Abstract

An integrated reconfigurable four-channel wavelength-division-multiplexed drop module for use in the long-wavelength was demonstrated using a tunable wavelength-selective photodetector array. The array consists of an InP-based p-i-n absorption structure and a GaAs-based multistep Fabry-Pérot filtering cavity. The high quality GaAs/InP heteroepitaxy was realized by employing a thin low temperature buffer layer. The GaAs-based multistep cavity was fabricated by wet etching and regrowth. The dropped central wavelengths were 1538, 1550, 1559, and 1570nm. The tunable range reached 10nm with a tuning power efficiency of 14.2nm/W. A spectral linewidth less than 0.5nm (FWHM), a 3dB bandwidth of 9.2GHz, and the peak quantum efficiencies from 13% to 20% were simultaneously obtained, in agreement with the theoretical simulation.

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  1. B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, and R. M. Potemski, “Tapered Fabry-Pérot waveguide optical demultiplexer,” IEEE Photon. Technol. Lett. 5(9), 1082–1085 (1993).
    [CrossRef]
  2. B. Pezeshki, F. F. Tong, J. A. Kash, and D. W. Kisker, “Vertical cavity devices as wavelength selective waveguides,” J. Lightwave Technol. 12(10), 1791–1801 (1994).
    [CrossRef]
  3. K. Takahashi, Y. Kanamori, Y. Kokubun, and K. Hane, “A wavelength-selective add-drop switch using silicon microring resonator with a submicron-comb electrostatic actuator,” Opt. Express 16(19), 14421–14428 (2008), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-19-14421 .
    [CrossRef] [PubMed]
  4. E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
    [CrossRef]
  5. J. Takayesu, M. Hochberg, T. Baehr-Jones, E. Chan, P. Guangxi Wang, Sullivan, J. Yi Liao, L. Davies, A. Dalton, Scherer, and W. Krug, “A Hybrid Electrooptic Microring Resonator-Based $1 \times 4\times 1$ ROADM for Wafer Scale Optical Interconnects,” J. Lightwave Technol. 27(4), 440–448 (2009).
    [CrossRef]
  6. K. T. Shiu, S. S. Agashe, and S. R. Forrest, “An InP-based monolithically integrated reconfigurable optical add-drop multiplexer,” IEEE Photon. Technol. Lett. 19(19), 1445–1447 (2007).
    [CrossRef]
  7. C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
    [CrossRef]
  8. H. Huang, X. Ren, J. Lv, Q. Wang, H. Song, S. Cai, Y. Huang, and B. Qu, “Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector,” J. Appl. Phys. 104(11), 113114 (2008).
    [CrossRef]
  9. J. Lv, H. Huang, X. Ren, A. Miao, Y. Li, H. Song, Q. Wang, Y. Huang, and S. Cai, “Monolithically integrated long-wavelength tunable photodetector,” J. Lightwave Technol. 26(3), 338–342 (2008).
    [CrossRef]
  10. X. Duan, Y. Huang, H. Huang, X. Ren, Q. Wang, Y. Shang, X. Ye, and S. Cai, “Monolithically integrated photodetector array with a multistep cavity for multiwavelength receiving applications,” J. Lightwave Technol. 27(21), 4697–4702 (2009).
    [CrossRef]
  11. I. Christiaens, G. Roelkens, K. D. Mesel, D. V. Thourhout, and R. Baets, “Thin-Film Devices Fabricated With Benzocyclobutene Adhesive Wafer Bonding,” J. Lightwave Technol. 23(2), 517–523 (2005).
