Abstract

A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

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Figures (6)

Fig. 1
Fig. 1

Schematic of QD states and carrier transitions of InAs/GaAs QD-SOA.

Fig. 2
Fig. 2

Schematic of QD-SOA Mach-Zehnder interferometer. BPF: bandpass filter

Fig. 3
Fig. 3

Simulation results of XOR gates operating at different bit-rates: (a) 40 Gb/s, (b) 250 Gb/s, inset is the simulated eye-diagram of each output wave form. J=1.8 kA/cm2, pulse width=2.5ps, pulse energy=0.5pJ.

Fig. 4
Fig. 4

Simulated result of AND gate and NOT gate operating at 250 Gb/s. J=1.8 kA/cm2, pulse width=2.5ps, pulse energy=0.5pJ.

Fig. 5
Fig. 5

The dependence of quality factor Q’s on pulse width and injected current density, single pulse energy is 0.5 pJ. (a): 250 Gb/s XOR operation (b): 160 Gb/s operation

Fig. 6
Fig. 6

Calculated Q factor dependence on (a): single pulse energy (b): ES to GS transition lifetime operation bit-rate is 250 Gb/s and current density J=1.8 kA/cm2

Equations (6)

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d w d t = I e V N w m w τ w r w τ w e ( 1 h ) + N e s m N w m h τ e w ( 1 w )
d h d t = h τ e s r + N w m N e s m w τ w e ( 1 h ) h τ e w ( 1 w ) + N g s m N e s m f τ g e ( 1 h ) h τ e g ( 1 f )
d f d t = f τ g s r f τ g e ( 1 h ) + N e s m N g s m h τ e g ( 1 f ) Γ d A d a ( 2 f 1 ) 1 N g s m S ( t ) ω
g ( t ) = a ( N N t ) 1 + ( ε C H + ε S H B ) S ( t )
ϕ ( t ) = 1 2 [ α G l ( t ) + α C H Δ G C H ( t ) ]
P o u t ( t ) = P c b ( t ) 4 [ G 1 ( t ) + G 2 ( t ) 2 G 1 ( t ) G 2 ( t ) ) cos ( ϕ 1 ( t ) ϕ 2 ( t ) ) ]

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