Abstract

A high performance monolithically integrated WDM receiver is fabricated on the SOI platform, with key components comprising a 1 x 32 Si-based AWG and an array of high speed waveguided Ge-on-Si photodetectors. The optical channel spacing is 200 GHz. This configuration was used to demonstrate 32-channel operation in the L-band, where it is particularly challenging for silicon photonics due to the low absorption coefficient of Ge at L-band wavelengths. Each channel is capable of operating at a data rate of at least 10 Gbps, resulting in an aggregate data rate of 320 Gbps. At a BER of 1 × 10−11, the WDM receiver showed an optical input sensitivity between −16 dBm and −19 dBm.

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2009 (3)

2008 (1)

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

2007 (3)

2006 (3)

Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “Cascaded silicon micro-ring modulators for WDM optical interconnection,” Opt. Express 14(20), 9431–9435 (2006).
[CrossRef] [PubMed]

S. J. Koester, “J. D, Schaub, G. Dehlinger and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic application,” IEEE J. Sel. Top. Quantum Electron. 12, 1489–1502 (2006).
[CrossRef]

Q. Fang, F. Li, and Y. L. Liu, “Compact SOI arrayed waveguide garting demultiplexer with broad spectral response,” Opt. Commun. 258(2), 155–158 (2006).
[CrossRef]

2005 (1)

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

2004 (1)

W. Tong, V. M. Menon, F. Xia, and S. R. Forrest, “An asymmetric twin waveguide eight-channel polarization-independent arrayed waveguide grating with an integrated photodiode array,” IEEE Photon. Technol. Lett. 16(4), 1170–1172 (2004).
[CrossRef]

2002 (1)

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

2001 (2)

G. Jacobsen and P. Wildhagen, “A general and rigorous WDM receiver model targeting 10-40-Gb/s channel bit rates,” J. Lightwave Technol. 19(7), 966–976 (2001).
[CrossRef]

G. Masini, L. Calace, G. Assanto, H. C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001).
[CrossRef]

1999 (1)

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

1998 (1)

M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, and Y. Yoshikuni, “Packaged polarization-insensitive WDM monitor with low loss (7.3 dB) and wide tuning range (4.5nm),” IEEE Photon. Technol. Lett. 10(11), 1614–1616 (1998).
[CrossRef]

1995 (1)

M. Zirngibl, C. H. Joyner, and L. W. Stulz, “WDM receiver by monolithic integration of an optical preamplifier, waveguide grating router and photodiode array,” Electron. Lett. 31(7), 581–582 (1995).
[CrossRef]

Ahn, D.

Akahori, Y.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Assanto, G.

G. Masini, L. Calace, G. Assanto, H. C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001).
[CrossRef]

Beals, M.

Bergman, K.

B. G. Lee, B. A. Small, Q. Xu, M. Lipson, and K. Bergman, “Characterization of a 4 × 4 Gb/s parallel electronic bus to WDM optical link silicon photonic translator,” IEEE Photon. Technol. Lett. 19(7), 456–458 (2007).
[CrossRef]

Calace, L.

G. Masini, L. Calace, G. Assanto, H. C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001).
[CrossRef]

Cassan, E.

Chen, J.

Chen, L.

Chetrit, Y.

Chua, K. T.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Cohen, R.

Crozat, P.

Daleiden, J.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Damlencourt, J.-F.

Fang, Q.

Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009).
[CrossRef]

Q. Fang, F. Li, and Y. L. Liu, “Compact SOI arrayed waveguide garting demultiplexer with broad spectral response,” Opt. Commun. 258(2), 155–158 (2006).
[CrossRef]

Fédéli, J.-M.

Forrest, S. R.

W. Tong, V. M. Menon, F. Xia, and S. R. Forrest, “An asymmetric twin waveguide eight-channel polarization-independent arrayed waveguide grating with an integrated photodiode array,” IEEE Photon. Technol. Lett. 16(4), 1170–1172 (2004).
[CrossRef]

Giziewicz, W.

Han, Y.-T.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Hartnagel, H. L.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Herbst, S.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Hong, C. Y.

Hwang, W.-Y.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Ishii, M.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Jacobsen, G.

Joyner, C. H.

