Abstract

We propose, fabricate and characterize the freestanding GaN nanocolumn membrane with bottom subwavelength nanostructures. The GaN nanocolumns are epitaxially grown on freestanding nanostructured silicon substrate that is achieved by a combination of self-assemble technique and silicon-on-insulator (SOI) technology. Optical reflection is greatly suppressed in the visible range due to the graded refractive index effect of subwavelength nanostructures. The freestanding GaN nanocolumn membrane is realized by removing silicon substrate from the backside, eliminating the silicon absorption of the emitted light and leading to a strong blue emission from the bottom side. The obtained structures also demonstrate the potential application for anti-reflective (AR) coating and GaN-Si hybrid microelectromechanical system (MEMS).

© 2010 OSA

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    [CrossRef]
  3. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
    [CrossRef]
  4. H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
    [CrossRef]
  5. J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
    [CrossRef]
  6. H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
    [CrossRef]
  7. Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  27. H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]
  32. H. Y. Chen, H. W. Lin, C. Y. Wu, W. C. Chen, J. S. Chen, and S. Gwo, “Gallium nitride nanorod arrays as low-refractive-index transparent media in the entire visible spectral region,” Opt. Express 16(11), 8106–8116 (2008).
    [CrossRef] [PubMed]
  33. K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 3A), L192–L194 (2001).
    [CrossRef]
  34. C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
    [CrossRef]

2009 (8)

S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
[CrossRef]

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

H. Sameshima, M. Wakui, F. R. Hu, and K. Hane, “A freestanding GaN/HfO2 membrane grown by molecular beam epitaxy for GaN-Si hybrid MEMS,” IEEE J. Sel. Top. Quantum Electron. 15(5), 1332–1337 (2009).
[CrossRef]

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

C. H. Chang, Yu. Peichen, and C. S. Yang, “Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen,” Appl. Phys. Lett. 94(5), 051114 (2009).
[CrossRef]

S. M. Kim, T. Y. Park, S. J. Park, S. J. Lee, J. H. Baek, Y. C. Park, and G. Y. Jung, “Nanopatterned aluminum nitride template for high efficiency light-emitting diodes,” Opt. Express 17(17), 14791–14799 (2009).
[CrossRef] [PubMed]

2008 (11)

H. Y. Chen, H. W. Lin, C. Y. Wu, W. C. Chen, J. S. Chen, and S. Gwo, “Gallium nitride nanorod arrays as low-refractive-index transparent media in the entire visible spectral region,” Opt. Express 16(11), 8106–8116 (2008).
[CrossRef] [PubMed]

C. H. Chiu, P. C. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

H. Sekiguchi, K. Kishino, and A. Kikuchi, “GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy,” Electron. Lett. 44(2), 151–152 (2008).
[CrossRef]

C. M. Hsu, S. T. Connor, M. X. Tang, and Y. Cui, “Wafer-scale silicon nanopillars and nanocones by Langmuir–Blodgett assembly and etching,” Appl. Phys. Lett. 93(13), 133109 (2008).
[CrossRef]

S. Chhajed, M. F. Schubert, J. K. Kim, and E. F. Schubert, “Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics,” Appl. Phys. Lett. 93(25), 251108 (2008).
[CrossRef]

W. L. Min, B. Jiang, and P. Jiang, “Bioinspired self-cleaning antireflection coatings,” Adv. Mater. 20(20), 3914–3918 (2008).
[CrossRef]

H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
[CrossRef] [PubMed]

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

2007 (4)

R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, “Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy,” Nano Lett. 7(8), 2248–2251 (2007).
[CrossRef] [PubMed]

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007).
[CrossRef]

2006 (5)

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[CrossRef] [PubMed]

2004 (2)

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[CrossRef]

H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[CrossRef]

2001 (1)

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 3A), L192–L194 (2001).
[CrossRef]

2000 (1)

T. Ono, N. Orimoto, S. S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

1997 (1)

F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature 386(6623), 351–359 (1997).
[CrossRef]

Algra, R. E.

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Baek, J. H.

Bakkers, E. P. A. M.

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Bello, I.

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

Benkart, P.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Bläsing, J.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Bour, D. P.

F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature 386(6623), 351–359 (1997).
[CrossRef]

Burkhard, G. F.

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Calarco, R.

R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, “Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy,” Nano Lett. 7(8), 2248–2251 (2007).
[CrossRef] [PubMed]

Chang, C. H.

C. H. Chang, Yu. Peichen, and C. S. Yang, “Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen,” Appl. Phys. Lett. 94(5), 051114 (2009).
[CrossRef]

Chang, Y. C.

Chao, C. L.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Chen, C. C.

Chen, H. Y.

Chen, J. S.

Chen, K. J.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Chen, P.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Chen, W. C.

