Abstract

Demand is increasing daily for large data storage systems that are useful for applications in spacecraft, space satellites, and space robots, which are all exposed to radiation-rich space environment. As candidates for use in space embedded systems, holographic storage systems are promising because they can easily provided the demanded large-storage capability. Particularly, holographic storage systems, which have no rotation mechanism, are demanded because they are virtually maintenance-free. Although a holographic memory itself is an extremely robust device even in a space radiation environment, its associated lasers and drive circuit devices are vulnerable. Such vulnerabilities sometimes engendered severe problems that prevent reading of all contents of the holographic memory, which is a turn-off failure mode of a laser array. This paper therefore presents a proposal for a recovery method for the turn-off failure mode of a laser array on a holographic storage system, and describes results of an experimental demonstration.

© 2011 OSA

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2011 (1)

H. Kuninaka and J. Kawaguchi, “Lessons learned from round trip of Hayabusa asteroid explorer in deep space,” IEEE Aerospace Conference, 1–8 (2011).

2010 (1)

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

2009 (1)

2007 (2)

Yan Lin and Lei He, “Device and architecture concurrent optimization for FPGA transient soft error rate,” International Conference on Computer-Aided Design, 194–198 (2007).
[CrossRef]

H. Horimai and X. Tan, “Holographic Information Storage System: Today and Future,” IEEE Trans. Magn. 43, 943–947 (2007).
[CrossRef]

2005 (1)

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

2003 (1)

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

2002 (1)

J. Hellmig, A. Mijiritskii, H. J. Borg, P. Vromans, and K. Musialkova, “Dual-layer Blu-ray Disc based on fast-growth phase-change materials,” International Symposium on Optical Memory and Optical Data Storage Topical Meeting, 407–409 (2002).
[CrossRef]

2001 (1)

M. Toishi, A. Okamoto, S. Honma, and M. Bunsen, “Fault-tolerant holographic memory with two photrefractive crystals,” Pacific Rim Conference on Lasers and Electro-Optics,  2, 160–161 (2001).

2000 (3)

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

S. S. Orlov, E. Bjornson, W. Phillips, Y. Takashima, X. Li, and L. Hesselink, “High transfer rate (1 Gbit/sec) high-capacity holographic disk digital data storage system,” Conference on Lasers and Electro-Optics, 190–191 (2000).

M. Radu, D. Pitica, and C. Posteuca, “Reliability and failure analysis of voting circuits in hardware redundant design,” International Symposium on Electronic Materials and Packaging, 421–423 (2000).

1999 (2)

E. Chuang, L. Wenhai, J. P. Drolet, and D. Psaltis, “Holographic random access memory (HRAM),” Proc. of the IEEE 87, 1931–1940 (1999).
[CrossRef]

H. J. Yoon, N. J. Chung, M. H. Choi, I. S. Park, and J. Jeong, “Estimation of system reliability for uncooled optical transmitters using system reliability function,” J. Lightwave Tech. 17, 1067–1071 (1999).
[CrossRef]

1998 (3)

J. W. Tomm, A. Barwolff, R. Puchert, A. Jaeger, C. Lienau, and T. Elsaesser, “Heating of high-power laser diode arrays: from temperature data to power management and failure mechanisms,” Conference on Lasers and Electro-Optics, 240–241 (1998).

F. B. McCormick, “Optical MEMS potentials in optical storage,” IEEE/LEOS Summer Topical Meetings, II/5–II/6 (1998).

M. Tsinberg and C. Eggers, “DVD technology,” International Conference on Image Processing,  1, 2 (1998).

1997 (2)

A. Pu and D. Psaltis, “Holographic data storage with 100 bits/μm2 density,” Optical Data Storage Topical Meeting Conference Digest, 48–49 (1997).
[CrossRef]

E. Chuang, J. J. Drolet, G. Barbastathis, and D. Psaltis, “Compact lens-less holographic memory,” Optical Data Storage Topical Meeting Conference Digest, 50–51 (1997).
[CrossRef]

1996 (1)

J. Hong, J. Ma, T. Chang, I. McMichael, W. Christian, and D. Pletcher, “Holographic memory for fast data access,” IEEE Lasers and Electro-Optics Society Annual Meeting,  1, 160–161 (1996).

