Abstract

The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga2O3, In2O3, and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.

© 2010 OSA

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  1. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
    [CrossRef] [PubMed]
  2. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
    [CrossRef] [PubMed]
  3. Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
    [CrossRef]
  4. L. F. Ji, Y. J. Jiang, W. Wang, and Z. L. Yu, “Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation,” Appl. Phys. Lett. 85(9), 1577–1579 (2004).
    [CrossRef]
  5. R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
    [CrossRef]
  6. C. C. Wang, Y. M. Cui, G. L. Xie, C. P. Chen, and L. W. Zhang, “Phase separation in La2CuO4+y ceramics probed by dielectric measurements,” Phys. Rev. B 72, 1–6 (2005).
  7. A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
    [CrossRef]
  8. R. G. Zhang, B. Y. Wang, D. Y. Wan, and L. Wei, “Effects of the sulfidation temperature on the structure, composition and optical properties of ZnS films prepared by sulfurizing ZnO films,” Opt. Mater. 27(3), 419–423 (2004).
    [CrossRef]
  9. M.-H. Lin and H.-Y. Lu, “Densification retardation in the sintering of La2O3-doped barium titanate ceramic,” Mater. Sci. Eng. A 323(1-2), 167–176 (2002).
    [CrossRef]
  10. E. Girdauskaite, H. Ullmann, V. Vashook, M. Bulow, and U. Guth, “Ceramic oxides with high oxygen exchange: The system Sr–Co–O,” Solid State Ion. 177(19-25), 1831–1835 (2006).
    [CrossRef]
  11. H.-J. Kweon, G. B. Kim, H. S. Lim, S. S. Nam, and D. G. Park, “Synthesis of LixNi0.85Co0.15O2 by the PVA-precursor method and charge–discharge characteristics of a lithium ion battery using this material as cathode,” J. Power Sources 83(1-2), 84–92 (1999).
    [CrossRef]
  12. I.-K. Jeong, H.-L. Parkb, and S.-I. Mhoa, “Photoluminescence of ZnGa2O4 mixed with InGaZnO4,” Solid State Commun. 108(11), 823–826 (1998).
    [CrossRef]
  13. K. Tominaga, T. Tsuzuki, T. Maruyama, M. Mikawa, and T. Moriga, “Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method,” e-J, Surf. Sci. Nanotech. 7, 273–276 (2009).
    [CrossRef]
  14. X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91(7), 071107 (2007).
    [CrossRef]
  15. F. K. Shan and Y. S. Yu, “Band gap energy of pure and Al-doped ZnO thin films,” J. Eur. Ceram. Soc. 24(6), 1869–1872 (2004).
    [CrossRef]
  16. A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
    [CrossRef]
  17. J. Swiatowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, and P. Marcus, “XPS study of Li ion intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal,” Electrochim. Acta 52(18), 5644–5653 (2007).
    [CrossRef]
  18. G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
    [CrossRef]
  19. L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
    [CrossRef]
  20. X. P. Peng, H. Zang, Z. H. Wang, J. Z. Xu, and Y. Y. Wang, “Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering,” J. Lumin. 128(3), 328–332 (2008).
    [CrossRef]
  21. M. N. Islam, T. B. Ghosh, K. L. Chopra, and H. N. Acharya, “XPS and X-ray diffraction studies of aluminum doped zinc oxide transparent conducting films,” Thin Solid Films 280(1-2), 20–25 (1996).
    [CrossRef]
  22. H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, “Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays,” Nanotechnology 19(7), 075607 (2008).
    [CrossRef] [PubMed]
  23. C. Jung, D. Kim, Y. K. Kang, and D. H. Yoon, “Effect of Heat Treatment on Electrical Properties of Amorphous Oxide Semiconductor In–Ga–Zn–O Film as a Function of Oxygen Flow Rate,” Jpn. J. Appl. Phys. 48, 08HK02(2009)

2009 (2)

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

K. Tominaga, T. Tsuzuki, T. Maruyama, M. Mikawa, and T. Moriga, “Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method,” e-J, Surf. Sci. Nanotech. 7, 273–276 (2009).
[CrossRef]

