Abstract

The large infrared lateral photovoltaic effect (LPE) based on semiconductor structures has been a challenge for a long time because the light in this region is hard to be absorbed. In this study, we report an unusual infrared laser induced LPE observed in sputtered Cu2O thin films. The maximum open-circuit lateral photovoltage can reach up to a remarkable value of 30.6mV under irradiation of Ti: Sapphire laser emitting 100 fs pulses at 2000 nm with pulse energy of 50 μJ. Temperature gradient induced by infrared laser is introduced to interpret this infrared induced LPV effect. The high position sensitivity reaching 15.3mV/mm and easier fabrication techniques suggests this oxidized film a potential candidate for the novel infrared photodetectors.

© 2010 OSA

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    [CrossRef]
  3. J. Henry and J. Livingstone, “Thin-film amorphous silicon position-sensitive detectors,” Adv. Mater. 13(12–13), 1022–1026 (2001).
    [CrossRef]
  4. K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
    [CrossRef]
  5. D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
    [CrossRef]
  6. J. Henry, and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” in Proceedings of IEEE Sensors (IEEE, 2002), pp. 836–840.
  7. N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
    [CrossRef]
  8. J. Cárabe, J. J. Gandia, N. Gonzalez, E. Galiano, and M. T. Gutierrez, “A simple amorphous-silicon photodetector for two-dimensional position sensing,” Appl. Phys. Lett. 69(22), 3408–3410 (1996).
    [CrossRef]
  9. S. Salvatori, G. Mazzeo, and G. Conte, “Voltage division position sensitive detectors based on photoconductive materials; Part I: Principle of operation,” IEEE Sens. J. 8(2), 188–193 (2008).
    [CrossRef]
  10. D. Kabra, S. Shriram, N. S. Vidhyadhiraja, and K. S. Narayan, “Charge carrier dynamics in organic semiconductors by position dependent optical probing,” J. Appl. Phys. 101(6), 064510–064517 (2007).
    [CrossRef]
  11. J. Henry and J. Livingstone, “Improved position sensitive detectors using high resistivity substrates,” J. Phys. D Appl. Phys. 41(16), 165106 (2008).
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  14. J. Henry and J. Livingstone, “A comparison of Schottky barrier position-sensitive detectors as a function of light wavelength,” IEEE Sens. J. 3(4), 519–524 (2003).
    [CrossRef]
  15. J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” IEEE Sens. J. 2(4), 372–376 (2002).
    [CrossRef]
  16. D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
    [CrossRef]
  17. E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2–3), 135–142 (1996).
    [CrossRef]
  18. S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
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  19. S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si,” J. Phys. D Appl. Phys. 40(18), 5580–5583 (2007).
    [CrossRef]
  20. C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112–141113 (2009).
    [CrossRef]
  21. C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
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  22. M. Jörger, E. Tsitsishvili, T. Fleck, and C. Klingshirn, “Infrared absorption by excitons in Cu2O,” Phys. Status Solidi B 238(3), 470–473 (2003).
    [CrossRef]
  23. M. Jörger, T. Fleck, C. Klingshirn, and R. von Baltz, “Midinfrared properties of cuprous oxide: high-order lattice vibrations and intraexcitonic transitions of the 1s paraexciton,” Phys. Rev. B 71(23), 235210 (2005).
    [CrossRef]
  24. R. Huber, B. A. Schmid, Y. R. Shen, D. S. Chemla, and R. A. Kaindl, “Stimulated terahertz emission from intraexcitonic transitions in Cu2O,” Phys. Rev. Lett. 96(1), 017402 (2006).
    [CrossRef] [PubMed]
  25. A. R. Rastkar, A. R. Niknam, and B. Shokri, “Characterization of copper oxide nanolayers deposited by direct current magnetron sputtering,” Thin Solid Films 517(18), 5464–5467 (2009).
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  26. J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
    [CrossRef]
  27. J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
    [CrossRef]
  28. R. Martins and E. Fortunato, “Role of the resistive layer on the performances of 2D a-Si:H thin film position sensitive detectors,” Thin Solid Films 337(1–2), 158–162 (1999).
    [CrossRef]
  29. E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, “Thin film position sensitive detector based on amorphous silicon p–i–n diode,” Rev. Sci. Instrum. 65(12), 3784–3786 (1994).
    [CrossRef]
  30. A. P. Young and C. M. Schwartz, “Electrical conductivity and thermoelectric power of Cu2O,” J. Phys. Chem. Solids 30(2), 249–252 (1969).
    [CrossRef]
  31. S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
    [CrossRef]
  32. K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
    [CrossRef]

