Abstract

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 µm represents the best achievement reported to date for this type of lasers.

© 2010 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
  2. N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).
  3. L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).
  4. T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).
  5. T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
  6. J. Rautiainen, I. Krestnikov, M. Butkus, E. U. Rafailov, and O. G. Okhotnikov, “Optically pumped semiconductor quantum dot disk laser operating at 1180 nm,” Opt. Lett. 35(5), 694–696 (2010).
    [PubMed]
  7. J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, “2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser,” Opt. Lett. 35(12), 1935–1937 (2010).
    [PubMed]
  8. M. Guden and J. Piprek, “Material parameters of quaternary III - V semiconductors for multilayer mirrors at 1.55 μm wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).
  9. A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
  10. J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009), pp. 1.
  11. J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
    [PubMed]
  12. J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
  13. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
    [PubMed]
  14. E. J. Saarinen, J. Puustinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “Power-scalable 1.57 µm mode-locked semiconductor disk laser using wafer fusion,” Opt. Lett. 34(20), 3139–3141 (2009).
    [PubMed]
  15. L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, “Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling,” Appl. Phys. Lett. 88(25), 251 117–251 117 (2006).
  16. J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).
  17. S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).
  18. M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).
  19. J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).
  20. M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
    [PubMed]
  21. S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
    [PubMed]
  22. M. Alexiades-Armenakas, “Laser-mediated photodynamic therapy,” Clin. Dermatol. 24(1), 16–25 (2006).
    [PubMed]
  23. M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).
  24. J. Hastie, S. Calvez, M. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
    [PubMed]
  25. L. Morton, J. Hastie, M. Dawson, A. Krysa, and J. Roberts, “1W CW Red VECSEL Frequency-Doubled to Generate 60mW in the Ultraviolet,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2006 and the European Quantum Electronics Conference (Long Beach, California, 2006), pp. 1.
  26. J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).
  27. A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
  28. Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).
  29. R. Smith, “Theory of intracavity optical second-harmonic generation,” IEEE J. Quantum Electron. 6(4), 215–223 (1970).

2010 (3)

2009 (2)

2008 (5)

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[PubMed]

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).

T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

2007 (3)

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

2006 (2)

J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).

M. Alexiades-Armenakas, “Laser-mediated photodynamic therapy,” Clin. Dermatol. 24(1), 16–25 (2006).
[PubMed]

2005 (2)

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

J. Hastie, S. Calvez, M. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[PubMed]

2004 (2)

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[PubMed]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

2002 (2)

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

2000 (1)

Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).

1997 (2)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

1996 (1)

M. Guden and J. Piprek, “Material parameters of quaternary III - V semiconductors for multilayer mirrors at 1.55 μm wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).

1970 (1)

R. Smith, “Theory of intracavity optical second-harmonic generation,” IEEE J. Quantum Electron. 6(4), 215–223 (1970).

Alexiades-Armenakas, M.

M. Alexiades-Armenakas, “Laser-mediated photodynamic therapy,” Clin. Dermatol. 24(1), 16–25 (2006).
[PubMed]

Bedford, R.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Behrend, J.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

Berseth, C. A.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

Berseth, C.-A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

Beyertt, S.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Bimberg, D.

T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

Brown, E. A.

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[PubMed]

Brown, S. B.

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[PubMed]

Burns, D.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

Butkus, M.

Caliman, A.

J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).

E. J. Saarinen, J. Puustinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “Power-scalable 1.57 µm mode-locked semiconductor disk laser using wafer fusion,” Opt. Lett. 34(20), 3139–3141 (2009).
[PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[PubMed]

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

Calvez, S.

J. Hastie, S. Calvez, M. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[PubMed]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

Caprara, A.

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Carlin, J. F.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

Chilla, J.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Dawson, M.

J. Hastie, S. Calvez, M. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[PubMed]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

Doehler, G.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Elm, R.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

Fallahi, M.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Fan, L.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Fernandez, J.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

Germann, T.

T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

Giesen, A.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Gomes, L. A.

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

Govorkov, S.

