Abstract

Plasma power controlled PECVD of SiOx under SiH4/N2O gas mixture with manipulated Si quantum dot (Si-QD) size for tailoring photoluminescent (PL) wavelength is demonstrated. The incomplete decomposition of N2O at high plasma power facilitates Si-rich SiOx deposition to enlarge O/Si composition ratio and to shrink Si-QD size. As RF plasma power increases from 20 to 70 W, the O/Si ratio is increased from 1 to 1.6 and the average Si-QD size is reduced from 4.5 to 1.7, which increases Si-QD density from 3.2 × 1017 to 3.02 × 1018 cm−3 and blue-shifts PL wavelength from 780 to 380 nm.

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  1. L. T. Canham, “Si quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57(10), 1046–1048 (1990).
    [CrossRef]
  2. G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
    [CrossRef]
  3. P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
    [CrossRef]
  4. Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, “Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,” Jpn. J. Appl. Phys. 31(Part 2, No. 3B), L365–L366 (1992).
    [CrossRef]
  5. C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
    [CrossRef]
  6. C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B 48(15), 11024–11036 (1993).
    [CrossRef]
  7. X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell, and U. Kortshagen, “Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach,” Nanotech. 19(24), 245603 (2008).
    [CrossRef]
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    [CrossRef]
  9. J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
    [CrossRef]
  10. H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078 (2002).
    [CrossRef]
  11. J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan, “Influence of the size dispersion on the emission spectra of the Si nanostructures,” Appl. Phys. Lett. 69(9), 1241–1243 (1996).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]

2008 (1)

X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell, and U. Kortshagen, “Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach,” Nanotech. 19(24), 245603 (2008).
[CrossRef]

2006 (1)

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

2002 (2)

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[CrossRef]

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078 (2002).
[CrossRef]

2001 (1)

J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
[CrossRef]

1999 (1)

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

1996 (1)

J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan, “Influence of the size dispersion on the emission spectra of the Si nanostructures,” Appl. Phys. Lett. 69(9), 1241–1243 (1996).
[CrossRef]

1995 (1)

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

1993 (1)

C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B 48(15), 11024–11036 (1993).
[CrossRef]

1992 (1)

Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, “Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,” Jpn. J. Appl. Phys. 31(Part 2, No. 3B), L365–L366 (1992).
[CrossRef]

1990 (1)

L. T. Canham, “Si quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57(10), 1046–1048 (1990).
[CrossRef]

1989 (1)

D. V. Tsu, G. Lucovsky, and B. N. Davidson, “Effect of the neighbors and alloy matrix on SiH stretching vibrations in the amorphous SiOr:H (0<r<2) alloy system,” Phys. Rev. B 40(3), 1795–1805 (1989).
[CrossRef]

1982 (2)

W. B. Pollard and G. Lucovsky, “Phonons in polysilane alloys,” Phys. Rev. B 26(6), 3172–3180 (1982).
[CrossRef]

G. Lucovsky, “A structural interpretation of the infrared-absorption spectra of A-Si-H-O alloys,” Sol. Energy Mater. 8(1-3), 165–175 (1982).
[CrossRef]

Allan, G.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B 48(15), 11024–11036 (1993).
[CrossRef]

Bae, H. S.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078 (2002).
[CrossRef]

Bertoni, S.

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

Bonoldi, L.

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

Campbell, S. A.

X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell, and U. Kortshagen, “Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach,” Nanotech. 19(24), 245603 (2008).
[CrossRef]

Canham, L. T.

L. T. Canham, “Si quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57(10), 1046–1048 (1990).
[CrossRef]

Carter, C. B.

X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell, and U. Kortshagen, “Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach,” Nanotech. 19(24), 245603 (2008).
[CrossRef]

Cerofolini, G. F.

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

Chang, C. W.

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

Cheang-Wong, J. C.

J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
[CrossRef]

Chou, L. J.

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

Chueh, Y. L.

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

Crespo-Sosa, A.

J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
[CrossRef]

Davidson, B. N.

D. V. Tsu, G. Lucovsky, and B. N. Davidson, “Effect of the neighbors and alloy matrix on SiH stretching vibrations in the amorphous SiOr:H (0<r<2) alloy system,” Phys. Rev. B 40(3), 1795–1805 (1989).
[CrossRef]

Delerue, C.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B 48(15), 11024–11036 (1993).
[CrossRef]

Diau, W. G.

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

Fauchet, P. M.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

Forsythe, E. W.

J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan, “Influence of the size dispersion on the emission spectra of the Si nanostructures,” Appl. Phys. Lett. 69(9), 1241–1243 (1996).
[CrossRef]

Ghislotti, G.