Chen, Z. H.

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

Cheng, H. M.

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

Cheng, S. J.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Cheng, Y. J.

Chhajed, S.

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

S. Chhajed, M. F. Schubert, J. K. Kim, and E. F. Schubert, “Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics,” Appl. Phys. Lett. 93(25), 251108 (2008).
[CrossRef]

Chi, L. F.

H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
[CrossRef] [PubMed]

Chiu, C. H.

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

C. H. Chiu, P. C. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

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H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[CrossRef]

Choi, H. W.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Chua, S. J.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

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H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[CrossRef]

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Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

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J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

C. M. Hsu, S. T. Connor, M. X. Tang, and Y. Cui, “Wafer-scale silicon nanopillars and nanocones by Langmuir–Blodgett assembly and etching,” Appl. Phys. Lett. 93(13), 133109 (2008).
[CrossRef]

Craford, M. G.

Cui, Y.

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

C. M. Hsu, S. T. Connor, M. X. Tang, and Y. Cui, “Wafer-scale silicon nanopillars and nanocones by Langmuir–Blodgett assembly and etching,” Appl. Phys. Lett. 93(13), 133109 (2008).
[CrossRef]

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S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

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T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
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J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
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R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, “Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy,” Nano Lett. 7(8), 2248–2251 (2007).
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S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Diez, A.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Esashi, M.

T. Ono, N. Orimoto, S. S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Fan, S. H.

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
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H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
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A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

Hane, K.

H. Sameshima, M. Wakui, F. R. Hu, and K. Hane, “A freestanding GaN/HfO2 membrane grown by molecular beam epitaxy for GaN-Si hybrid MEMS,” IEEE J. Sel. Top. Quantum Electron. 15(5), 1332–1337 (2009).
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F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Hao, J. Y.

H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
[CrossRef] [PubMed]

Harbers, G.

Hartsuiker, A.

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Hernández-Guillén, F. J.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

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S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[CrossRef] [PubMed]

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J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

C. M. Hsu, S. T. Connor, M. X. Tang, and Y. Cui, “Wafer-scale silicon nanopillars and nanocones by Langmuir–Blodgett assembly and etching,” Appl. Phys. Lett. 93(13), 133109 (2008).
[CrossRef]

Hsu, S. H.

Hu, E. L.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

Hu, F. R.

H. Sameshima, M. Wakui, F. R. Hu, and K. Hane, “A freestanding GaN/HfO2 membrane grown by molecular beam epitaxy for GaN-Si hybrid MEMS,” IEEE J. Sel. Top. Quantum Electron. 15(5), 1332–1337 (2009).
[CrossRef]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Hui, K. N.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Immink, G.

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Jia, S.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Jiang, B.

W. L. Min, B. Jiang, and P. Jiang, “Bioinspired self-cleaning antireflection coatings,” Adv. Mater. 20(20), 3914–3918 (2008).
[CrossRef]

Jiang, P.

W. L. Min, B. Jiang, and P. Jiang, “Bioinspired self-cleaning antireflection coatings,” Adv. Mater. 20(20), 3914–3918 (2008).
[CrossRef]

Jung, G. Y.

Kan, H.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Kanamori, Y.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Kang, T. W.

H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[CrossRef]

Kawai, M.

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[CrossRef]

Kikuchi, A.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy,” Electron. Lett. 44(2), 151–152 (2008).
[CrossRef]

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[CrossRef]

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 3A), L192–L194 (2001).
[CrossRef]

Kim, D. Y.

H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[CrossRef]

Kim, H. M.

H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[CrossRef]

Kim, J. H.

S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
[CrossRef]

Kim, J. K.

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

S. Chhajed, M. F. Schubert, J. K. Kim, and E. F. Schubert, “Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics,” Appl. Phys. Lett. 93(25), 251108 (2008).
[CrossRef]

Kim, S. I.

H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[CrossRef]

Kim, S. M.

Kim, Y. H.

S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
[CrossRef]

Kishino, K.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy,” Electron. Lett. 44(2), 151–152 (2008).
[CrossRef]

A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
[CrossRef]

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 3A), L192–L194 (2001).
[CrossRef]

Kohn, E.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Krames, M. R.

Krost, A.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Kunze, M.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Kuo, H. C.

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

C. H. Chiu, P. C. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Kusakabe, K.

K. Kusakabe, A. Kikuchi, and K. Kishino, “Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 3A), L192–L194 (2001).
[CrossRef]

Kuwabara, M.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Kwon, K. W.

S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
[CrossRef]

Lai, P. T.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Lau, K. M.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Lee, C. S.

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

Lee, H.

H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
[CrossRef]

Lee, J. K.

S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
[CrossRef]

Lee, K. H.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

Lee, S. J.