M. Zirngibl, C. H. Joyner, and L. W. Stulz, “WDM receiver by monolithic integration of an optical preamplifier, waveguide grating router and photodiode array,” Electron. Lett. 31(7), 581–582 (1995).
[CrossRef]

Jung, K.-Y.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Kadota, Y.

M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, and Y. Yoshikuni, “Packaged polarization-insensitive WDM monitor with low loss (7.3 dB) and wide tuning range (4.5nm),” IEEE Photon. Technol. Lett. 10(11), 1614–1616 (1998).
[CrossRef]

Kamei, S.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Kärtner, F. X.

Kasahara, R.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Kim, D.-J.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Kimerling, L. C.

D. Ahn, C. Y. Hong, J. F. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[CrossRef] [PubMed]

G. Masini, L. Calace, G. Assanto, H. C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001).
[CrossRef]

Koester, S. J.

S. J. Koester, “J. D, Schaub, G. Dehlinger and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic application,” IEEE J. Sel. Top. Quantum Electron. 12, 1489–1502 (2006).
[CrossRef]

Kohtoku, M.

M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, and Y. Yoshikuni, “Packaged polarization-insensitive WDM monitor with low loss (7.3 dB) and wide tuning range (4.5nm),” IEEE Photon. Technol. Lett. 10(11), 1614–1616 (1998).
[CrossRef]

Kumar, V. N.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Kwong, D. L.

Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009).
[CrossRef]

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Laval, S.

Lecunff, Y.

Lee, B. G.

B. G. Lee, B. A. Small, Q. Xu, M. Lipson, and K. Bergman, “Characterization of a 4 × 4 Gb/s parallel electronic bus to WDM optical link silicon photonic translator,” IEEE Photon. Technol. Lett. 19(7), 456–458 (2007).
[CrossRef]

Lee, D.-J.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Lee, S. J.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Li, F.

Q. Fang, F. Li, and Y. L. Liu, “Compact SOI arrayed waveguide garting demultiplexer with broad spectral response,” Opt. Commun. 258(2), 155–158 (2006).
[CrossRef]

Lipson, M.

Liu, J. F.

Liu, Y. L.

Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009).
[CrossRef]

Q. Fang, F. Li, and Y. L. Liu, “Compact SOI arrayed waveguide garting demultiplexer with broad spectral response,” Opt. Commun. 258(2), 155–158 (2006).
[CrossRef]

Lo, G. Q.

Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009).
[CrossRef]

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Loh, T. H.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Loh, W. Y.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Luan, H. C.

G. Masini, L. Calace, G. Assanto, H. C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001).
[CrossRef]

Marris-Morini, D.

Masini, G.

G. Masini, L. Calace, G. Assanto, H. C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001).
[CrossRef]

Matsuura, N.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Meissner, P.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Menon, V. M.

W. Tong, V. M. Menon, F. Xia, and S. R. Forrest, “An asymmetric twin waveguide eight-channel polarization-independent arrayed waveguide grating with an integrated photodiode array,” IEEE Photon. Technol. Lett. 16(4), 1170–1172 (2004).
[CrossRef]

Michel, J.

Morse, M. M.

Mutamba, K.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Nakamura, M.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Ohyama, T.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Oku, S.

M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, and Y. Yoshikuni, “Packaged polarization-insensitive WDM monitor with low loss (7.3 dB) and wide tuning range (4.5nm),” IEEE Photon. Technol. Lett. 10(11), 1614–1616 (1998).
[CrossRef]

Oohashi, H.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Osmond, J.

Paniccia, M. J.

Park, S.-H.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Park, S.-W.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Park, Y.-J.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Peerlings, J.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Pfeiffer, J.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Riemenschneider, R.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Rubin, D.

Sanjoh, H.

M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, and Y. Yoshikuni, “Packaged polarization-insensitive WDM monitor with low loss (7.3 dB) and wide tuning range (4.5nm),” IEEE Photon. Technol. Lett. 10(11), 1614–1616 (1998).
[CrossRef]

Sarid, G.

Scheuer, V.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Schmidt, B.

Shakya, J.

Shin, J.-U.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Small, B. A.

