Abstract

We show GHz modulation in a 2.5 µm radius silicon micro-ring, with only 150 mV peak-peak drive voltage and an electro-optic modal volume of only 2 µm3. The swing voltage and the micro-ring modulator are the smallest demonstrations so-far in silicon. The presented approach lays the ground work for a new class of high speed low voltage modulators enabling, seamless integration of nanophotonics with low voltage digital CMOS nano-electronics.

© 2010 OSA

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2010

I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O Technology for Tera-Scale Computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[CrossRef]

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[CrossRef] [PubMed]

J. Zhang, T.-Y. Liow, G.-Q. Lo, and D.-L. Kwong, “10Gbps monolithic silicon FTTH transceiver without laser diode for a new PON configuration,” Opt. Express 18(5), 5135–5141 (2010).
[CrossRef] [PubMed]

P. Dong, R. Shafiiha, S. Liao, H. Liang, N. N. Feng, D. Feng, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Wavelength-tunable silicon microring modulator,” Opt. Express 18(11), 10941–10946 (2010).
[CrossRef] [PubMed]

A. Biberman, S. Manipatruni, N. Ophir, L. Chen, M. Lipson, and K. Bergman, “First demonstration of long-haul transmission using silicon microring modulators,” Opt. Express 18(15), 15544–15552 (2010).
[CrossRef] [PubMed]

2009

D. A. B. Miller, “Device Requirements for Optical Interconnects to Silicon Chips,” Proc. IEEE 97, 1166–1185 (2009).
[CrossRef]

A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “The integration of silicon photonics and VLSI electronics for computing systems intra-connect,” Proc. SPIE 7220, 72200V (2009).
[CrossRef]

N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, “Free carrier lifetime modification in silicon,” Proc. SPIE 7220, 722006 (2009), doi:.
[CrossRef]

J. A. Dionne, K. Diest, L. A. Sweatlock, and H. A. Atwater, “PlasMOStor: a metal-oxide-Si field effect plasmonic modulator,” Nano Lett. 9(2), 897–902 (2009).
[CrossRef] [PubMed]

2008

M. J. Dicken, L. A. Sweatlock, D. Pacifici, H. J. Lezec, K. Bhattacharya, and H. A. Atwater, “Electrooptic modulation in thin film barium titanate plasmonic interferometers,” Nano Lett. 8(11), 4048–4052 (2008).
[CrossRef] [PubMed]

2007

2006

L. Zhou and A. W. Poon, “Silicon electro-optic modulators using p-i-n diodes embedded 10-micron-diameter microdisk resonators,” Opt. Express 14(15), 6851–6857 (2006).
[CrossRef] [PubMed]

M. S. Nawrocka, T. Liu, X. Wang, and R. R. Panepucci, “Tunable silicon microring resonator with wide free spectral range,” Appl. Phys. Lett. 89(7), 071110 (2006).
[CrossRef]

2004

C. J. Barrelet, A. B. Greytak, and C. M. Lieber, “Nanowire Photonic Circuit Elements,” Nano Lett. 4(10), 1981–1985 (2004).
[CrossRef]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

2003

2000

Y. Q. Shi, C. Zhang, H. Zhang, J. H. Bechtel, L. R. Dalton, B. H. Robinson, and W. H. Steier, “Low (Sub-1-volt) halfwave voltage polymeric electro-optic modulators achieved by controlling chromophore shape,” Science 288(5463), 119–122 (2000).
[CrossRef]

1987

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
[CrossRef]

Almeida, V. R.

Amberg, P.

Asghari, M.

Atwater, H. A.

J. A. Dionne, K. Diest, L. A. Sweatlock, and H. A. Atwater, “PlasMOStor: a metal-oxide-Si field effect plasmonic modulator,” Nano Lett. 9(2), 897–902 (2009).
[CrossRef] [PubMed]

M. J. Dicken, L. A. Sweatlock, D. Pacifici, H. J. Lezec, K. Bhattacharya, and H. A. Atwater, “Electrooptic modulation in thin film barium titanate plasmonic interferometers,” Nano Lett. 8(11), 4048–4052 (2008).
[CrossRef] [PubMed]

Baehr-Jones, T.

Barrelet, C. J.

