Abstract

We present data on the design and performance analysis of phase shifted distributed feedback (DFB) lasers on the hybrid silicon platform. The lasing wavelength for various input currents and temperatures, for devices with standard quarter-wavelength, 60 μm and 120 μm-long phase shift are compared for mode stability and output power. The pros and cons of including a large phase shift region in the grating design are analyzed.

©2011 Optical Society of America

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References

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  1. D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97(7), 1166–1185 (2009).
    [Crossref]
  2. D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
    [Crossref]
  3. G. Morthier and P. Vankwikelberge, Handbook of Distributed Feedback Laser Diodes (Artech House, Inc., 1997), Chaps. 10 and 11.
  4. A. W. Fang, E. Lively, Y. Kuo, D. Liang, and J. Bowers, “Distributed Feedback Silicon Evanescent Laser,” in National Fiber Optic Engineers Conference, OSA Technical Digest (CD) (Optical Society of America, 2008), paper PDP15.
  5. H. Ghafouri-Shiraz, Distributed Feedback Laser Diodes and Optical Tunable Filters (Wiley, 2003), Chaps. 3 and 5.
  6. W. Alexander, Fang, “Silicon evanescent lasers,” Ph.D. dissertation (Dept. of Elect. and Comp. Eng., Univ. of California, Santa Barbara, CA, 2008), pp. 104–105.
  7. M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent Laser,” Opt. Express 15(23), 15041–15046 (2007).
    [Crossref] [PubMed]

2010 (1)

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

2009 (1)

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97(7), 1166–1185 (2009).
[Crossref]

2007 (1)

Bowers, J. E.

Cohen, O.

Fang, A. W.

Jones, R.

Liang, D.

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

Miller, D. A. B.

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97(7), 1166–1185 (2009).
[Crossref]

Paniccia, M. J.

Park, H.

Raday, O.

Sysak, M. N.

Nat. Photonics (1)

D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[Crossref]

Opt. Express (1)

Proc. IEEE (1)

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97(7), 1166–1185 (2009).
[Crossref]

Other (4)

G. Morthier and P. Vankwikelberge, Handbook of Distributed Feedback Laser Diodes (Artech House, Inc., 1997), Chaps. 10 and 11.

A. W. Fang, E. Lively, Y. Kuo, D. Liang, and J. Bowers, “Distributed Feedback Silicon Evanescent Laser,” in National Fiber Optic Engineers Conference, OSA Technical Digest (CD) (Optical Society of America, 2008), paper PDP15.

H. Ghafouri-Shiraz, Distributed Feedback Laser Diodes and Optical Tunable Filters (Wiley, 2003), Chaps. 3 and 5.

W. Alexander, Fang, “Silicon evanescent lasers,” Ph.D. dissertation (Dept. of Elect. and Comp. Eng., Univ. of California, Santa Barbara, CA, 2008), pp. 104–105.

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Figures (9)

Fig. 1
Fig. 1 Schematic of a symmetric phase-shifted DFB silicon laser.

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Fig. 2
Fig. 2 Hybrid silicon chip showing 300 DFB lasers with on-chip photodetectors.

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Fig. 3
Fig. 3 Grating structures with phase-shift lengths equal to (a) one quarter wavelength (λ0 = 1600 nm), (b) 60 μm, and (c) 120 μm.

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Fig. 4
Fig. 4 L-I-V curve for a DFB laser with 120 μm long phase-shift and κL = 3. The total device length is 240 μm.

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Fig. 5
Fig. 5 Threshold current (a) and maximum output power (b) plotted against κL for three phase-shift lengths, one quarter wavelength (green line and diamonds), 60 μm (blue line and triangles) and 120 μm (red line and circles).

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Fig. 6
Fig. 6 (a) The solutions to threshold modal gain condition in a quarter-wave shifted DFB laser for cavity modes near the Bragg wavelength. (b) The spectrum at 70 mA and 90 mA injection current for devices with κL = 3 and 4 respectively. Inset: The cw lasing spectrum over 30nm showing single mode lasing.

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Fig. 7
Fig. 7 (a) The solutions to threshold modal gain condition in a DFB laser, with 60 μm phase-shift length, for cavity modes near the Bragg wavelength. (b) The spectrum at 90 mA and 100 mA injection current for devices with κL = 3 and 4 respectively.

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Fig. 8
Fig. 8 (a) The solutions to threshold modal gain condition in a DFB laser, with 120 μm phase-shift length, for cavity modes near the Bragg wavelength. (b) The spectrum at 90 mA injection current for devices with κL = 2, 3 and 4.

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Fig. 9
Fig. 9 (a) The ratio of change in lasing wavelength to change in input electrical power for different laser designs in cw operation. The lines are a linear fit to the data points. (b) The ratio of change in lasing wavelength to change in stage temperature for the same designs.

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Equations (2)

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I t h = I t h 0 e ( ( Z T ( P D − P o u t ) + T ) T 0 )
P o u t = η i ( α m 〈 α i 〉 + α m ) ( h ν q ) e ( − ( Z T ( P D − P o u t ) + T ) T 1 ) ( I − I t h )

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