B. G. Lee, B. A. Small, Q. Xu, M. Lipson, and K. Bergman, “Characterization of a 4 × 4 Gb/s parallel electronic bus to WDM optical link silicon photonic translator,” IEEE Photon. Technol. Lett. 19(7), 456–458 (2007).
[CrossRef]

Song, J. F.

Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009).
[CrossRef]

Song, S.-H.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Strassner, M.

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

Stulz, L. W.

M. Zirngibl, C. H. Joyner, and L. W. Stulz, “WDM receiver by monolithic integration of an optical preamplifier, waveguide grating router and photodiode array,” Electron. Lett. 31(7), 581–582 (1995).
[CrossRef]

Sung, H.-K.

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

Tong, W.

W. Tong, V. M. Menon, F. Xia, and S. R. Forrest, “An asymmetric twin waveguide eight-channel polarization-independent arrayed waveguide grating with an integrated photodiode array,” IEEE Photon. Technol. Lett. 16(4), 1170–1172 (2004).
[CrossRef]

Vivien, L.

Wang, J.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Wildhagen, P.

Xia, F.

W. Tong, V. M. Menon, F. Xia, and S. R. Forrest, “An asymmetric twin waveguide eight-channel polarization-independent arrayed waveguide grating with an integrated photodiode array,” IEEE Photon. Technol. Lett. 16(4), 1170–1172 (2004).
[CrossRef]

Xiong, Y. Z.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Xu, Q.

B. G. Lee, B. A. Small, Q. Xu, M. Lipson, and K. Bergman, “Characterization of a 4 × 4 Gb/s parallel electronic bus to WDM optical link silicon photonic translator,” IEEE Photon. Technol. Lett. 19(7), 456–458 (2007).
[CrossRef]

Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “Cascaded silicon micro-ring modulators for WDM optical interconnection,” Opt. Express 14(20), 9431–9435 (2006).
[CrossRef] [PubMed]

Yamada, T.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Yamakoshi, K.

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

Yin, T.

Yoshikuni, Y.

M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, and Y. Yoshikuni, “Packaged polarization-insensitive WDM monitor with low loss (7.3 dB) and wide tuning range (4.5nm),” IEEE Photon. Technol. Lett. 10(11), 1614–1616 (1998).
[CrossRef]

Yu, M. B.

Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009).
[CrossRef]

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Zang, H.

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

Zhang, G.

Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009).
[CrossRef]

Zirngibl, M.

M. Zirngibl, C. H. Joyner, and L. W. Stulz, “WDM receiver by monolithic integration of an optical preamplifier, waveguide grating router and photodiode array,” Electron. Lett. 31(7), 581–582 (1995).
[CrossRef]

Electron. Lett. (2)

T. Ohyama, Y. Akahori, T. Yamada, R. Kasahara, S. Kamei, M. Ishii, M. Nakamura, H. Oohashi, N. Matsuura, and K. Yamakoshi, “Compact 8-wavelength × 2.5 Gbit/s transmitter/receiver module using PLC hybrid integration technology for WDM interconnections,” Electron. Lett. 38(24), 1576–1578 (2002).
[CrossRef]

M. Zirngibl, C. H. Joyner, and L. W. Stulz, “WDM receiver by monolithic integration of an optical preamplifier, waveguide grating router and photodiode array,” Electron. Lett. 31(7), 581–582 (1995).
[CrossRef]

IEEE Electron Device Lett. (1)

J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G. Q. Lo, and D. L. Kwong, “Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-GE and comparative study of lateral and vertical p-i-n configurations,” IEEE Electron Device Lett. 29(5), 445–448 (2008).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

S. J. Koester, “J. D, Schaub, G. Dehlinger and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic application,” IEEE J. Sel. Top. Quantum Electron. 12, 1489–1502 (2006).
[CrossRef]

IEEE Photon. Technol. Lett. (6)

Q. Fang, J. F. Song, G. Zhang, M. B. Yu, Y. L. Liu, G. Q. Lo, and D. L. Kwong, “Monolithic integration of a multiplexer/demultiplexer with a thermo-optic VOA array on an SOI platform,” IEEE Photon. Technol. Lett. 21(5), 319–321 (2009).
[CrossRef]

W. Tong, V. M. Menon, F. Xia, and S. R. Forrest, “An asymmetric twin waveguide eight-channel polarization-independent arrayed waveguide grating with an integrated photodiode array,” IEEE Photon. Technol. Lett. 16(4), 1170–1172 (2004).
[CrossRef]