2009

A. R. Rastkar, A. R. Niknam, and B. Shokri, “Characterization of copper oxide nanolayers deposited by direct current magnetron sputtering,” Thin Solid Films 517(18), 5464–5467 (2009).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112–141113 (2009).
[CrossRef]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

2008

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[CrossRef] [PubMed]

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
[CrossRef]

S. Salvatori, G. Mazzeo, and G. Conte, “Voltage division position sensitive detectors based on photoconductive materials; Part I: Principle of operation,” IEEE Sens. J. 8(2), 188–193 (2008).
[CrossRef]

J. Henry and J. Livingstone, “Improved position sensitive detectors using high resistivity substrates,” J. Phys. D Appl. Phys. 41(16), 165106 (2008).
[CrossRef]

2007

D. Kabra, S. Shriram, N. S. Vidhyadhiraja, and K. S. Narayan, “Charge carrier dynamics in organic semiconductors by position dependent optical probing,” J. Appl. Phys. 101(6), 064510–064517 (2007).
[CrossRef]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si,” J. Phys. D Appl. Phys. 40(18), 5580–5583 (2007).
[CrossRef]

2006

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
[CrossRef]

R. Huber, B. A. Schmid, Y. R. Shen, D. S. Chemla, and R. A. Kaindl, “Stimulated terahertz emission from intraexcitonic transitions in Cu2O,” Phys. Rev. Lett. 96(1), 017402 (2006).
[CrossRef] [PubMed]

2005

M. Jörger, T. Fleck, C. Klingshirn, and R. von Baltz, “Midinfrared properties of cuprous oxide: high-order lattice vibrations and intraexcitonic transitions of the 1s paraexciton,” Phys. Rev. B 71(23), 235210 (2005).
[CrossRef]

2004

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
[CrossRef]

2003

M. Jörger, E. Tsitsishvili, T. Fleck, and C. Klingshirn, “Infrared absorption by excitons in Cu2O,” Phys. Status Solidi B 238(3), 470–473 (2003).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of Schottky barrier position-sensitive detectors as a function of light wavelength,” IEEE Sens. J. 3(4), 519–524 (2003).
[CrossRef]

2002

J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” IEEE Sens. J. 2(4), 372–376 (2002).
[CrossRef]

2001

J. Henry and J. Livingstone, “Thin-film amorphous silicon position-sensitive detectors,” Adv. Mater. 13(12–13), 1022–1026 (2001).
[CrossRef]

1999

R. Martins and E. Fortunato, “Role of the resistive layer on the performances of 2D a-Si:H thin film position sensitive detectors,” Thin Solid Films 337(1–2), 158–162 (1999).
[CrossRef]

1996

J. Cárabe, J. J. Gandia, N. Gonzalez, E. Galiano, and M. T. Gutierrez, “A simple amorphous-silicon photodetector for two-dimensional position sensing,” Appl. Phys. Lett. 69(22), 3408–3410 (1996).
[CrossRef]

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2–3), 135–142 (1996).
[CrossRef]

1994

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
[CrossRef]

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, “Thin film position sensitive detector based on amorphous silicon p–i–n diode,” Rev. Sci. Instrum. 65(12), 3784–3786 (1994).
[CrossRef]

1989

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

1986

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

1969

A. P. Young and C. M. Schwartz, “Electrical conductivity and thermoelectric power of Cu2O,” J. Phys. Chem. Solids 30(2), 249–252 (1969).
[CrossRef]

1957

J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Proceedings of the Institute of Radio Engineers (IRE) 45(4), 474–483 (1957) (IRE).