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Guden, M.

M. Guden and J. Piprek, “Material parameters of quaternary III - V semiconductors for multilayer mirrors at 1.55 μm wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).

Guina, M.

T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

Hader, J.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Hader, J. Ö.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).

Hastie, J.

Heilemann, M.

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Hessenius, C.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Hilbich, S.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

Hopkins, J.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

Hopkins, J.-M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).

Iakovlev, V.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

Jeon, C.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

Jouhti, T.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

Kaneda, Y.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

Kannengiesser, C.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

Kapon, E.

J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[PubMed]

E. J. Saarinen, J. Puustinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “Power-scalable 1.57 µm mode-locked semiconductor disk laser using wafer fusion,” Opt. Lett. 34(20), 3139–3141 (2009).
[PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[PubMed]

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

Karnutsch, C.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Kasper, R.

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Kim, T.

J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).

Koch, S. W.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Konttinen, J.

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

Krestnikov, I.

Kunert, B.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).

Laakso, A.

Lee, J.

J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).

Lee, S.

J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).

Leinonen, T.

Li, H.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Liau, Z.

Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).

Linder, N.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Luft, J.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Lyytikainen, J.

J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).

Lyytikäinen, J.

Mereuta, A.

J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[PubMed]

E. J. Saarinen, J. Puustinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “Power-scalable 1.57 µm mode-locked semiconductor disk laser using wafer fusion,” Opt. Lett. 34(20), 3139–3141 (2009).
[PubMed]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
[PubMed]

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

Mircea, A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

Moloney, J. V.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).

Mueller, J.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

Mueller, M.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Mukherjee, A.

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Murray, J.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

Murray, J. T.

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Nikkinen, J.

J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).

J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, “2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser,” Opt. Lett. 35(12), 1935–1937 (2010).
[PubMed]

Okhotnikov, O.

J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).

T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

Okhotnikov, O. G.

Ostroumov, V.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

Park, Y.

J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).

Pavelescu, E.-M.

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

Peng, C. S.

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

Pessa, M.

J. Hastie, S. Calvez, M. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[PubMed]

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

Piprek, J.

M. Guden and J. Piprek, “Material parameters of quaternary III - V semiconductors for multilayer mirrors at 1.55 μm wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).

Pohl, U.

T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

Puustinen, J.

Rafailov, E. U.

Rattunde, M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).

Rautiainen, J.

Reed, M.

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Royo, P.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

Rudra, A.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

Saarinen, E. J.

Sauer, M.

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Schmid, W.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Schulz, N.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).

Schüttpelz, M.

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Seefeldt, B.

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Seelert, W.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

Shou, Q.

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Sirbu, A.

Smith, R.

R. Smith, “Theory of intracavity optical second-harmonic generation,” IEEE J. Quantum Electron. 6(4), 215–223 (1970).

Smith, S.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

Spinelli, L.

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).

Stolz, W.

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

Streubel, K.

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

Strittmatter, A.

T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

Sun, H.

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

Suruceanu, G.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

Syrbu, A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

Syrbu, A. V.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

Tinnefeld, P.

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Toikkanen, L.

J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-µm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[PubMed]

van de Linde, S.

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Wagner, J.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).

Walker, I.

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[PubMed]

Weiss, E.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Zhou, H.

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Angew. Chem. Int. Ed. Engl. (1)

M. Heilemann, S. van de Linde, M. Schüttpelz, R. Kasper, B. Seefeldt, A. Mukherjee, P. Tinnefeld, and M. Sauer, “Subdiffraction-resolution fluorescence imaging with conventional fluorescent probes,” Angew. Chem. Int. Ed. Engl. 47(33), 6172–6176 (2008).
[PubMed]

Appl. Phys. Lett. (3)

Z. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651 (2000).

L. Fan, C. Hessenius, M. Fallahi, J. Hader, H. Li, J. V. Moloney, W. Stolz, S. W. Koch, J. T. Murray, and R. Bedford, “Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm,” Appl. Phys. Lett. 91(13), 131114 (2007).