1994 (2)

C. E. Stroud, “Reliability of Majority Voting Based VLSI Fault-Tolerant Circuits,” IEEE Trans. VLSI Syst. 2(4), 516–521 (1994).
[CrossRef]

P. J. Marchand and P. Ambs, “Developing a parallel-readout optical-disk system,” IEEE Micro 14, 20–27 (1994).
[CrossRef]

1993 (1)

E. G. PAEK, “Microlaser Arrays for Optical Information Processing,” Optics and Photonics News,  4, 16–23 (1993).
[CrossRef]

1963 (1)

Agnello, P.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Ambs, P.

P. J. Marchand and P. Ambs, “Developing a parallel-readout optical-disk system,” IEEE Micro 14, 20–27 (1994).
[CrossRef]

Arimitsu, T.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

Asai, H.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

Baguena, L.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Ball, D. R.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Barbastathis, G.

E. Chuang, J. J. Drolet, G. Barbastathis, and D. Psaltis, “Compact lens-less holographic memory,” Optical Data Storage Topical Meeting Conference Digest, 50–51 (1997).
[CrossRef]

Barth, J.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Barwolff, A.

J. W. Tomm, A. Barwolff, R. Puchert, A. Jaeger, C. Lienau, and T. Elsaesser, “Heating of high-power laser diode arrays: from temperature data to power management and failure mechanisms,” Conference on Lasers and Electro-Optics, 240–241 (1998).

Beeckman, G.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Bjornson, E.

S. S. Orlov, E. Bjornson, W. Phillips, Y. Takashima, X. Li, and L. Hesselink, “High transfer rate (1 Gbit/sec) high-capacity holographic disk digital data storage system,” Conference on Lasers and Electro-Optics, 190–191 (2000).

Black, D. A.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Black, J. D.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Blauberg, A.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Borg, H. J.

J. Hellmig, A. Mijiritskii, H. J. Borg, P. Vromans, and K. Musialkova, “Dual-layer Blu-ray Disc based on fast-growth phase-change materials,” International Symposium on Optical Memory and Optical Data Storage Topical Meeting, 407–409 (2002).
[CrossRef]

Bunsen, M.

M. Toishi, A. Okamoto, S. Honma, and M. Bunsen, “Fault-tolerant holographic memory with two photrefractive crystals,” Pacific Rim Conference on Lasers and Electro-Optics,  2, 160–161 (2001).

Burr, G. W.

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

Butt, N.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Cestero, A.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Chang, T.

J. Hong, J. Ma, T. Chang, I. McMichael, W. Christian, and D. Pletcher, “Holographic memory for fast data access,” IEEE Lasers and Electro-Optics Society Annual Meeting,  1, 160–161 (1996).

Choi, M. H.

H. J. Yoon, N. J. Chung, M. H. Choi, I. S. Park, and J. Jeong, “Estimation of system reliability for uncooled optical transmitters using system reliability function,” J. Lightwave Tech. 17, 1067–1071 (1999).
[CrossRef]

Christian, W.

J. Hong, J. Ma, T. Chang, I. McMichael, W. Christian, and D. Pletcher, “Holographic memory for fast data access,” IEEE Lasers and Electro-Optics Society Annual Meeting,  1, 160–161 (1996).

Chuang, E.

E. Chuang, L. Wenhai, J. P. Drolet, and D. Psaltis, “Holographic random access memory (HRAM),” Proc. of the IEEE 87, 1931–1940 (1999).
[CrossRef]

E. Chuang, J. J. Drolet, G. Barbastathis, and D. Psaltis, “Compact lens-less holographic memory,” Optical Data Storage Topical Meeting Conference Digest, 50–51 (1997).
[CrossRef]

Chudzik, M.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Chung, N. J.

H. J. Yoon, N. J. Chung, M. H. Choi, I. S. Park, and J. Jeong, “Estimation of system reliability for uncooled optical transmitters using system reliability function,” J. Lightwave Tech. 17, 1067–1071 (1999).
[CrossRef]

Coufal, H.

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

Coufal, H. J.

H. J. Coufal, D. Psaltis, and G. T. Sincerbox, “Holographic Data Storage,” Springer-Verlag, 7 (2000).

Davies, W.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Dodd, P. E.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Drolet, J. J.

E. Chuang, J. J. Drolet, G. Barbastathis, and D. Psaltis, “Compact lens-less holographic memory,” Optical Data Storage Topical Meeting Conference Digest, 50–51 (1997).
[CrossRef]

Drolet, J. P.