Bethea, C. G.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Boeringer, D. W.

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
[CrossRef]

Brasen, D.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Cárabe, J.

J. Cárabe, J. J. Gandia, N. Gonzalez, E. Galiano, and M. T. Gutierrez, “A simple amorphous-silicon photodetector for two-dimensional position sensing,” Appl. Phys. Lett. 69(22), 3408–3410 (1996).
[CrossRef]

Chang, S. C.

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
[CrossRef]

Chemla, D. S.

R. Huber, B. A. Schmid, Y. R. Shen, D. S. Chemla, and R. A. Kaindl, “Stimulated terahertz emission from intraexcitonic transitions in Cu2O,” Phys. Rev. Lett. 96(1), 017402 (2006).
[CrossRef] [PubMed]

Chen, Z.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Conte, G.

S. Salvatori, G. Mazzeo, and G. Conte, “Voltage division position sensitive detectors based on photoconductive materials; Part I: Principle of operation,” IEEE Sens. J. 8(2), 188–193 (2008).
[CrossRef]

Fernandes, L.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2–3), 135–142 (1996).
[CrossRef]

Fleck, T.

M. Jörger, T. Fleck, C. Klingshirn, and R. von Baltz, “Midinfrared properties of cuprous oxide: high-order lattice vibrations and intraexcitonic transitions of the 1s paraexciton,” Phys. Rev. B 71(23), 235210 (2005).
[CrossRef]

M. Jörger, E. Tsitsishvili, T. Fleck, and C. Klingshirn, “Infrared absorption by excitons in Cu2O,” Phys. Status Solidi B 238(3), 470–473 (2003).
[CrossRef]

Florez, L. T.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Fortunato, E.

R. Martins and E. Fortunato, “Role of the resistive layer on the performances of 2D a-Si:H thin film position sensitive detectors,” Thin Solid Films 337(1–2), 158–162 (1999).
[CrossRef]

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2–3), 135–142 (1996).
[CrossRef]

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, “Thin film position sensitive detector based on amorphous silicon p–i–n diode,” Rev. Sci. Instrum. 65(12), 3784–3786 (1994).
[CrossRef]

Galiano, E.

J. Cárabe, J. J. Gandia, N. Gonzalez, E. Galiano, and M. T. Gutierrez, “A simple amorphous-silicon photodetector for two-dimensional position sensing,” Appl. Phys. Lett. 69(22), 3408–3410 (1996).
[CrossRef]

Gandia, J. J.

J. Cárabe, J. J. Gandia, N. Gonzalez, E. Galiano, and M. T. Gutierrez, “A simple amorphous-silicon photodetector for two-dimensional position sensing,” Appl. Phys. Lett. 69(22), 3408–3410 (1996).
[CrossRef]

Gonzalez, N.

J. Cárabe, J. J. Gandia, N. Gonzalez, E. Galiano, and M. T. Gutierrez, “A simple amorphous-silicon photodetector for two-dimensional position sensing,” Appl. Phys. Lett. 69(22), 3408–3410 (1996).
[CrossRef]

Gu, Y. Z.

Gutierrez, M. T.

J. Cárabe, J. J. Gandia, N. Gonzalez, E. Galiano, and M. T. Gutierrez, “A simple amorphous-silicon photodetector for two-dimensional position sensing,” Appl. Phys. Lett. 69(22), 3408–3410 (1996).
[CrossRef]

Harbison, J. P.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

He, M.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Henry, J.

