Abstract

We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.

© 2011 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. K. J. Williams, L. T. Nichols, and R. D. Esman, “Photodetector nonlinearity limitations on a high-dynamic range 3 GHz fiber optic link,” J. Lightwave Technol. 16(2), 192–199 (1998).
    [CrossRef]
  2. P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, “Saturation characteristics of fast photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1297–1303 (1999).
    [CrossRef]
  3. T. Ishibashi and N. Shimizu, “Uni-traveling-carrier photodiodes,” in Ultrafast Electron. Optoelectron. ’97 Conf., Incline Village, NV (1997).
  4. Z. Li, H. Pan, H. Chen, A. Beling, and J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46(5), 626–632 (2010).
    [CrossRef]
  5. F.-M. Kuo, M.-Z. Chou, and J.-W. Shi, “Linear-cascaded near-ballistic unitraveling-carrier photodiodes with an extremely high saturation current-bandwidth product,” J. Lightwave Technol. 29(4), 432–438 (2011).
    [CrossRef]
  6. S. Itakura, K. Sakai, T. Nagatsuka, E. Ishimura, M. Nakaji, H. Otsuka, K. Mori, and Y. Hirano, “High-current backside-illuminated photodiode array module for optical analog links,” J. Lightwave Technol. 28(6), 965–971 (2010).
    [CrossRef]
  7. J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
    [CrossRef]
  8. H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
    [CrossRef]
  9. H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterization of high-linearity modified uni-traveling carrier photodiodes using three-tone and bias modulation techniques,” J. Lightwave Technol. 28(9), 1316–1322 (2010).
    [CrossRef]
  10. A. Beling, H. Pan, H. Chen, J. C. Campbell, A. Hastings, D. A. Tulchinsky, and K. J. Williams, “Impact of voltage-dependent responsivity on photodiode non-linearity,” in Proc. LEOS 2008, Newport Beach, CA, Nov. 2008, pp. 157–158.
  11. Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes,” IEEE J. Quantum Electron. 47(10), 1312–1319 (2011).
    [CrossRef]
  12. H. Pan, A. Beling, H. Chen, J. C. Campbell, and P. D. Yoder, “The influence of nonlinear capacitance on the linearity of a modified unitraveling carrier photodiode,” in Proc. MWP 2008, Gold Coast, Australia, Oct. 2008, pp. 82–85.
  13. D. A. Tulchinsky, J. B. Boos, D. Park, P. G. Goetz, W. S. Rabinovich, and K. J. Williams, “High-current photodetectors as efficient, linear, and high-power RF output stages,” J. Lightwave Technol. 26(4), 408–416 (2008).
    [CrossRef]
  14. T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
    [CrossRef]
  15. M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
    [CrossRef]

2011

F.-M. Kuo, M.-Z. Chou, and J.-W. Shi, “Linear-cascaded near-ballistic unitraveling-carrier photodiodes with an extremely high saturation current-bandwidth product,” J. Lightwave Technol. 29(4), 432–438 (2011).
[CrossRef]

Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes,” IEEE J. Quantum Electron. 47(10), 1312–1319 (2011).
[CrossRef]

2010

2008

J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
[CrossRef]

D. A. Tulchinsky, J. B. Boos, D. Park, P. G. Goetz, W. S. Rabinovich, and K. J. Williams, “High-current photodetectors as efficient, linear, and high-power RF output stages,” J. Lightwave Technol. 26(4), 408–416 (2008).
[CrossRef]

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

2004

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
[CrossRef]

2002

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

1999

P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, “Saturation characteristics of fast photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1297–1303 (1999).
[CrossRef]

1998

Achouche, M.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Beling, A.

Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes,” IEEE J. Quantum Electron. 47(10), 1312–1319 (2011).
[CrossRef]

Z. Li, H. Pan, H. Chen, A. Beling, and J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46(5), 626–632 (2010).
[CrossRef]

H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterization of high-linearity modified uni-traveling carrier photodiodes using three-tone and bias modulation techniques,” J. Lightwave Technol. 28(9), 1316–1322 (2010).
[CrossRef]

Bernard, S.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Boos, J. B.

Campbell, J. C.

Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes,” IEEE J. Quantum Electron. 47(10), 1312–1319 (2011).
[CrossRef]

H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterization of high-linearity modified uni-traveling carrier photodiodes using three-tone and bias modulation techniques,” J. Lightwave Technol. 28(9), 1316–1322 (2010).
[CrossRef]

Z. Li, H. Pan, H. Chen, A. Beling, and J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46(5), 626–632 (2010).
[CrossRef]

Carpentier, D.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Chen, H.

Z. Li, H. Pan, H. Chen, A. Beling, and J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46(5), 626–632 (2010).
[CrossRef]

Chou, M.-Z.

Christofferson, J.

J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
[CrossRef]

Chtioui, M.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Doi, Y.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Enard, A.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Esman, R. D.

P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, “Saturation characteristics of fast photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1297–1303 (1999).
[CrossRef]

K. J. Williams, L. T. Nichols, and R. D. Esman, “Photodetector nonlinearity limitations on a high-dynamic range 3 GHz fiber optic link,” J. Lightwave Technol. 16(2), 192–199 (1998).
[CrossRef]

Ezzahri, Y.

