Abstract

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm2). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to ~150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.

© 2010 OSA

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  1. S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Sensitive absorption spectroscopy by use of an asymmetric multiple-quantum-well diode laser in an external cavity,” Appl. Opt. 40(36), 6719–6724 (2001).
    [CrossRef]
  2. J. T. Olesberg, M. A. Arnold, C. Mermelstein, J. Schmitz, and J. Wagner, “Tunable laser diode system for noninvasive blood glucose measurements,” Appl. Spectrosc. 59(12), 1480–1484 (2005).
    [CrossRef]
  3. N. Kuramoto and K. Fujii, “Volume determination of a silicon sphere using an improved interferometer with optical frequency tuning,” IEEE Trans. Instrum. Meas. 54(2), 868–871 (2005).
    [CrossRef]
  4. T. Tanaka, Y. Hibino, T. Hashimoto, M. Abe, R. Kasahara, and Y. Tohmori, “100-GHz spacing 8-channel light source integrated with external cavity lasers on planar lightwave circuit platform,” J. Lightwave Technol. 22(2), 567–573 (2004).
    [CrossRef]
  5. S. R. Chinn, E. A. Swanson, and J. G. Fujimoto, “Optical coherence tomography using a frequency-tunable optical source,” Opt. Lett. 22(5), 340–342 (1997).
    [CrossRef] [PubMed]
  6. H. Lim, J. F. de Boer, B. H. Park, E. C. W. Lee, R. Yelin, and S. H. Yun, “Optical frequency domain imaging with a rapidly swept laser in the 815-870 nm range,” Opt. Express 14(13), 5937–5944 (2006).
    [CrossRef] [PubMed]
  7. C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
    [CrossRef]
  8. Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
    [CrossRef]
  9. L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
    [CrossRef]
  10. S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
    [CrossRef]
  11. X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
    [CrossRef]
  12. Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
    [CrossRef] [PubMed]
  13. M. Sugawara, K. Mukai, and Y. Nakata, “Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics,” Appl. Phys. Lett. 74(11), 1561–1563 (1999).
    [CrossRef]
  14. A. Kovsh, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, and A. Zhukov, “Quantum dot laser with 75 nm broad spectrum of emission,” Opt. Lett. 32(7), 793–795 (2007).
    [CrossRef] [PubMed]
  15. A. E. Zhukov and A. R. Kovsh, “Quantum dot diode lasers for optical communication systems,” Quantum Electron. 38(5), 409–423 (2008).
    [CrossRef]
  16. C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
    [CrossRef]
  17. P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
    [CrossRef]
  18. H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
    [CrossRef]
  19. P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
    [CrossRef]
  20. A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
    [CrossRef]
  21. C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
    [CrossRef]
  22. G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
    [CrossRef]
  23. A. Tierno and T. Ackemann, “Tunable, narrow-band light source in the 1.25 μm region based on broad-area quantum dot lasers with feedback,” Appl. Phys. B 89(4), 585–588 (2007).
    [CrossRef]
  24. A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
    [CrossRef]
  25. X. Q. Lü, P. Jin, and Z. G. Wang, “A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission,” Chin. Phys. B 19(1), 018104–4 (2010).
    [CrossRef]
  26. A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
    [CrossRef]
  27. H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett. 26(11), 742–743 (1990).
    [CrossRef]
  28. X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
    [CrossRef]
  29. S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Experimental analysis of a broadly tunable InGaAsP laser with compositionally varied quantum wells,” IEEE J. Quantum Electron. 39(3), 426–430 (2003).
    [CrossRef]

2010 (1)

X. Q. Lü, P. Jin, and Z. G. Wang, “A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission,” Chin. Phys. B 19(1), 018104–4 (2010).
[CrossRef]

2008 (5)

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[CrossRef]

A. E. Zhukov and A. R. Kovsh, “Quantum dot diode lasers for optical communication systems,” Quantum Electron. 38(5), 409–423 (2008).
[CrossRef]

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[CrossRef] [PubMed]

2007 (3)

