Abstract

This study discusses the effect of spin-polarized injection and photo-ionization on MnZnO films formed on the surface of GaN-based light-emitting diodes (LEDs). In a magnetic field, the optical output power of GaN-based LEDs increased by about 60% and 50% at injection currents of 20 and 100 mA, respectively. Spin-polarized injection from a MnZnO film and photo-ionization in GaN-based LED can efficiently improve the optical output power of a GaN-based LED. At forward bias of 3.4 V, the forward current of GaN-based LED with MnZnO film in a magnetic field of 0.5 T includes an injection current of 33.71 mA, spin-polarized current of 0.97 mA, and photo-ionized current of 0.4 mA.

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  1. K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
    [CrossRef]
  2. W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
    [CrossRef]
  3. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
    [CrossRef]
  4. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
    [CrossRef]
  5. L. C. Chen, C. K. Wang, J. B. Huang, and L. S. Hong, “A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode,” Nanotechnology 20(8), 085303 (2009).
    [CrossRef] [PubMed]
  6. H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
    [CrossRef] [PubMed]
  7. S. Datta and B. Das, “Electronic analog of the electro-optic modulator,” Appl. Phys. Lett. 56(7), 665 (1990).
    [CrossRef]
  8. S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device,” Phys. Rev. B 60(11), 7764–7767 (1999).
    [CrossRef]
  9. C. A. C. Bosco, D. Snouck, P. Van Dorpe, W. Van Roy, and B. Koopmans, “Bias-dependent spin relaxation in a Spin-LED,” Mater. Sci. Eng. B 126(2-3), 107–111 (2006).
    [CrossRef]
  10. C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
    [CrossRef]
  11. M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
    [CrossRef] [PubMed]
  12. L. C. Chen and M. I. Lu, “Magneto-optical multiplication effects in ZnO/SiO2/Si photodiodes,” Scr. Mater. 61(8), 781–784 (2009).
    [CrossRef]
  13. F. P. Wang, B. Minemar, and M. Ahlström, “Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAs,” Phys. Rev. B 39(15), 11195–11198 (1989).
    [CrossRef]
  14. I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
    [CrossRef]

2009 (2)

L. C. Chen, C. K. Wang, J. B. Huang, and L. S. Hong, “A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode,” Nanotechnology 20(8), 085303 (2009).
[CrossRef] [PubMed]

L. C. Chen and M. I. Lu, “Magneto-optical multiplication effects in ZnO/SiO2/Si photodiodes,” Scr. Mater. 61(8), 781–784 (2009).
[CrossRef]

2008 (2)

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
[CrossRef]

2006 (3)

C. A. C. Bosco, D. Snouck, P. Van Dorpe, W. Van Roy, and B. Koopmans, “Bias-dependent spin relaxation in a Spin-LED,” Mater. Sci. Eng. B 126(2-3), 107–111 (2006).
[CrossRef]

M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
[CrossRef] [PubMed]

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

2005 (1)

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

2004 (1)

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

2001 (2)

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
[CrossRef] [PubMed]

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

1999 (1)

S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device,” Phys. Rev. B 60(11), 7764–7767 (1999).
[CrossRef]

1990 (1)

S. Datta and B. Das, “Electronic analog of the electro-optic modulator,” Appl. Phys. Lett. 56(7), 665 (1990).
[CrossRef]

1989 (1)

F. P. Wang, B. Minemar, and M. Ahlström, “Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAs,” Phys. Rev. B 39(15), 11195–11198 (1989).
[CrossRef]

Ahlström, M.

F. P. Wang, B. Minemar, and M. Ahlström, “Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAs,” Phys. Rev. B 39(15), 11195–11198 (1989).
[CrossRef]

Bao, K.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Barnes, C. H. W.

S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device,” Phys. Rev. B 60(11), 7764–7767 (1999).
[CrossRef]

Bian, L.

M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
[CrossRef] [PubMed]

Bosco, C. A. C.

C. A. C. Bosco, D. Snouck, P. Van Dorpe, W. Van Roy, and B. Koopmans, “Bias-dependent spin relaxation in a Spin-LED,” Mater. Sci. Eng. B 126(2-3), 107–111 (2006).
[CrossRef]

Buyanova, I. A.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Chen, L. C.

L. C. Chen, C. K. Wang, J. B. Huang, and L. S. Hong, “A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode,” Nanotechnology 20(8), 085303 (2009).
[CrossRef] [PubMed]

L. C. Chen and M. I. Lu, “Magneto-optical multiplication effects in ZnO/SiO2/Si photodiodes,” Scr. Mater. 61(8), 781–784 (2009).
[CrossRef]

Chen, W. M.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Chen, Y.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Chow, P. P.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Dabiran, A. M.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Dai, T.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Das, B.

