Abstract

Lateral photovoltaic effect has been studied in p-La0.67Ca0.33MnO3/n-Si heterojunction. Under illumination of continuous 808 nm laser beam on the film surface, a transient photovoltaic overshoot accompanied with the steady signal was observed when the laser turned off and on. The open-circuit photovoltage had a linear dependence on illuminated position, and the sensitivity reached 0.75 mVmW−1mm−1 for steady value and 6.25 mVmW−1mm−1 for the transient peak value. Especially, an enhancement in position detecting sensitivity was observed when the interface of this heterojunction was irradiated, which were 1.25 mVmW−1mm−1 (steady value) and 26.0 mVmW−1mm−1 (peak value). This work demonstrates a novel way to increase sensitivity for manganite-based position sensitive detectors.

© 2011 OSA

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  1. W. Schottky, “Uber den enstelhungsort der photoelektronen in kuper-kuperoxyydul-photozellen,” Phys. Z. 31, 913 (1930).
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    [CrossRef]
  4. D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
    [CrossRef]
  5. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
    [CrossRef]
  6. D. Kabra, Th. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
    [CrossRef]
  7. C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
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  8. C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
    [CrossRef] [PubMed]
  9. H. Águas, L. Pereira, D. Costa, E. Fortunato, and R. Martins, “Super linear position sensitive detectors using MIS structures,” Opt. Mater. 27(5), 1088–1092 (2005).
    [CrossRef]
  10. N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
    [CrossRef]
  11. L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
    [CrossRef] [PubMed]
  12. H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
    [CrossRef]
  13. K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
    [CrossRef]
  14. X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
    [CrossRef]
  15. Z. J. Yan, X. Yuan, Y. B. Xu, L. Q. Liu, and X. Zhang, “Photovoltaic effects in obliquely deposited oxygen-deficient manganite thin film,” Appl. Phys. Lett. 91(10), 104101 (2007).
    [CrossRef]
  16. C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
    [CrossRef]
  17. X. T. Zeng and H. K. Wong, “Epitaxial growth of single-crystal (La,Ca)MnO3 thin films,” Appl. Phys. Lett. 66(24), 3371–3373 (1995).
    [CrossRef]
  18. C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel Switzerland) 10(11), 10155–10180 (2010).
    [CrossRef]
  19. G. Lucovsky, “Photoeffects in nonuniformly irradiated p-n junctions,” J. Appl. Phys. 31(6), 1088–1095 (1960).
    [CrossRef]

2011 (1)

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

2010 (4)

C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel Switzerland) 10(11), 10155–10180 (2010).
[CrossRef]

L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
[CrossRef] [PubMed]

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
[CrossRef]

2009 (1)

2007 (1)

Z. J. Yan, X. Yuan, Y. B. Xu, L. Q. Liu, and X. Zhang, “Photovoltaic effects in obliquely deposited oxygen-deficient manganite thin film,” Appl. Phys. Lett. 91(10), 104101 (2007).
[CrossRef]

2006 (1)

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

2005 (2)

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

H. Águas, L. Pereira, D. Costa, E. Fortunato, and R. Martins, “Super linear position sensitive detectors using MIS structures,” Opt. Mater. 27(5), 1088–1092 (2005).
[CrossRef]

2004 (1)

D. Kabra, Th. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

2001 (1)

J. Henry and J. Livingstone, “Thin film amorphous silicon position-sensitive detectors,” Adv. Mater. (Deerfield Beach Fla.) 13(12-13), 1022–1026 (2001).
[CrossRef]

1995 (1)

X. T. Zeng and H. K. Wong, “Epitaxial growth of single-crystal (La,Ca)MnO3 thin films,” Appl. Phys. Lett. 66(24), 3371–3373 (1995).
[CrossRef]

1994 (1)

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
[CrossRef]

1989 (1)

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

1986 (1)

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

1960 (1)

G. Lucovsky, “Photoeffects in nonuniformly irradiated p-n junctions,” J. Appl. Phys. 31(6), 1088–1095 (1960).
[CrossRef]

1930 (1)

W. Schottky, “Uber den enstelhungsort der photoelektronen in kuper-kuperoxyydul-photozellen,” Phys. Z. 31, 913 (1930).

Águas, H.