A. Kovsh, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, and A. Zhukov, “Quantum dot laser with 75 nm broad spectrum of emission,” Opt. Lett. 32(7), 793–795 (2007).
[CrossRef] [PubMed]

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[CrossRef]

A. Tierno and T. Ackemann, “Tunable, narrow-band light source in the 1.25 μm region based on broad-area quantum dot lasers with feedback,” Appl. Phys. B 89(4), 585–588 (2007).
[CrossRef]

2006 (3)

S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
[CrossRef]

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

H. Lim, J. F. de Boer, B. H. Park, E. C. W. Lee, R. Yelin, and S. H. Yun, “Optical frequency domain imaging with a rapidly swept laser in the 815-870 nm range,” Opt. Express 14(13), 5937–5944 (2006).
[CrossRef] [PubMed]

2005 (4)

J. T. Olesberg, M. A. Arnold, C. Mermelstein, J. Schmitz, and J. Wagner, “Tunable laser diode system for noninvasive blood glucose measurements,” Appl. Spectrosc. 59(12), 1480–1484 (2005).
[CrossRef]

C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
[CrossRef]

N. Kuramoto and K. Fujii, “Volume determination of a silicon sphere using an improved interferometer with optical frequency tuning,” IEEE Trans. Instrum. Meas. 54(2), 868–871 (2005).
[CrossRef]

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[CrossRef]

2004 (2)

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[CrossRef]

T. Tanaka, Y. Hibino, T. Hashimoto, M. Abe, R. Kasahara, and Y. Tohmori, “100-GHz spacing 8-channel light source integrated with external cavity lasers on planar lightwave circuit platform,” J. Lightwave Technol. 22(2), 567–573 (2004).
[CrossRef]

2003 (2)

S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Experimental analysis of a broadly tunable InGaAsP laser with compositionally varied quantum wells,” IEEE J. Quantum Electron. 39(3), 426–430 (2003).
[CrossRef]

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

2001 (1)

2000 (3)

P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

1999 (1)

M. Sugawara, K. Mukai, and Y. Nakata, “Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics,” Appl. Phys. Lett. 74(11), 1561–1563 (1999).
[CrossRef]

1997 (2)

S. R. Chinn, E. A. Swanson, and J. G. Fujimoto, “Optical coherence tomography using a frequency-tunable optical source,” Opt. Lett. 22(5), 340–342 (1997).
[CrossRef] [PubMed]

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
[CrossRef]

1990 (2)

A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
[CrossRef]

H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett. 26(11), 742–743 (1990).
[CrossRef]

Abe, M.

Abstreiter, G.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Ackemann, T.

A. Tierno and T. Ackemann, “Tunable, narrow-band light source in the 1.25 μm region based on broad-area quantum dot lasers with feedback,” Appl. Phys. B 89(4), 585–588 (2007).
[CrossRef]

Allen, C. Ni.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
[CrossRef]

Amann, M.-C.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Arnold, M. A.

Arzberger, M.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Barrios, P.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
[CrossRef]

Beattie, M. D.

S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
[CrossRef]

Biebersdorf, A.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Böhm, G.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Bressel, U.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

Cassidy, D. T.

S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Experimental analysis of a broadly tunable InGaAsP laser with compositionally varied quantum wells,” IEEE J. Quantum Electron. 39(3), 426–430 (2003).
[CrossRef]

S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Sensitive absorption spectroscopy by use of an asymmetric multiple-quantum-well diode laser in an external cavity,” Appl. Opt. 40(36), 6719–6724 (2001).
[CrossRef]

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
[CrossRef]

Chia, C. K.

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[CrossRef]

Chinn, S. R.

Chua, S. J.

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[CrossRef]

Dalacu, D.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

Davies, M.

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
[CrossRef]

de Boer, J. F.

De Giorgi, M.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Dimas, C. E.

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

Ding, Y. H.

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

Dion, C.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

Djie, H. S.

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

Dong, J. R.

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[CrossRef]

Eisele, Ch.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

Eliseev, P.

P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

Ernsting, I.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

Fafard, S.

C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
[CrossRef]

Feldmann, J.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Fiore, A.

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[CrossRef]

Fuchs, B.