J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
[CrossRef]

Frankel, M. Y.

P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, “Saturation characteristics of fast photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1297–1303 (1999).
[CrossRef]

Fu, Y.

Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes,” IEEE J. Quantum Electron. 47(10), 1312–1319 (2011).
[CrossRef]

Fukano, H.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Furuta, T.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
[CrossRef]

Goetz, P. G.

Hirano, Y.

Ishibashi, T.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
[CrossRef]

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Ishimura, E.

Itakura, S.

Ito, H.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
[CrossRef]

Kodama, S.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
[CrossRef]

Kuo, F.-M.

Lelarge, F.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Li, Z.

Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes,” IEEE J. Quantum Electron. 47(10), 1312–1319 (2011).
[CrossRef]

H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterization of high-linearity modified uni-traveling carrier photodiodes using three-tone and bias modulation techniques,” J. Lightwave Technol. 28(9), 1316–1322 (2010).
[CrossRef]

Z. Li, H. Pan, H. Chen, A. Beling, and J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46(5), 626–632 (2010).
[CrossRef]

Liu, P.-L.

P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, “Saturation characteristics of fast photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1297–1303 (1999).
[CrossRef]

Maize, K.

J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
[CrossRef]

Mori, K.

Muramoto, Y.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
[CrossRef]

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Nagatsuka, T.

Nagatsuma, T.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
[CrossRef]

Nakaji, M.

Nichols, L. T.

Ohno, T.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Otsuka, H.

Pan, H.

Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes,” IEEE J. Quantum Electron. 47(10), 1312–1319 (2011).
[CrossRef]

Z. Li, H. Pan, H. Chen, A. Beling, and J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46(5), 626–632 (2010).
[CrossRef]

H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterization of high-linearity modified uni-traveling carrier photodiodes using three-tone and bias modulation techniques,” J. Lightwave Technol. 28(9), 1316–1322 (2010).
[CrossRef]

Park, D.

Pommereau, F.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Rabinovich, W. S.

Rousseau, B.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Sakai, K.

Shabani, J.

J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
[CrossRef]

Shakouri, A.

J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
[CrossRef]

Shi, J.-W.

Tulchinsky, D. A.

Wang, X.

J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
[CrossRef]

Williams, K. J.

Yoshimatsu, T.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

IEEE J. Quantum Electron.

Z. Li, H. Pan, H. Chen, A. Beling, and J. C. Campbell, “High-saturation-current modified uni-traveling-carrier photodiode with cliff layer,” IEEE J. Quantum Electron. 46(5), 626–632 (2010).
[CrossRef]

Y. Fu, H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Characterizing and modeling nonlinear intermodulation distortions in modified uni-travelling carrier photodiodes,” IEEE J. Quantum Electron. 47(10), 1312–1319 (2011).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004).
[CrossRef]

IEEE Photon. Technol. Lett.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a uni-traveling carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

IEEE Trans. Microw. Theory Tech.

P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, “Saturation characteristics of fast photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1297–1303 (1999).
[CrossRef]

J. Electron. Packag.

J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008).
[CrossRef]

J. Lightwave Technol.

Other

H. Pan, A. Beling, H. Chen, J. C. Campbell, and P. D. Yoder, “The influence of nonlinear capacitance on the linearity of a modified unitraveling carrier photodiode,” in Proc. MWP 2008, Gold Coast, Australia, Oct. 2008, pp. 82–85.

T. Ishibashi and N. Shimizu, “Uni-traveling-carrier photodiodes,” in Ultrafast Electron. Optoelectron. ’97 Conf., Incline Village, NV (1997).

A. Beling, H. Pan, H. Chen, J. C. Campbell, A. Hastings, D. A. Tulchinsky, and K. J. Williams, “Impact of voltage-dependent responsivity on photodiode non-linearity,” in Proc. LEOS 2008, Newport Beach, CA, Nov. 2008, pp. 157–158.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1

(a) The layout image and (b) thermal image of 34-μm backside-illuminated MUTC photodiode.

Fig. 2
Fig. 2

(a) Measured and simulated surface temperatures of 34- and 40-μm-diameter backside-illuminated photodiodes under different heat generation levels. (b) Simulated surface temperature distribution of 40-μm-diameter photodiode with 680 mW heat flow.

Fig. 3
Fig. 3

Simulated vertical cross section temperature distribution of a 40-μm MUTC photodiode: (a) conventional back-illuminated structure, (b) flip-chip bonded on AlN substrate with 680 mW power dissipation.

Fig. 4
Fig. 4

(a) Cross-sectional schematic view of the photodiode. (b) SEM picture of the bonded chip on probe pads.

Fig. 5
Fig. 5

(a) Frequency responses of 40-μm flip-chip bonded photodiode under various photocurrent conditions at 5-V reverse bias. (b) S-parameter S11 of 40-μm flip-chip MUTC2 photodiode at various bias levels.

Fig. 6
Fig. 6

(a) Measured RF power versus average photocurrent at 15 GHz, under various bias levels. (b) Maximum output power at various bias levels versus frequency.

Fig. 7
Fig. 7

OIP3 of 40-μm MUTC PD versus photocurrent at various bias levels measured (a) at 330 MHz and (b) at 15 GHz.

Metrics