2008 (3)

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[CrossRef]

X. P. Peng, H. Zang, Z. H. Wang, J. Z. Xu, and Y. Y. Wang, “Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering,” J. Lumin. 128(3), 328–332 (2008).
[CrossRef]

H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, “Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays,” Nanotechnology 19(7), 075607 (2008).
[CrossRef] [PubMed]

2007 (2)

X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91(7), 071107 (2007).
[CrossRef]

J. Swiatowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, and P. Marcus, “XPS study of Li ion intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal,” Electrochim. Acta 52(18), 5644–5653 (2007).
[CrossRef]

2006 (2)

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

E. Girdauskaite, H. Ullmann, V. Vashook, M. Bulow, and U. Guth, “Ceramic oxides with high oxygen exchange: The system Sr–Co–O,” Solid State Ion. 177(19-25), 1831–1835 (2006).
[CrossRef]

2005 (4)

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
[CrossRef]

C. C. Wang, Y. M. Cui, G. L. Xie, C. P. Chen, and L. W. Zhang, “Phase separation in La2CuO4+y ceramics probed by dielectric measurements,” Phys. Rev. B 72, 1–6 (2005).

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

2004 (4)

L. F. Ji, Y. J. Jiang, W. Wang, and Z. L. Yu, “Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation,” Appl. Phys. Lett. 85(9), 1577–1579 (2004).
[CrossRef]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[CrossRef] [PubMed]

R. G. Zhang, B. Y. Wang, D. Y. Wan, and L. Wei, “Effects of the sulfidation temperature on the structure, composition and optical properties of ZnS films prepared by sulfurizing ZnO films,” Opt. Mater. 27(3), 419–423 (2004).
[CrossRef]

F. K. Shan and Y. S. Yu, “Band gap energy of pure and Al-doped ZnO thin films,” J. Eur. Ceram. Soc. 24(6), 1869–1872 (2004).
[CrossRef]

2003 (1)

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

2002 (1)

M.-H. Lin and H.-Y. Lu, “Densification retardation in the sintering of La2O3-doped barium titanate ceramic,” Mater. Sci. Eng. A 323(1-2), 167–176 (2002).
[CrossRef]

1999 (1)

H.-J. Kweon, G. B. Kim, H. S. Lim, S. S. Nam, and D. G. Park, “Synthesis of LixNi0.85Co0.15O2 by the PVA-precursor method and charge–discharge characteristics of a lithium ion battery using this material as cathode,” J. Power Sources 83(1-2), 84–92 (1999).
[CrossRef]

1998 (1)

I.-K. Jeong, H.-L. Parkb, and S.-I. Mhoa, “Photoluminescence of ZnGa2O4 mixed with InGaZnO4,” Solid State Commun. 108(11), 823–826 (1998).
[CrossRef]

1996 (1)

M. N. Islam, T. B. Ghosh, K. L. Chopra, and H. N. Acharya, “XPS and X-ray diffraction studies of aluminum doped zinc oxide transparent conducting films,” Thin Solid Films 280(1-2), 20–25 (1996).
[CrossRef]

Acharya, H. N.

M. N. Islam, T. B. Ghosh, K. L. Chopra, and H. N. Acharya, “XPS and X-ray diffraction studies of aluminum doped zinc oxide transparent conducting films,” Thin Solid Films 280(1-2), 20–25 (1996).
[CrossRef]

Baek, S.

H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, “Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays,” Nanotechnology 19(7), 075607 (2008).
[CrossRef] [PubMed]

Bulow, M.

E. Girdauskaite, H. Ullmann, V. Vashook, M. Bulow, and U. Guth, “Ceramic oxides with high oxygen exchange: The system Sr–Co–O,” Solid State Ion. 177(19-25), 1831–1835 (2006).
[CrossRef]

Chen, C. P.

C. C. Wang, Y. M. Cui, G. L. Xie, C. P. Chen, and L. W. Zhang, “Phase separation in La2CuO4+y ceramics probed by dielectric measurements,” Phys. Rev. B 72, 1–6 (2005).