E. Chuang, L. Wenhai, J. P. Drolet, and D. Psaltis, “Holographic random access memory (HRAM),” Proc. of the IEEE 87, 1931–1940 (1999).
[CrossRef]

Eggers, C.

M. Tsinberg and C. Eggers, “DVD technology,” International Conference on Image Processing,  1, 2 (1998).

Elsaesser, T.

J. W. Tomm, A. Barwolff, R. Puchert, A. Jaeger, C. Lienau, and T. Elsaesser, “Heating of high-power laser diode arrays: from temperature data to power management and failure mechanisms,” Conference on Lasers and Electro-Optics, 240–241 (1998).

Ervin, J.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Fang, S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Fernandez-Leon, A.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Fleetwood, D. M.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Friendlich, M.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Galis, S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Glass, B.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Gollasch, C.

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

Goyal, P.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Gupta, S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Haddad, N. F.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Hawkins, K. V.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

He, Lei

Yan Lin and Lei He, “Device and architecture concurrent optimization for FPGA transient soft error rate,” International Conference on Computer-Aided Design, 194–198 (2007).
[CrossRef]

Hellmig, J.

J. Hellmig, A. Mijiritskii, H. J. Borg, P. Vromans, and K. Musialkova, “Dual-layer Blu-ray Disc based on fast-growth phase-change materials,” International Symposium on Optical Memory and Optical Data Storage Topical Meeting, 407–409 (2002).
[CrossRef]

Henson, W. K.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Hesselink, L.

S. S. Orlov, E. Bjornson, W. Phillips, Y. Takashima, X. Li, and L. Hesselink, “High transfer rate (1 Gbit/sec) high-capacity holographic disk digital data storage system,” Conference on Lasers and Electro-Optics, 190–191 (2000).

Ho, H.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Hoffnagle, J. A.

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

Hong, J.

J. Hong, J. Ma, T. Chang, I. McMichael, W. Christian, and D. Pletcher, “Holographic memory for fast data access,” IEEE Lasers and Electro-Optics Society Annual Meeting,  1, 160–161 (1996).

Honma, S.

M. Toishi, A. Okamoto, S. Honma, and M. Bunsen, “Fault-tolerant holographic memory with two photrefractive crystals,” Pacific Rim Conference on Lasers and Electro-Optics,  2, 160–161 (2001).

Horimai, H.

H. Horimai and X. Tan, “Holographic Information Storage System: Today and Future,” IEEE Trans. Magn. 43, 943–947 (2007).
[CrossRef]

Iide, Y.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

Iyer, S. S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Jaeger, A.

J. W. Tomm, A. Barwolff, R. Puchert, A. Jaeger, C. Lienau, and T. Elsaesser, “Heating of high-power laser diode arrays: from temperature data to power management and failure mechanisms,” Conference on Lasers and Electro-Optics, 240–241 (1998).

Jefferson, C. M.

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

Jeong, J.

H. J. Yoon, N. J. Chung, M. H. Choi, I. S. Park, and J. Jeong, “Estimation of system reliability for uncooled optical transmitters using system reliability function,” J. Lightwave Tech. 17, 1067–1071 (1999).
[CrossRef]

Johnson, J.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Jurich, M.

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

Kawaguchi, J.

H. Kuninaka and J. Kawaguchi, “Lessons learned from round trip of Hayabusa asteroid explorer in deep space,” IEEE Aerospace Conference, 1–8 (2011).

Khan, B.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Kim, H. S.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Kirihata, T.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Kong, W.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Krishnan, R.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Kuboyama, S.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

Kuninaka, H.

H. Kuninaka and J. Kawaguchi, “Lessons learned from round trip of Hayabusa asteroid explorer in deep space,” IEEE Aerospace Conference, 1–8 (2011).

Lee, S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Li, J. H.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Li, X.

S. S. Orlov, E. Bjornson, W. Phillips, Y. Takashima, X. Li, and L. Hesselink, “High transfer rate (1 Gbit/sec) high-capacity holographic disk digital data storage system,” Conference on Lasers and Electro-Optics, 190–191 (2000).

Li, Z.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Liegeon, E.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Lienau, C.

J. W. Tomm, A. Barwolff, R. Puchert, A. Jaeger, C. Lienau, and T. Elsaesser, “Heating of high-power laser diode arrays: from temperature data to power management and failure mechanisms,” Conference on Lasers and Electro-Optics, 240–241 (1998).

