Abstract

Measurement of the Henry factor over large optical bandwidth is carried out in a single step without any filtering, using a technique based on the sinusoidal phase modulation method. This fast technique was successfully applied to a directly modulated Fabry Perot laser to obtain simultaneously the linewidth enhancement factor (LEF) of 14 longitudinal modes. It is also well suited for electro-absorption modulators (EAM) for which the α-factor is determined over 15 nm optical bandwidth. A very good agreement is found with the well established fiber transfer function method.

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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2010 (1)

2009 (2)

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

A. Villafranca, A. Villafranca, G. Giuliani, and I. Garces, “Mode-resolved measurements of the linewidth enhancement factor of a Fabry–Pérot laser,” IEEE Photon. Technol. Lett. 21(17), 1256–1258 (2009).
[CrossRef]

2007 (2)

I. Kang and C. Dorrer, “Method of optical pulse characterization using sinusoidal optical phase modulations,” Opt. Lett. 32(17), 2538–2540 (2007).
[CrossRef] [PubMed]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

2006 (3)

2004 (2)

P. Kockaert, M. Haelterman, P. Emplit, and C. Froehly, “Complete characterization of (ultra)short optical pulses using fast linear detectors,” IEEE J. Sel. Top. Quantum Electron. 10(1), 206–212 (2004).
[CrossRef]

Y. Yu, G. Giuliani, and S. Donati, “Measurement of the linewidth enhancement factor of semiconductor lasers based on the optical feedback self-mixing effect,” IEEE Photon. Technol. Lett. 16(4), 990–992 (2004).
[CrossRef]

2002 (1)

2001 (1)

G. Liu, X. Jin, and S. L. Chuang, “Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique,” IEEE Photon. Technol. Lett. 13(5), 430–432 (2001).
[CrossRef]

2000 (1)

M. Kwakernaak, R. Schreieck, A. Neiger, H. Jäckel, E. Gini, and W. Vogt, “Spectral phase measurement of mode-locked diode laser pulses by beating sidebands generated by electrooptical mixing,” IEEE Photon. Technol. Lett. 12(12), 1677–1679 (2000).
[CrossRef]

1998 (1)

1997 (1)

D. Delprat, A. Ramdane, A. Ougazzaden, H. Nakajima, and M. Carré, “Integrated multiquantum well distributed feedback laser-electroabsorption modulator with a negative chirp for zero bias voltage,” Electron. Lett. 33(1), 53–54 (1997).
[CrossRef]

1995 (1)

R. C. Srinivasan and J. C. Cartledge, “On using fiber transfer functions to characterize laser chirp and fiber dispersion,” IEEE Photon. Technol. Lett. 7(11), 1327–1329 (1995).
[CrossRef]

1993 (1)

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[CrossRef]

1988 (1)

N. Schunk and K. Petermann, “Numerical analysis of the feedback regimes for a single-mode semiconductor laser with external feedback,” IEEE J. Quantum Electron. 24(7), 1242–1247 (1988).
[CrossRef]

1986 (1)

R. Schimpe, J. E. Bowers, and T. L. Koch, “Characterization of frequency response of 1.5 µm InGaAsP DFB laser diode and InGaAs pin photodiode by heterodyne measurement technique,” Electron. Lett. 22(9), 453–454 (1986).
[CrossRef]

1983 (1)

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor ? of semiconductor lasers,” Appl. Phys. Lett. 42(4), 328–330 (1983).
[CrossRef]

1982 (1)

C. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[CrossRef]

Accard, A.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Akrout, A.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Aubin, G.

Barry, L. P.

Begishev, I. A.

Blache, F.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Boittin, R.

Bowers, J. E.

R. Schimpe, J. E. Bowers, and T. L. Koch, “Characterization of frequency response of 1.5 µm InGaAsP DFB laser diode and InGaAs pin photodiode by heterodyne measurement technique,” Electron. Lett. 22(9), 453–454 (1986).
[CrossRef]

Brenot, R.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Bromage, J.