J. Henry and J. Livingstone, “Improved position sensitive detectors using high resistivity substrates,” J. Phys. D Appl. Phys. 41(16), 165106 (2008).
[CrossRef]

J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
[CrossRef]

J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of Schottky barrier position-sensitive detectors as a function of light wavelength,” IEEE Sens. J. 3(4), 519–524 (2003).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” IEEE Sens. J. 2(4), 372–376 (2002).
[CrossRef]

J. Henry and J. Livingstone, “Thin-film amorphous silicon position-sensitive detectors,” Adv. Mater. 13(12–13), 1022–1026 (2001).
[CrossRef]

Hsieh, J. H.

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
[CrossRef]

Hsueh, J. D.

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
[CrossRef]

Huang, Y.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Huber, R.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

R. Huber, B. A. Schmid, Y. R. Shen, D. S. Chemla, and R. A. Kaindl, “Stimulated terahertz emission from intraexcitonic transitions in Cu2O,” Phys. Rev. Lett. 96(1), 017402 (2006).
[CrossRef] [PubMed]

Jin, K.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Jin, K.-J.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Jörger, M.

M. Jörger, T. Fleck, C. Klingshirn, and R. von Baltz, “Midinfrared properties of cuprous oxide: high-order lattice vibrations and intraexcitonic transitions of the 1s paraexciton,” Phys. Rev. B 71(23), 235210 (2005).
[CrossRef]

M. Jörger, E. Tsitsishvili, T. Fleck, and C. Klingshirn, “Infrared absorption by excitons in Cu2O,” Phys. Status Solidi B 238(3), 470–473 (2003).
[CrossRef]

Kabra, D.

D. Kabra, S. Shriram, N. S. Vidhyadhiraja, and K. S. Narayan, “Charge carrier dynamics in organic semiconductors by position dependent optical probing,” J. Appl. Phys. 101(6), 064510–064517 (2007).
[CrossRef]

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

Kaindl, R. A.

R. Huber, B. A. Schmid, Y. R. Shen, D. S. Chemla, and R. A. Kaindl, “Stimulated terahertz emission from intraexcitonic transitions in Cu2O,” Phys. Rev. Lett. 96(1), 017402 (2006).
[CrossRef] [PubMed]

Kampfrath, T.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

Kira, M.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

Klingshirn, C.

M. Jörger, T. Fleck, C. Klingshirn, and R. von Baltz, “Midinfrared properties of cuprous oxide: high-order lattice vibrations and intraexcitonic transitions of the 1s paraexciton,” Phys. Rev. B 71(23), 235210 (2005).
[CrossRef]

M. Jörger, E. Tsitsishvili, T. Fleck, and C. Klingshirn, “Infrared absorption by excitons in Cu2O,” Phys. Status Solidi B 238(3), 470–473 (2003).
[CrossRef]

Koch, S. W.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

Kuo, P. W.

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
[CrossRef]

Lavareda, G.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2–3), 135–142 (1996).
[CrossRef]

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, “Thin film position sensitive detector based on amorphous silicon p–i–n diode,” Rev. Sci. Instrum. 65(12), 3784–3786 (1994).
[CrossRef]

Leinss, S.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

Leitenstorfer, A.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

Levine, B. F.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Liao, L.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Liu, S. J.

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
[CrossRef]

Livingstone, J.

J. Henry and J. Livingstone, “Improved position sensitive detectors using high resistivity substrates,” J. Phys. D Appl. Phys. 41(16), 165106 (2008).
[CrossRef]

J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
[CrossRef]

J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of Schottky barrier position-sensitive detectors as a function of light wavelength,” IEEE Sens. J. 3(4), 519–524 (2003).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” IEEE Sens. J. 2(4), 372–376 (2002).
[CrossRef]

J. Henry and J. Livingstone, “Thin-film amorphous silicon position-sensitive detectors,” Adv. Mater. 13(12–13), 1022–1026 (2001).
[CrossRef]

Lu, H.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Lu, H.-B.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Martins, R.

R. Martins and E. Fortunato, “Role of the resistive layer on the performances of 2D a-Si:H thin film position sensitive detectors,” Thin Solid Films 337(1–2), 158–162 (1999).
[CrossRef]

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2–3), 135–142 (1996).
[CrossRef]

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, “Thin film position sensitive detector based on amorphous silicon p–i–n diode,” Rev. Sci. Instrum. 65(12), 3784–3786 (1994).
[CrossRef]

Mazzeo, G.

