Abstract

Numerical method on the heterodyne terahertz detection characteristics of field effect transistors is studied in this paper which is based on the hydrodynamic equations which govern the terahertz signal transport in field effect transistors (FETs). A modification is made in an existed numerical tool established by our group by coupling the heterodyne characteristics. This modified numerical tool work well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. And the results are used to demonstrate the potential for using MOS transistors as THz detectors and investigate the optimization of the device structure.

© 2010 OSA

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  1. M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
    [CrossRef] [PubMed]
  2. M. Dyakonov and M. Shur, “Detection, Mixing, and Frequency Multilication of Terahertz Radiation by Two-Dimensional Electronic Fluid,” IEEE Trans. Electron. Dev. 43(3), 380–387 (1996).
    [CrossRef]
  3. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
    [CrossRef]
  4. A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
    [CrossRef]
  5. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
    [CrossRef]
  6. R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
    [CrossRef]
  7. M. Dyakonov and M. S. Shur, “Current instability and plasma waves generation in ungated two-dimensional electron layers,” Appl. Phys. Lett. 87(11), 111501 (2005).
    [CrossRef]
  8. D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
    [CrossRef]
  9. V. Yu. Kachorovskii and M. S. Shur, “Field Effect Transistor as ultrafast detector of modulated terahertz radiation,” Solid-State Electronics , (2007).
  10. D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
    [CrossRef]
  11. X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).
  12. Y. Wang, Y. Chen, F. He, X. Mou, and C. Ma, “Numerical Study on Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal,” IEEE ELECTRO-2009, India, (2009).
  13. B. Gershgorin, V. Yu. Kachorovskii, Y. V. Lvov, and M. S. Shur, “Field effect transistor as heterodyne terahertz detector,” Electron. Lett. 44(17), 1036 (2008).
    [CrossRef]
  14. H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
    [CrossRef]

2010 (1)

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

2009 (1)

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

2008 (2)

X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).

B. Gershgorin, V. Yu. Kachorovskii, Y. V. Lvov, and M. S. Shur, “Field effect transistor as heterodyne terahertz detector,” Electron. Lett. 44(17), 1036 (2008).
[CrossRef]

2007 (1)

V. Yu. Kachorovskii and M. S. Shur, “Field Effect Transistor as ultrafast detector of modulated terahertz radiation,” Solid-State Electronics , (2007).

2006 (3)

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
[CrossRef]

2005 (1)

M. Dyakonov and M. S. Shur, “Current instability and plasma waves generation in ungated two-dimensional electron layers,” Appl. Phys. Lett. 87(11), 111501 (2005).
[CrossRef]

2004 (1)

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

2002 (1)

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

1996 (1)

M. Dyakonov and M. Shur, “Detection, Mixing, and Frequency Multilication of Terahertz Radiation by Two-Dimensional Electronic Fluid,” IEEE Trans. Electron. Dev. 43(3), 380–387 (1996).
[CrossRef]

1993 (1)

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[CrossRef] [PubMed]

Boeuf, F.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

Boubanga, S.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Boubanga Tombet, S.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Brunel, L. C.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Cappy, A.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Chen, Y.

X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).

X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).

Chusseau, L.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Coquillat, D.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Deng, Y.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Dmitriev, A.

D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
[CrossRef]

Dyakonov, M.

M. Dyakonov and M. S. Shur, “Current instability and plasma waves generation in ungated two-dimensional electron layers,” Appl. Phys. Lett. 87(11), 111501 (2005).
[CrossRef]

M. Dyakonov and M. Shur, “Detection, Mixing, and Frequency Multilication of Terahertz Radiation by Two-Dimensional Electronic Fluid,” IEEE Trans. Electron. Dev. 43(3), 380–387 (1996).
[CrossRef]

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[CrossRef] [PubMed]

Dyakonova, N.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

El Fatimy, A.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Elkhatib, T. A.

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

Fareed, Q.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Fenouillet-Beranger, C.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Gallon, C.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Gaquiere, C.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Gaska, R.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Gershgorin, B.

B. Gershgorin, V. Yu. Kachorovskii, Y. V. Lvov, and M. S. Shur, “Field effect transistor as heterodyne terahertz detector,” Electron. Lett. 44(17), 1036 (2008).
[CrossRef]

Gruzinskis, V.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

He, J.