J. Lee, S. Lee, T. Kim, and Y. Park, “7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external cavity surface emitting semiconductor laser,” Appl. Phys. Lett. 89(24), 241107 (2006).

Clin. Dermatol. (1)

M. Alexiades-Armenakas, “Laser-mediated photodynamic therapy,” Clin. Dermatol. 24(1), 16–25 (2006).
[PubMed]

Electron. Lett. (2)

J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, “0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm,” Electron. Lett. 40(1), 30–31 (2004).

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).

IEEE J. Quantum Electron. (1)

R. Smith, “Theory of intracavity optical second-harmonic generation,” IEEE J. Quantum Electron. 6(4), 215–223 (1970).

IEEE J. Sel. Top. Quantum Electron. (1)

T. Jouhti, C. S. Peng, E.-M. Pavelescu, J. Konttinen, L. A. Gomes, O. G. Okhotnikov, and M. Pessa, “Strain-compensated GaInNAs structures for 1.3-μm lasers,” IEEE J. Sel. Top. Quantum Electron. 8(4), 787–794 (2002).

IEEE Photon. Technol. Lett. (4)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).

J. Rautiainen, J. Lyytikainen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).

M. Fallahi, L. Fan, Y. Kaneda, C. Hessenius, J. Ö. Hader, H. Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, “5-W yellow laser by intracavity frequency doubling of high-power vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20(20), 1700–1702 (2008).

J. Cryst. Growth (1)

T. Germann, A. Strittmatter, U. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).

Lancet Oncol. (1)

S. B. Brown, E. A. Brown, and I. Walker, “The present and future role of photodynamic therapy in cancer treatment,” Lancet Oncol. 5(8), 497–508 (2004).
[PubMed]

Laser Photonics Rev. (1)

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photonics Rev. 2(3), 160–181 (2008).

Model. Simul. Mater. Sci. Eng. (1)

M. Guden and J. Piprek, “Material parameters of quaternary III - V semiconductors for multilayer mirrors at 1.55 μm wavelength,” Model. Simul. Mater. Sci. Eng. 4(4), 349–357 (1996).

Opt. Express (3)

Opt. Lett. (3)

Proc. SPIE (3)

S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, “New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser,” Proc. SPIE 6451, 64510C (2007).

M. Mueller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S. Beyertt, A. Giesen, and G. Doehler, “Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm,” Proc. SPIE 4649, 265 (2002).

J. Chilla, H. Zhou, E. Weiss, A. Caprara, Q. Shou, S. Govorkov, M. Reed, and L. Spinelli, “Blue and green optically-pumped semiconductor lasers for display,” Proc. SPIE 5740, 41 (2005).

Other (3)

L. Morton, J. Hastie, M. Dawson, A. Krysa, and J. Roberts, “1W CW Red VECSEL Frequency-Doubled to Generate 60mW in the Ultraviolet,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2006 and the European Quantum Electronics Conference (Long Beach, California, 2006), pp. 1.

L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, “Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling,” Appl. Phys. Lett. 88(25), 251 117–251 117 (2006).

J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm,” in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009), pp. 1.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1

The schematic of the 1.3 µm wafer-fused SDL. The spot diameter of the pump beam was ~290 μm at the gain element and the temperature of the gain element was kept at 7 °C. RoC – radius of curvature.

Fig. 2
Fig. 2

Output power of the 1.3 µm wafer-fused SDL pumped at 980 nm.

Fig. 3
Fig. 3

Cavity schematic of the disk laser producing ~3 W at the wavelength of 650 nm by intracavity frequency conversion in the BBO crystal. The temperature of the gain element was kept at 7 °C. The beam diameter on the BBO crystal was varied by changing the distances between the given mirrors. RoC – radius of curvature.

Fig. 4
Fig. 4

The power of red output versus pump power. The beam profile at output of ~3 W is shown in the inset. The beam diameter at BBO crystal was 140 µm and the Rayleigh range 19 mm.

Fig. 5
Fig. 5

The spectra of the frequency doubled output (a) and the fundamental frequency (b) for different pump powers.

Metrics