    [CrossRef]
  12. V. Passaro, F. Magno, and A. Tsarev, “Investigation of thermo-optic effect and multi-reflector tunable filter/multiplexer in SOI waveguides,” Opt. Express 13(9), 3429–3437 (2005), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-9-3429 .
    [CrossRef] [PubMed]
  13. T. Chu, H. Yamada, A. Gomyo, A. Ushida, S. Ishida, and Y. Arakawa, “Integrated Reconfigurable Optical Add-Drop Multiplexer (R-OADM) based on Silicon Nano-Photonic Waveguides,” in Proceedings of the 3rd IEEE International Conference on Group IV Photonics, 261–263 (2006).
  14. H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
    [CrossRef]
  15. M. S. Ünlü and S. Strite, “Resonant cavity enhanced photonic devices,” Appl. Phys. (Berl.) 78, 607–639 (1995).
    [CrossRef]
  16. I. Kimukin, N. Biyikli, and E. Ozbay, “High-performance 1.55 micron resonant cavity enhanced photodetector,” in Optical Fiber Communications Conference, A. Sawchuk, ed., Vol. 70 of OSA Trends in Optics and Photonics (Optical Society of America, 2002), paper TuW6, http://www.opticsinfobase.org/abstract.cfm?URI=OFC-2002-TuW6 .
  17. A. Beling and J. C. Campbell, “InP-Based High-Speed Photodetectors,” J. Lightwave Technol. 27(3), 343–355 (2009).
    [CrossRef]
  18. L. Domash, M. Wu, N. Nemchuk, and E. Ma, “Tunable and switchable Multiple-Cavity Thin Film Filters,” J. Lightwave Technol. 22(1), 126–135 (2004).
    [CrossRef]
  19. H. Huang, X. Ren, X. Wang, H. Cui, W. Wang, A. Miao, Y. Li, Q. Wang, and Y. Huang, “Theory and experiments of a tunable wavelength-selective photodetector based on a taper cavity,” Appl. Opt. 45(33), 8448–8453 (2006), http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-45-33-8448 .
    [CrossRef] [PubMed]
  20. A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
    [CrossRef]
  21. M. V. Kotlyar, L. O’Faolain, A. B. Krysa, and T. F. Krauss, “Electrically tunable multiquantum-well InGaAsP-InGaAsP microphotonic filter,” IEEE Photon. Technol. Lett. 17(4), 837–839 (2005).
    [CrossRef]
  22. K. Kato, “Ultrawide-band/high-frequency photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1265–1281 (1999).
    [CrossRef]
  23. W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, “A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 9(10), 1388–1390 (1997).
    [CrossRef]
  24. J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
    [CrossRef]
  25. H. Pan, Z. Li, A. Beling, and J. C. Campbell, “Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber,” Opt. Express 17(22), 20221–20226 (2009), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-22-20221 .
    [CrossRef] [PubMed]
  26. A. Wakatsuki, T. Furuta, Y. Muramoto, and T. Ishibashi, “High-Speed Photodiode and Optical Receiver Technologies,” in Optical Fiber Communication Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper OMK1, http://www.opticsinfobase.org/abstract.cfm?URI=OFC-2009-OMK1 .
  27. J. Kim, S. Kanakaraju, W. B. Johnson, and C. H. Lee, “Uni-Traveling Carrier Phototransistor,” in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CMQQ1, http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2009-CMQQ1 .

