Abstract

An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (~150 °C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by ~5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is ~2.2 time larger than that of TM polarization.

© 2010 OSA

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  1. Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
    [CrossRef]
  2. Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
    [CrossRef]
  3. D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
    [CrossRef]
  4. R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007).
    [CrossRef]
  5. W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
    [CrossRef]
  6. M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006).
    [CrossRef]
  7. X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
    [CrossRef]
  8. C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
    [CrossRef]
  9. C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
    [CrossRef]
  10. H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
    [CrossRef]
  11. S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004).
    [CrossRef]

2009 (1)

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[CrossRef]

2007 (2)

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007).
[CrossRef]

2006 (2)

D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
[CrossRef]

M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006).
[CrossRef]

2005 (1)

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

2004 (3)

H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
[CrossRef]

S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004).
[CrossRef]

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[CrossRef]

2003 (2)

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[CrossRef]

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Alivov, Y. I.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[CrossRef]

Ataev, B. M.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[CrossRef]

Chen, L. J.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[CrossRef]

Chen, N. S.

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

Chen, T. P.

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

Chuang, R. W.

R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007).
[CrossRef]

Chukichev, M. V.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[CrossRef]

Fan, W. J.

S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004).
[CrossRef]

Fang, R. C.

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Ham, M.-H.

M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006).
[CrossRef]

Hng, H. H.

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
[CrossRef]

Jeong, M. C.

M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006).
[CrossRef]

Kung, P.

D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
[CrossRef]

Lai, L. W.

R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007).
[CrossRef]

Lau, S. P.

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004).
[CrossRef]

H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
[CrossRef]

Lee, C. T.

R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007).
[CrossRef]

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Lee, H. W.

H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
[CrossRef]

Lee, H. Y.

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Leong, E. S. P.

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

Liao, Y.

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Look, D. C.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[CrossRef]

Lu, M. Y.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[CrossRef]

Minder, K.

D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
[CrossRef]

Myoung, J.-M.

M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006).
[CrossRef]

Oh, B.-Y.

M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006).
[CrossRef]

Park, W. I.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[CrossRef]

Pita, K.

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

Razeghi, M.

D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
[CrossRef]

Rogers, D. J.

D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
[CrossRef]

Tay, B. K.

H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
[CrossRef]

Teherani, F. H.

D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
[CrossRef]

Tse, K. Y.

H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
[CrossRef]

Van Nostrand, J. E.

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[CrossRef]

Wang, G. Z.

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Wang, Y. G.

H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
[CrossRef]

Wang, Z. L.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[CrossRef]

Wu, Q. H.

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Wu, R. X.

R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007).
[CrossRef]

Xu, B.

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Yang, H. Y.

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

Yasan, A.

D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
[CrossRef]

Yi, G. C.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[CrossRef]

Yu, Q. X.

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

Yu, S. F.

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004).
[CrossRef]

Yuen, C.

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004).
[CrossRef]

Zhang, X. M.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[CrossRef]

Zhang, Y.

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[CrossRef]

Adv. Mater. (2)

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[CrossRef]

X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[CrossRef]

Appl. Phys. Lett. (6)

M. C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, “Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes,” Appl. Phys. Lett. 88(20), 202105–202103 (2006).
[CrossRef]

Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003).
[CrossRef]

Q. X. Yu, B. Xu, Q. H. Wu, Y. Liao, G. Z. Wang, R. C. Fang, H. Y. Lee, and C. T. Lee, “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode,” Appl. Phys. Lett. 83(23), 4713–4715 (2003).
[CrossRef]

D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, “Electroluminescence at 375 nm from a ZnO/GaN:Mg/c-Al2O3 heterojunction light emitting diode,” Appl. Phys. Lett. 88(14), 141918–141913 (2006).
[CrossRef]

R. W. Chuang, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique,” Appl. Phys. Lett. 91(23), 231113–231113 (2007).
[CrossRef]

C. Yuen, S. F. Yu, E. S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng, “Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer,” Appl. Phys. Lett. 86(3), 031112–031113 (2005).
[CrossRef]

J. Appl. Phys. (1)

C. Yuen, S. F. Yu, E. S. P. Leong, S. P. Lau, K. Pita, H. Y. Yang, and T. P. Chen, “Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique,” J. Appl. Phys. 101(9), 094905–094907 (2007).
[CrossRef]

J. Cryst. Growth (1)

H. W. Lee, S. P. Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, and B. K. Tay, “Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique,” J. Cryst. Growth 268(3–4), 596–601 (2004).
[CrossRef]

J. Quantum Electron. (1)

S. F. Yu, C. Yuen, S. P. Lau, and W. J. Fan, “Design and Fabrication of Zinc Oxide Thin-Film Ridge Waveguides on Silicon Substrate with Ultraviolet Amplified Spontaneous Emission,” J. Quantum Electron. 40(4), 406–412 (2004).
[CrossRef]

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Figures (6)

Fig. 1
Fig. 1

(a) Schematic of n-ZnO:Al/i-ZnO/p-GaN heterojunction LED with rib waveguide. (b) The scanning electron microscope image of the top view of the LED.

Fig. 2
Fig. 2

EL spectra of the heterojunction LED with rib waveguide. The insert shows the PL spectra observed from p-GaN and i-ZnO layers.

Fig. 3
Fig. 3

Photographs of (a) the heterojunction LED with rib waveguide and (b) its corresponding EL emission image.

Fig. 4
Fig. 4

(a). I-V curves of the LEDs with and without a rib waveguide. The inset shows the I-V characteristics of the Ni-Ni electrodes on n-ZnO and Au-Au electrodes on p-GaN:Mg/sapphire substrate. (b) L-V curves of the diode with and without a rib waveguide. The insert shows the corresponding near field profile.

Fig. 5
Fig. 5

(a) L-V curves for the two polarizations of the LED without rib waveguide. (b) Corresponding EL spectra for the two polarizations with bias at 5V (A), 7V (B) and 9V (C).

Fig. 6
Fig. 6

(a) L-V curves for the two polarizations of the LED with rib waveguide. The insert shows the near field profile in TE and TM mode of the rib LED. (b) Corresponding EL spectra for the two polarizations with bias at 5V (A), 7V (B) and 9V (C).

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