Lee, S. S.

T. Ono, N. Orimoto, S. S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Lee, S. T.

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

Lee, Y. J.

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

Li, Z. Y.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Lin, H. W.

Lin, S. Y.

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

Lin, V. K. X.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

Long, D. H.

S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
[CrossRef]

Lu, N.

H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
[CrossRef] [PubMed]

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Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

C. H. Chiu, P. C. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Lüth, H.

R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, “Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy,” Nano Lett. 7(8), 2248–2251 (2007).
[CrossRef] [PubMed]

McGehee, M.

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Megens, M. M.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Meijers, R. J.

R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, “Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy,” Nano Lett. 7(8), 2248–2251 (2007).
[CrossRef] [PubMed]

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W. L. Min, B. Jiang, and P. Jiang, “Bioinspired self-cleaning antireflection coatings,” Adv. Mater. 20(20), 3914–3918 (2008).
[CrossRef]

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Mueller-Mach, R.

Muskens, O. L.

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Nakamura, S.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
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T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
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F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Oh, J. K.

S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
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T. Ono, N. Orimoto, S. S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
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T. Ono, N. Orimoto, S. S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
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S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
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Park, S. J.

Park, T. Y.

Park, Y. C.

Peichen, Y.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Peichen, Yu.

C. H. Chang, Yu. Peichen, and C. S. Yang, “Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen,” Appl. Phys. Lett. 94(5), 051114 (2009).
[CrossRef]

Pietzka, C.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
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F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices,” Nature 386(6623), 351–359 (1997).
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Qi, D. P.

H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
[CrossRef] [PubMed]

Rivas, J. G.

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
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H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-Brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004).
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S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
[CrossRef]

Sameshima, H.

H. Sameshima, M. Wakui, F. R. Hu, and K. Hane, “A freestanding GaN/HfO2 membrane grown by molecular beam epitaxy for GaN-Si hybrid MEMS,” IEEE J. Sel. Top. Quantum Electron. 15(5), 1332–1337 (2009).
[CrossRef]

Schubert, E. F.

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

S. Chhajed, M. F. Schubert, J. K. Kim, and E. F. Schubert, “Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics,” Appl. Phys. Lett. 93(25), 251108 (2008).
[CrossRef]

Schubert, M. F.

S. Chhajed, M. F. Schubert, J. K. Kim, and E. F. Schubert, “Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics,” Appl. Phys. Lett. 93(25), 251108 (2008).
[CrossRef]

Schulze, F.

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

Sekiguchi, H.

H. Sekiguchi, K. Kishino, and A. Kikuchi, “GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy,” Electron. Lett. 44(2), 151–152 (2008).
[CrossRef]

Sharma, R.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

Shchekin, O. B.

Simizu, T.

T. Ono, N. Orimoto, S. S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000).
[CrossRef]

Song, H. S.

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

Stoica, T.

R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, “Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy,” Nano Lett. 7(8), 2248–2251 (2007).
[CrossRef] [PubMed]

Sun, X. Y.

S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[CrossRef] [PubMed]

Sutter, E.

R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, “Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy,” Nano Lett. 7(8), 2248–2251 (2007).
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A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys. 43(No. 12A), L1524–L1526 (2004).
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A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[CrossRef]

Tang, M. X.

C. M. Hsu, S. T. Connor, M. X. Tang, and Y. Cui, “Wafer-scale silicon nanopillars and nanocones by Langmuir–Blodgett assembly and etching,” Appl. Phys. Lett. 93(13), 133109 (2008).
[CrossRef]

Tang, Y. B.

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

Teng, J. H.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Teo, S. L.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

Tripathy, S.

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Vecchi, G.

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Vos, W. L.

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Wakui, M.

H. Sameshima, M. Wakui, F. R. Hu, and K. Hane, “A freestanding GaN/HfO2 membrane grown by molecular beam epitaxy for GaN-Si hybrid MEMS,” IEEE J. Sel. Top. Quantum Electron. 15(5), 1332–1337 (2009).
[CrossRef]

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Wang, D.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Wang, Q.

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Wang, R. N.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Wang, S. C.

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

C. H. Chiu, P. C. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008).
[CrossRef] [PubMed]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Wang, X.

S. D. Hersee, X. Y. Sun, and X. Wang, “The controlled growth of GaN nanowires,” Nano Lett. 6(8), 1808–1811 (2006).
[CrossRef] [PubMed]

Wierer, J. J.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Wu, C. Y.

Xu, H. B.

H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
[CrossRef] [PubMed]

Xu, Y. Q.

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

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H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
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C. H. Chang, Yu. Peichen, and C. S. Yang, “Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen,” Appl. Phys. Lett. 94(5), 051114 (2009).
[CrossRef]

Yang, Z.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Yen, H. H.