Carré, M.

D. Delprat, A. Ramdane, A. Ougazzaden, H. Nakajima, and M. Carré, “Integrated multiquantum well distributed feedback laser-electroabsorption modulator with a negative chirp for zero bias voltage,” Electron. Lett. 33(1), 53–54 (1997).
[CrossRef]

Cartledge, J. C.

R. C. Srinivasan and J. C. Cartledge, “On using fiber transfer functions to characterize laser chirp and fiber dispersion,” IEEE Photon. Technol. Lett. 7(11), 1327–1329 (1995).
[CrossRef]

Chuang, S. L.

G. Liu, X. Jin, and S. L. Chuang, “Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique,” IEEE Photon. Technol. Lett. 13(5), 430–432 (2001).
[CrossRef]

Dagens, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Debeau, J.

Delprat, D.

D. Delprat, A. Ramdane, A. Ougazzaden, H. Nakajima, and M. Carré, “Integrated multiquantum well distributed feedback laser-electroabsorption modulator with a negative chirp for zero bias voltage,” Electron. Lett. 33(1), 53–54 (1997).
[CrossRef]

Derouin, E.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Devaux, F.

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[CrossRef]

Donati, S.

Y. Yu, G. Giuliani, and S. Donati, “Measurement of the linewidth enhancement factor of semiconductor lasers based on the optical feedback self-mixing effect,” IEEE Photon. Technol. Lett. 16(4), 990–992 (2004).
[CrossRef]

Dorrer, C.

Drisse, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Duan, G.-H.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

C. Gosset, J. Renaudier, G.-H. Duan, G. Aubin, and J.-L. Oudar, “Phase and amplitude characterization of a 40-GHz self-pulsating DBR laser based on autocorrelation analysis,” J. Lightwave Technol. 24(2), 970–975 (2006).
[CrossRef]

Emplit, P.

P. Kockaert, M. Haelterman, P. Emplit, and C. Froehly, “Complete characterization of (ultra)short optical pulses using fast linear detectors,” IEEE J. Sel. Top. Quantum Electron. 10(1), 206–212 (2004).
[CrossRef]

Froehly, C.

P. Kockaert, M. Haelterman, P. Emplit, and C. Froehly, “Complete characterization of (ultra)short optical pulses using fast linear detectors,” IEEE J. Sel. Top. Quantum Electron. 10(1), 206–212 (2004).
[CrossRef]

Garces, I.

A. Villafranca, A. Villafranca, G. Giuliani, and I. Garces, “Mode-resolved measurements of the linewidth enhancement factor of a Fabry–Pérot laser,” IEEE Photon. Technol. Lett. 21(17), 1256–1258 (2009).
[CrossRef]

Gariah, H.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Gini, E.

M. Kwakernaak, R. Schreieck, A. Neiger, H. Jäckel, E. Gini, and W. Vogt, “Spectral phase measurement of mode-locked diode laser pulses by beating sidebands generated by electrooptical mixing,” IEEE Photon. Technol. Lett. 12(12), 1677–1679 (2000).
[CrossRef]

Giuliani, G.

A. Villafranca, A. Villafranca, G. Giuliani, and I. Garces, “Mode-resolved measurements of the linewidth enhancement factor of a Fabry–Pérot laser,” IEEE Photon. Technol. Lett. 21(17), 1256–1258 (2009).
[CrossRef]

Y. Yu, G. Giuliani, and S. Donati, “Measurement of the linewidth enhancement factor of semiconductor lasers based on the optical feedback self-mixing effect,” IEEE Photon. Technol. Lett. 16(4), 990–992 (2004).
[CrossRef]

Gosset, C.

Haelterman, M.

P. Kockaert, M. Haelterman, P. Emplit, and C. Froehly, “Complete characterization of (ultra)short optical pulses using fast linear detectors,” IEEE J. Sel. Top. Quantum Electron. 10(1), 206–212 (2004).
[CrossRef]

Harder, C.

