Abstract

InGaAs single photon avalanche detectors have previously been fabricated with a negative-feedback mechanism, which allows for free-running Geiger-mode operation and improves the signal noise. To reduce the dark count and improve the detection efficiency, zinc diffusion is necessary to define the p-i-n junction and separate the high-field region from any mesa surface. Here, we demonstrate the benefits of a simple Zn-diffused geometry, yielding 1550nm single-photon detection efficiencies of 20% with a dark count rate of 8 kHz at 140 K for a 22μm diameter device.

© 2011 OSA

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  1. G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).
  2. A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).
  3. K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007).
    [CrossRef]
  4. K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008).
    [CrossRef]
  5. J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009).
    [CrossRef]
  6. H. Sudo and M. Suzuki, “Surface degradation mechanism of InP/InGaAs APDs,” J. Lightwave Technol. 6(10), 1496–1501 (1988).
    [CrossRef]
  7. Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
    [CrossRef]
  8. G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
    [CrossRef]
  9. M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006).
    [CrossRef]
  10. S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
    [CrossRef]

2009 (1)

J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009).
[CrossRef]

2008 (1)

K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008).
[CrossRef]

2007 (1)

K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007).
[CrossRef]

2006 (1)

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006).
[CrossRef]

2004 (2)

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).

A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).

2000 (1)

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

1998 (1)

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

1992 (1)

Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
[CrossRef]

1988 (1)

H. Sudo and M. Suzuki, “Surface degradation mechanism of InP/InGaAs APDs,” J. Lightwave Technol. 6(10), 1496–1501 (1988).
[CrossRef]

Ackley, D. E.

Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
[CrossRef]

Amos, S.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Anderson, J. T.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Ash, R. M.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Athroll, I.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Baek, J. M.

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006).
[CrossRef]

Baynes, N. D.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Berzanskis, A.

A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).

Bi, W. G.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Burm, J.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

Cheng, J.

J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009).
[CrossRef]

K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008).
[CrossRef]

Cho, S. R.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

Choo, A. G.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

Chung, K. S.

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006).
[CrossRef]

Farr, W.

K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007).
[CrossRef]

Forrest, S. R.

Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
[CrossRef]

Gisin, N.

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).

Guinnard, O.

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).

Hasnain, G.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Hladky, J.

Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
[CrossRef]

Hollenhorst, J. N.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Kim, M. D.

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006).
[CrossRef]

Kim, S. G.

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006).
[CrossRef]

Kim, T. G.

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006).
[CrossRef]

Kim, T. I.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

Lange, M. J.

Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
[CrossRef]

Lee, S. D.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

Liu, Y.

Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
[CrossRef]

Lo, Y.-H.

J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009).
[CrossRef]

K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008).
[CrossRef]

K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007).
[CrossRef]

Ma, J. S.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

Moll, N.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Olsen, G. H.

Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
[CrossRef]

Ribordy, G.

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).

Song, S.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Stucki, D.

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).

Su, C.-Y.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

Subacius, D.

A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).

Sudo, H.

H. Sudo and M. Suzuki, “Surface degradation mechanism of InP/InGaAs APDs,” J. Lightwave Technol. 6(10), 1496–1501 (1988).
[CrossRef]

Suzuki, M.

H. Sudo and M. Suzuki, “Surface degradation mechanism of InP/InGaAs APDs,” J. Lightwave Technol. 6(10), 1496–1501 (1988).
[CrossRef]

Trifonov, A.

A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).

Wegmuller, M.

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).

Yang, S. K.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

You, S.

J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009).
[CrossRef]

K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008).
[CrossRef]

Yu, J. S.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

Zavriyev, A.

A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).

Zbinden, H.

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).

Zhang, A.

K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007).
[CrossRef]

Zhao, K.

J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009).
[CrossRef]

K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008).
[CrossRef]

K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007).
[CrossRef]

Appl. Phys. Lett. (2)

K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007).
[CrossRef]

K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008).
[CrossRef]

IEEE J. Quantum Electron. (1)

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000).
[CrossRef]

J. Lightwave Technol. (2)

H. Sudo and M. Suzuki, “Surface degradation mechanism of InP/InGaAs APDs,” J. Lightwave Technol. 6(10), 1496–1501 (1988).
[CrossRef]

Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992).
[CrossRef]

J. Mod. Opt. (2)

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).

A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).

Proc. SPIE (1)

J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009).
[CrossRef]

Thin Solid Films (1)

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006).
[CrossRef]

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