Chen, L. L.

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

Chopra, K. L.

M. N. Islam, T. B. Ghosh, K. L. Chopra, and H. N. Acharya, “XPS and X-ray diffraction studies of aluminum doped zinc oxide transparent conducting films,” Thin Solid Films 280(1-2), 20–25 (1996).
[CrossRef]

Chu, P. K.

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

Cui, Y. M.

C. C. Wang, Y. M. Cui, G. L. Xie, C. P. Chen, and L. W. Zhang, “Phase separation in La2CuO4+y ceramics probed by dielectric measurements,” Phys. Rev. B 72, 1–6 (2005).

Dalchiele, E. A.

G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
[CrossRef]

Dhar, S.

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

Dhawan, A.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[CrossRef]

X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91(7), 071107 (2007).
[CrossRef]

Ghosh, T. B.

M. N. Islam, T. B. Ghosh, K. L. Chopra, and H. N. Acharya, “XPS and X-ray diffraction studies of aluminum doped zinc oxide transparent conducting films,” Thin Solid Films 280(1-2), 20–25 (1996).
[CrossRef]

Girdauskaite, E.

E. Girdauskaite, H. Ullmann, V. Vashook, M. Bulow, and U. Guth, “Ceramic oxides with high oxygen exchange: The system Sr–Co–O,” Solid State Ion. 177(19-25), 1831–1835 (2006).
[CrossRef]

Gollakota, P.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[CrossRef]

Guerra, D. N.

G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
[CrossRef]

Guth, U.

E. Girdauskaite, H. Ullmann, V. Vashook, M. Bulow, and U. Guth, “Ceramic oxides with high oxygen exchange: The system Sr–Co–O,” Solid State Ion. 177(19-25), 1831–1835 (2006).
[CrossRef]

He, H. P.

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

Hirano, M.

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[CrossRef] [PubMed]

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Hosono, H.

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[CrossRef] [PubMed]

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Islam, M. N.

M. N. Islam, T. B. Ghosh, K. L. Chopra, and H. N. Acharya, “XPS and X-ray diffraction studies of aluminum doped zinc oxide transparent conducting films,” Thin Solid Films 280(1-2), 20–25 (1996).
[CrossRef]

Jeong, I.-K.

I.-K. Jeong, H.-L. Parkb, and S.-I. Mhoa, “Photoluminescence of ZnGa2O4 mixed with InGaZnO4,” Solid State Commun. 108(11), 823–826 (1998).
[CrossRef]

Ji, L. F.

L. F. Ji, Y. J. Jiang, W. Wang, and Z. L. Yu, “Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation,” Appl. Phys. Lett. 85(9), 1577–1579 (2004).
[CrossRef]

Jiang, Y. J.

L. F. Ji, Y. J. Jiang, W. Wang, and Z. L. Yu, “Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation,” Appl. Phys. Lett. 85(9), 1577–1579 (2004).
[CrossRef]

Kamiya, T.

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[CrossRef] [PubMed]

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Kim, G. B.

H.-J. Kweon, G. B. Kim, H. S. Lim, S. S. Nam, and D. G. Park, “Synthesis of LixNi0.85Co0.15O2 by the PVA-precursor method and charge–discharge characteristics of a lithium ion battery using this material as cathode,” J. Power Sources 83(1-2), 84–92 (1999).
[CrossRef]

Klein, L.

J. Swiatowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, and P. Marcus, “XPS study of Li ion intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal,” Electrochim. Acta 52(18), 5644–5653 (2007).
[CrossRef]

Kundaliya, D. C.

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

Kweon, H.-J.

H.-J. Kweon, G. B. Kim, H. S. Lim, S. S. Nam, and D. G. Park, “Synthesis of LixNi0.85Co0.15O2 by the PVA-precursor method and charge–discharge characteristics of a lithium ion battery using this material as cathode,” J. Power Sources 83(1-2), 84–92 (1999).
[CrossRef]

Lee, J.

H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, “Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays,” Nanotechnology 19(7), 075607 (2008).
[CrossRef] [PubMed]

Leinen, D.