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

Fujii, K.

N. Kuramoto and K. Fujii, “Volume determination of a silicon sphere using an improved interferometer with optical frequency tuning,” IEEE Trans. Instrum. Meas. 54(2), 868–871 (2005).
[CrossRef]

Fujimoto, J. G.

Groom, K. M.

S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
[CrossRef]

Gubenko, A.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

Hamp, M. J.

S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Experimental analysis of a broadly tunable InGaAsP laser with compositionally varied quantum wells,” IEEE J. Quantum Electron. 39(3), 426–430 (2003).
[CrossRef]

S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Sensitive absorption spectroscopy by use of an asymmetric multiple-quantum-well diode laser in an external cavity,” Appl. Opt. 40(36), 6719–6724 (2001).
[CrossRef]

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
[CrossRef]

Hashimoto, T.

Hibino, Y.

Hogg, R. A.

Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[CrossRef] [PubMed]

S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
[CrossRef]

Hongpinyo, V.

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

Hopkinson, M.

S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
[CrossRef]

Ishikawa, H.

H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett. 26(11), 742–743 (1990).
[CrossRef]

Jin, P.

X. Q. Lü, P. Jin, and Z. G. Wang, “A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission,” Chin. Phys. B 19(1), 018104–4 (2010).
[CrossRef]

X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[CrossRef]

Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[CrossRef] [PubMed]

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[CrossRef]

Kasahara, R.

Kovsh, A.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

A. Kovsh, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, and A. Zhukov, “Quantum dot laser with 75 nm broad spectrum of emission,” Opt. Lett. 32(7), 793–795 (2007).
[CrossRef] [PubMed]

Kovsh, A. R.

A. E. Zhukov and A. R. Kovsh, “Quantum dot diode lasers for optical communication systems,” Quantum Electron. 38(5), 409–423 (2008).
[CrossRef]

Krestnikov, I.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

A. Kovsh, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, and A. Zhukov, “Quantum dot laser with 75 nm broad spectrum of emission,” Opt. Lett. 32(7), 793–795 (2007).
[CrossRef] [PubMed]

Kuramoto, N.

N. Kuramoto and K. Fujii, “Volume determination of a silicon sphere using an improved interferometer with optical frequency tuning,” IEEE Trans. Instrum. Meas. 54(2), 868–871 (2005).
[CrossRef]

Lapointe, J.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

Lee, E. C. W.

Lester, L. F.

P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

Li, H.

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

Li, L. H.

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[CrossRef]

Lidgard, A.

A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
[CrossRef]

Lim, H.

Lingk, C.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Liu, F. Q.

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[CrossRef]

Liu, G. T.

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

Liu, H. Y.

S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
[CrossRef]

Liu, N.

X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[CrossRef]

Livshits, D.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

A. Kovsh, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, and A. Zhukov, “Quantum dot laser with 75 nm broad spectrum of emission,” Opt. Lett. 32(7), 793–795 (2007).
[CrossRef] [PubMed]

Logan, R. A.

A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
[CrossRef]

Lü, X. Q.

X. Q. Lü, P. Jin, and Z. G. Wang, “A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission,” Chin. Phys. B 19(1), 018104–4 (2010).
[CrossRef]

Lv, X. Q.

X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[CrossRef]

Malloy, K. J.

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

Marshall, P.

C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
[CrossRef]

Mermelstein, C.

Mikhrin, S.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

A. Kovsh, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, and A. Zhukov, “Quantum dot laser with 75 nm broad spectrum of emission,” Opt. Lett. 32(7), 793–795 (2007).
[CrossRef] [PubMed]

Mukai, K.

M. Sugawara, K. Mukai, and Y. Nakata, “Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics,” Appl. Phys. Lett. 74(11), 1561–1563 (1999).
[CrossRef]

Nakata, Y.

M. Sugawara, K. Mukai, and Y. Nakata, “Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics,” Appl. Phys. Lett. 74(11), 1561–1563 (1999).
[CrossRef]

Nevsky, A. Yu.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

Newell, T. C.

P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

Occhi, L.