S. Salvatori, G. Mazzeo, and G. Conte, “Voltage division position sensitive detectors based on photoconductive materials; Part I: Principle of operation,” IEEE Sens. J. 8(2), 188–193 (2008).
[CrossRef]

Meynadier, M. H.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Nahory, R. E.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Narayan, K. S.

D. Kabra, S. Shriram, N. S. Vidhyadhiraja, and K. S. Narayan, “Charge carrier dynamics in organic semiconductors by position dependent optical probing,” J. Appl. Phys. 101(6), 064510–064517 (2007).
[CrossRef]

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

Niknam, A. R.

A. R. Rastkar, A. R. Niknam, and B. Shokri, “Characterization of copper oxide nanolayers deposited by direct current magnetron sputtering,” Thin Solid Films 517(18), 5464–5467 (2009).
[CrossRef]

Peng, K. C.

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
[CrossRef]

Rastkar, A. R.

A. R. Rastkar, A. R. Niknam, and B. Shokri, “Characterization of copper oxide nanolayers deposited by direct current magnetron sputtering,” Thin Solid Films 517(18), 5464–5467 (2009).
[CrossRef]

Salvatori, S.

S. Salvatori, G. Mazzeo, and G. Conte, “Voltage division position sensitive detectors based on photoconductive materials; Part I: Principle of operation,” IEEE Sens. J. 8(2), 188–193 (2008).
[CrossRef]

Schmid, B. A.

R. Huber, B. A. Schmid, Y. R. Shen, D. S. Chemla, and R. A. Kaindl, “Stimulated terahertz emission from intraexcitonic transitions in Cu2O,” Phys. Rev. Lett. 96(1), 017402 (2006).
[CrossRef] [PubMed]

Schwartz, C. M.

A. P. Young and C. M. Schwartz, “Electrical conductivity and thermoelectric power of Cu2O,” J. Phys. Chem. Solids 30(2), 249–252 (1969).
[CrossRef]

Shen, Y. R.

R. Huber, B. A. Schmid, Y. R. Shen, D. S. Chemla, and R. A. Kaindl, “Stimulated terahertz emission from intraexcitonic transitions in Cu2O,” Phys. Rev. Lett. 96(1), 017402 (2006).
[CrossRef] [PubMed]

Shokri, B.

A. R. Rastkar, A. R. Niknam, and B. Shokri, “Characterization of copper oxide nanolayers deposited by direct current magnetron sputtering,” Thin Solid Films 517(18), 5464–5467 (2009).
[CrossRef]

Shriram, S.

D. Kabra, S. Shriram, N. S. Vidhyadhiraja, and K. S. Narayan, “Charge carrier dynamics in organic semiconductors by position dependent optical probing,” J. Appl. Phys. 101(6), 064510–064517 (2007).
[CrossRef]

Singh, T. B.

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

Soares, F.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2–3), 135–142 (1996).
[CrossRef]

Steiner, J. T.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

Tabatabaie, N.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Tsitsishvili, E.

M. Jörger, E. Tsitsishvili, T. Fleck, and C. Klingshirn, “Infrared absorption by excitons in Cu2O,” Phys. Status Solidi B 238(3), 470–473 (2003).
[CrossRef]

Tsu, R.

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
[CrossRef]

Vidhyadhiraja, N. S.

D. Kabra, S. Shriram, N. S. Vidhyadhiraja, and K. S. Narayan, “Charge carrier dynamics in organic semiconductors by position dependent optical probing,” J. Appl. Phys. 101(6), 064510–064517 (2007).
[CrossRef]

Vieira, M.

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, “Thin film position sensitive detector based on amorphous silicon p–i–n diode,” Rev. Sci. Instrum. 65(12), 3784–3786 (1994).
[CrossRef]

Volkmann, K.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

von Baltz, R.

