Abstract

We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.

© 2010 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
    [CrossRef]
  2. N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
    [CrossRef]
  3. S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009).
    [CrossRef]
  4. J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
    [CrossRef]
  5. S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
    [CrossRef]
  6. V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
    [CrossRef]
  7. L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
    [CrossRef]
  8. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
    [CrossRef]
  9. J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
    [CrossRef] [PubMed]
  10. T. Leinonen, A. Härkönen, V.-M. Korpijärvi, M. Guina, R.J. Epstein, J.T. Murray, and G.J. Fetzer, “High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm,” SPIE Photon. Europe Proc. 7720, 772016–1–772016–7, 12– 16 April 2010, Brussels.
  11. M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext .
    [CrossRef]
  12. C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990).
    [PubMed]
  13. C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
    [CrossRef] [PubMed]
  14. C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
    [CrossRef]
  15. D. B. Calia, Y. Feng, W. Hackenberg, R. Holzlöhner, L. Taylor, and S. Lewis, “Laser development for sodium laser guide stars at ESO”, The Messenger, 139, 12–19 (2009), http://www.eso.org/sci/publications/messenger/archive/no.139-mar10/messenger-no139-12-19.pdf .
  16. A. Giesen and J. Speiser, ““Fifteen years of work on thin-disk lasers: results and scaling laws”, IEEE J. of Select,” Top. in Quantum Electron. 13(3), 598–609 (2007).
    [CrossRef]
  17. E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
    [CrossRef]
  18. R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
    [CrossRef]
  19. J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
    [CrossRef]
  20. S. Giet, A. J. Kemp, D. Burns, S. Calvez, M. D. Dawson, S. Suomalainen, A. Härkönen, M. Guina, O. Okhotnikov, and M. Pessa, “Comparison of thermal management techniques for semiconductor disk lasers”, Proceedings SPIE 6871, Solid State Lasers: Technology and Devices, 687115 (2008).

2009

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009).
[CrossRef]

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext .
[CrossRef]

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

2008

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

2007

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

A. Giesen and J. Speiser, ““Fifteen years of work on thin-disk lasers: results and scaling laws”, IEEE J. of Select,” Top. in Quantum Electron. 13(3), 598–609 (2007).
[CrossRef]

2005

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
[CrossRef] [PubMed]

2004

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

2003

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

2002

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

1997

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

1990

C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990).
[PubMed]

Abram, R.

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

An, K.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Avicola, K.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Barber, Z. W.

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
[CrossRef] [PubMed]

Bedford, R.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Beeman, B. V.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Bissinger, H. D.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Blodi, C. F.

C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990).
[PubMed]

Brase, J. M.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Burns, D.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Calvez, S.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009).
[CrossRef]

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Dawson, M. D.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009).
[CrossRef]

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Diddams, S. A.

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
[CrossRef] [PubMed]

Dumitrescu, M.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

Erbert, G. V.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Fallahi, M.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Fan, L.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Ferguson, A. I.

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Folk, J. C.

C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990).
[PubMed]

Fortier, T. M.

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
[CrossRef] [PubMed]

Friedmann, H. W.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Gavel, D. T.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Giesen, A.

A. Giesen and J. Speiser, ““Fifteen years of work on thin-disk lasers: results and scaling laws”, IEEE J. of Select,” Top. in Quantum Electron. 13(3), 598–609 (2007).
[CrossRef]

Guina, M.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext .
[CrossRef]

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009).
[CrossRef]

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Hader, J.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Härkönen, A.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext .
[CrossRef]

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Hastie, J. E.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009).
[CrossRef]

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Hessenius, C.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Hollberg, L.

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
[CrossRef] [PubMed]

Hopkins, J. M.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Hopkins, J.-M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Hoyt, C. W.

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
[CrossRef] [PubMed]

Jeon, C. W.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Jouhti, T.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

Kanz, K.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Kitatani, T.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

Koch, S.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Kondow, M.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

Konttinen, J.

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

Korpijärvi, V.-M.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Kudrawiec, R.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Larson, M. C.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

Laukkanen, P.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

Leinonen, T.

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext .
[CrossRef]

Li, H.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Li, W.

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

Liu, M. C.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Macintosh, B.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Max, C. E.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Misiewicz, J.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

Moloney, J. V.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Murray, J. T.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Nakahara, K.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

Nakatsuka, S.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

Neeb, K. P.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Oates, C. W.

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
[CrossRef] [PubMed]

Okai, M.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

Okhotnikov, O.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

Okhotnikov, O. G.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009).
[CrossRef]

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Olivier, S. S.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Pakarinen, J.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

Patience, J.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Pavelescu, E.-M.

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

Peng, C. S.

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

Pessa, M.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext .
[CrossRef]

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

Poloczek, P.

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

Pulido, J. S.

C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990).
[PubMed]

Puustinen, J.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

Rattunde, M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Rautiainen, J.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Riis, E.

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

Russell, S. R.

C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990).
[PubMed]

Schulz, N.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Smith, S. A.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Spânulescu, S.

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

Speiser, J.

A. Giesen and J. Speiser, ““Fifteen years of work on thin-disk lasers: results and scaling laws”, IEEE J. of Select,” Top. in Quantum Electron. 13(3), 598–609 (2007).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Stolz, W.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

Sun, H. D.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Tukiainen, A.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Tuomisto, P.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Uomi, K.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

Vetter, S. L.

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

Wagner, J.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Waltjen, K. E.