Lin, Yan

Yan Lin and Lei He, “Device and architecture concurrent optimization for FPGA transient soft error rate,” International Conference on Computer-Aided Design, 194–198 (2007).
[CrossRef]

Liu, J.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Ma, J.

J. Hong, J. Ma, T. Chang, I. McMichael, W. Christian, and D. Pletcher, “Holographic memory for fast data access,” IEEE Lasers and Electro-Optics Society Annual Meeting,  1, 160–161 (1996).

Macfarlane, R.

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

Maciejewski, E.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Makihara, A.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

Marchand, P. J.

P. J. Marchand and P. Ambs, “Developing a parallel-readout optical-disk system,” IEEE Micro 14, 20–27 (1994).
[CrossRef]

Marec, R.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Matsuda, S.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

McCormick, F. B.

F. B. McCormick, “Optical MEMS potentials in optical storage,” IEEE/LEOS Summer Topical Meetings, II/5–II/6 (1998).

McMichael, I.

J. Hong, J. Ma, T. Chang, I. McMichael, W. Christian, and D. Pletcher, “Holographic memory for fast data access,” IEEE Lasers and Electro-Optics Society Annual Meeting,  1, 160–161 (1996).

Mcstay, K.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Mijiritskii, A.

J. Hellmig, A. Mijiritskii, H. J. Borg, P. Vromans, and K. Musialkova, “Dual-layer Blu-ray Disc based on fast-growth phase-change materials,” International Symposium on Optical Memory and Optical Data Storage Topical Meeting, 407–409 (2002).
[CrossRef]

Musialkova, K.

J. Hellmig, A. Mijiritskii, H. J. Borg, P. Vromans, and K. Musialkova, “Dual-layer Blu-ray Disc based on fast-growth phase-change materials,” International Symposium on Optical Memory and Optical Data Storage Topical Meeting, 407–409 (2002).
[CrossRef]

Nakajima, M.

Narasimha, S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Okamoto, A.

M. Toishi, A. Okamoto, S. Honma, and M. Bunsen, “Fault-tolerant holographic memory with two photrefractive crystals,” Pacific Rim Conference on Lasers and Electro-Optics,  2, 160–161 (2001).

Orlov, S. S.

S. S. Orlov, E. Bjornson, W. Phillips, Y. Takashima, X. Li, and L. Hesselink, “High transfer rate (1 Gbit/sec) high-capacity holographic disk digital data storage system,” Conference on Lasers and Electro-Optics, 190–191 (2000).

PAEK, E. G.

E. G. PAEK, “Microlaser Arrays for Optical Information Processing,” Optics and Photonics News,  4, 16–23 (1993).
[CrossRef]

Park, I. S.

H. J. Yoon, N. J. Chung, M. H. Choi, I. S. Park, and J. Jeong, “Estimation of system reliability for uncooled optical transmitters using system reliability function,” J. Lightwave Tech. 17, 1067–1071 (1999).
[CrossRef]

Parries, P.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Phillips, W.

S. S. Orlov, E. Bjornson, W. Phillips, Y. Takashima, X. Li, and L. Hesselink, “High transfer rate (1 Gbit/sec) high-capacity holographic disk digital data storage system,” Conference on Lasers and Electro-Optics, 190–191 (2000).

Pitica, D.

M. Radu, D. Pitica, and C. Posteuca, “Reliability and failure analysis of voting circuits in hardware redundant design,” International Symposium on Electronic Materials and Packaging, 421–423 (2000).

Pletcher, D.

J. Hong, J. Ma, T. Chang, I. McMichael, W. Christian, and D. Pletcher, “Holographic memory for fast data access,” IEEE Lasers and Electro-Optics Society Annual Meeting,  1, 160–161 (1996).

Posteuca, C.

M. Radu, D. Pitica, and C. Posteuca, “Reliability and failure analysis of voting circuits in hardware redundant design,” International Symposium on Electronic Materials and Packaging, 421–423 (2000).

Psaltis, D.

E. Chuang, L. Wenhai, J. P. Drolet, and D. Psaltis, “Holographic random access memory (HRAM),” Proc. of the IEEE 87, 1931–1940 (1999).
[CrossRef]

A. Pu and D. Psaltis, “Holographic data storage with 100 bits/μm2 density,” Optical Data Storage Topical Meeting Conference Digest, 48–49 (1997).
[CrossRef]

E. Chuang, J. J. Drolet, G. Barbastathis, and D. Psaltis, “Compact lens-less holographic memory,” Optical Data Storage Topical Meeting Conference Digest, 50–51 (1997).
[CrossRef]

H. J. Coufal, D. Psaltis, and G. T. Sincerbox, “Holographic Data Storage,” Springer-Verlag, 7 (2000).

Pu, A.