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[CrossRef]

Okhapkin, M.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

Olesberg, J. T.

Olsson, N. A.

A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
[CrossRef]

Ooi, B. S.

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

Ortner, G.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

Pakulski, G.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
[CrossRef]

Park, B. H.

Poitras, D.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

Poole, P. J.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
[CrossRef]

Ray, S. K.

S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
[CrossRef]

Raymond, S.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

C. Ni. Allen, P. J. Poole, P. Barrios, P. Marshall, G. Pakulski, S. Raymond, and S. Fafard, “External cavity quantum dot tunable laser through 1.55 μm,” Physica E 26, 372–376 (2005).
[CrossRef]

Render, W.

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
[CrossRef]

Robinson, B. J.

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
[CrossRef]

Rossetti, M.

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[CrossRef]

Sacher, J.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Schiller, S.

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

Schmitz, J.

Stintz, A.

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

Sugawara, M.

M. Sugawara, K. Mukai, and Y. Nakata, “Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics,” Appl. Phys. Lett. 74(11), 1561–1563 (1999).
[CrossRef]

Sun, Z. Z.

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[CrossRef]

Swanson, E. A.

Tabuchi, H.

H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett. 26(11), 742–743 (1990).
[CrossRef]

Tan, C. L.

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

Tanaka, T.

Tanbun-Ek, T.

A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
[CrossRef]

Temkin, H.

A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
[CrossRef]

Teo, S. L.

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo, “Ultrawide band quantum dot light emitting device by postfabrication laser annealing,” Appl. Phys. Lett. 90(6), 061101 (2007).
[CrossRef]

Thompson, D. A.

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
[CrossRef]

Tierno, A.

A. Tierno and T. Ackemann, “Tunable, narrow-band light source in the 1.25 μm region based on broad-area quantum dot lasers with feedback,” Appl. Phys. B 89(4), 585–588 (2007).
[CrossRef]

Tohmori, Y.

Ulbrich, C.

A. Biebersdorf, C. Lingk, M. De Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M.-C. Amann, and G. Abstreiter, “Tunable single and dual mode operation of an external cavity quantum-dot injection laser,” J. Phys. D Appl. Phys. 36(16), 1928–1930 (2003).
[CrossRef]

Varangis, P. M.

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[CrossRef]

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

Velez, C.

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
[CrossRef]

Wagner, J.

Wang, Y.

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

Wang, Z. G.

X. Q. Lü, P. Jin, and Z. G. Wang, “A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission,” Chin. Phys. B 19(1), 018104–4 (2010).
[CrossRef]

X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[CrossRef]

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[CrossRef]

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A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
[CrossRef]

Weimert, J.

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S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Experimental analysis of a broadly tunable InGaAsP laser with compositionally varied quantum wells,” IEEE J. Quantum Electron. 39(3), 426–430 (2003).
[CrossRef]

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[CrossRef]

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Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[CrossRef] [PubMed]

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[CrossRef]

Yelin, R.

Yun, S. H.

Zhang, Z. Y.

Z. Y. Zhang, R. A. Hogg, B. Xu, P. Jin, and Z. G. Wang, “Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process,” Opt. Lett. 33(11), 1210–1212 (2008).
[CrossRef] [PubMed]

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[CrossRef]

Zhao, Q. C.

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
[CrossRef]

Zhu, X.

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
[CrossRef]

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Zhukov, A. E.

A. E. Zhukov and A. R. Kovsh, “Quantum dot diode lasers for optical communication systems,” Quantum Electron. 38(5), 409–423 (2008).
[CrossRef]

Appl. Opt. (1)

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A. Tierno and T. Ackemann, “Tunable, narrow-band light source in the 1.25 μm region based on broad-area quantum dot lasers with feedback,” Appl. Phys. B 89(4), 585–588 (2007).
[CrossRef]

A. Yu. Nevsky, U. Bressel, I. Ernsting, Ch. Eisele, M. Okhapkin, S. Schiller, A. Gubenko, D. Livshits, S. Mikhrin, I. Krestnikov, and A. Kovsh, “A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges,” Appl. Phys. B 92(4), 501–507 (2008).
[CrossRef]

