Abstract

Continuous-wave operation of a diamond Raman laser, intracavity-pumped by a diode-pumped InGaAs semiconductor disk laser (SDL), is reported. The Raman laser, which utilized a 6.5-mm-long synthetic single-crystal diamond, reached threshold for 5.3 W of diode laser pump power absorbed by the SDL. Output power up to 1.3 W at the first Stokes wavelength of 1227 nm was demonstrated with excellent beam quality and optical conversion efficiency of 14.4% with respect to absorbed diode laser pump power. Broad tuning of the Raman laser output between 1217 and 1244 nm was achieved via intracavity tuning of the SDL oscillation wavelength.

© 2011 OSA

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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]

2011

2010

A. Sabella, J. A. Piper, and R. P. Mildren, “1240 nm diamond Raman laser operating near the quantum limit,” Opt. Lett. 35(23), 3874–3876 (2010).
[CrossRef] [PubMed]

I. Friel, S. L. Geoghegan, D. J. Twitchen, and G. A. Scarsbrook, “Development of high quality single crystal diamond for novel laser applications,” Proc. SPIE 7838, 783819, 783819-8 (2010).
[CrossRef]

2009

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 407–434 (2009).
[CrossRef]

L. Fan, Y.-X. Fan, Y.-Q. Li, H. Zhang, Q. Wang, J. Wang, and H.-T. Wang, “High-efficiency continuous-wave Raman conversion with a BaWO(4) Raman crystal,” Opt. Lett. 34(11), 1687–1689 (2009).
[CrossRef] [PubMed]

R. P. Mildren and A. Sabella, “Highly efficient diamond Raman laser,” Opt. Lett. 34(18), 2811–2813 (2009).
[CrossRef] [PubMed]

2008

2007

J. A. Piper and H. M. Pask, “Crystalline Raman lasers,” IEEE J. Sel. Top. Quantum Electron. 13(3), 692–704 (2007).
[CrossRef]

2004

A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. Hoogland, “Vertical-external-cavity semiconductor lasers,” J. Phys. D 37(9), R75–R85 (2004).
[CrossRef]

Bellancourt, A.-R.

Bohn, M. J.

Bonner, G. M.

Brasseur, J. K.

Burns, D.

Calvez, S.

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 407–434 (2009).
[CrossRef]

Dawson, M. D.

Fan, L.

Fan, Y.-X.

Feve, J.-P. M.

Foreman, H. D.

A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. Hoogland, “Vertical-external-cavity semiconductor lasers,” J. Phys. D 37(9), R75–R85 (2004).
[CrossRef]

Friel, I.

W. Lubeigt, V. G. Savitski, G. M. Bonner, S. L. Geoghegan, I. Friel, J. E. Hastie, M. D. Dawson, D. Burns, and A. J. Kemp, “1.6 W continuous-wave Raman laser using low-loss synthetic diamond,” Opt. Express 19(7), 6938–6944 (2011).
[CrossRef] [PubMed]

I. Friel, S. L. Geoghegan, D. J. Twitchen, and G. A. Scarsbrook, “Development of high quality single crystal diamond for novel laser applications,” Proc. SPIE 7838, 783819, 783819-8 (2010).
[CrossRef]

Garnache, A.

A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. Hoogland, “Vertical-external-cavity semiconductor lasers,” J. Phys. D 37(9), R75–R85 (2004).
[CrossRef]

Geoghegan, S. L.

W. Lubeigt, V. G. Savitski, G. M. Bonner, S. L. Geoghegan, I. Friel, J. E. Hastie, M. D. Dawson, D. Burns, and A. J. Kemp, “1.6 W continuous-wave Raman laser using low-loss synthetic diamond,” Opt. Express 19(7), 6938–6944 (2011).
[CrossRef] [PubMed]

I. Friel, S. L. Geoghegan, D. J. Twitchen, and G. A. Scarsbrook, “Development of high quality single crystal diamond for novel laser applications,” Proc. SPIE 7838, 783819, 783819-8 (2010).
[CrossRef]

Gini, E.

Guina, M.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 407–434 (2009).
[CrossRef]

Härkönen, A.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Hastie, J. E.

Hoffmann, M.

Hoogland, S.

A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. Hoogland, “Vertical-external-cavity semiconductor lasers,” J. Phys. D 37(9), R75–R85 (2004).
[CrossRef]

Hopkins, J.-M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).
[CrossRef]

Keller, U.

Kemp, A. J.

Korpijärvi, V.-M.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Li, Y.-Q.

Lubeigt, W.

Maas, D. J. H. C.

Mildren, R. P.

Okhotnikov, O.