H. Águas, L. Pereira, D. Costa, E. Fortunato, and R. Martins, “Super linear position sensitive detectors using MIS structures,” Opt. Mater. 27(5), 1088–1092 (2005).
[CrossRef]

Bethea, C. G.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Boeringer, D. W.

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
[CrossRef]

Brasen, D.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Chen, Z. H.

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Cheng, B. L.

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Costa, D.

H. Águas, L. Pereira, D. Costa, E. Fortunato, and R. Martins, “Super linear position sensitive detectors using MIS structures,” Opt. Mater. 27(5), 1088–1092 (2005).
[CrossRef]

Dai, S. Y.

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Du, L.

Florez, L. T.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Fortunato, E.

H. Águas, L. Pereira, D. Costa, E. Fortunato, and R. Martins, “Super linear position sensitive detectors using MIS structures,” Opt. Mater. 27(5), 1088–1092 (2005).
[CrossRef]

Ge, C.

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

Guo, H. Z.

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

Harbison, J. P.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

He, M.

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Henry, J.

J. Henry and J. Livingstone, “Thin film amorphous silicon position-sensitive detectors,” Adv. Mater. (Deerfield Beach Fla.) 13(12-13), 1022–1026 (2001).
[CrossRef]

Huang, Y. H.

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Jin, K. J.

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Kabra, D.

D. Kabra, Th. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

Kong, Y. C.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

Levine, B. F.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Li, X. M.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

Liu, L. Q.

Z. J. Yan, X. Yuan, Y. B. Xu, L. Q. Liu, and X. Zhang, “Photovoltaic effects in obliquely deposited oxygen-deficient manganite thin film,” Appl. Phys. Lett. 91(10), 104101 (2007).
[CrossRef]

Livingstone, J.

J. Henry and J. Livingstone, “Thin film amorphous silicon position-sensitive detectors,” Adv. Mater. (Deerfield Beach Fla.) 13(12-13), 1022–1026 (2001).
[CrossRef]

Lu, H. B.

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Lu, Z. Q.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

Lucovsky, G.

G. Lucovsky, “Photoeffects in nonuniformly irradiated p-n junctions,” J. Appl. Phys. 31(6), 1088–1095 (1960).
[CrossRef]

Martins, R.

H. Águas, L. Pereira, D. Costa, E. Fortunato, and R. Martins, “Super linear position sensitive detectors using MIS structures,” Opt. Mater. 27(5), 1088–1092 (2005).
[CrossRef]

Meynadier, M. H.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Nahory, R. E.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Narayan, K. S.

D. Kabra, Th. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

Ni, H.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

Pereira, L.

H. Águas, L. Pereira, D. Costa, E. Fortunato, and R. Martins, “Super linear position sensitive detectors using MIS structures,” Opt. Mater. 27(5), 1088–1092 (2005).
[CrossRef]

Schottky, W.

W. Schottky, “Uber den enstelhungsort der photoelektronen in kuper-kuperoxyydul-photozellen,” Phys. Z. 31, 913 (1930).

Singh, Th. B.

D. Kabra, Th. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

Tabatabaie, N.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Tsu, R.

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
[CrossRef]

Wang, C.

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

Wang, F.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

Wang, H.

C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
[CrossRef]

L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film,” Opt. Express 18(9), 9113–9118 (2010).
[CrossRef] [PubMed]

C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel Switzerland) 10(11), 10155–10180 (2010).
[CrossRef]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

Willens, R. H.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Wong, H. K.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

X. T. Zeng and H. K. Wong, “Epitaxial growth of single-crystal (La,Ca)MnO3 thin films,” Appl. Phys. Lett. 66(24), 3371–3373 (1995).
[CrossRef]

Xia, Y. X.

Xiang, W. F.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

Xiao, S. Q.

Xu, Y. B.

Z. J. Yan, X. Yuan, Y. B. Xu, L. Q. Liu, and X. Zhang, “Photovoltaic effects in obliquely deposited oxygen-deficient manganite thin film,” Appl. Phys. Lett. 91(10), 104101 (2007).
[CrossRef]

Yan, Z. J.