G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
[CrossRef]

Lim, H. S.

H.-J. Kweon, G. B. Kim, H. S. Lim, S. S. Nam, and D. G. Park, “Synthesis of LixNi0.85Co0.15O2 by the PVA-precursor method and charge–discharge characteristics of a lithium ion battery using this material as cathode,” J. Power Sources 83(1-2), 84–92 (1999).
[CrossRef]

Lim, S.

H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, “Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays,” Nanotechnology 19(7), 075607 (2008).
[CrossRef] [PubMed]

Lim, S. H.

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

Lin, M.-H.

M.-H. Lin and H.-Y. Lu, “Densification retardation in the sintering of La2O3-doped barium titanate ceramic,” Mater. Sci. Eng. A 323(1-2), 167–176 (2002).
[CrossRef]

Lu, H.-Y.

M.-H. Lin and H.-Y. Lu, “Densification retardation in the sintering of La2O3-doped barium titanate ceramic,” Mater. Sci. Eng. A 323(1-2), 167–176 (2002).
[CrossRef]

Lu, J. G.

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

MacHado, G.

G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
[CrossRef]

Manoharan, S. S.

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

Marcus, P.

J. Swiatowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, and P. Marcus, “XPS study of Li ion intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal,” Electrochim. Acta 52(18), 5644–5653 (2007).
[CrossRef]

Marotti, R. E.

G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
[CrossRef]

Maruyama, T.

K. Tominaga, T. Tsuzuki, T. Maruyama, M. Mikawa, and T. Moriga, “Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method,” e-J, Surf. Sci. Nanotech. 7, 273–276 (2009).
[CrossRef]

Maurice, V.

J. Swiatowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, and P. Marcus, “XPS study of Li ion intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal,” Electrochim. Acta 52(18), 5644–5653 (2007).
[CrossRef]

Mhoa, S.-I.

I.-K. Jeong, H.-L. Parkb, and S.-I. Mhoa, “Photoluminescence of ZnGa2O4 mixed with InGaZnO4,” Solid State Commun. 108(11), 823–826 (1998).
[CrossRef]

Mikawa, M.

K. Tominaga, T. Tsuzuki, T. Maruyama, M. Mikawa, and T. Moriga, “Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method,” e-J, Surf. Sci. Nanotech. 7, 273–276 (2009).
[CrossRef]

Moriga, T.

K. Tominaga, T. Tsuzuki, T. Maruyama, M. Mikawa, and T. Moriga, “Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method,” e-J, Surf. Sci. Nanotech. 7, 273–276 (2009).
[CrossRef]

Muth, J. F.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[CrossRef]

X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91(7), 071107 (2007).
[CrossRef]

Nam, S. S.

H.-J. Kweon, G. B. Kim, H. S. Lim, S. S. Nam, and D. G. Park, “Synthesis of LixNi0.85Co0.15O2 by the PVA-precursor method and charge–discharge characteristics of a lithium ion battery using this material as cathode,” J. Power Sources 83(1-2), 84–92 (1999).
[CrossRef]

Nomura, K.

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[CrossRef] [PubMed]

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Ohta, H.

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[CrossRef] [PubMed]

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Park, D. G.

H.-J. Kweon, G. B. Kim, H. S. Lim, S. S. Nam, and D. G. Park, “Synthesis of LixNi0.85Co0.15O2 by the PVA-precursor method and charge–discharge characteristics of a lithium ion battery using this material as cathode,” J. Power Sources 83(1-2), 84–92 (1999).
[CrossRef]

Parkb, H.-L.

I.-K. Jeong, H.-L. Parkb, and S.-I. Mhoa, “Photoluminescence of ZnGa2O4 mixed with InGaZnO4,” Solid State Commun. 108(11), 823–826 (1998).
[CrossRef]

Peng, X. P.

X. P. Peng, H. Zang, Z. H. Wang, J. Z. Xu, and Y. Y. Wang, “Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering,” J. Lumin. 128(3), 328–332 (2008).
[CrossRef]

Ramos-Barrado, J. R.

