Abstract

InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs’ performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the improvement of the quality of depletion region by inserting an undoped GaN layer, as well as reduction of the Shockley–Read–Hall recombination in InGaN/GaN MQWs.

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  1. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
    [CrossRef]
  2. J. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett. 95(16), 161110 (2009).
    [CrossRef]
  3. I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett. 82(17), 2755–2757 (2003).
    [CrossRef]
  4. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
    [CrossRef]
  5. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
    [CrossRef]
  6. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
    [CrossRef]
  7. Y. L. Li, Y. R. Huang, and Y. H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
    [CrossRef]
  8. M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B 60(3), 1496–1499 (1999).
    [CrossRef]
  9. D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction,” Appl. Phys. Lett. 72(11), 1365–1367 (1998).
    [CrossRef]
  10. X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett. 43, 1987–1991 (2002).
  11. S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 97(3), 705–708 (2009).
    [CrossRef]
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    [CrossRef]
  15. G. R. Nash and T. Ashley, “Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region,” Appl. Phys. Lett. 94(23), 23510 (2009).
    [CrossRef]
  16. APSYS by Crosslight Software Inc, Burnaby, Canada ( http://www.crosslight.com ).

2009 (3)

J. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett. 95(16), 161110 (2009).
[CrossRef]

S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 97(3), 705–708 (2009).
[CrossRef]

G. R. Nash and T. Ashley, “Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region,” Appl. Phys. Lett. 94(23), 23510 (2009).
[CrossRef]

2008 (1)

A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[CrossRef]

2007 (3)

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[CrossRef]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[CrossRef]

Y. L. Li, Y. R. Huang, and Y. H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
[CrossRef]

2003 (1)

I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett. 82(17), 2755–2757 (2003).
[CrossRef]

2002 (1)

X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett. 43, 1987–1991 (2002).

1999 (1)

M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B 60(3), 1496–1499 (1999).
[CrossRef]

1998 (1)

D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction,” Appl. Phys. Lett. 72(11), 1365–1367 (1998).
[CrossRef]

1996 (1)

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[CrossRef]

1968 (1)

S. C. Choo, “Carrier generation-recombination in the space-charge region of an asymmetrical pn junction,” Solid-State Electron. 11(11), 1069–1077 (1968).
[CrossRef]

1949 (1)

W. Shockley, “The theory of pn junctions in semiconductors and pn junction transistors,” Bell Syst. Tech. J. 28, 435–489 (1949).

Ashley, T.

G. R. Nash and T. Ashley, “Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region,” Appl. Phys. Lett. 94(23), 23510 (2009).
[CrossRef]

Azuhata, T.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[CrossRef]

Bigenwald, P.

M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B 60(3), 1496–1499 (1999).
[CrossRef]

Blood, P.

I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett. 82(17), 2755–2757 (2003).
[CrossRef]

Cai, L. E.

J. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett. 95(16), 161110 (2009).
[CrossRef]

Cao, X. A.

X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett. 43, 1987–1991 (2002).

Chichibu, S.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[CrossRef]

Choo, S. C.

S. C. Choo, “Carrier generation-recombination in the space-charge region of an asymmetrical pn junction,” Solid-State Electron. 11(11), 1069–1077 (1968).
[CrossRef]

Dai, Q.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[CrossRef]

David, A.

A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[CrossRef]

Gardner, N. F.

A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[CrossRef]

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[CrossRef]

Gaska, R.

D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction,” Appl. Phys. Lett. 72(11), 1365–1367 (1998).
[CrossRef]

Gil, B.

M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B 60(3), 1496–1499 (1999).
[CrossRef]

Grandjean, N.

M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B 60(3), 1496–1499 (1999).
[CrossRef]

Grundmann, M. J.

A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[CrossRef]

Hsu, T. C.

S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 97(3), 705–708 (2009).
[CrossRef]

Hu, X. L.

J. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett. 95(16), 161110 (2009).
[CrossRef]

Huang, Y. R.

Y. L. Li, Y. R. Huang, and Y. H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
[CrossRef]

Humphreys, C. J.

I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett. 82(17), 2755–2757 (2003).
[CrossRef]

Jiang, F.

J. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett. 95(16), 161110 (2009).
[CrossRef]

Kaeding, J. F.

A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[CrossRef]

Kappers, M. J.

I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett. 82(17), 2755–2757 (2003).
[CrossRef]

Khan, M. A.

D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction,” Appl. Phys. Lett. 72(11), 1365–1367 (1998).
[CrossRef]

Kim, J. K.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[CrossRef]

Kim, M. H.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[CrossRef]

Krames, M. R.

A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[CrossRef]

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[CrossRef]

Kretchmer, J.

X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett. 43, 1987–1991 (2002).

Kuksenkov, D. V.

D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction,” Appl. Phys. Lett. 72(11), 1365–1367 (1998).
[CrossRef]

Kuo, Y. K.

S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 97(3), 705–708 (2009).
[CrossRef]

Lai, Y. H.

Y. L. Li, Y. R. Huang, and Y. H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
[CrossRef]

LeBoeuf, S. F.

X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett. 43, 1987–1991 (2002).

Lefebvre, P.

M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B 60(3), 1496–1499 (1999).
[CrossRef]

Leroux, M.

M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B 60(3), 1496–1499 (1999).
[CrossRef]

Li, Y. L.

Y. L. Li, Y. R. Huang, and Y. H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett. 91(18), 181113 (2007).
[CrossRef]

Massies, J.

M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B 60(3), 1496–1499 (1999).
[CrossRef]

Mihopoulos, T. G.

A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 92(5), 053502 (2008).
[CrossRef]

Mueller, G. O.

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[CrossRef]

Munkholm, A.

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[CrossRef]

Nakamura, S.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[CrossRef]

Nash, G. R.

G. R. Nash and T. Ashley, “Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region,” Appl. Phys. Lett. 94(23), 23510 (2009).
[CrossRef]

Osinsky, A.

D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction,” Appl. Phys. Lett. 72(11), 1365–1367 (1998).
[CrossRef]

Park, Y.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[CrossRef]

Piprek, J.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[CrossRef]

Pope, I. A.

I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett. 82(17), 2755–2757 (2003).
[CrossRef]

Sandvik, P.

X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett. 43, 1987–1991 (2002).

Schubert, E. F.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[CrossRef]

Schubert, M. F.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[CrossRef]

Shen, Y. C.

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[CrossRef]

Shen, Y. J.

S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 97(3), 705–708 (2009).
[CrossRef]

Shockley, W.

W. Shockley, “The theory of pn junctions in semiconductors and pn junction transistors,” Bell Syst. Tech. J. 28, 435–489 (1949).

Smowton, P. M.

I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett. 82(17), 2755–2757 (2003).
[CrossRef]

Sota, T.

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996).
[CrossRef]

Stokes, E. B.

X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett. 43, 1987–1991 (2002).

Temkin, H.

D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction,” Appl. Phys. Lett. 72(11), 1365–1367 (1998).
[CrossRef]

Thomson, J. D.

I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett. 82(17), 2755–2757 (2003).
[CrossRef]

Tsai, M. C.

S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 97(3), 705–708 (2009).
[CrossRef]

Tsai, M. L.

S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 97(3), 705–708 (2009).
[CrossRef]

Walker, D.

X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett. 43, 1987–1991 (2002).

Wang, Q. M.

J. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett. 95(16), 161110 (2009).
[CrossRef]

Watanabe, S.

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007).
[CrossRef]

Yen, S. H.

S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process. 97(3), 705–708 (2009).
[CrossRef]

Yu, J. Z.

J. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett. 95(16), 161110 (2009).
[CrossRef]

Zhang, B. P.

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Figures (4)

Fig. 1
Fig. 1

Experimental (square) and simulated (star) current-voltage (I-V) characteristics of all samples.

Fig. 2
Fig. 2

The dependence of luminance intensities on current of all samples.

Fig. 3
Fig. 3

(a) Experimental peak wavelength and FWHM and (b) measured light output power at 20mAand reverse leakage current at −8V as a function of undoped GaN interlayer thickness.

Fig. 4
Fig. 4

(a) Simulated distribution of SRH recombination rate and (b) calculated total SRH recombination rate in MQWs of all samples at 20mA.

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