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 407–434 (2009).
[CrossRef]

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Parrotta, D. C.

Pask, H. M.

J. A. Piper and H. M. Pask, “Crystalline Raman lasers,” IEEE J. Sel. Top. Quantum Electron. 13(3), 692–704 (2007).
[CrossRef]

Pessa, M.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Piper, J. A.

A. Sabella, J. A. Piper, and R. P. Mildren, “1240 nm diamond Raman laser operating near the quantum limit,” Opt. Lett. 35(23), 3874–3876 (2010).
[CrossRef] [PubMed]

J. A. Piper and H. M. Pask, “Crystalline Raman lasers,” IEEE J. Sel. Top. Quantum Electron. 13(3), 692–704 (2007).
[CrossRef]

Puustinen, J.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Rattunde, M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).
[CrossRef]

Rautiainen, J.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Rudin, B.

Rutz, A.

Sabella, A.

Savitski, V. G.

Scarsbrook, G. A.

I. Friel, S. L. Geoghegan, D. J. Twitchen, and G. A. Scarsbrook, “Development of high quality single crystal diamond for novel laser applications,” Proc. SPIE 7838, 783819, 783819-8 (2010).
[CrossRef]

Schulz, N.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).
[CrossRef]

Shortoff, K. E.

Südmeyer, T.

Tropper, A. C.

A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. Hoogland, “Vertical-external-cavity semiconductor lasers,” J. Phys. D 37(9), R75–R85 (2004).
[CrossRef]

Tukiainen, A.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Tuomisto, P.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Twitchen, D. J.

I. Friel, S. L. Geoghegan, D. J. Twitchen, and G. A. Scarsbrook, “Development of high quality single crystal diamond for novel laser applications,” Proc. SPIE 7838, 783819, 783819-8 (2010).
[CrossRef]

Wagner, J.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).
[CrossRef]

Wang, H.-T.

Wang, J.

Wang, Q.

Wilcox, K. G.

A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. Hoogland, “Vertical-external-cavity semiconductor lasers,” J. Phys. D 37(9), R75–R85 (2004).
[CrossRef]

Zhang, H.

IEEE J. Sel. Top. Quantum Electron.

J. A. Piper and H. M. Pask, “Crystalline Raman lasers,” IEEE J. Sel. Top. Quantum Electron. 13(3), 692–704 (2007).
[CrossRef]

J. Cryst. Growth

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Phys. D

A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. Hoogland, “Vertical-external-cavity semiconductor lasers,” J. Phys. D 37(9), R75–R85 (2004).
[CrossRef]

Laser Photonics Rev.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).
[CrossRef]

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev. 3(5), 407–434 (2009).
[CrossRef]

Opt. Express

Opt. Lett.

Proc. SPIE

I. Friel, S. L. Geoghegan, D. J. Twitchen, and G. A. Scarsbrook, “Development of high quality single crystal diamond for novel laser applications,” Proc. SPIE 7838, 783819, 783819-8 (2010).
[CrossRef]

Other

V. Savitski, J. Hastie, M. Dawson, D. Burns, and A. Kemp, “Multi-watt Continuous-wave Diamond Raman Laser at 1217 nm,” in CLEO/Europe and EQEC 2011 Conference Digest, OSA Technical Digest (CD) (Optical Society of America, 2011), paper PDA_2.

V. Savitski, D. Burns, and A. Kemp, “Low-loss synthetic single-crystal diamond: Raman gain measurement and high power Raman laser at 1240 nm,” in CLEO/Europe and EQEC 2011 Conference Digest, OSA Technical Digest (CD) (Optical Society of America, 2011), paper CA12_2.

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Figures (4)

Fig. 1
Fig. 1

Schematic of the tunable diamond Raman laser pumped within an InGaAs SDL: HS, diamond heatspreader; HR, high reflectors; DM, dichroic mirror; OC, output coupler; and BRF, birefringent filter.

Fig. 2
Fig. 2

Power transfer characteristic of the cw diamond Raman laser (red circles) using a 1.2% OC. Also plotted is the SDL intracavity power (open squares) measured via the calibrated signal leakage through a cavity folding mirror. The inset shows the far-field Raman laser beam profile, with M2~1.1, measured using a commercial beam profiler (Coherent BeamMaster).

Fig. 3
Fig. 3

Tuning of the Raman laser via rotation of the intracavity BRF for an absorbed pump power of 9 W. The dashed line shows the variation in the output coupler transmission, as measured by the supplier.

Fig. 4
Fig. 4

Typical emission spectrum of the Raman laser, taken using an optical spectrum analyzer with 0.01 nm resolution. Inset: plotted on a log scale.

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