A. Pu and D. Psaltis, “Holographic data storage with 100 bits/μm2 density,” Optical Data Storage Topical Meeting Conference Digest, 48–49 (1997).
[CrossRef]

Puchert, R.

J. W. Tomm, A. Barwolff, R. Puchert, A. Jaeger, C. Lienau, and T. Elsaesser, “Heating of high-power laser diode arrays: from temperature data to power management and failure mechanisms,” Conference on Lasers and Electro-Optics, 240–241 (1998).

Radu, M.

M. Radu, D. Pitica, and C. Posteuca, “Reliability and failure analysis of voting circuits in hardware redundant design,” International Symposium on Electronic Materials and Packaging, 421–423 (2000).

Redant, S.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Reed, R. A.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Ribeiro, P.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Robinson, W. H.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Robson, N.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Rombawa, S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Rosenblatt, S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Sakaide, Y.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

Schrimpf, R. D.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Shelby, R. M.

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

Shindou, H.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

Sincerbox, G. T.

H. J. Coufal, D. Psaltis, and G. T. Sincerbox, “Holographic Data Storage,” Springer-Verlag, 7 (2000).

Soucarre, J.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Stiffler, S.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Stroud, C. E.

C. E. Stroud, “Reliability of Majority Voting Based VLSI Fault-Tolerant Circuits,” IEEE Trans. VLSI Syst. 2(4), 516–521 (1994).
[CrossRef]

Takalkar, R.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Takashima, Y.

S. S. Orlov, E. Bjornson, W. Phillips, Y. Takashima, X. Li, and L. Hesselink, “High transfer rate (1 Gbit/sec) high-capacity holographic disk digital data storage system,” Conference on Lasers and Electro-Optics, 190–191 (2000).

Tan, X.

H. Horimai and X. Tan, “Holographic Information Storage System: Today and Future,” IEEE Trans. Magn. 43, 943–947 (2007).
[CrossRef]

Tessier, A.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Tipton, A. D.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Toishi, M.

M. Toishi, A. Okamoto, S. Honma, and M. Bunsen, “Fault-tolerant holographic memory with two photrefractive crystals,” Pacific Rim Conference on Lasers and Electro-Optics,  2, 160–161 (2001).

Tomm, J. W.

J. W. Tomm, A. Barwolff, R. Puchert, A. Jaeger, C. Lienau, and T. Elsaesser, “Heating of high-power laser diode arrays: from temperature data to power management and failure mechanisms,” Conference on Lasers and Electro-Optics, 240–241 (1998).

Tsinberg, M.

M. Tsinberg and C. Eggers, “DVD technology,” International Conference on Image Processing,  1, 2 (1998).

Tsuchiya, Y.

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

van Heerden, P. J.

Van Thielen, B.

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

Vromans, P.

J. Hellmig, A. Mijiritskii, H. J. Borg, P. Vromans, and K. Musialkova, “Dual-layer Blu-ray Disc based on fast-growth phase-change materials,” International Symposium on Optical Memory and Optical Data Storage Topical Meeting, 407–409 (2002).
[CrossRef]

Warren, K. M.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Watanabe, M.

Weaver, T.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Wenhai, L.

E. Chuang, L. Wenhai, J. P. Drolet, and D. Psaltis, “Holographic random access memory (HRAM),” Proc. of the IEEE 87, 1931–1940 (1999).
[CrossRef]

Xapsos, M. A.

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

Yin, M.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Yoon, H. J.

H. J. Yoon, N. J. Chung, M. H. Choi, I. S. Park, and J. Jeong, “Estimation of system reliability for uncooled optical transmitters using system reliability function,” J. Lightwave Tech. 17, 1067–1071 (1999).
[CrossRef]

Zhang, Y.

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

Appl. Opt. (1)

Conference on Lasers and Electro-Optics (3)

J. W. Tomm, A. Barwolff, R. Puchert, A. Jaeger, C. Lienau, and T. Elsaesser, “Heating of high-power laser diode arrays: from temperature data to power management and failure mechanisms,” Conference on Lasers and Electro-Optics, 240–241 (1998).