Z. J. Yan, X. Yuan, Y. B. Xu, L. Q. Liu, and X. Zhang, “Photovoltaic effects in obliquely deposited oxygen-deficient manganite thin film,” Appl. Phys. Lett. 91(10), 104101 (2007).
[CrossRef]

Yang, G.-

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

Yang, G. Z.

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Yu, C.

C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel Switzerland) 10(11), 10155–10180 (2010).
[CrossRef]

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[CrossRef]

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X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
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X. T. Zeng and H. K. Wong, “Epitaxial growth of single-crystal (La,Ca)MnO3 thin films,” Appl. Phys. Lett. 66(24), 3371–3373 (1995).
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Zhang, X.

Z. J. Yan, X. Yuan, Y. B. Xu, L. Q. Liu, and X. Zhang, “Photovoltaic effects in obliquely deposited oxygen-deficient manganite thin film,” Appl. Phys. Lett. 91(10), 104101 (2007).
[CrossRef]

Zhao, K.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Zhao, R. Q.

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

Zhao, S. Q.

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

Zhou, Y. L.

K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
[CrossRef]

Adv. Mater. (Deerfield Beach Fla.) (1)

J. Henry and J. Livingstone, “Thin film amorphous silicon position-sensitive detectors,” Adv. Mater. (Deerfield Beach Fla.) 13(12-13), 1022–1026 (2001).
[CrossRef]

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[CrossRef]

C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96(17), 171102 (2010).
[CrossRef]

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

X. M. Li, K. Zhao, H. Ni, S. Q. Zhao, W. F. Xiang, Z. Q. Lu, Z. J. Yue, F. Wang, Y. C. Kong, and H. K. Wong, “Voltage tunable photodetecting properties of La0.4Ca0.6MnO3 films grown on miscut LaSrAlO4 substrates,” Appl. Phys. Lett. 97(4), 044104 (2010).
[CrossRef]

Z. J. Yan, X. Yuan, Y. B. Xu, L. Q. Liu, and X. Zhang, “Photovoltaic effects in obliquely deposited oxygen-deficient manganite thin film,” Appl. Phys. Lett. 91(10), 104101 (2007).
[CrossRef]

C. Wang, K. J. Jin, R. Q. Zhao, H. B. Lu, H. Z. Guo, C. Ge, M. He, C. Wang, and G.- Yang, “Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness,” Appl. Phys. Lett. 98(18), 181101 (2011).
[CrossRef]

X. T. Zeng and H. K. Wong, “Epitaxial growth of single-crystal (La,Ca)MnO3 thin films,” Appl. Phys. Lett. 66(24), 3371–3373 (1995).
[CrossRef]

H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai, and G. Z. Yang, “Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions,” Appl. Phys. Lett. 86(24), 241915 (2005).
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Opt. Express (2)

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[CrossRef]

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K. Zhao, K. J. Jin, Y. H. Huang, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, and G. Z. Yang, “Laser-induced ultrafast photovoltaic effect in La0.67Ca0.33MnO3 films at room temperature,” Physica B 373(1), 72–75 (2006).
[CrossRef]

Sensors (Basel Switzerland) (1)

C. Yu and H. Wang, “Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures,” Sensors (Basel Switzerland) 10(11), 10155–10180 (2010).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

Schematic setup for two illumination modes and two electrode modes

Fig. 2
Fig. 2

I-V characteristics of the LCMO/Si heterojunction in dark and under irradiation of the 808 nm laser and inset shows the schematic measurement setup.

Fig. 3
Fig. 3

Two typical waveforms recorded by oscilloscope with 1 MΩ input impedance without any bias for Mode 1a when laser spot fixed at (a) x = 2.4 mm and (b) x = −2.4 mm, respectively.

Fig. 4
Fig. 4

Waveform and detailed profile of a PSD for Mode 1 and Mode 2. (a) Mode 1a, (b) Mode 1b, (c) Mode 2a, (d) Mode 2b. The vertical arrow x leads to the laser spot moving direction.

Fig. 5
Fig. 5

Rs, Rp1 and Rp2 as a function of irradiated position x for Mode 1 and Mode 2

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

V = E ( L ) E ( L ) e = K f N 0 [ exp ( | L x | λ f ) exp ( | L + x | λ f ) ] .
V s = 2 K f N 0 λ f exp ( L λ f ) x

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