G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
[CrossRef]

Sahu, R. K.

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

Salamanca-Riba, L. G.

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

Shan, F. K.

F. K. Shan and Y. S. Yu, “Band gap energy of pure and Al-doped ZnO thin films,” J. Eur. Ceram. Soc. 24(6), 1869–1872 (2004).
[CrossRef]

Shao, L.

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

Song, J.

H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, “Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays,” Nanotechnology 19(7), 075607 (2008).
[CrossRef] [PubMed]

Suresh, A.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[CrossRef]

X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91(7), 071107 (2007).
[CrossRef]

Swiatowska-Mrowiecka, J.

J. Swiatowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, and P. Marcus, “XPS study of Li ion intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal,” Electrochim. Acta 52(18), 5644–5653 (2007).
[CrossRef]

Takagi, A.

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[CrossRef] [PubMed]

Takeda, Y.

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

Tominaga, K.

K. Tominaga, T. Tsuzuki, T. Maruyama, M. Mikawa, and T. Moriga, “Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method,” e-J, Surf. Sci. Nanotech. 7, 273–276 (2009).
[CrossRef]

Tsuzuki, T.

K. Tominaga, T. Tsuzuki, T. Maruyama, M. Mikawa, and T. Moriga, “Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method,” e-J, Surf. Sci. Nanotech. 7, 273–276 (2009).
[CrossRef]

Ueda, K.

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Ullmann, H.

E. Girdauskaite, H. Ullmann, V. Vashook, M. Bulow, and U. Guth, “Ceramic oxides with high oxygen exchange: The system Sr–Co–O,” Solid State Ion. 177(19-25), 1831–1835 (2006).
[CrossRef]

Vashook, V.

E. Girdauskaite, H. Ullmann, V. Vashook, M. Bulow, and U. Guth, “Ceramic oxides with high oxygen exchange: The system Sr–Co–O,” Solid State Ion. 177(19-25), 1831–1835 (2006).
[CrossRef]

Venkatesan, T.

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

Vispute, R. D.

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

Wan, D. Y.

R. G. Zhang, B. Y. Wang, D. Y. Wan, and L. Wei, “Effects of the sulfidation temperature on the structure, composition and optical properties of ZnS films prepared by sulfurizing ZnO films,” Opt. Mater. 27(3), 419–423 (2004).
[CrossRef]

Wang, B. Y.

R. G. Zhang, B. Y. Wang, D. Y. Wan, and L. Wei, “Effects of the sulfidation temperature on the structure, composition and optical properties of ZnS films prepared by sulfurizing ZnO films,” Opt. Mater. 27(3), 419–423 (2004).
[CrossRef]

Wang, C. C.

C. C. Wang, Y. M. Cui, G. L. Xie, C. P. Chen, and L. W. Zhang, “Phase separation in La2CuO4+y ceramics probed by dielectric measurements,” Phys. Rev. B 72, 1–6 (2005).

Wang, H.

H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, “Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays,” Nanotechnology 19(7), 075607 (2008).
[CrossRef] [PubMed]

Wang, W.

L. F. Ji, Y. J. Jiang, W. Wang, and Z. L. Yu, “Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation,” Appl. Phys. Lett. 85(9), 1577–1579 (2004).
[CrossRef]

Wang, Y. Y.

X. P. Peng, H. Zang, Z. H. Wang, J. Z. Xu, and Y. Y. Wang, “Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering,” J. Lumin. 128(3), 328–332 (2008).
[CrossRef]

Wang, Z. H.

X. P. Peng, H. Zang, Z. H. Wang, J. Z. Xu, and Y. Y. Wang, “Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering,” J. Lumin. 128(3), 328–332 (2008).
[CrossRef]

Wei, L.

R. G. Zhang, B. Y. Wang, D. Y. Wan, and L. Wei, “Effects of the sulfidation temperature on the structure, composition and optical properties of ZnS films prepared by sulfurizing ZnO films,” Opt. Mater. 27(3), 419–423 (2004).
[CrossRef]

Wellenius, P.

