Abstract

We present a 10 GHz 1.55 μm all-active passively mode-locked laser based on a novel AlGaInAs/InP epitaxial structure with a three-quantum-well active layer and a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-the-art timing jitter value of 194 fs (4-80 MHz), and a radio-frequency linewidth of 2 kHz, while demonstrating a low divergence angle (14.7° × 27.3°) with a twofold butt coupling efficiency to a flat cleaved single mode fiber, compared to the conventional five-quantum-well MLLs.

© 2011 OSA

Full Article  |  PDF Article
OSA Recommended Articles
Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers

Lianping Hou, Mohsin Haji, Jehan Akbar, Bocang Qiu, and A. Catrina Bryce
Opt. Lett. 36(6) 966-968 (2011)

Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J.-P. Tourrenc, F. Lelarge, F. Van Dijk, G.-H. Duan, G. Aubin, and A. Ramdane
Opt. Express 16(14) 10675-10683 (2008)

Passively mode-locked III-V/silicon laser with continuous-wave optical injection

Yuanbing Cheng, Xianshu Luo, Junfeng Song, Tsung-Yang Liow, Guo-Qiang Lo, Yulian Cao, Xiaonan Hu, Xiaohui Li, Peng Huei Lim, and Qi Jie Wang
Opt. Express 23(5) 6392-6399 (2015)

More Recommended Articles

References

  • View by:
  • Article Order
  • |
  • Year
  • |
  • Author
  • |
  • Publication
  1. K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
    [Crossref]
  2. G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
    [Crossref]
  3. F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
    [Crossref]
  4. L. Nugent-Glandorf, T. Johnson, Y. Kobayashi, and S. Diddams, “The influence of cavity dispersion on amplitude and frequency noise in a Yb-fiber laser comb,” Baltimore, USA, Conference on lasers and Electro-Optics (CLEO) (2011), CTuA3.
  5. C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
    [Crossref]
  6. K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
    [Crossref]
  7. K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
    [Crossref] [PubMed]
  8. L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
    [Crossref] [PubMed]
  9. D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
    [Crossref]
  10. J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
    [Crossref] [PubMed]
  11. C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
    [Crossref]
  12. A. Shen, F. van Dijk, J. Renaudier, G. H. Duan, F. Lelarge, F. Pommereau, F. Poingt, L. Le Gouezigou, and O. Le Gouezigou, “Active mode-locking of quantum dot Fabry-Perot laser diode,” in IEEE 20th Int. Semiconductor Laser Conf. (2006), pp.153–154.
  13. I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
    [Crossref]
  14. I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
    [Crossref]
  15. A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
    [Crossref]
  16. U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
    [Crossref]
  17. C. Y. Lin, F. Grillot, Y. Li, R. Raghunathan, and L. F. Lester, “Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser,” Opt. Express 18(21), 21932–21937 (2010).
    [Crossref] [PubMed]
  18. F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
    [Crossref]

2011 (1)

2010 (1)

2008 (2)

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

K. Merghem, A. Akrout, A. Martinez, G. Moreau, J. P. Tourrenc, F. Lelarge, F. Van Dijk, G. H. Duan, G. Aubin, and A. Ramdane, “Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser,” Opt. Express 16(14), 10675–10683 (2008).
[Crossref] [PubMed]

2006 (2)

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

J. J. Plant, J. T. Gopinath, B. Chann, D. J. Ripin, R. K. Huang, and P. W. Juodawlkis, “250 mW, 1.5µm monolithic passively mode-locked slab-coupled optical waveguide laser,” Opt. Lett. 31(2), 223–225 (2006).
[Crossref] [PubMed]

2004 (2)

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

1997 (1)

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

1996 (1)

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

1993 (2)

I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]

I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]

1989 (1)

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]

1986 (1)

C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
[Crossref]

1983 (1)

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

1982 (1)

C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]

Agrawal, G. P.

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]

Akbar, J.

Akrout, A.

Angelo, C.

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

Aubin, G.

Avrutin, E. A.

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

Ballman, A. A.

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

Bandelow, U.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

BEYLAT, J. L.

I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]

Birkedal, D.

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

Brown, H.

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

Bryce, A. C.

L. Hou, M. Haji, J. Akbar, B. C. Qiu, and A. C. Bryce, “Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers,” Opt. Lett. 36(6), 966–968 (2011).
[Crossref] [PubMed]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

Camacho, F.

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

Chann, B.

Christiansen, L. J.

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

Connolly, J. C.

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

Cusumano, P.

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

Duan, G. H.

Forrest, S. R.

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

Garbuzov, D.

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

Glass, A. M.

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

Gopinath, J. T.

Grillot, F.

Haji, M.

Hanberg, J.

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

Henry, C. H.

C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
[Crossref]

C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]

Hou, L.

Huang, R. K.

Hüttl, B.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

Huyet, G.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Hvam, J. M.

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

Joindot, I.

I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]

Juodawlkis, P. W.

Kaiser, R.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

Kefelian, F.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Kim, I.

I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]

Larsson, D.

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

Lau, K. Y.

I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]

Lelarge, F.

Lester, L. F.

Li, Y.

Lin, C. Y.

Marsh, J. H.

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

Martinelli, R.

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

Martinez, A.

McInerney, J. G.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Menna, R.

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

Merghem, K.

Moreau, G.

Mork, J.

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

Mørk, J.

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

Nahory, R. E.