2009 (4)

2008 (3)

2007 (1)

K. T. Shiu, S. S. Agashe, and S. R. Forrest, “An InP-based monolithically integrated reconfigurable optical add-drop multiplexer,” IEEE Photon. Technol. Lett. 19(19), 1445–1447 (2007).
[CrossRef]

2006 (1)

2005 (4)

I. Christiaens, G. Roelkens, K. D. Mesel, D. V. Thourhout, and R. Baets, “Thin-Film Devices Fabricated With Benzocyclobutene Adhesive Wafer Bonding,” J. Lightwave Technol. 23(2), 517–523 (2005).
[CrossRef]

V. Passaro, F. Magno, and A. Tsarev, “Investigation of thermo-optic effect and multi-reflector tunable filter/multiplexer in SOI waveguides,” Opt. Express 13(9), 3429–3437 (2005), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-9-3429 .
[CrossRef] [PubMed]

E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
[CrossRef]

M. V. Kotlyar, L. O’Faolain, A. B. Krysa, and T. F. Krauss, “Electrically tunable multiquantum-well InGaAsP-InGaAsP microphotonic filter,” IEEE Photon. Technol. Lett. 17(4), 837–839 (2005).
[CrossRef]

2004 (2)

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

L. Domash, M. Wu, N. Nemchuk, and E. Ma, “Tunable and switchable Multiple-Cavity Thin Film Filters,” J. Lightwave Technol. 22(1), 126–135 (2004).
[CrossRef]

2001 (1)

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
[CrossRef]

1999 (1)

K. Kato, “Ultrawide-band/high-frequency photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1265–1281 (1999).
[CrossRef]

1998 (1)

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

1997 (2)

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, “A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 9(10), 1388–1390 (1997).
[CrossRef]

1995 (1)

M. S. Ünlü and S. Strite, “Resonant cavity enhanced photonic devices,” Appl. Phys. (Berl.) 78, 607–639 (1995).
[CrossRef]

1994 (1)

B. Pezeshki, F. F. Tong, J. A. Kash, and D. W. Kisker, “Vertical cavity devices as wavelength selective waveguides,” J. Lightwave Technol. 12(10), 1791–1801 (1994).
[CrossRef]

1993 (1)

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, and R. M. Potemski, “Tapered Fabry-Pérot waveguide optical demultiplexer,” IEEE Photon. Technol. Lett. 5(9), 1082–1085 (1993).
[CrossRef]

Adesida, I.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
[CrossRef]

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, “A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 9(10), 1388–1390 (1997).
[CrossRef]

Agashe, S. S.

K. T. Shiu, S. S. Agashe, and S. R. Forrest, “An InP-based monolithically integrated reconfigurable optical add-drop multiplexer,” IEEE Photon. Technol. Lett. 19(19), 1445–1447 (2007).
[CrossRef]

Baehr-Jones, T.

Baets, R.

Baker,

E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
[CrossRef]

Beling, A.

Benyattou, T.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Blondeau, R.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Cai, S.

Campbell, J. C.

Caneau, C.

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, “A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 9(10), 1388–1390 (1997).
[CrossRef]

Chan, E.

Christiaens, I.

Cueva, G.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
[CrossRef]

Cui, H.

Dalton, A.

Davies, L.

Demeester, P.

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

Dhanavantri, C.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Domash, L.

Driessen, A.

E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
[CrossRef]

Duan, X.

Dumka, D. C.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
[CrossRef]

Fay, P.

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, “A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 9(10), 1388–1390 (1997).
[CrossRef]

Forrest, S. R.

K. T. Shiu, S. S. Agashe, and S. R. Forrest, “An InP-based monolithically integrated reconfigurable optical add-drop multiplexer,” IEEE Photon. Technol. Lett. 19(19), 1445–1447 (2007).
[CrossRef]

Frankena, H. J.

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

Gabriel Sengo, N.

E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
[CrossRef]

Geuzebroek, D. H.

E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
[CrossRef]

Groen, F. H.

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

Guangxi Wang, P.

Guillot, G.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Halbritter, H.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Hane, K.

Hochberg, M.

Hoke, W. E.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
[CrossRef]

Huang, H.

Huang, Y.

Jang, J. H.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
[CrossRef]

Kanamori, Y.

Kash, J. A.

B. Pezeshki, F. F. Tong, J. A. Kash, and D. W. Kisker, “Vertical cavity devices as wavelength selective waveguides,” J. Lightwave Technol. 12(10), 1791–1801 (1994).
[CrossRef]

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, and R. M. Potemski, “Tapered Fabry-Pérot waveguide optical demultiplexer,” IEEE Photon. Technol. Lett. 5(9), 1082–1085 (1993).
[CrossRef]

Kato, K.

K. Kato, “Ultrawide-band/high-frequency photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1265–1281 (1999).
[CrossRef]

Kelderman, H.

E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
[CrossRef]

Kisker, D. W.

B. Pezeshki, F. F. Tong, J. A. Kash, and D. W. Kisker, “Vertical cavity devices as wavelength selective waveguides,” J. Lightwave Technol. 12(10), 1791–1801 (1994).
[CrossRef]

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, and R. M. Potemski, “Tapered Fabry-Pérot waveguide optical demultiplexer,” IEEE Photon. Technol. Lett. 5(9), 1082–1085 (1993).
[CrossRef]

Klein, E. J.

E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
[CrossRef]

Kokubun, Y.

Kotlyar, M. V.