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[CrossRef]

X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91(7), 071107 (2007).
[CrossRef]

Xie, G. L.

C. C. Wang, Y. M. Cui, G. L. Xie, C. P. Chen, and L. W. Zhang, “Phase separation in La2CuO4+y ceramics probed by dielectric measurements,” Phys. Rev. B 72, 1–6 (2005).

Xu, J. Z.

X. P. Peng, H. Zang, Z. H. Wang, J. Z. Xu, and Y. Y. Wang, “Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering,” J. Lumin. 128(3), 328–332 (2008).
[CrossRef]

Yanagi, H.

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

Ye, Z. Z.

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

Yu, Y. S.

F. K. Shan and Y. S. Yu, “Band gap energy of pure and Al-doped ZnO thin films,” J. Eur. Ceram. Soc. 24(6), 1869–1872 (2004).
[CrossRef]

Yu, Z. L.

L. F. Ji, Y. J. Jiang, W. Wang, and Z. L. Yu, “Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation,” Appl. Phys. Lett. 85(9), 1577–1579 (2004).
[CrossRef]

Zang, H.

X. P. Peng, H. Zang, Z. H. Wang, J. Z. Xu, and Y. Y. Wang, “Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering,” J. Lumin. 128(3), 328–332 (2008).
[CrossRef]

Zanna, S.

J. Swiatowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, and P. Marcus, “XPS study of Li ion intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal,” Electrochim. Acta 52(18), 5644–5653 (2007).
[CrossRef]

Zhang, L. W.

C. C. Wang, Y. M. Cui, G. L. Xie, C. P. Chen, and L. W. Zhang, “Phase separation in La2CuO4+y ceramics probed by dielectric measurements,” Phys. Rev. B 72, 1–6 (2005).

Zhang, R. G.

R. G. Zhang, B. Y. Wang, D. Y. Wan, and L. Wei, “Effects of the sulfidation temperature on the structure, composition and optical properties of ZnS films prepared by sulfurizing ZnO films,” Opt. Mater. 27(3), 419–423 (2004).
[CrossRef]

Zhang, X. Y.

X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91(7), 071107 (2007).
[CrossRef]

Zhao, B. H.

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

Zhu, L. P.

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

Appl. Phys. Lett. (2)

L. F. Ji, Y. J. Jiang, W. Wang, and Z. L. Yu, “Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation,” Appl. Phys. Lett. 85(9), 1577–1579 (2004).
[CrossRef]

X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, and J. F. Muth, “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91(7), 071107 (2007).
[CrossRef]

Chem. Phys. Lett. (1)

L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, “Co-doping effects and electrical transport in In-N doped zinc oxide,” Chem. Phys. Lett. 432(1-3), 352–355 (2006).
[CrossRef]

e-J, Surf. Sci. Nanotech. (1)

K. Tominaga, T. Tsuzuki, T. Maruyama, M. Mikawa, and T. Moriga, “Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method,” e-J, Surf. Sci. Nanotech. 7, 273–276 (2009).
[CrossRef]

Electrochim. Acta (1)

J. Swiatowska-Mrowiecka, V. Maurice, S. Zanna, L. Klein, and P. Marcus, “XPS study of Li ion intercalation in V2O5 thin films prepared by thermal oxidation of vanadium metal,” Electrochim. Acta 52(18), 5644–5653 (2007).
[CrossRef]

J. Eur. Ceram. Soc. (1)

F. K. Shan and Y. S. Yu, “Band gap energy of pure and Al-doped ZnO thin films,” J. Eur. Ceram. Soc. 24(6), 1869–1872 (2004).
[CrossRef]

J. Lumin. (1)

X. P. Peng, H. Zang, Z. H. Wang, J. Z. Xu, and Y. Y. Wang, “Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering,” J. Lumin. 128(3), 328–332 (2008).
[CrossRef]

J. Power Sources (1)

H.-J. Kweon, G. B. Kim, H. S. Lim, S. S. Nam, and D. G. Park, “Synthesis of LixNi0.85Co0.15O2 by the PVA-precursor method and charge–discharge characteristics of a lithium ion battery using this material as cathode,” J. Power Sources 83(1-2), 84–92 (1999).
[CrossRef]