M. Jörger, T. Fleck, C. Klingshirn, and R. von Baltz, “Midinfrared properties of cuprous oxide: high-order lattice vibrations and intraexcitonic transitions of the 1s paraexciton,” Phys. Rev. B 71(23), 235210 (2005).
[CrossRef]

Wallmark, J. T.

J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Proceedings of the Institute of Radio Engineers (IRE) 45(4), 474–483 (1957) (IRE).

Wang, H.

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112–141113 (2009).
[CrossRef]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[CrossRef] [PubMed]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si,” J. Phys. D Appl. Phys. 40(18), 5580–5583 (2007).
[CrossRef]

Wang, Z. H.

Willens, R. H.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Wolf, M.

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

Xia, Y. X.

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112–141113 (2009).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[CrossRef] [PubMed]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si,” J. Phys. D Appl. Phys. 40(18), 5580–5583 (2007).
[CrossRef]

Xiao, S. Q.

Yang, G.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Yang, G.-Z.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Young, A. P.

A. P. Young and C. M. Schwartz, “Electrical conductivity and thermoelectric power of Cu2O,” J. Phys. Chem. Solids 30(2), 249–252 (1969).
[CrossRef]

Yu, C. Q.

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112–141113 (2009).
[CrossRef]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

Zhao, K.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Zhao, Z. C.

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16(6), 3798–3806 (2008).
[CrossRef] [PubMed]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si,” J. Phys. D Appl. Phys. 40(18), 5580–5583 (2007).
[CrossRef]

Zhou, Q.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Zhou, Y.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

Adv. Mater.

J. Henry and J. Livingstone, “Thin-film amorphous silicon position-sensitive detectors,” Adv. Mater. 13(12–13), 1022–1026 (2001).
[CrossRef]

Appl. Phys. Lett.

K. Zhao, K. Jin, H. Lu, Y. Huang, Q. Zhou, M. He, Z. Chen, Y. Zhou, and G. Yang, “Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si,” Appl. Phys. Lett. 88(14), 141914 (2006).
[CrossRef]

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85(21), 5073–5075 (2004).
[CrossRef]

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

J. Cárabe, J. J. Gandia, N. Gonzalez, E. Galiano, and M. T. Gutierrez, “A simple amorphous-silicon photodetector for two-dimensional position sensing,” Appl. Phys. Lett. 69(22), 3408–3410 (1996).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

D. W. Boeringer and R. Tsu, “Lateral photovoltaic effect in porous silicon,” Appl. Phys. Lett. 65(18), 2332–2334 (1994).
[CrossRef]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112–141113 (2009).
[CrossRef]

IEEE Sens. J.

J. Henry and J. Livingstone, “Aging effects of Schottky barrier position sensitive detectors,” IEEE Sens. J. 6(6), 1557–1563 (2006).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of Schottky barrier position-sensitive detectors as a function of light wavelength,” IEEE Sens. J. 3(4), 519–524 (2003).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” IEEE Sens. J. 2(4), 372–376 (2002).
[CrossRef]

S. Salvatori, G. Mazzeo, and G. Conte, “Voltage division position sensitive detectors based on photoconductive materials; Part I: Principle of operation,” IEEE Sens. J. 8(2), 188–193 (2008).
[CrossRef]

J. Appl. Phys.

D. Kabra, S. Shriram, N. S. Vidhyadhiraja, and K. S. Narayan, “Charge carrier dynamics in organic semiconductors by position dependent optical probing,” J. Appl. Phys. 101(6), 064510–064517 (2007).
[CrossRef]

J. Phys. Chem. Solids

A. P. Young and C. M. Schwartz, “Electrical conductivity and thermoelectric power of Cu2O,” J. Phys. Chem. Solids 30(2), 249–252 (1969).
[CrossRef]

J. Phys. D Appl. Phys.

J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si,” J. Phys. D Appl. Phys. 40(18), 5580–5583 (2007).
[CrossRef]

J. Henry and J. Livingstone, “Improved position sensitive detectors using high resistivity substrates,” J. Phys. D Appl. Phys. 41(16), 165106 (2008).
[CrossRef]

Opt. Express

Phys. Rev. B

M. Jörger, T. Fleck, C. Klingshirn, and R. von Baltz, “Midinfrared properties of cuprous oxide: high-order lattice vibrations and intraexcitonic transitions of the 1s paraexciton,” Phys. Rev. B 71(23), 235210 (2005).
[CrossRef]

Phys. Rev. Lett.