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor ? of semiconductor lasers,” Appl. Phys. Lett. 42(4), 328–330 (1983).
[CrossRef]

Henry, C.

C. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[CrossRef]

Jäckel, H.

M. Kwakernaak, R. Schreieck, A. Neiger, H. Jäckel, E. Gini, and W. Vogt, “Spectral phase measurement of mode-locked diode laser pulses by beating sidebands generated by electrooptical mixing,” IEEE Photon. Technol. Lett. 12(12), 1677–1679 (2000).
[CrossRef]

Jin, X.

G. Liu, X. Jin, and S. L. Chuang, “Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique,” IEEE Photon. Technol. Lett. 13(5), 430–432 (2001).
[CrossRef]

Kang, I.

Kerdiles, J. F.

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[CrossRef]

Koch, T. L.

R. Schimpe, J. E. Bowers, and T. L. Koch, “Characterization of frequency response of 1.5 µm InGaAsP DFB laser diode and InGaAs pin photodiode by heterodyne measurement technique,” Electron. Lett. 22(9), 453–454 (1986).
[CrossRef]

Kockaert, P.

P. Kockaert, M. Haelterman, P. Emplit, and C. Froehly, “Complete characterization of (ultra)short optical pulses using fast linear detectors,” IEEE J. Sel. Top. Quantum Electron. 10(1), 206–212 (2004).
[CrossRef]

Kowalski, B.

Kwakernaak, M.

M. Kwakernaak, R. Schreieck, A. Neiger, H. Jäckel, E. Gini, and W. Vogt, “Spectral phase measurement of mode-locked diode laser pulses by beating sidebands generated by electrooptical mixing,” IEEE Photon. Technol. Lett. 12(12), 1677–1679 (2000).
[CrossRef]

Landreau, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Le Gouezigou, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

LeGouezigou, O.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Lelarge, F.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Liu, G.

G. Liu, X. Jin, and S. L. Chuang, “Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique,” IEEE Photon. Technol. Lett. 13(5), 430–432 (2001).
[CrossRef]

Make, D.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Mallecot, F.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Martinez, A.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Merghem, K.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Murdoch, S. G.

Nakajima, H.

D. Delprat, A. Ramdane, A. Ougazzaden, H. Nakajima, and M. Carré, “Integrated multiquantum well distributed feedback laser-electroabsorption modulator with a negative chirp for zero bias voltage,” Electron. Lett. 33(1), 53–54 (1997).
[CrossRef]

Neiger, A.

M. Kwakernaak, R. Schreieck, A. Neiger, H. Jäckel, E. Gini, and W. Vogt, “Spectral phase measurement of mode-locked diode laser pulses by beating sidebands generated by electrooptical mixing,” IEEE Photon. Technol. Lett. 12(12), 1677–1679 (2000).
[CrossRef]

Oudar, J.-L.

Ougazzaden, A.

D. Delprat, A. Ramdane, A. Ougazzaden, H. Nakajima, and M. Carré, “Integrated multiquantum well distributed feedback laser-electroabsorption modulator with a negative chirp for zero bias voltage,” Electron. Lett. 33(1), 53–54 (1997).
[CrossRef]

Ozeki, Y.

Y. Ozeki, S. Takasaka, and M. Sakano, “Electrooptic spectral shearing interferometry using a Mach-Zehnder modulator with a bias voltage sweeper,” IEEE Photon. Technol. Lett. 18(8), 911–913 (2006).
[CrossRef]

Petermann, K.

N. Schunk and K. Petermann, “Numerical analysis of the feedback regimes for a single-mode semiconductor laser with external feedback,” IEEE J. Quantum Electron. 24(7), 1242–1247 (1988).
[CrossRef]

Poingt, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Pommereau, F.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Provost, J.-G.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Ramdane, A.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

D. Delprat, A. Ramdane, A. Ougazzaden, H. Nakajima, and M. Carré, “Integrated multiquantum well distributed feedback laser-electroabsorption modulator with a negative chirp for zero bias voltage,” Electron. Lett. 33(1), 53–54 (1997).
[CrossRef]

Reid, D. A.