M. V. Kotlyar, L. O’Faolain, A. B. Krysa, and T. F. Krauss, “Electrically tunable multiquantum-well InGaAsP-InGaAsP microphotonic filter,” IEEE Photon. Technol. Lett. 17(4), 837–839 (2005).
[CrossRef]

Krauss, T. F.

M. V. Kotlyar, L. O’Faolain, A. B. Krysa, and T. F. Krauss, “Electrically tunable multiquantum-well InGaAsP-InGaAsP microphotonic filter,” IEEE Photon. Technol. Lett. 17(4), 837–839 (2005).
[CrossRef]

Krug, W.

Krysa, A. B.

M. V. Kotlyar, L. O’Faolain, A. B. Krysa, and T. F. Krauss, “Electrically tunable multiquantum-well InGaAsP-InGaAsP microphotonic filter,” IEEE Photon. Technol. Lett. 17(4), 837–839 (2005).
[CrossRef]

Leclercq, J. L.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Ledantec, R.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Lemonias, P. J.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
[CrossRef]

Li, Y.

Li, Z.

Lv, J.

J. Lv, H. Huang, X. Ren, A. Miao, Y. Li, H. Song, Q. Wang, Y. Huang, and S. Cai, “Monolithically integrated long-wavelength tunable photodetector,” J. Lightwave Technol. 26(3), 338–342 (2008).
[CrossRef]

H. Huang, X. Ren, J. Lv, Q. Wang, H. Song, S. Cai, Y. Huang, and B. Qu, “Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector,” J. Appl. Phys. 104(11), 113114 (2008).
[CrossRef]

Ma, E.

Magno, F.

Meissner, P.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Mesel, K. D.

Metaal, E. G.

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

Miao, A.

Nemchuk, N.

O’Faolain, L.

M. V. Kotlyar, L. O’Faolain, A. B. Krysa, and T. F. Krauss, “Electrically tunable multiquantum-well InGaAsP-InGaAsP microphotonic filter,” IEEE Photon. Technol. Lett. 17(4), 837–839 (2005).
[CrossRef]

Oei, Y. S.

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

Pan, H.

Passaro, V.

Pezeshki, B.

B. Pezeshki, F. F. Tong, J. A. Kash, and D. W. Kisker, “Vertical cavity devices as wavelength selective waveguides,” J. Lightwave Technol. 12(10), 1791–1801 (1994).
[CrossRef]

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, and R. M. Potemski, “Tapered Fabry-Pérot waveguide optical demultiplexer,” IEEE Photon. Technol. Lett. 5(9), 1082–1085 (1993).
[CrossRef]

Potemski, R. M.

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, and R. M. Potemski, “Tapered Fabry-Pérot waveguide optical demultiplexer,” IEEE Photon. Technol. Lett. 5(9), 1082–1085 (1993).
[CrossRef]

Qu, B.

H. Huang, X. Ren, J. Lv, Q. Wang, H. Song, S. Cai, Y. Huang, and B. Qu, “Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector,” J. Appl. Phys. 104(11), 113114 (2008).
[CrossRef]

Ren, X.

Riemenschneider, F.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Roelkens, G.

Rondi, D.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Sagnes, I.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Scherer,

Seassal, C.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Seo, J. W.

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, “A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 9(10), 1388–1390 (1997).
[CrossRef]

Shang, Y.

Shiu, K. T.

K. T. Shiu, S. S. Agashe, and S. R. Forrest, “An InP-based monolithically integrated reconfigurable optical add-drop multiplexer,” IEEE Photon. Technol. Lett. 19(19), 1445–1447 (2007).
[CrossRef]

Singh, B. R.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Smit, M. K.

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

Song, H.

J. Lv, H. Huang, X. Ren, A. Miao, Y. Li, H. Song, Q. Wang, Y. Huang, and S. Cai, “Monolithically integrated long-wavelength tunable photodetector,” J. Lightwave Technol. 26(3), 338–342 (2008).
[CrossRef]

H. Huang, X. Ren, J. Lv, Q. Wang, H. Song, S. Cai, Y. Huang, and B. Qu, “Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector,” J. Appl. Phys. 104(11), 113114 (2008).
[CrossRef]

Spisser, A.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Strassner, M.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Strite, S.