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Yazawa, Y.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

Appl. Phys. Lett.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
[CrossRef]

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu, “Effects of insertion of strain-mediating layers on luminescence properties of 1.3-µm GaInNAs/GaNAs/GaAs quantum-well structures,” Appl. Phys. Lett. 80(17), 3054 (2002).
[CrossRef]

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, and M. Pessa, “The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells,” Appl. Phys. Lett. 95(26), 261909 (2009).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: a novel material for long wavelength semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron. 3(3), 719–730 (1997).
[CrossRef]

IEEE Photon. Technol. Lett.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, “0.5-W single transversemode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett. 15(7), 894–896 (2003).
[CrossRef]

IET Electron. Lett.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” IET Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

S. L. Vetter, J. E. Hastie, V.-M. Korpijärvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, and M. D. Dawson, “Short-wavelength GaInNAs/GaAs semiconductor disk lasers,” IET Electron. Lett. 44(18), 1069–1070 (2008).
[CrossRef]

J. Cryst. Growth

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Laser Photon. Rev.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Laser Photon.Rev.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon.Rev. 3(5), 407–434 (2009).
[CrossRef]

N. J. Phys.

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” N. J. Phys. 11(12), 125019 (2009), http://iopscience.iop.org/1367-2630/11/12/125019/fulltext .
[CrossRef]

Ophthalmology

C. F. Blodi, S. R. Russell, J. S. Pulido, and J. C. Folk, “Direct and feeder vessel photocoagulation of retinal angiomas with dye yellow laser,” Ophthalmology 97(6), 791–795, discussion 796–797 (1990).
[PubMed]

Opt. Express

J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, “2.7 W tunable orange-red GaInNAs semiconductor disk laser,” Opt. Express 15(26), 18345–18350 (2007).
[CrossRef] [PubMed]

Phys. Rev. Lett.

C. W. Hoyt, Z. W. Barber, C. W. Oates, T. M. Fortier, S. A. Diddams, and L. Hollberg, “Observation and absolute frequency measurements of the 1S0-3P0 optical clock transition in neutral ytterbium,” Phys. Rev. Lett. 95(8), 083003 (2005).
[CrossRef] [PubMed]

Science

C. E. Max, S. S. Olivier, H. W. Friedmann, K. An, K. Avicola, B. V. Beeman, H. D. Bissinger, J. M. Brase, G. V. Erbert, D. T. Gavel, K. Kanz, M. C. Liu, B. Macintosh, K. P. Neeb, J. Patience, and K. E. Waltjen, “Image improvement from a sodium-layer laser guide star adaptive optics system,” Science 277(5332), 1649–1652 (1997).
[CrossRef]

Top. in Quantum Electron.

A. Giesen and J. Speiser, ““Fifteen years of work on thin-disk lasers: results and scaling laws”, IEEE J. of Select,” Top. in Quantum Electron. 13(3), 598–609 (2007).
[CrossRef]

Other

D. B. Calia, Y. Feng, W. Hackenberg, R. Holzlöhner, L. Taylor, and S. Lewis, “Laser development for sodium laser guide stars at ESO”, The Messenger, 139, 12–19 (2009), http://www.eso.org/sci/publications/messenger/archive/no.139-mar10/messenger-no139-12-19.pdf .

S. Giet, A. J. Kemp, D. Burns, S. Calvez, M. D. Dawson, S. Suomalainen, A. Härkönen, M. Guina, O. Okhotnikov, and M. Pessa, “Comparison of thermal management techniques for semiconductor disk lasers”, Proceedings SPIE 6871, Solid State Lasers: Technology and Devices, 687115 (2008).

T. Leinonen, A. Härkönen, V.-M. Korpijärvi, M. Guina, R.J. Epstein, J.T. Murray, and G.J. Fetzer, “High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm,” SPIE Photon. Europe Proc. 7720, 772016–1–772016–7, 12– 16 April 2010, Brussels.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (9)

Fig. 1
Fig. 1

Schematic representation of the gain mirror design revealing the positioning of the QWs at the antinodes of the optical field distribution at 1180 nm.

Fig. 2
Fig. 2

Reflectivity and photoluminescence spectra of the gain mirror measured at different temperatures.

Fig. 3
Fig. 3

The cavity design of the SDL (left) and a drawing of the water-cooled microchannel mount (right).

Fig. 4
Fig. 4

The dependence of the mount temperature (TMount ) on the pump power absorbed by the gain mirror during lasing at a constant water flow through the microchannel mount(measurements for pump spot diameter of 320 µm and output coupler transmission of 1.5%).

Fig. 5
Fig. 5

Output characteristics of the 1.18 μm SDL corresponding to output couplers with different transmission. The temperature of the cooling water was set to 16 °C and the diameter of the pump spot was ~320 μm.

Fig. 6
Fig. 6

Variation of the slope efficiency, maximum output power, and the threshold pump power with the output coupling ratio, for a cooling water temperature of 16 °C and a pump spot diameter of ~320 μm. The slope efficiency was determined from linear fit in the range between threshold and a pump power of 20 W.

Fig. 7
Fig. 7

Output characteristics of the 1.18 μm SDL with cooling water temperature set to 1 °C. Pump spot diameter was ~320 μm.

Fig. 8
Fig. 8

Left: Output characteristics of the 1.18 μm SDL for three pump spot sizes. Cooling water temperature was set to 1 °C and the transmission of the output coupler was 1.5%. Right: Typical output spectrum at an output power of 5 W.

Fig. 9
Fig. 9

Frequency doubled output power as a function of absorbed pump power (left), and output spectrum and output beam shape corresponding to 4.4 W of output power (right). Cooling water temperature was set to 1 °C (TMount = 9 °C) during the output power measurement. The output spectrum and beam shape were measured close to room temperature.

Metrics