMed]

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]

J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref] [PubMed]

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

C. Y. Lin, F. Grillot, Y. Li, R. Raghunathan, and L. F. Lester, “Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser,” Opt. Express 18(21), 21932–21937 (2010).
[Crossref] [PubMed]

C. Y. Lin, F. Grillot, Y. Li, R. Raghunathan, and L. F. Lester, “Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser,” Opt. Express 18(21), 21932–21937 (2010).
[Crossref] [PubMed]

C. Y. Lin, F. Grillot, Y. Li, R. Raghunathan, and L. F. Lester, “Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser,” Opt. Express 18(21), 21932–21937 (2010).
[Crossref] [PubMed]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref] [PubMed]

L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref] [PubMed]

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

C. Y. Lin, F. Grillot, Y. Li, R. Raghunathan, and L. F. Lester, “Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser,” Opt. Express 18(21), 21932–21937 (2010).
[Crossref] [PubMed]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref] [PubMed]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]

I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]

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