S. Datta and B. Das, “Electronic analog of the electro-optic modulator,” Appl. Phys. Lett. 56(7), 665 (1990).
[CrossRef]

Datta, S.

S. Datta and B. Das, “Electronic analog of the electro-optic modulator,” Appl. Phys. Lett. 56(7), 665 (1990).
[CrossRef]

Dong, J. W.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Fang, J. S.

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

Fu, Q.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Gardelis, S.

S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device,” Phys. Rev. B 60(11), 7764–7767 (1999).
[CrossRef]

Ham, M. H.

M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
[CrossRef] [PubMed]

Hanbicki, A. T.

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

Hertog, B.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Hong, L. S.

L. C. Chen, C. K. Wang, J. B. Huang, and L. S. Hong, “A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode,” Nanotechnology 20(8), 085303 (2009).
[CrossRef] [PubMed]

Horng, R. H.

W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
[CrossRef]

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

Huang, J. B.

L. C. Chen, C. K. Wang, J. B. Huang, and L. S. Hong, “A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode,” Nanotechnology 20(8), 085303 (2009).
[CrossRef] [PubMed]

Huang, S. Y.

W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
[CrossRef]

Imada, Y.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

Ivill, M. P.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Jonker, B. T.

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

Kang, X. N.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Kato, M.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

Kioseoglou, G.

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

Koopmans, B.

C. A. C. Bosco, D. Snouck, P. Van Dorpe, W. Van Roy, and B. Koopmans, “Bias-dependent spin relaxation in a Spin-LED,” Mater. Sci. Eng. B 126(2-3), 107–111 (2006).
[CrossRef]

Kostial, H.

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
[CrossRef] [PubMed]

Lee, C. E.

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

Li, C. H.

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

Lian, G. J.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Lin, S. H.

W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
[CrossRef]

Lin, W. Y.

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

Linfield, E. H.

S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device,” Phys. Rev. B 60(11), 7764–7767 (1999).
[CrossRef]

Lu, M. I.

L. C. Chen and M. I. Lu, “Magneto-optical multiplication effects in ZnO/SiO2/Si photodiodes,” Scr. Mater. 61(8), 781–784 (2009).
[CrossRef]

Mallory, R.

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

Minemar, B.

F. P. Wang, B. Minemar, and M. Ahlström, “Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAs,” Phys. Rev. B 39(15), 11195–11198 (1989).
[CrossRef]

Myoung, J. M.

M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
[CrossRef] [PubMed]

Norton, D. P.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Ohuchi, Y.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

Okagawa, H.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

Osinsky, A.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Park, Y.

M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
[CrossRef] [PubMed]

Pate, R.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Pearton, S. J.

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Petrou, A.

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

Ploog, K. H.

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
[CrossRef] [PubMed]

Ramsteiner, M.

M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
[CrossRef] [PubMed]

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
[CrossRef] [PubMed]

Ritchie, D. A.

S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device,” Phys. Rev. B 60(11), 7764–7767 (1999).
[CrossRef]

Schönherr, H. P.

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
[CrossRef] [PubMed]

Shih, W. C.

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

Smith, C. G.

S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device,” Phys. Rev. B 60(11), 7764–7767 (1999).
[CrossRef]

Snouck, D.

C. A. C. Bosco, D. Snouck, P. Van Dorpe, W. Van Roy, and B. Koopmans, “Bias-dependent spin relaxation in a Spin-LED,” Mater. Sci. Eng. B 126(2-3), 107–111 (2006).
[CrossRef]

Sun, Y. J.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Tadatomo, K.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

Taguchi, T.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

Tsunekawa, T.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

Van Dorpe, P.

C. A. C. Bosco, D. Snouck, P. Van Dorpe, W. Van Roy, and B. Koopmans, “Bias-dependent spin relaxation in a Spin-LED,” Mater. Sci. Eng. B 126(2-3), 107–111 (2006).
[CrossRef]

Van Roy, W.

C. A. C. Bosco, D. Snouck, P. Van Dorpe, W. Van Roy, and B. Koopmans, “Bias-dependent spin relaxation in a Spin-LED,” Mater. Sci. Eng. B 126(2-3), 107–111 (2006).
[CrossRef]

van‘t Erve, O. M. J.

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

Wang, C. K.

L. C. Chen, C. K. Wang, J. B. Huang, and L. S. Hong, “A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode,” Nanotechnology 20(8), 085303 (2009).
[CrossRef] [PubMed]

Wang, F. P.