M. S. Ünlü and S. Strite, “Resonant cavity enhanced photonic devices,” Appl. Phys. (Berl.) 78, 607–639 (1995).
[CrossRef]

Sullivan,

Syguda, S.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Takahashi, K.

Takayesu, J.

Tarraf, A.

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

Thourhout, D. V.

Tong, F. F.

B. Pezeshki, F. F. Tong, J. A. Kash, and D. W. Kisker, “Vertical cavity devices as wavelength selective waveguides,” J. Lightwave Technol. 12(10), 1791–1801 (1994).
[CrossRef]

Tong, F. K.

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, and R. M. Potemski, “Tapered Fabry-Pérot waveguide optical demultiplexer,” IEEE Photon. Technol. Lett. 5(9), 1082–1085 (1993).
[CrossRef]

Tsarev, A.

Uitterdijk, T.

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

Ünlü, M. S.

M. S. Ünlü and S. Strite, “Resonant cavity enhanced photonic devices,” Appl. Phys. (Berl.) 78, 607–639 (1995).
[CrossRef]

Viktorovitch, P.

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

Vreeburg, C. G. M.

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

Wang, Q.

Wang, W.

Wang, X.

Wohlmuth, W. A.

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, “A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 9(10), 1388–1390 (1997).
[CrossRef]

Wu, M.

Ye, X.

Yi Liao, J.

Appl. Opt. (1)

Appl. Phys. (Berl.) (1)

M. S. Ünlü and S. Strite, “Resonant cavity enhanced photonic devices,” Appl. Phys. (Berl.) 78, 607–639 (1995).
[CrossRef]

Electron. Lett. (1)

H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, and P. Meissner, “Tunable and wavelength selective pin photodiode,” Electron. Lett. 40(6), 388–390 (2004).
[CrossRef]

IEEE Photon. Technol. Lett. (8)

A. Spisser, R. Ledantec, C. Seassal, J. L. Leclercq, T. Benyattou, D. Rondi, R. Blondeau, G. Guillot, and P. Viktorovitch, “Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications,” IEEE Photon. Technol. Lett. 10(9), 1259–1261 (1998).
[CrossRef]

M. V. Kotlyar, L. O’Faolain, A. B. Krysa, and T. F. Krauss, “Electrically tunable multiquantum-well InGaAsP-InGaAsP microphotonic filter,” IEEE Photon. Technol. Lett. 17(4), 837–839 (2005).
[CrossRef]

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, and I. Adesida, “A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector,” IEEE Photon. Technol. Lett. 9(10), 1388–1390 (1997).
[CrossRef]

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, “Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates,” IEEE Photon. Technol. Lett. 13(2), 151–153 (2001).
[CrossRef]

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, and R. M. Potemski, “Tapered Fabry-Pérot waveguide optical demultiplexer,” IEEE Photon. Technol. Lett. 5(9), 1082–1085 (1993).
[CrossRef]

E. J. Klein, D. H. Geuzebroek, H. Kelderman, N. Gabriel Sengo, Baker, and A. Driessen, “Reconfigurable optical add-drop multiplexer using microring resonators,” IEEE Photon. Technol. Lett. 17(11), 2358–2360 (2005).
[CrossRef]

K. T. Shiu, S. S. Agashe, and S. R. Forrest, “An InP-based monolithically integrated reconfigurable optical add-drop multiplexer,” IEEE Photon. Technol. Lett. 19(19), 1445–1447 (2007).
[CrossRef]

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, and H. J. Frankena, “First InP-based reconfigurable integrated add-drop multiplexer,” IEEE Photon. Technol. Lett. 9(2), 188–190 (1997).
[CrossRef]

IEEE Trans. Microw. Theory Tech. (1)

K. Kato, “Ultrawide-band/high-frequency photodetectors,” IEEE Trans. Microw. Theory Tech. 47(7), 1265–1281 (1999).
[CrossRef]

J. Appl. Phys. (1)

H. Huang, X. Ren, J. Lv, Q. Wang, H. Song, S. Cai, Y. Huang, and B. Qu, “Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector,” J. Appl. Phys. 104(11), 113114 (2008).
[CrossRef]

J. Lightwave Technol. (7)

Opt. Express (3)

Other (4)

A. Wakatsuki, T. Furuta, Y. Muramoto, and T. Ishibashi, “High-Speed Photodiode and Optical Receiver Technologies,” in Optical Fiber Communication Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper OMK1, http://www.opticsinfobase.org/abstract.cfm?URI=OFC-2009-OMK1 .