Renaudier, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

C. Gosset, J. Renaudier, G.-H. Duan, G. Aubin, and J.-L. Oudar, “Phase and amplitude characterization of a 40-GHz self-pulsating DBR laser based on autocorrelation analysis,” J. Lightwave Technol. 24(2), 970–975 (2006).
[CrossRef]

Rousseau, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Sakano, M.

Y. Ozeki, S. Takasaka, and M. Sakano, “Electrooptic spectral shearing interferometry using a Mach-Zehnder modulator with a bias voltage sweeper,” IEEE Photon. Technol. Lett. 18(8), 911–913 (2006).
[CrossRef]

Schimpe, R.

R. Schimpe, J. E. Bowers, and T. L. Koch, “Characterization of frequency response of 1.5 µm InGaAsP DFB laser diode and InGaAs pin photodiode by heterodyne measurement technique,” Electron. Lett. 22(9), 453–454 (1986).
[CrossRef]

Schreieck, R.

M. Kwakernaak, R. Schreieck, A. Neiger, H. Jäckel, E. Gini, and W. Vogt, “Spectral phase measurement of mode-locked diode laser pulses by beating sidebands generated by electrooptical mixing,” IEEE Photon. Technol. Lett. 12(12), 1677–1679 (2000).
[CrossRef]

Schunk, N.

N. Schunk and K. Petermann, “Numerical analysis of the feedback regimes for a single-mode semiconductor laser with external feedback,” IEEE J. Quantum Electron. 24(7), 1242–1247 (1988).
[CrossRef]

Shen, A.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Sorel, Y.

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[CrossRef]

Srinivasan, R. C.

R. C. Srinivasan and J. C. Cartledge, “On using fiber transfer functions to characterize laser chirp and fiber dispersion,” IEEE Photon. Technol. Lett. 7(11), 1327–1329 (1995).
[CrossRef]

Takasaka, S.

Y. Ozeki, S. Takasaka, and M. Sakano, “Electrooptic spectral shearing interferometry using a Mach-Zehnder modulator with a bias voltage sweeper,” IEEE Photon. Technol. Lett. 18(8), 911–913 (2006).
[CrossRef]

Usechak, N. G.

Vahala, K.

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor ? of semiconductor lasers,” Appl. Phys. Lett. 42(4), 328–330 (1983).
[CrossRef]

Van Dijk, F.

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Villafranca, A.

A. Villafranca, A. Villafranca, G. Giuliani, and I. Garces, “Mode-resolved measurements of the linewidth enhancement factor of a Fabry–Pérot laser,” IEEE Photon. Technol. Lett. 21(17), 1256–1258 (2009).
[CrossRef]

A. Villafranca, A. Villafranca, G. Giuliani, and I. Garces, “Mode-resolved measurements of the linewidth enhancement factor of a Fabry–Pérot laser,” IEEE Photon. Technol. Lett. 21(17), 1256–1258 (2009).
[CrossRef]

Vogt, W.

M. Kwakernaak, R. Schreieck, A. Neiger, H. Jäckel, E. Gini, and W. Vogt, “Spectral phase measurement of mode-locked diode laser pulses by beating sidebands generated by electrooptical mixing,” IEEE Photon. Technol. Lett. 12(12), 1677–1679 (2000).
[CrossRef]

Yariv, A.

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor ? of semiconductor lasers,” Appl. Phys. Lett. 42(4), 328–330 (1983).
[CrossRef]

Yu, Y.

Y. Yu, G. Giuliani, and S. Donati, “Measurement of the linewidth enhancement factor of semiconductor lasers based on the optical feedback self-mixing effect,” IEEE Photon. Technol. Lett. 16(4), 990–992 (2004).
[CrossRef]

Zuegel, J. D.