C. J. Barrelet, A. B. Greytak, and C. M. Lieber, “Nanowire Photonic Circuit Elements,” Nano Lett. 4(10), 1981–1985 (2004).
[CrossRef]

Bechtel, J. H.

Y. Q. Shi, C. Zhang, H. Zhang, J. H. Bechtel, L. R. Dalton, B. H. Robinson, and W. H. Steier, “Low (Sub-1-volt) halfwave voltage polymeric electro-optic modulators achieved by controlling chromophore shape,” Science 288(5463), 119–122 (2000).
[CrossRef]

Bennett, B.

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
[CrossRef]

Bergman, K.

Bhattacharya, K.

M. J. Dicken, L. A. Sweatlock, D. Pacifici, H. J. Lezec, K. Bhattacharya, and H. A. Atwater, “Electrooptic modulation in thin film barium titanate plasmonic interferometers,” Nano Lett. 8(11), 4048–4052 (2008).
[CrossRef] [PubMed]

Biberman, A.

Blasco, J.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

Block, B. A.

I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O Technology for Tera-Scale Computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[CrossRef]

Chang, P. L. D.

I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O Technology for Tera-Scale Computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[CrossRef]

Chen, L.

Cohen, O.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Cunningham, J. E.

X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[CrossRef] [PubMed]

A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “The integration of silicon photonics and VLSI electronics for computing systems intra-connect,” Proc. SPIE 7220, 72200V (2009).
[CrossRef]

Daldosso, N.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

Dalton, L.

Dalton, L. R.

Y. Q. Shi, C. Zhang, H. Zhang, J. H. Bechtel, L. R. Dalton, B. H. Robinson, and W. H. Steier, “Low (Sub-1-volt) halfwave voltage polymeric electro-optic modulators achieved by controlling chromophore shape,” Science 288(5463), 119–122 (2000).
[CrossRef]

Deane, J. H. B.

N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, “Free carrier lifetime modification in silicon,” Proc. SPIE 7220, 722006 (2009), doi:.
[CrossRef]

Derose, C. T.

Y. Enami, C. T. Derose, D. Mathine, C. Loychik, C. Greenlee, R. A. Norwood, R. D. Kim, J. Luo, Y. Tian, A. K. Y. Jen, and N. Peyghambarian, “Hybrid polymer/sol-gel waveguide modulators with exceptionally large electro-optic coefficients,” Nat. Photonics 1(3), 180–185 (2007).
[CrossRef]

Dicken, M. J.

M. J. Dicken, L. A. Sweatlock, D. Pacifici, H. J. Lezec, K. Bhattacharya, and H. A. Atwater, “Electrooptic modulation in thin film barium titanate plasmonic interferometers,” Nano Lett. 8(11), 4048–4052 (2008).
[CrossRef] [PubMed]

Diest, K.

J. A. Dionne, K. Diest, L. A. Sweatlock, and H. A. Atwater, “PlasMOStor: a metal-oxide-Si field effect plasmonic modulator,” Nano Lett. 9(2), 897–902 (2009).
[CrossRef] [PubMed]

Dionne, J. A.

J. A. Dionne, K. Diest, L. A. Sweatlock, and H. A. Atwater, “PlasMOStor: a metal-oxide-Si field effect plasmonic modulator,” Nano Lett. 9(2), 897–902 (2009).
[CrossRef] [PubMed]

Dong, P.

Enami, Y.

Y. Enami, C. T. Derose, D. Mathine, C. Loychik, C. Greenlee, R. A. Norwood, R. D. Kim, J. Luo, Y. Tian, A. K. Y. Jen, and N. Peyghambarian, “Hybrid polymer/sol-gel waveguide modulators with exceptionally large electro-optic coefficients,” Nat. Photonics 1(3), 180–185 (2007).
[CrossRef]

Fedeli, J. M.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

Feng, D.

Feng, N. N.

Galán, J. V.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

García-Rupérez, J.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

Gardes, F. Y.

N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, “Free carrier lifetime modification in silicon,” Proc. SPIE 7220, 722006 (2009), doi:.
[CrossRef]

Garrido, B.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

Gautier, P.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

Green, W. M.

Greenlee, C.