X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).

Hu, X.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Kachorovskii, V.

D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Kachorovskii, V. Yu.

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

B. Gershgorin, V. Yu. Kachorovskii, Y. V. Lvov, and M. S. Shur, “Field effect transistor as heterodyne terahertz detector,” Electron. Lett. 44(17), 1036 (2008).
[CrossRef]

V. Yu. Kachorovskii and M. S. Shur, “Field Effect Transistor as ultrafast detector of modulated terahertz radiation,” Solid-State Electronics , (2007).

Khan, M. A.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Knap, W.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
[CrossRef]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Lu, J. Q.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Lusakowski, J.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

Lvov, Y. V.

B. Gershgorin, V. Yu. Kachorovskii, Y. V. Lvov, and M. S. Shur, “Field effect transistor as heterodyne terahertz detector,” Electron. Lett. 44(17), 1036 (2008).
[CrossRef]

Ma, C.

X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).

Marinchio, H.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Maude, D.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

Maude, D. K.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Meziani, Y.

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

Meziani, Y. M.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Mou, X.

X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).

Muravjov, A. V.

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

Nouvel, P.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Pala, N.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Palermo, C.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Rumyantsev, S.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Sabatatini, G.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Salama, K. N.

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

Saylor, C. A.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Seliuta, D.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Shiktorov, P.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Shur, M.

D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
[CrossRef]

M. Dyakonov and M. Shur, “Detection, Mixing, and Frequency Multilication of Terahertz Radiation by Two-Dimensional Electronic Fluid,” IEEE Trans. Electron. Dev. 43(3), 380–387 (1996).
[CrossRef]

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[CrossRef] [PubMed]

Shur, M. S.

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

B. Gershgorin, V. Yu. Kachorovskii, Y. V. Lvov, and M. S. Shur, “Field effect transistor as heterodyne terahertz detector,” Electron. Lett. 44(17), 1036 (2008).
[CrossRef]

V. Yu. Kachorovskii and M. S. Shur, “Field Effect Transistor as ultrafast detector of modulated terahertz radiation,” Solid-State Electronics , (2007).

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

M. Dyakonov and M. S. Shur, “Current instability and plasma waves generation in ungated two-dimensional electron layers,” Appl. Phys. Lett. 87(11), 111501 (2005).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Simin, G.

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Skotnicki, T.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

Starikov, E.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Tauk, R.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

Teppe, F.

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
[CrossRef]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

Theron, D.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Torres, J.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Valusis, G.

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Varani, L.

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Veksler, D.

D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
[CrossRef]

Veksler, D. B.

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

Zhang, X.-C.

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

Appl. Phys. Lett. (4)

W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675 (2004).
[CrossRef]

R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of terahertz radiation by silicon Field Effects Transistors: Responsivity and Noise Equivalent Power,” Appl. Phys. Lett. 89(25), 253511 (2006).
[CrossRef]

M. Dyakonov and M. S. Shur, “Current instability and plasma waves generation in ungated two-dimensional electron layers,” Appl. Phys. Lett. 87(11), 111501 (2005).
[CrossRef]

H. Marinchio, L. Chusseau, J. Torres, P. Nouvel, L. Varani, G. Sabatatini, C. Palermo, P. Shiktorov, E. Starikov, and V. Gruzinskis, “Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor,” Appl. Phys. Lett. 96, 013502 (2010).
[CrossRef]

Electron. Lett. (2)

B. Gershgorin, V. Yu. Kachorovskii, Y. V. Lvov, and M. S. Shur, “Field effect transistor as heterodyne terahertz detector,” Electron. Lett. 44(17), 1036 (2008).
[CrossRef]

A. El Fatimy, S. Boubanga Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron, and A. Cappy, “Terahertz detection by GaN/AlGaN transistors,” Electron. Lett. 42(23), 1342 (2006).
[CrossRef]

IEEE ICSICT (1)

X. Mou, Y. Chen, C. Ma, Y. Chen, and J. He, “A Numerical Method to Simulate THz-Wave Generation and Detection of Field-Effect Transistors,” IEEE ICSICT , 396–399 (2008).