Appl. Phys. Lett. (1)

C. Harder, K. Vahala, and A. Yariv, “Measurement of the linewidth enhancement factor ? of semiconductor lasers,” Appl. Phys. Lett. 42(4), 328–330 (1983).
[CrossRef]

Bell Labs Tech. J. (1)

G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. LeGouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, and A. Ramdane, “High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications,” Bell Labs Tech. J. 14(3), 63–84 (2009).
[CrossRef]

Electron. Lett. (2)

D. Delprat, A. Ramdane, A. Ougazzaden, H. Nakajima, and M. Carré, “Integrated multiquantum well distributed feedback laser-electroabsorption modulator with a negative chirp for zero bias voltage,” Electron. Lett. 33(1), 53–54 (1997).
[CrossRef]

R. Schimpe, J. E. Bowers, and T. L. Koch, “Characterization of frequency response of 1.5 µm InGaAsP DFB laser diode and InGaAs pin photodiode by heterodyne measurement technique,” Electron. Lett. 22(9), 453–454 (1986).
[CrossRef]

IEEE J. Quantum Electron. (2)

C. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron. 18(2), 259–264 (1982).
[CrossRef]

N. Schunk and K. Petermann, “Numerical analysis of the feedback regimes for a single-mode semiconductor laser with external feedback,” IEEE J. Quantum Electron. 24(7), 1242–1247 (1988).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

P. Kockaert, M. Haelterman, P. Emplit, and C. Froehly, “Complete characterization of (ultra)short optical pulses using fast linear detectors,” IEEE J. Sel. Top. Quantum Electron. 10(1), 206–212 (2004).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. van Dijk, D. Make, O. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, and G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 ?m,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

IEEE Photon. Technol. Lett. (6)

Y. Ozeki, S. Takasaka, and M. Sakano, “Electrooptic spectral shearing interferometry using a Mach-Zehnder modulator with a bias voltage sweeper,” IEEE Photon. Technol. Lett. 18(8), 911–913 (2006).
[CrossRef]

M. Kwakernaak, R. Schreieck, A. Neiger, H. Jäckel, E. Gini, and W. Vogt, “Spectral phase measurement of mode-locked diode laser pulses by beating sidebands generated by electrooptical mixing,” IEEE Photon. Technol. Lett. 12(12), 1677–1679 (2000).
[CrossRef]

A. Villafranca, A. Villafranca, G. Giuliani, and I. Garces, “Mode-resolved measurements of the linewidth enhancement factor of a Fabry–Pérot laser,” IEEE Photon. Technol. Lett. 21(17), 1256–1258 (2009).
[CrossRef]

G. Liu, X. Jin, and S. L. Chuang, “Measurement of linewidth enhancement factor of semiconductor lasers using an injection-locking technique,” IEEE Photon. Technol. Lett. 13(5), 430–432 (2001).
[CrossRef]

Y. Yu, G. Giuliani, and S. Donati, “Measurement of the linewidth enhancement factor of semiconductor lasers based on the optical feedback self-mixing effect,” IEEE Photon. Technol. Lett. 16(4), 990–992 (2004).
[CrossRef]

R. C. Srinivasan and J. C. Cartledge, “On using fiber transfer functions to characterize laser chirp and fiber dispersion,” IEEE Photon. Technol. Lett. 7(11), 1327–1329 (1995).
[CrossRef]

J. Lightwave Technol. (2)

F. Devaux, Y. Sorel, and J. F. Kerdiles, “Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter,” J. Lightwave Technol. 11(12), 1937–1940 (1993).
[CrossRef]

C. Gosset, J. Renaudier, G.-H. Duan, G. Aubin, and J.-L. Oudar, “Phase and amplitude characterization of a 40-GHz self-pulsating DBR laser based on autocorrelation analysis,” J. Lightwave Technol. 24(2), 970–975 (2006).
[CrossRef]

Opt. Express (1)

Opt. Lett. (4)

Other (2)

B. Riou, N. Trenado, F. Grillot, F. Mallecot, V. Colson, M. F. Martineau, B. Thédrez, L. Silvestre, D. Meichenin, K. Merghem, and A. Ramdane, “High Performance Strained-Layer InGaAsP/InP Laser With Low Linewidth Enhancement Factor Over 30 nm,” Proceedings of European Conference on Optical Communication (ECOC) 2003, paper We4.P.85, Rimini, Italy, (2003).