M. Kohtoku, H. Sanjoh, S. Oku, Y. Kadota, and Y. Yoshikuni, “Packaged polarization-insensitive WDM monitor with low loss (7.3 dB) and wide tuning range (4.5nm),” IEEE Photon. Technol. Lett. 10(11), 1614–1616 (1998).
[CrossRef]

Y.-T. Han, Y.-J. Park, S.-H. Park, J.-U. Shin, D.-J. Kim, S.-W. Park, S.-H. Song, K.-Y. Jung, D.-J. Lee, W.-Y. Hwang, and H.-K. Sung, “1.25-Gb/s bidirectional transceiver module using 1.5%-∆ silica directional coupler-type WDM,” IEEE Photon. Technol. Lett. 17(11), 2442–2444 (2005).
[CrossRef]

J. Peerlings, R. Riemenschneider, V. N. Kumar, M. Strassner, J. Pfeiffer, V. Scheuer, J. Daleiden, K. Mutamba, S. Herbst, H. L. Hartnagel, and P. Meissner, “Two-chip InGaAs-InP Fabry-perot p-i-n receiver for WDM systems,” IEEE Photon. Technol. Lett. 11(2), 260–262 (1999).
[CrossRef]

B. G. Lee, B. A. Small, Q. Xu, M. Lipson, and K. Bergman, “Characterization of a 4 × 4 Gb/s parallel electronic bus to WDM optical link silicon photonic translator,” IEEE Photon. Technol. Lett. 19(7), 456–458 (2007).
[CrossRef]

IEEE Trans. Electron. Dev. (1)

G. Masini, L. Calace, G. Assanto, H. C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001).
[CrossRef]

J. Lightwave Technol. (1)

Opt. Commun. (1)

Q. Fang, F. Li, and Y. L. Liu, “Compact SOI arrayed waveguide garting demultiplexer with broad spectral response,” Opt. Commun. 258(2), 155–158 (2006).
[CrossRef]

Opt. Express (5)

Other (3)

W. Y. Loh, J. Wang, J. D. Ye, R. Yang, H. S. Nguyen, K. T. Chua, J. F. Song, T. H. Loh, Y. Z. Xiong, S. J. Lee, M. B. Yu, G. Q. Lo and D, L, Kwong, “Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget,” IEEE Electron. Dev. Lett. 28, 984–986 (2007).

M. Oehme, J. Werner and E. Kasper, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89, 071117–1– 071117–3 (2006).

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, and T. Topuria, P. M, Rice and Y. A. Vlasov, “ CMOS-Integrated 40GHz Germanium Waveguide Photodetector for On-chip Optical Interconnects,” Optical Fiber Communication Conference, OMR4 (2009).

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Figures (10)

Fig. 1
Fig. 1

The schematic of the WDM receiver composed of AWG and PD array

Fig. 2
Fig. 2

Images of the processed AWG. Inset 1: Arrayed waveguides; Inset 2: Arrayed waveguide Cross-section; Inset 3: Output transition waveguides.

Fig. 3
Fig. 3

TEM cross-section of the waveguided Ge-on-Si photodetector

Fig. 4
Fig. 4

Optical transmission spectra of the 1 × 32 Si AWG for TE mode

Fig. 5
Fig. 5

Impulse response of photodetector at a bias of −1V and λ = 1550nm. 10 Gbps eye diagram is shown in the inset.

Fig. 6
Fig. 6

Photocurrent spectra of WDM receiver at −7.5dBm optical power entering input waveguide

Fig. 7
Fig. 7

Responsivity of each WGPD of the 32 channels of the DWDM receiver, showing good agreement with the responsivity of the reference stand-alone WGPD.

Fig. 8
Fig. 8

Experimental setup with TIA board for the BER measurement

Fig. 9
Fig. 9

10 Gbps eye diagram of the DWDM receiver (channel 1). Significant jitter and waveform artifacts are added by the TIA. BER at this input optical power is better than 10−12.

Fig. 10
Fig. 10

(Left) BER vs. input optical power at the central wavelength of channel 1, λ1; (Rignt) BER vs. wavelength deviation from λ1

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