G. W. Burr, C. M. Jefferson, H. Coufal, C. Gollasch, M. Jurich, J. A. Hoffnagle, R. Macfarlane, and R. M. Shelby, “Volume holographic data storage at an areal density of 100 Gbit/in2,” Conference on Lasers and Electro-Optics, 188–189 (2000).

S. S. Orlov, E. Bjornson, W. Phillips, Y. Takashima, X. Li, and L. Hesselink, “High transfer rate (1 Gbit/sec) high-capacity holographic disk digital data storage system,” Conference on Lasers and Electro-Optics, 190–191 (2000).

IEEE Aerospace Conference (1)

H. Kuninaka and J. Kawaguchi, “Lessons learned from round trip of Hayabusa asteroid explorer in deep space,” IEEE Aerospace Conference, 1–8 (2011).

IEEE International Electron Devices Meeting (1)

N. Butt, K. Mcstay, A. Cestero, H. Ho, W. Kong, S. Fang, R. Krishnan, B. Khan, A. Tessier, W. Davies, S. Lee, Y. Zhang, J. Johnson, S. Rombawa, R. Takalkar, A. Blauberg, K. V. Hawkins, J. Liu, S. Rosenblatt, P. Goyal, S. Gupta, J. Ervin, Z. Li, S. Galis, J. Barth, M. Yin, T. Weaver, J. H. Li, S. Narasimha, P. Parries, W. K. Henson, N. Robson, T. Kirihata, M. Chudzik, E. Maciejewski, P. Agnello, S. Stiffler, and S. S. Iyer, “A 0.039 μm2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEEE International Electron Devices Meeting, 27.5.1 – 27.5.4 (2010).

IEEE Lasers and Electro-Optics Society Annual Meeting (1)

J. Hong, J. Ma, T. Chang, I. McMichael, W. Christian, and D. Pletcher, “Holographic memory for fast data access,” IEEE Lasers and Electro-Optics Society Annual Meeting,  1, 160–161 (1996).

IEEE Micro (1)

P. J. Marchand and P. Ambs, “Developing a parallel-readout optical-disk system,” IEEE Micro 14, 20–27 (1994).
[CrossRef]

IEEE Trans. Magn. (1)

H. Horimai and X. Tan, “Holographic Information Storage System: Today and Future,” IEEE Trans. Magn. 43, 943–947 (2007).
[CrossRef]

IEEE Trans. Nucl. Sci. (2)

S. Redant, R. Marec, L. Baguena, E. Liegeon, J. Soucarre, B. Van Thielen, G. Beeckman, P. Ribeiro, A. Fernandez-Leon, and B. Glass, “Radiation Test Results on First Silicon in the Design Against Radiation Effects (DARE) Library,” IEEE Trans. Nucl. Sci. 52(5), 1550–1554 (2005).
[CrossRef]

A. Makihara, Y. Sakaide, Y. Tsuchiya, T. Arimitsu, H. Asai, Y. Iide, H. Shindou, S. Kuboyama, and S. Matsuda, “Single-Event Effects in 0.18 um CMOS Commercial Processes,” IEEE Trans. Nucl. Sci. 50(6), 2135–2138 (2003).
[CrossRef]

IEEE Trans. VLSI Syst. (1)

C. E. Stroud, “Reliability of Majority Voting Based VLSI Fault-Tolerant Circuits,” IEEE Trans. VLSI Syst. 2(4), 516–521 (1994).
[CrossRef]

IEEE/LEOS Summer Topical Meetings (1)

F. B. McCormick, “Optical MEMS potentials in optical storage,” IEEE/LEOS Summer Topical Meetings, II/5–II/6 (1998).

International Conference on Computer-Aided Design (1)

Yan Lin and Lei He, “Device and architecture concurrent optimization for FPGA transient soft error rate,” International Conference on Computer-Aided Design, 194–198 (2007).
[CrossRef]

International Conference on Image Processing (1)

M. Tsinberg and C. Eggers, “DVD technology,” International Conference on Image Processing,  1, 2 (1998).

International Symposium on Electronic Materials and Packaging (1)

M. Radu, D. Pitica, and C. Posteuca, “Reliability and failure analysis of voting circuits in hardware redundant design,” International Symposium on Electronic Materials and Packaging, 421–423 (2000).