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

Gong, J.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[CrossRef]

Grilli, E.

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

Guillois, O.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[CrossRef]

Guzzi, M.

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

Hernandez, J. M.

J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
[CrossRef]

Huisken, F.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[CrossRef]

Im, S.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078 (2002).
[CrossRef]

Jorne, J.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

Khan, B. A.

J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan, “Influence of the size dispersion on the emission spectra of the Si nanostructures,” Appl. Phys. Lett. 69(9), 1241–1243 (1996).
[CrossRef]

Khurgin, J. B.

J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan, “Influence of the size dispersion on the emission spectra of the Si nanostructures,” Appl. Phys. Lett. 69(9), 1241–1243 (1996).
[CrossRef]

Kim, T. G.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078 (2002).
[CrossRef]

Kohno, K.

Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, “Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,” Jpn. J. Appl. Phys. 31(Part 2, No. 3B), L365–L366 (1992).
[CrossRef]

Kortshagen, U.

X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell, and U. Kortshagen, “Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach,” Nanotech. 19(24), 245603 (2008).
[CrossRef]

Kuo, H. C.

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

Lannoo, M.

C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B 48(15), 11024–11036 (1993).
[CrossRef]

Ledoux, G.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[CrossRef]

Lin, C. J.

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

Lin, C. K.

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

Lin, G. R.

C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo, W. G. Diau, L. J. Chou, and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys. 45(No. 2A), 1040–1043 (2006).
[CrossRef]

Liptak, R. W.

X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell, and U. Kortshagen, “Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach,” Nanotech. 19(24), 245603 (2008).
[CrossRef]

Lucovsky, G.

D. V. Tsu, G. Lucovsky, and B. N. Davidson, “Effect of the neighbors and alloy matrix on SiH stretching vibrations in the amorphous SiOr:H (0<r<2) alloy system,” Phys. Rev. B 40(3), 1795–1805 (1989).
[CrossRef]

W. B. Pollard and G. Lucovsky, “Phonons in polysilane alloys,” Phys. Rev. B 26(6), 3172–3180 (1982).
[CrossRef]

G. Lucovsky, “A structural interpretation of the infrared-absorption spectra of A-Si-H-O alloys,” Sol. Energy Mater. 8(1-3), 165–175 (1982).
[CrossRef]

Meda, L.

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

Morales, J. G.

J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
[CrossRef]

Mutti, P.

P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, “Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett. 66(7), 851–853 (1995).
[CrossRef]

Myoren, H.

Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, “Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,” Jpn. J. Appl. Phys. 31(Part 2, No. 3B), L365–L366 (1992).
[CrossRef]

Nowak, J. D.

X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell, and U. Kortshagen, “Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach,” Nanotech. 19(24), 245603 (2008).
[CrossRef]

Oliver, A.

J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
[CrossRef]

Osaka, Y.

Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, “Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,” Jpn. J. Appl. Phys. 31(Part 2, No. 3B), L365–L366 (1992).
[CrossRef]

Pi, X. D.

X. D. Pi, R. W. Liptak, J. D. Nowak, N. P. Wells, C. B. Carter, S. A. Campbell, and U. Kortshagen, “Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach,” Nanotech. 19(24), 245603 (2008).
[CrossRef]

Pollard, W. B.

W. B. Pollard and G. Lucovsky, “Phonons in polysilane alloys,” Phys. Rev. B 26(6), 3172–3180 (1982).
[CrossRef]

Reynaud, C.

G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett. 80(25), 4834–4836 (2002).
[CrossRef]

Rodrigues-Fernandez, L.

J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
[CrossRef]

Roiz, J.

J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, “Optical properties of Ir2+-implanted silica glass,” Nucl. Instrum. Methods Phys. Res. B 175, 490–494 (2001).
[CrossRef]

Song, J. H.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078 (2002).
[CrossRef]

Tompa, G. S.

J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan, “Influence of the size dispersion on the emission spectra of the Si nanostructures,” Appl. Phys. Lett. 69(9), 1241–1243 (1996).
[CrossRef]

Toyomura, F.

Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, “Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,” Jpn. J. Appl. Phys. 31(Part 2, No. 3B), L365–L366 (1992).
[CrossRef]

Tsu, D. V.

D. V. Tsu, G. Lucovsky, and B. N. Davidson, “Effect of the neighbors and alloy matrix on SiH stretching vibrations in the amorphous SiOr:H (0<r<2) alloy system,” Phys. Rev. B 40(3), 1795–1805 (1989).
[CrossRef]

Tsunetomo, K.

Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, “Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,” Jpn. J. Appl. Phys. 31(Part 2, No. 3B), L365–L366 (1992).
[CrossRef]

Wells, N. P.

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M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
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