Appl. Phys. Lett. (5)

A. Lidgard, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. W. Wecht, and N. A. Olsson, “External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range,” Appl. Phys. Lett. 56(9), 816–817 (1990).
[CrossRef]

G. Ortner, C. Ni. Allen, C. Dion, P. Barrios, D. Poitras, D. Dalacu, G. Pakulski, J. Lapointe, P. J. Poole, W. Render, and S. Raymond, “External cavity InAs/InP quantum dot laser with a tuning range of 166 nm,” Appl. Phys. Lett. 88(12), 121119 (2006).
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[CrossRef]

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser,” Appl. Phys. Lett. 93(11), 111101 (2008).
[CrossRef]

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[CrossRef]

Appl. Spectrosc. (1)

Chin. Phys. B (1)

X. Q. Lü, P. Jin, and Z. G. Wang, “A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission,” Chin. Phys. B 19(1), 018104–4 (2010).
[CrossRef]

Electron. Lett. (3)

H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett. 26(11), 742–743 (1990).
[CrossRef]

P. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “Low-threshold quantum dot lasers with 201 nm tuning range,” Electron. Lett. 36(18), 1544–1545 (2000).
[CrossRef]

L. H. Li, M. Rossetti, A. Fiore, L. Occhi, and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron. Lett. 41(1), 41–43 (2005).
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P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, “Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode,” IEEE J. Quantum Electron. 36(4), 479–485 (2000).
[CrossRef]

S. C. Woodworth, D. T. Cassidy, and M. J. Hamp, “Experimental analysis of a broadly tunable InGaAsP laser with compositionally varied quantum wells,” IEEE J. Quantum Electron. 39(3), 426–430 (2003).
[CrossRef]

IEEE Photon. Technol. Lett. (5)

H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, “150-nm tuning range in a grating-coupled external cavity quantum-dot laser,” IEEE Photon. Technol. Lett. 12(7), 759–761 (2000).
[CrossRef]

Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, “High-performance quantum-dot superluminescent diodes,” IEEE Photon. Technol. Lett. 16(1), 27–29 (2004).
[CrossRef]

S. K. Ray, K. M. Groom, M. D. Beattie, H. Y. Liu, M. Hopkinson, and R. A. Hogg, “Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett. 18(1), 58–60 (2006).
[CrossRef]

X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix,” IEEE Photon. Technol. Lett. 20(20), 1742–1744 (2008).
[CrossRef]

X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, and M. Davies, “1.4-μm InGaAsP–InP strained multiple-quantum-well laser for broad-wavelength tunability,” IEEE Photon. Technol. Lett. 9(9), 1202–1204 (1997).
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J. Phys. D Appl. Phys. (1)

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Opt. Express (1)

Opt. Lett. (3)

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A. E. Zhukov and A. R. Kovsh, “Quantum dot diode lasers for optical communication systems,” Quantum Electron. 38(5), 409–423 (2008).
[CrossRef]

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Figures (4)

Fig. 1
Fig. 1

Current-injection emission spectra of the free-running QD gain devices with (a) 1 mm, (b) 2 mm and (c) 3 mm cavity length under various injection current densities. Some spectra are shifted vertically for clarity. The inset of (a) gives a 3-peak Gaussian fitting of the emission spectrum at 833 A/cm2 injection, presenting the GS, the 1st and the 2nd ESs transitions simultaneously.

Fig. 2
Fig. 2

Lasing spectra of grating-coupled EC lasers with InAs/GaAs QD gain devices of (a) 1 mm, (b) 2 mm and (c) 3 mm cavity length. No coating was applied on the facets. The inset of (c) shows the experimental setup (Littrow configuration). The emitting directly from the gain device is used for the spectra and power measurements.

Fig. 3
Fig. 3

Threshold current density as a function of the tuning wavelength for QD gain device with different cavity length.

Fig. 4
Fig. 4

Output power of the QD-EC lasers as a function of tuning wavelength for QD gain devices with different cavity length. No coating was applied on the facets. For the L = 1mm device, the injection is pulsed and the output power is the peak one.

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