R. Huber, B. A. Schmid, Y. R. Shen, D. S. Chemla, and R. A. Kaindl, “Stimulated terahertz emission from intraexcitonic transitions in Cu2O,” Phys. Rev. Lett. 96(1), 017402 (2006).
[CrossRef] [PubMed]

S. Leinss, T. Kampfrath, K. Volkmann, M. Wolf, J. T. Steiner, M. Kira, S. W. Koch, A. Leitenstorfer, and R. Huber, “Terahertz coherent control of optically dark paraexcitons in Cu2O,” Phys. Rev. Lett. 101(24), 246401 (2008).
[CrossRef]

Phys. Status Solidi B

M. Jörger, E. Tsitsishvili, T. Fleck, and C. Klingshirn, “Infrared absorption by excitons in Cu2O,” Phys. Status Solidi B 238(3), 470–473 (2003).
[CrossRef]

Proceedings of the Institute of Radio Engineers (IRE)

J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Proceedings of the Institute of Radio Engineers (IRE) 45(4), 474–483 (1957) (IRE).

Rev. Sci. Instrum.

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, “Thin film position sensitive detector based on amorphous silicon p–i–n diode,” Rev. Sci. Instrum. 65(12), 3784–3786 (1994).
[CrossRef]

Sens. Actuators A Phys.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, “Large-area 1D thin-film position-sensitive detector with high detection resolution,” Sens. Actuators A Phys. 51(2–3), 135–142 (1996).
[CrossRef]

Thin Solid Films

R. Martins and E. Fortunato, “Role of the resistive layer on the performances of 2D a-Si:H thin film position sensitive detectors,” Thin Solid Films 337(1–2), 158–162 (1999).
[CrossRef]

A. R. Rastkar, A. R. Niknam, and B. Shokri, “Characterization of copper oxide nanolayers deposited by direct current magnetron sputtering,” Thin Solid Films 517(18), 5464–5467 (2009).
[CrossRef]

J. H. Hsieh, P. W. Kuo, K. C. Peng, S. J. Liu, J. D. Hsueh, and S. C. Chang, “Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing,” Thin Solid Films 516(16), 5449–5453 (2008).
[CrossRef]

Other

J. Henry, and J. Livingstone, “High sensitivity optical position sensitive detectors fabricated from high resistivity substrates,” Proc. SPIE 7003, 70030K (2008).

J. Henry, and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” in Proceedings of IEEE Sensors (IEEE, 2002), pp. 836–840.

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Figures (4)

Fig. 1
Fig. 1

Dependence of LPV on the position of the laser spot with laser irradiated on the Cu2O surface and substrate. The top inset is AFM image of Cu2O film (The RMS value is 15. 098nm). The bottom inset displays the schematic setup for LPV measurement.

Fig. 2
Fig. 2

(a) Dependence of the LPV on the position of the laser spots position (x, y) on the Cu2O surface under laser irradiation. The inset shows a layout of sample with contacts A (2 mm, 0), B (−2 mm, 0) and laser spot (x, y). (b) A three-dimensional plot of the LPV distribution with the position of the laser spot.

Fig. 3
Fig. 3

The experimental results of LPV in the Cu2O surface, in which the distances between AB ( = 2L) are 4 mm, 5mm, 7 mm, 11mm and respectively.

Fig. 4
Fig. 4

Schematic of carriers diffusing in Cu2O film caused by temperature gradient. The bottom inset is the schematic for formation of infrared induced LPV.

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