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

O’Donoghue, S.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Olsson, N. A.

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]

Oxenløwe, L. K.

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

Plant, J. J.

Qiu, B. C.

Radziunas, M.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

Raghunathan, R.

Ramdane, A.

Ripin, D. J.

Saher Helmy, A.

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

Todaro, M. T.

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

Tourrenc, J. P.

Van Dijk, F.

Vladimirov, A.

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

Xu, L.

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

Yvind, K.

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

Electron. Lett. (3)

K. Yvind, D. Larsson, L. J. Christiansen, J. Mork, J. M. Hvam, and J. Hanberg, “High-performance10 GHz all-active monolithic mode-locked semiconductor lasers,” Electron. Lett. 40(12), 735–737 (2004).
[Crossref]

D. Garbuzov, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, “1.5 μm wavelength, SCH-MOW InGaAsP/lnP broadened-waveguide laser diodes with low internal loss and high output power,” Electron. Lett. 32(18), 1717–1719 (1996).
[Crossref]

I. Joindot and J. L. BEYLAT, “Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers,” Electron. Lett. 29(7), 604–606 (1993).
[Crossref]

IEEE J. Quantum Electron. (3)

I. Kim and K. Y. Lau, “Frequency and timing stability of mode-locked semiconductor lasers-passive and active mode locking up to millimeter wave frequencies,” IEEE J. Quantum Electron. 29(4), 1081–1090 (1993).
[Crossref]

G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron. 25(11), 2297–2306 (1989).
[Crossref]

C. H. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[Crossref]

IEEE Photon. Technol. Lett. (3)

K. Yvind, D. Larsson, L. J. Christiansen, C. Angelo, L. K. Oxenløwe, J. Mørk, D. Birkedal, J. M. Hvam, and J. Hanberg, “Low-jitter and high-power 40GHz all-active mode-locked lasers,” IEEE Photon. Technol. Lett. 16(4), 975–977 (2004).
[Crossref]

F. Camacho, E. A. Avrutin, P. Cusumano, A. Saher Helmy, A. C. Bryce, and J. H. Marsh, “Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum well intermixing,” IEEE Photon. Technol. Lett. 9(9), 1208–1210 (1997).
[Crossref]

F. Kefelian, S. O’Donoghue, M. T. Todaro, J. G. McInerney, and G. Huyet, “RF linewidth in monolithic passively mode-locked semiconductor laser,” IEEE Photon. Technol. Lett. 20(16), 1405–1407 (2008).
[Crossref]

J. Cryst. Growth (1)

A. A. Ballman, A. M. Glass, R. E. Nahory, and H. Brown, “Double doped low etch pit density InP with reduced optical absorption,” J. Cryst. Growth 62(1), 198–202 (1983).
[Crossref]

J. Lightwave Technol. (1)

C. H. Henry, “Phase noise in semiconductor lasers,” J. Lightwave Technol. 4(3), 298–311 (1986).
[Crossref]

Opt. Express (2)

Opt. Lett. (2)

Opt. Quantum Electron. (1)

U. Bandelow, M. Radziunas, A. Vladimirov, B. Hüttl, and R. Kaiser, “40 GHz mode-locked semiconductor lasers: theory, simulations and experiment,” Opt. Quantum Electron. 38(4-6), 495–512 (2006).
[Crossref]

Other (2)

A. Shen, F. van Dijk, J. Renaudier, G. H. Duan, F. Lelarge, F. Pommereau, F. Poingt, L. Le Gouezigou, and O. Le Gouezigou, “Active mode-locking of quantum dot Fabry-Perot laser diode,” in IEEE 20th Int. Semiconductor Laser Conf. (2006), pp.153–154.

L. Nugent-Glandorf, T. Johnson, Y. Kobayashi, and S. Diddams, “The influence of cavity dispersion on amplitude and frequency noise in a Yb-fiber laser comb,” Baltimore, USA, Conference on lasers and Electro-Optics (CLEO) (2011), CTuA3.

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1

(a) simulated effective index (neff) and (b) the overlap with the QWs as a function of FRL thickness for the different transverse mode.

Download Full Size | PPT Slide | PDF

Fig. 2
Fig. 2

The optical intensity through the epilayer structure for various FRL configurations: (a) 0.11 μm FRL, 1.0 μm spacer, (b) 0.16 μm FRL, 0.75 μm spacer, and (c) 0.29 μm FRL, 0.50 μm spacer.

Download Full Size | PPT Slide | PDF

Fig. 3
Fig. 3

(a) Typical L-Igain characteristics for different VSA, from 0 to −3 V with a step of −0.5 V, and (b) measured FFP of the device with a 1.65 μm high ridge, and (c) measured FFP of the device with a 1.85 μm high ridge.

Download Full Size | PPT Slide | PDF

Fig. 4
Fig. 4

(a) Measured map of ML regime of laser operation vs the Igain and VSA, and (b) FWHM of the autocorrelation trace vs the Igain for different VSA.

Download Full Size | PPT Slide | PDF

Fig. 5
Fig. 5

(a) Measured autocorrelation pulse trains, (b) an isolated pulse fitting by a sech2 shape, (c) RF spectrum, (d) optical spectrum, and (e) SSB noise for Igain = 142 mA, VSA = −2.8 V.

Download Full Size | PPT Slide | PDF

Tables (1)

Tables Icon

Table 1 Calculated Parameters of the Structures Simulated in Fig. 1

View Table

Metrics