J.-G. Provost, C. Kazmierski, F. Blache, and J. Decobert, “High Extinction Ratio Picosecond Pulses at 40 GHz Rate over 40 nm with an AlGaInAs EAM Characterises by a Spectrogram Acquisition Method,” Proceedings of European Conference on Optical Communication (ECOC) 2005, paper Tu1.5.5 (2005)

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Figures (6)

Fig. 1
Fig. 1

Schematics of the experimental set-up based on sinusoidal optical phase modulation technique to measure the phase-amplitude coupling factor. EOS: External Optical Source, DUT: Device Under Test, ODL: Optical Delay Line, PM: Phase Modulator, OSA Optical Spectrum Analyzer, BT: Bias Tee, RFPS: RF Power Splitter

Fig. 2
Fig. 2

Measurement of the αH of each longitudinal modes of a FP laser. The inset shows the emission spectrum in a linear scale.

Fig. 3
Fig. 3

Example of the measured optical spectra, i.e. one longitudinal mode and the modulation sidebands, obtained for 4 different optical delays. The spectra were normalized to the main lobes.

Fig. 4
Fig. 4

Simultaneous measurement of the αH of an EAM over 15 nm optical bandwidth for two different voltages.

Fig. 5
Fig. 5

Comparison of the fiber transfer function method and our proposed technique for the measurement of α H of an EAM.

Fig. 6
Fig. 6

Determination of the EAM Henry factor versus the amplitude of the phase modulation ψ (bias voltage −2.2 V).

Equations (11)

Equations on this page are rendered with MathJax. Learn more.

{ A 1 = I 0 m ( 1+j α H ) 4 A 0 = I 0 A +1 = I 0 m ( 1+j α H ) 4
2β m = α H
α H = Im( A ±1 ) / Re ( A ±1 )
E(t)= A 1 expj{ Ωt ω m t }+ A 0 expj{ Ωt }+ A +1 expj{ Ωt+ ω m t }
S(t)=E( t k 4 f m )exp( jφ(t) ) where φ(t)=ψcos( ω m t+ ϕ 0 )
S ˜ k ( Ω ω m )=[ A 1 J 0 (ψ)exp(jk π 2 )+j A 0 J 1 (ψ)exp( j ϕ 0 ) ]exp( j Ω ω m kπ 2 )
I 1 k = | A 1 | 2 J 0 ( ψ ) 2 + A 0 2 J 1 ( ψ ) 2 +2 A 0 J 0 ( ψ ) J 1 ( ψ )Im[ A 1 expj( kπ 2 + ϕ 0 ) ]
I +1 k = | A +1 | 2 J 0 ( ψ ) 2 + A 0 2 J 1 ( ψ ) 2 +2 A 0 J 0 ( ψ ) J 1 ( ψ )Im[ A +1 expj( kπ 2 + ϕ 0 ) ]
Q 1 =( I 1 1 I 1 3 )+j( I 1 0 I 1 2 ) Q +1 =( I +1 1 + I +1 3 )+j( I +1 0 I +1 2 )
A 1 expj ϕ 0 = Q 1 4 A 0 J 0 ( ψ ) J 1 ( ψ ) A +1 expj ϕ 0 = Q +1 4 A 0 J 0 ( ψ ) J 1 ( ψ )
α H = Im( Q 1 Q +1 ) Re( Q 1 Q +1 )

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