IEEE Trans. Electron. Dev. (1)

M. Dyakonov and M. Shur, “Detection, Mixing, and Frequency Multilication of Terahertz Radiation by Two-Dimensional Electronic Fluid,” IEEE Trans. Electron. Dev. 43(3), 380–387 (1996).
[CrossRef]

J. Appl. Phys. (1)

W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J. Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. A. Khan, C. A. Saylor, and L. C. Brunel, “Nonresonant detection of terahertz radiation in field effect transistors,” J. Appl. Phys. 91(11), 9346 (2002).
[CrossRef]

Phys. Rev. B (1)

D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, and M. Shur, “Detection of terahertz radiation in gated two-dimensional structures governed by dc current,” Phys. Rev. B 73(12), 125328 (2006).
[CrossRef]

Phys. Rev. Lett. (1)

M. Dyakonov and M. Shur, “Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current,” Phys. Rev. Lett. 71(15), 2465–2468 (1993).
[CrossRef] [PubMed]

Solid-State Electron. (1)

D. B. Veksler, A. V. Muravjov, V. Yu. Kachorovskii, T. A. Elkhatib, K. N. Salama, X.-C. Zhang, and M. S. Shur, “Imaging of field-effect transistors by focused terahertz radiation,” Solid-State Electron. 53(6), 571–573 (2009).
[CrossRef]

Solid-State Electronics (1)

V. Yu. Kachorovskii and M. S. Shur, “Field Effect Transistor as ultrafast detector of modulated terahertz radiation,” Solid-State Electronics , (2007).

Other (1)

Y. Wang, Y. Chen, F. He, X. Mou, and C. Ma, “Numerical Study on Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal,” IEEE ELECTRO-2009, India, (2009).

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Figures (6)

Fig. 1
Fig. 1

Schematic geometry of an N type MOSFET operating in detector mode

Fig. 2
Fig. 2

(a) Source-to-drain voltage V ds (t) (b) Amplitude-frequency characteristic of source-to-drain voltage

Fig. 3
Fig. 3

(a) Comparison between the results from simulation and existing theory (b) Amplitude of the photoresponse

Fig. 4
Fig. 4

(a) Photoresponse as a function of the time for four different gate biases (b) Time delay and amplitude of photoresponse

Fig. 5
Fig. 5

(a) Photoresponse of different electron mobility (b) Time delay and amplitude of photoresponse

Fig. 6
Fig. 6

(a) Amplitude of the photoresponse as a function of gate bias for four different gate leakage current densities (b) Amplitude of the photoresponse as a function of gate bias in three different temperatures

Equations (11)

Equations on this page are rendered with MathJax. Learn more.

V ch (0,t)= U osc (t)
n s t + ( n s V) x = j g e
V t +V V x + V τ m + e m V ch x =0
n= n * ln[ 1+exp( e(U- V ch ) η k B T ) ],       n * =Cη k B T/e
n τ + (nv) η j=0 v τ +v v η = v ch η v τ m '
q 1 = v ch , q 2 =nv
F 1 ( q 1 , q 2 )=[ n q 2 n ], F 2 ( q 1 , q 2 )=[ q 2 q 2 2 2 n 2 q 1 ],G( q 1 , q 2 )=[ j q 2 n τ m ' ]
( F 1 ) k n+1 ( F 1 ) k n Δτ + ( F 2 ) k+1 n+1 ( F 2 ) k1 n+1 2Δη + (G) k n+1 =0
( F 1,2 ) 1 n+1 ( F 1,2 ) 1 n Δτ + ( F 2,2 ) 2 n+1 ( F 2,2 ) 1 n+1 Δη + ( G 2 ) 1 n+1 =0
( F 1,1 ) N+1 n+1 ( F 1,1 ) N+1 n Δτ + ( F 2,1 ) N+1 n+1 ( F 2,1 ) N n+1 Δη =0
V ds (t)= V DS +δ V b (Ω+w)cos[ 2π( Ω+w )t+ ϕ b ( Ω+w ) ]             +δ V a (w)cos[ 2πwt+ ϕ a ( w ) ]+ ΔV (w,w+Ω)              +δ V m (w,Ω+w)cos[ 2πΩt+ ϕ m [ w,( Ω+w ) ] ]

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