F. P. Wang, B. Minemar, and M. Ahlström, “Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAs,” Phys. Rev. B 39(15), 11195–11198 (1989).
[CrossRef]

Wang, W. K.

W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
[CrossRef]

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

Wassermeier, M.

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
[CrossRef] [PubMed]

Wen, K. S.

W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
[CrossRef]

Wuu, D. S.

W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
[CrossRef]

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

Xiong, G. C.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Yasar, M.

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

Yoon, S.

M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
[CrossRef] [PubMed]

Zhang, B.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Zhang, G. Y.

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

Zhu, H. J.

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
[CrossRef] [PubMed]

Appl. Phys. Lett. (3)

K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, “Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off,” Appl. Phys. Lett. 92(14), 141104 (2008).
[CrossRef]

S. Datta and B. Das, “Electronic analog of the electro-optic modulator,” Appl. Phys. Lett. 56(7), 665 (1990).
[CrossRef]

C. H. Li, G. Kioseoglou, O. M. J. van‘t Erve, A. T. Hanbicki, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes,” Appl. Phys. Lett. 85(9), 1544 (2004).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett. 17(2), 288–290 (2005).
[CrossRef]

J. Phys. Chem. Solids (1)

W. K. Wang, D. S. Wuu, S. H. Lin, S. Y. Huang, K. S. Wen, and R. H. Horng, “Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates,” J. Phys. Chem. Solids 69(2-3), 714–718 (2008).
[CrossRef]

J. Phys. Condens. Matter (1)

M. H. Ham, S. Yoon, Y. Park, L. Bian, M. Ramsteiner, and J. M. Myoung, “Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes,” J. Phys. Condens. Matter 18(32), 7703–7708 (2006).
[CrossRef] [PubMed]

J. Vac. Sci. Technol. B (1)

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, and P. P. Chow, “Optical characterization of ZnMnO-based dilute magnetic semiconductor structures,” J. Vac. Sci. Technol. B 24(1), 259 (2006).
[CrossRef]

Jpn. J. Appl. Phys. (1)

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40(Part 2, No. 6B), L583–L585 (2001).
[CrossRef]

Mater. Sci. Eng. B (1)

C. A. C. Bosco, D. Snouck, P. Van Dorpe, W. Van Roy, and B. Koopmans, “Bias-dependent spin relaxation in a Spin-LED,” Mater. Sci. Eng. B 126(2-3), 107–111 (2006).
[CrossRef]

Nanotechnology (1)

L. C. Chen, C. K. Wang, J. B. Huang, and L. S. Hong, “A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode,” Nanotechnology 20(8), 085303 (2009).
[CrossRef] [PubMed]

Phys. Rev. B (2)

S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device,” Phys. Rev. B 60(11), 7764–7767 (1999).
[CrossRef]

F. P. Wang, B. Minemar, and M. Ahlström, “Mechanisms for the optically detected magnetic resonance background signal in epitaxial GaAs,” Phys. Rev. B 39(15), 11195–11198 (1989).
[CrossRef]

Phys. Rev. Lett. (1)

H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. P. Schönherr, and K. H. Ploog, “Room-temperature spin injection from Fe into GaAs,” Phys. Rev. Lett. 87(1), 016601 (2001).
[CrossRef] [PubMed]

Scr. Mater. (1)

L. C. Chen and M. I. Lu, “Magneto-optical multiplication effects in ZnO/SiO2/Si photodiodes,” Scr. Mater. 61(8), 781–784 (2009).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

Structure of MnZnO/GaN-based LED in a magnetic field.

Fig. 2
Fig. 2

Measured I-V curve of MnZnO/GaN-based LED with and without an applied magnetic field, and schematic diagram of the band profile. The inset of the Fig. 2(b) shows the images at injection current of 20 mA.

Fig. 3
Fig. 3

Measured L-I curve of GaN LED both with and without MnZnO film in a magnetic field.

Fig. 4
Fig. 4

EL measurement of the GaN-based LEDs at different inject current: (a) without magnetic field, without MnZnO film, (b) with magnetic field, without MnZnO film, (c) without magnetic field, with MnZnO film; and (d) with magnetic field, with MnZnO film.

Fig. 5
Fig. 5

RT EL spectra from the spin-polarized GaN-based LED for applied magnetic field of zero and 0.5 T, analyzed to identify σ+ and σ- polarization.

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

I T o t a l = I D + I M a g n e t o o p t i c a l ,
I M a g n e t o o p t i c a l = I P h o t o i o n i z e d + I S p i n p o l a r i z e d ,

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