Abstract

The linear output of lateral photovoltage (LPV) with light position is the main feature of conventional lateral photovoltaic effect (LPE), which can be used to detect small displacement. In this study, we report a novel oscillating LPE in a surface-patterned metal-semiconductor structure, which can be well manipulated by the metal thickness and the comb properties. Compared with the conventional linear LPE, this oscillating LPE not only contributes a considerable higher sensitivity of LPV along the lateral direction, but also shows a distinguishable response to the vertical direction, indicating a new way of detecting two-dimensional displacement with much higher precision.

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  1. J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Proc. IRE 45, 474–483 (1957).
  2. R. H. Willens, “Photoelectronic and electronic properties of Ti/Si amorphous superlattices,” Appl. Phys. Lett. 49(11), 663–665 (1986).
    [CrossRef]
  3. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
    [CrossRef]
  4. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608–1610 (1986).
    [CrossRef]
  5. N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
    [CrossRef]
  6. J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci. Mater. Electron. 12(7), 387–393 (2001).
    [CrossRef]
  7. J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
    [CrossRef]
  8. K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
    [CrossRef]
  9. H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
    [CrossRef]
  10. C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112 (2009).
    [CrossRef]
  11. C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95(26), 263506 (2009).
    [CrossRef]
  12. C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
    [CrossRef] [PubMed]
  13. S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
    [CrossRef]
  14. J. Henry and J. Livingstone, “Thin-Film Amorphous Silicon Position-Sensitive Detectors,” Adv. Mater. 13(12-13), 1022–1026 (2001).
    [CrossRef]
  15. R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49(24), 1647–1648 (1986).
    [CrossRef]

2009 (3)

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112 (2009).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95(26), 263506 (2009).
[CrossRef]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

2008 (2)

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

2007 (1)

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

2004 (1)

J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
[CrossRef]

2001 (2)

J. Henry and J. Livingstone, “Thin-Film Amorphous Silicon Position-Sensitive Detectors,” Adv. Mater. 13(12-13), 1022–1026 (2001).
[CrossRef]

J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci. Mater. Electron. 12(7), 387–393 (2001).
[CrossRef]

1989 (1)

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

1986 (4)

R. H. Willens, “Photoelectronic and electronic properties of Ti/Si amorphous superlattices,” Appl. Phys. Lett. 49(11), 663–665 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608–1610 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49(24), 1647–1648 (1986).
[CrossRef]

Bethea, C. G.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608–1610 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49(24), 1647–1648 (1986).
[CrossRef]

Brasen, D.

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49(24), 1647–1648 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608–1610 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Florez, L. T.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Harbison, J. P.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Henry, J.

J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
[CrossRef]

J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci. Mater. Electron. 12(7), 387–393 (2001).
[CrossRef]

J. Henry and J. Livingstone, “Thin-Film Amorphous Silicon Position-Sensitive Detectors,” Adv. Mater. 13(12-13), 1022–1026 (2001).
[CrossRef]

Jin, K.-J.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Jin, Q. Y.

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

Levine, B. F.

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49(24), 1647–1648 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608–1610 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

Liao, L.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Livingstone, J.

J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
[CrossRef]

J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci. Mater. Electron. 12(7), 387–393 (2001).
[CrossRef]

J. Henry and J. Livingstone, “Thin-Film Amorphous Silicon Position-Sensitive Detectors,” Adv. Mater. 13(12-13), 1022–1026 (2001).
[CrossRef]

Lu, H.-B.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Lu, J. J.

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

Meynadier, M. H.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Nahory, R. E.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Tabatabaie, N.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

Wang, H.

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112 (2009).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95(26), 263506 (2009).
[CrossRef]

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

Wang, Z. H.

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
[CrossRef]

Willens, R. H.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608–1610 (1986).
[CrossRef]

R. H. Willens, “Photoelectronic and electronic properties of Ti/Si amorphous superlattices,” Appl. Phys. Lett. 49(11), 663–665 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49(24), 1647–1648 (1986).
[CrossRef]

Xia, Y. X.

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112 (2009).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95(26), 263506 (2009).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

Xiao, S. Q.

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

Yang, G.-Z.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Yu, C. Q.

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express 17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95(26), 263506 (2009).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112 (2009).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

Zhao, K.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

Adv. Mater. (1)

J. Henry and J. Livingstone, “Thin-Film Amorphous Silicon Position-Sensitive Detectors,” Adv. Mater. 13(12-13), 1022–1026 (2001).
[CrossRef]

Appl. Phys. Lett. (8)

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49(24), 1647–1648 (1986).
[CrossRef]

R. H. Willens, “Photoelectronic and electronic properties of Ti/Si amorphous superlattices,” Appl. Phys. Lett. 49(11), 663–665 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49(22), 1537–1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49(23), 1608–1610 (1986).
[CrossRef]

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55(8), 792–794 (1989).
[CrossRef]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91(8), 081906 (2007).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Giant lateral photovoltaic effect observed in TiO2 dusted metal-semiconductor structure of Ti/TiO2/Si,” Appl. Phys. Lett. 95(14), 141112 (2009).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95(26), 263506 (2009).
[CrossRef]

J. Mater. Sci. Mater. Electron. (1)

J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci. Mater. Electron. 12(7), 387–393 (2001).
[CrossRef]

J. Phys. D Appl. Phys. (1)

J. Henry and J. Livingstone, “Optimizing the response of Schottky barrier position sensitive detectors,” J. Phys. D Appl. Phys. 37(22), 3180–3184 (2004).
[CrossRef]

N. J. Phys. (2)

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si,” N. J. Phys. 10(3), 033018 (2008).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal–oxide–semiconductor structure,” N. J. Phys. 10(9), 093006 (2008).
[CrossRef]

Opt. Express (1)

Other (1)

J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” Proc. IRE 45, 474–483 (1957).

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