International Symposium on Optical Memory and Optical Data Storage Topical Meeting (1)

J. Hellmig, A. Mijiritskii, H. J. Borg, P. Vromans, and K. Musialkova, “Dual-layer Blu-ray Disc based on fast-growth phase-change materials,” International Symposium on Optical Memory and Optical Data Storage Topical Meeting, 407–409 (2002).
[CrossRef]

J. Lightwave Tech. (1)

H. J. Yoon, N. J. Chung, M. H. Choi, I. S. Park, and J. Jeong, “Estimation of system reliability for uncooled optical transmitters using system reliability function,” J. Lightwave Tech. 17, 1067–1071 (1999).
[CrossRef]

Opt. Lett. (1)

Optical Data Storage Topical Meeting Conference Digest (2)

A. Pu and D. Psaltis, “Holographic data storage with 100 bits/μm2 density,” Optical Data Storage Topical Meeting Conference Digest, 48–49 (1997).
[CrossRef]

E. Chuang, J. J. Drolet, G. Barbastathis, and D. Psaltis, “Compact lens-less holographic memory,” Optical Data Storage Topical Meeting Conference Digest, 50–51 (1997).
[CrossRef]

Optics and Photonics News (1)

E. G. PAEK, “Microlaser Arrays for Optical Information Processing,” Optics and Photonics News,  4, 16–23 (1993).
[CrossRef]

Pacific Rim Conference on Lasers and Electro-Optics (1)

M. Toishi, A. Okamoto, S. Honma, and M. Bunsen, “Fault-tolerant holographic memory with two photrefractive crystals,” Pacific Rim Conference on Lasers and Electro-Optics,  2, 160–161 (2001).

Proc. of the IEEE (1)

E. Chuang, L. Wenhai, J. P. Drolet, and D. Psaltis, “Holographic random access memory (HRAM),” Proc. of the IEEE 87, 1931–1940 (1999).
[CrossRef]

Other (2)

H. J. Coufal, D. Psaltis, and G. T. Sincerbox, “Holographic Data Storage,” Springer-Verlag, 7 (2000).

J. D. Black, D. R. Ball, W. H. Robinson, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, D. A. Black, K. M. Warren, A. D. Tipton, P. E. Dodd, N. F. Haddad, M. A. Xapsos, H. S. Kim, and M. Friendlich, “Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection,” IEEE Trans. Nucl. Sci.55, 2943–2947 (2008).
[CrossRef]

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Figures (9)

Fig. 1
Fig. 1

Block diagram of a robust holographic storage system for triple module redundancy.

Fig. 2
Fig. 2

Circuit diagram of a laser driver circuit.

Fig. 3
Fig. 3

Block diagram of an experimental system of a holographic storage system including 16 pages, each having 340 bits.

Fig. 4
Fig. 4

Photograph of the experimental system.

Fig. 5
Fig. 5

Hologram pattern including 16 contents, each of which includes 340 bits.

Fig. 6
Fig. 6

Photograph of a laser array.

Fig. 7
Fig. 7

Two page data.

Fig. 8
Fig. 8

First recovery procedure on a laser array. Panel (a) shows normal operation by which a single laser of No. 1 turns on. Panel (b) shows an abnormal case in which No. 2 laser is turned on constantly as a turn-off failure in addition to the No. 1 laser. Panels (c), (d), and (e) present a recovery procedure by turning the other recovery lasers on.

Fig. 9
Fig. 9

Second recovery procedure on the laser array. Panel (a) shows normal operation by which a single laser of No. 2 turns on as well as the first recovery procedure. Panel (b) shows an abnormal case in which No. 6 laser turns on constantly as a turn-off failure in addition to the No. 6 laser. Panels (c), (d), and (e) present a recovery procedure that is executed by turning the other recovery lasers on.

Tables (2)

Tables Icon

Table 1 Power of laser diodes corresponding to situations (a), (b), (c), (d), and (e) shown in Fig. 8.

Tables Icon

Table 2 Power of laser diodes corresponding to situations (a), (b), (c), (d), and (e) shown in Fig. 9.

Equations (3)

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N I typ / I t h + N spare .
H ( x 1 , y 1 ) O ( x 2 , y 2 ) sin ( k r ) d x 2 d y 2 , r = Z L 2 + ( x 1 x 2 ) 2 + ( y 1 y 2 ) 2 + Z Laser 2 + ( x Laser x 1 ) 2 + ( y Laser y 1 ) 2 .
H ( x 1 , y 1 ) = H ( x 1 , y 1 ) H min H max H min .

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