J. Kim, S. Kanakaraju, W. B. Johnson, and C. H. Lee, “Uni-Traveling Carrier Phototransistor,” in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper CMQQ1, http://www.opticsinfobase.org/abstract.cfm?URI=CLEO-2009-CMQQ1 .

T. Chu, H. Yamada, A. Gomyo, A. Ushida, S. Ishida, and Y. Arakawa, “Integrated Reconfigurable Optical Add-Drop Multiplexer (R-OADM) based on Silicon Nano-Photonic Waveguides,” in Proceedings of the 3rd IEEE International Conference on Group IV Photonics, 261–263 (2006).

I. Kimukin, N. Biyikli, and E. Ozbay, “High-performance 1.55 micron resonant cavity enhanced photodetector,” in Optical Fiber Communications Conference, A. Sawchuk, ed., Vol. 70 of OSA Trends in Optics and Photonics (Optical Society of America, 2002), paper TuW6, http://www.opticsinfobase.org/abstract.cfm?URI=OFC-2002-TuW6 .

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Figures (12)

Fig. 1
Fig. 1

(a) Schematic diagram of the integrated reconfigurable four-channel WDM drop module using a tunable WSPD array with a multistep cavity. (b) Structure of the tunable and wavelength selective PIN photodetector.

Fig. 2
Fig. 2

Theoretical spectral response characteristics for a GaAs/AlGaAs quarter-wavelength stacks mirror for 5, 10and 20 pairs.

Fig. 3
Fig. 3

Theoretical spectral response characteristic at the drop port of the integrated reconfigurable four-channel WDM drop module. The dropped central wavelengths are 1540, 1550, 1560, and 1570nm.

Fig. 4
Fig. 4

The growth process of the tunable WSPD array and the fabrication process of the four-step cavity.

Fig. 5
Fig. 5

Cross sectional SEM view of the device epitaxial structure.

Fig. 6
Fig. 6

Double crystal X-ray diffraction ω-2θ scans. The point A shows the influence of the p-type or n-type doping. The right two peaks C and D correspond to the GaAs-based FPC, The satellite peaks S are contributed to the GaAs/AlGaAs DBRs.

Fig. 7
Fig. 7

Optical micrograph of the WSPD array.

Fig. 8
Fig. 8

(a) Spectral response at the drop port of the integrated reconfigurable four-channel WDM drop module. The dropped central wavelengths are 1538, 1550, 1559, and 1570nm. (b) Spectral response on a log scale at the drop port of the integrated reconfigurable four-channel WDM drop module, the extinction ratio is 50dB.

Fig. 9
Fig. 9

Measured spectral responses of one photodetector in the WSPD array. The applied tuning powers are 0W, 0.2W, 0.4W, 0.5W, 0.65W and 0.7W.

Fig. 10
Fig. 10

Peak response wavelength against applied tuning power.

Fig. 11
Fig. 11

Measured dark current against reverse bias of one photodetector in the WSPD array. The dark current is 10nA at a reverse bias of 3V.

Fig. 12
Fig. 12

Relative frequency response of one photodetector in the WSPD array. The 3dB bandwidth of the device is 9.2GHz with a reverse bias of 3.0V and an optical input power of 1μW at 1550nm wavelength.

Tables (1)

Tables Icon

Table 1 Layer structure of the device

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

η = ( 1 R ) e α d p ( 1 e α L )
( E i n + E i n ) = S B o t t o m D B R U C a v i t y S T o p D B R S P I N ( E o u t + E o u t ) = S ( E o u t + E o u t ) = ( S 11 S 12 S 21 S 22 ) ( E o u t + E o u t )
R = | S 21 / S 11 | 2

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