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Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection

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Abstract

Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of ~450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.

©2011 Optical Society of America

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Figures (6)

Fig. 1
Fig. 1 Schematic device structure in cross-section view: (a) samples A, (b) samples B, (c) samples C and (d) samples D.
Fig. 2
Fig. 2 Low temperature (12 K) PL spectra of samples A and B for the indicated (a) 325 nm He-Cd laser excitation and (b) 488 nm Ar laser excitation.
Fig. 3
Fig. 3 Low temperature (12 K) PL spectra for the 488 nm (2.54 eV) Ar laser excitation of samples A, B, C and D.
Fig. 4
Fig. 4 Typical room temperature (300 K) spectral responsivity of the PD-I(sample C) and PD-II(sample D) taken at zero bias.
Fig. 5
Fig. 5 488 nm (Eexc = 2.54 eV) Ar laser incident pump power dependence of the spectrally up-converted PL emission intensity of samples A at low temperature (12 K). The lines show the linear regression in the double-logarithmic plot. The slope of n = 0.9 is also indicated.
Fig. 6
Fig. 6 Schematic band diagram of sample A and the up-converted PL excitation process resulting in emission at 2.99 eV (Eemi = 2.99 eV) and 3.51 eV (Eemi = 3.51 eV).
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