Mater. Sci. Eng. A (1)

M.-H. Lin and H.-Y. Lu, “Densification retardation in the sintering of La2O3-doped barium titanate ceramic,” Mater. Sci. Eng. A 323(1-2), 167–176 (2002).
[CrossRef]

Nanotechnology (1)

H. Wang, S. Baek, J. Song, J. Lee, and S. Lim, “Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays,” Nanotechnology 19(7), 075607 (2008).
[CrossRef] [PubMed]

Nature (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[CrossRef] [PubMed]

Opt. Mater. (1)

R. G. Zhang, B. Y. Wang, D. Y. Wan, and L. Wei, “Effects of the sulfidation temperature on the structure, composition and optical properties of ZnS films prepared by sulfurizing ZnO films,” Opt. Mater. 27(3), 419–423 (2004).
[CrossRef]

Phys. Rev. B (1)

C. C. Wang, Y. M. Cui, G. L. Xie, C. P. Chen, and L. W. Zhang, “Phase separation in La2CuO4+y ceramics probed by dielectric measurements,” Phys. Rev. B 72, 1–6 (2005).

Science (1)

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Solid State Commun. (1)

I.-K. Jeong, H.-L. Parkb, and S.-I. Mhoa, “Photoluminescence of ZnGa2O4 mixed with InGaZnO4,” Solid State Commun. 108(11), 823–826 (1998).
[CrossRef]

Solid State Ion. (1)

E. Girdauskaite, H. Ullmann, V. Vashook, M. Bulow, and U. Guth, “Ceramic oxides with high oxygen exchange: The system Sr–Co–O,” Solid State Ion. 177(19-25), 1831–1835 (2006).
[CrossRef]

Thin Solid Films (6)

A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4,” Thin Solid Films 486(1-2), 38–41 (2005).
[CrossRef]

G. MacHado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, “Indium doped zinc oxide thin films obtained by electrodeposition,” Thin Solid Films 490(2), 124–131 (2005).
[CrossRef]

A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, “Transparent, high mobility InGaZnO thin films deposited by PLD,” Thin Solid Films 516(7), 1326–1329 (2008).
[CrossRef]

Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film,” Thin Solid Films 486(1-2), 28–32 (2005).
[CrossRef]

R. K. Sahu, R. D. Vispute, S. Dhar, D. C. Kundaliya, S. S. Manoharan, T. Venkatesan, S. H. Lim, and L. G. Salamanca-Riba, “Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC,” Thin Solid Films 517(5), 1829–1832 (2009).
[CrossRef]

M. N. Islam, T. B. Ghosh, K. L. Chopra, and H. N. Acharya, “XPS and X-ray diffraction studies of aluminum doped zinc oxide transparent conducting films,” Thin Solid Films 280(1-2), 20–25 (1996).
[CrossRef]

Other (1)

C. Jung, D. Kim, Y. K. Kang, and D. H. Yoon, “Effect of Heat Treatment on Electrical Properties of Amorphous Oxide Semiconductor In–Ga–Zn–O Film as a Function of Oxygen Flow Rate,” Jpn. J. Appl. Phys. 48, 08HK02(2009)

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Figures (6)

Fig. 1
Fig. 1

XRD patterns of IGZO ceramic target

Fig. 2
Fig. 2

XRD pattern of IGZO film and quartz glass substrate

Fig. 3
Fig. 3

Surface morphology of IGZO thin film with different temperature (a) RT; (b) 200 °C

Fig. 4
Fig. 4

Transmission spectra of IGZO thin film at different temperature

Fig. 5
Fig. 5

XPS spectra of IGZO thin films

Fig. 6
Fig. 6

IGZO thin films high resolution XPS spectra. (a) In 3d; (b) Ga 2p; (c) Zn 2p; (d) O 1s

Tables (2)

Tables Icon

Table 1 Electrical properties of IGZO films at different temperature

Tables Icon

Table 2 XPS elemental concentrations of IGZO films

Metrics