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Wafer-scale broadband antireflective silicon fabricated by metal-assisted chemical etching using spin-coating Ag ink

Chan Il Yeo, Young Min Song, Sung Jun Jang, and Yong Tak Lee

Open Access Open Access

Abstract

We report broadband antireflective disordered subwavelength structures (d-SWSs), which were fabricated on 4-inch silicon wafers by spin-coating Ag ink and metal-assisted chemical etching. The antireflection properties of the d-SWSs depend on its dimensions and heights, which were changed by the sintering temperature of the spin-coated Ag ink and etching time. The fabricated d-SWSs drastically reduced surface reflection over a wide range of wavelengths and incident angles, providing good surface uniformity. The d-SWSs with the most appropriate geometry for practical solar cell applications exhibit only 1.23% solar-weighted reflectance in the wavelength range of 300-1100 nm and average reflectance <5% up to an incident angle of 55° in the wavelength range of 300-2500 nm. This simple and low-cost nanofabrication method for antireflection could be of great importance in optical device applications because it allows mass production without any lithography processes or sophisticated equipment.

©2011 Optical Society of America

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Figures (6)
Fig. 1
Fig. 1 Schematic illustration (left column) of the process steps for fabricating the d-SWSs by spin-coating Ag ink and metal-assisted chemical etching. Tilted cross-sectional view SEM images (right column) in each process step.

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Fig. 2
Fig. 2 (a) Exposed surface ratio of silicon wafers as a function of sintering temperature. The insets show top view SEM images of Ag mesh structure (gray contrast region). (b) Top view SEM images of d-SWSs after metal-assisted chemical etching process for 10min.

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Fig. 3
Fig. 3 The measured hemispherical reflectance spectra as a function of wavelength for the fabricated d-SWSs with an etching time of 10 min.

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Fig. 4
Fig. 4 (a) The etching depth of silicon wafers as a function of etching time, the gradient of the line is about 44.3 nm/min. (b) The calculated SWR of silicon wafers with SWSs as a function of sintering temperatures and etching time.

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Fig. 5
Fig. 5 Incidence-angle-dependent reflectance as a function of wavelength for 10 min etched silicon SWSs with various sintering temperatures.

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Fig. 6
Fig. 6 (a) Comparison of 4-inch processed antireflective black silicon (right) with reflective polished bare silicon (left). (b) Surface map of bare silicon wafer. (c) Surface map of black silicon wafer.

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Equations (1)

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S W R = ∫ R ( λ ) N p h o t o n ( λ ) d λ ∫ N p h o t o n ( λ ) d λ ,
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