Y. Enami, C. T. Derose, D. Mathine, C. Loychik, C. Greenlee, R. A. Norwood, R. D. Kim, J. Luo, Y. Tian, A. K. Y. Jen, and N. Peyghambarian, “Hybrid polymer/sol-gel waveguide modulators with exceptionally large electro-optic coefficients,” Nat. Photonics 1(3), 180–185 (2007).
[CrossRef]

Greytak, A. B.

C. J. Barrelet, A. B. Greytak, and C. M. Lieber, “Nanowire Photonic Circuit Elements,” Nano Lett. 4(10), 1981–1985 (2004).
[CrossRef]

Guider, R.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

Gwilliam, R.

N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, “Free carrier lifetime modification in silicon,” Proc. SPIE 7220, 722006 (2009), doi:.
[CrossRef]

Headley, W. R.

N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, “Free carrier lifetime modification in silicon,” Proc. SPIE 7220, 722006 (2009), doi:.
[CrossRef]

Hernández, S.

A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
[CrossRef] [PubMed]

Ho, R.

X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[CrossRef] [PubMed]

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A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “The integration of silicon photonics and VLSI electronics for computing systems intra-connect,” Proc. SPIE 7220, 72200V (2009).
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M. S. Nawrocka, T. Liu, X. Wang, and R. R. Panepucci, “Tunable silicon microring resonator with wide free spectral range,” Appl. Phys. Lett. 89(7), 071110 (2006).
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Y. Enami, C. T. Derose, D. Mathine, C. Loychik, C. Greenlee, R. A. Norwood, R. D. Kim, J. Luo, Y. Tian, A. K. Y. Jen, and N. Peyghambarian, “Hybrid polymer/sol-gel waveguide modulators with exceptionally large electro-optic coefficients,” Nat. Photonics 1(3), 180–185 (2007).
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Manipatruni, S.

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A. Martínez, J. Blasco, P. Sanchis, J. V. Galán, J. García-Rupérez, E. Jordana, P. Gautier, Y. Lebour, S. Hernández, R. Guider, N. Daldosso, B. Garrido, J. M. Fedeli, L. Pavesi, J. Martí, and R. Spano, “Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths,” Nano Lett. 10(4), 1506–1511 (2010).
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Figures (6)

Fig. 1
Fig. 1

a) SEM image of a silicon nanophotonic modulator created by embedding a 2.5 µm micro-ring in a PIN junction. b) Optical Transmission Spectrum of the Micro-ring normalised to non-resonant transmission c) Non-Return-to-Zero optical eye diagrams at 4 Gbps c) NRZ electrical driving signal at 1.4 V peak-peak biased at 0.5 V.

Fig. 2
Fig. 2

a: Measured, simulated and analytical device I-V characteristics (red). b: Electron and hole concentrations in the waveguide (blue) c: Carrier injection per unit voltage (derivative of (b) with respect to voltage)

Fig. 3
Fig. 3

Measured and simulated transient electro-optic device characteristics for the proposed operating conditions. The applied voltage is a square wave from 0.96 to 1.11 V.

Fig. 4
Fig. 4

Eye diagrams with 150 mV drive voltage at 1 Gbit/s for 2.5 µm micro-ring a) Input Voltage signal RF eye diagram with a swing voltage of 150 mV and a bias point at 0.96 V. modulator b) Output optical eye diagram measured from the silicon nanophotonic modulator

Fig. 5
Fig. 5

Simulation of 10 Gbps electro-optic modulator with 500 mVpp drive voltage by decreasing the effective carrier lifetime to 100 ps.

Fig. 6
Fig. 6

Switching frequency of a single staged inverter driven directly with a digital logic level as a function of the drive current. The different colours indicate the switching frequency of the scaled digital layer inverter for various drive currents. A 10 GHz operation can be achieved for drive currents as large as 3 mA.

Equations (4)

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V ( I ) = V t + I R + k T e α log e [ I I 0 + 1 ] ,
Q = I τ r e c o m b = I τ 0 1 + ( Q Q 0 ) n ,
d Q d V = d Q d I . d I d V = G ( V ) . τ 0 1 + 1 + Q Q 0 ,
t s w = 3 C n V n I n . I mod u l a t o r I n + 1.5. C n V n I n ,

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