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

Yoshida, H.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Yu, P. C.

Yu, Z. F.

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Zhang, B.

H. B. Xu, N. Lu, D. P. Qi, J. Y. Hao, L. G. Gao, B. Zhang, and L. F. Chi, “Biomimetic antireflective Si nanopillar arrays,” Small 4(11), 1972–1975 (2008).
[CrossRef] [PubMed]

Zhang, B. S.

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Zhang, W. J.

Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, “Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells,” Nano Lett. 8(12), 4191–4195 (2008).
[CrossRef]

Zhang, X. H.

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

Zhao, Y.

F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008).
[CrossRef] [PubMed]

Zhou, L.

Zhu, J.

J. Zhu, Z. F. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Q. Xu, Q. Wang, M. McGehee, S. H. Fan, and Y. Cui, “Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays,” Nano Lett. 9(1), 279–282 (2009).
[CrossRef]

Zimmermann, T.

T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006).
[CrossRef]

Adv. Funct. Mater. (1)

S. W. Ryu, J. Park, J. K. Oh, D. H. Long, K. W. Kwon, Y. H. Kim, J. K. Lee, and J. H. Kim, “Analysis of improved efficiency of InGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide,” Adv. Funct. Mater. 19(10), 1650–1655 (2009).
[CrossRef]

Adv. Mater. (2)

W. L. Min, B. Jiang, and P. Jiang, “Bioinspired self-cleaning antireflection coatings,” Adv. Mater. 20(20), 3914–3918 (2008).
[CrossRef]

S. L. Diedenhofen, G. Vecchi, R. E. Algra, A. Hartsuiker, O. L. Muskens, G. Immink, E. P. A. M. Bakkers, W. L. Vos, and J. G. Rivas, “Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods,” Adv. Mater. 21(9), 973–978 (2009).
[CrossRef]

Appl. Phys. Lett. (9)

C. H. Chang, Yu. Peichen, and C. S. Yang, “Broadband and omnidirectional antireflection from conductive indium-tin-oxide nanocolumns prepared by glancing-angle deposition with nitrogen,” Appl. Phys. Lett. 94(5), 051114 (2009).
[CrossRef]

C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, Y. Peichen, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, “Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template,” Appl. Phys. Lett. 93(8), 081108 (2008).
[CrossRef]

C. M. Hsu, S. T. Connor, M. X. Tang, and Y. Cui, “Wafer-scale silicon nanopillars and nanocones by Langmuir–Blodgett assembly and etching,” Appl. Phys. Lett. 93(13), 133109 (2008).
[CrossRef]

S. Chhajed, M. F. Schubert, J. K. Kim, and E. F. Schubert, “Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics,” Appl. Phys. Lett. 93(25), 251108 (2008).
[CrossRef]

F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006).
[CrossRef]

H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006).
[CrossRef]

S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007).
[CrossRef]

Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006).
[CrossRef]

Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009).
[CrossRef]

Electron. Lett. (1)

H. Sekiguchi, K. Kishino, and A. Kikuchi, “GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy,” Electron. Lett. 44(2), 151–152 (2008).
[CrossRef]

IEEE Electron Device Lett. (1)

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Figures (6)

Fig. 1
Fig. 1

Schematic fabrication process of the freestanding GaN nanocolumn membrane with bottom subwavelength nanostructures.

Fig. 2
Fig. 2

(a) and (b) the 30°tilt-view SEM images of the close-packed monolayer of silica nanospheres; (c) and (d) the tilt-view SEM images of fabricated subwavelength silicon nanostructure; (e) three-dimensional surface profile of freestanding silicon slab; (f) photograph of silicon substrate and the freestanding GaN nanocolumn membrane.

Fig. 3
Fig. 3

(a) Measured reflectivity of subwavelength silicon nanostructures on silicon substrate; (b) measured reflectivity of subwavelength silicon nanostructures on SOI substrate.

Fig. 4
Fig. 4

(a) Sample of the freestanding GaN nanocolumn membrane obtained from silicon substrate side; (b) and (c) the 30°tilt-view SEM images of the freestanding GaN nanocolumns obtained from the top side; (d) and (e) the tilt-view SEM images of the bottom surface of the subwavelength GaN nanostructures; (f) the bottom surface of the GaN nanocolumns grown on the flat silicon substrate.

Fig. 5
Fig. 5

(a) Measured reflectivity of the GaN nanocolumn slab grown on the flat silicon substrate; (b) measured reflectivity of the GaN nanocolumn slab grown on nanostructured silicon substrate.

Fig. 6
Fig. 6

(a) The PL spectra of the GaN nanocolumn slab grown on the flat silicon substrate; (b) the PL spectra of the GaN nanocolumn slab grown on nanostructured silicon substrate.

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