D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
L. Colace, G. M. A. Altieri, and G. Assanto, “Waveguide photodetectors for the near-infrared in polycrystalline germanium on silicon,” IEEE Photon. Technol. Lett. 18(9), 1094–1096 (2006).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
L. Colace, G. M. A. Altieri, and G. Assanto, “Waveguide photodetectors for the near-infrared in polycrystalline germanium on silicon,” IEEE Photon. Technol. Lett. 18(9), 1094–1096 (2006).
[Crossref]
S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref]
[PubMed]
J. Van Campenhout, W. M. J. Green, S. Assefa, and Y. A. Vlasov, “Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks,” Opt. Express 17(26), 24020–24029 (2009).
[Crossref]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
L. Zhang, Y. Li, J.-Y. Yang, M. Song, R. G. Beausoleil, and A. E. Willner, “Silicon-based microring resonator modulators for intensity modulation,” IEEE Sel. Top. Quantum Electron. 16(1), 149–158 (2010).
[Crossref]
M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref]
[PubMed]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref]
[PubMed]
L. Colace, G. M. A. Altieri, and G. Assanto, “Waveguide photodetectors for the near-infrared in polycrystalline germanium on silicon,” IEEE Photon. Technol. Lett. 18(9), 1094–1096 (2006).
[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
Y. Goebuchi, T. Kato, and Y. Kokubun, “Fast and stable wavelength-selective switch using double-series coupled dielectric microring resonator,” IEEE Photon. Technol. Lett. 18(3), 538–540 (2006).
[Crossref]
G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005).
[Crossref]
Y. Goebuchi, T. Kato, and Y. Kokubun, “Fast and stable wavelength-selective switch using double-series coupled dielectric microring resonator,” IEEE Photon. Technol. Lett. 18(3), 538–540 (2006).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
Y. Goebuchi, T. Kato, and Y. Kokubun, “Fast and stable wavelength-selective switch using double-series coupled dielectric microring resonator,” IEEE Photon. Technol. Lett. 18(3), 538–540 (2006).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
L. Zhang, Y. Li, J.-Y. Yang, M. Song, R. G. Beausoleil, and A. E. Willner, “Silicon-based microring resonator modulators for intensity modulation,” IEEE Sel. Top. Quantum Electron. 16(1), 149–158 (2010).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
H. L. R. Lira, S. Manipatruni, and M. Lipson, “Broadband hitless silicon electro-optic switch for on-chip optical networks,” Opt. Express 17(25), 22271–22280 (2009).
[Crossref]
L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref]
[PubMed]
B. Schmidt, Q. Xu, J. Shakya, S. Manipatruni, and M. Lipson, “Compact electro-optic modulator on silicon-on-insulator substrates using cavities with ultra-small modal volumes,” Opt. Express 15(6), 3140–3148 (2007).
[Crossref]
[PubMed]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
H. L. R. Lira, S. Manipatruni, and M. Lipson, “Broadband hitless silicon electro-optic switch for on-chip optical networks,” Opt. Express 17(25), 22271–22280 (2009).
[Crossref]
B. Schmidt, Q. Xu, J. Shakya, S. Manipatruni, and M. Lipson, “Compact electro-optic modulator on silicon-on-insulator substrates using cavities with ultra-small modal volumes,” Opt. Express 15(6), 3140–3148 (2007).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97, 1166–1185 (2009).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref]
[PubMed]
G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
L. Zhang, Y. Li, J.-Y. Yang, M. Song, R. G. Beausoleil, and A. E. Willner, “Silicon-based microring resonator modulators for intensity modulation,” IEEE Sel. Top. Quantum Electron. 16(1), 149–158 (2010).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref]
[PubMed]
J. Van Campenhout, W. M. J. Green, S. Assefa, and Y. A. Vlasov, “Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks,” Opt. Express 17(26), 24020–24029 (2009).
[Crossref]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
L. Zhang, Y. Li, J.-Y. Yang, M. Song, R. G. Beausoleil, and A. E. Willner, “Silicon-based microring resonator modulators for intensity modulation,” IEEE Sel. Top. Quantum Electron. 16(1), 149–158 (2010).
[Crossref]
M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005).
[Crossref]
L. Zhang, Y. Li, J.-Y. Yang, M. Song, R. G. Beausoleil, and A. E. Willner, “Silicon-based microring resonator modulators for intensity modulation,” IEEE Sel. Top. Quantum Electron. 16(1), 149–158 (2010).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
L. Zhang, Y. Li, J.-Y. Yang, M. Song, R. G. Beausoleil, and A. E. Willner, “Silicon-based microring resonator modulators for intensity modulation,” IEEE Sel. Top. Quantum Electron. 16(1), 149–158 (2010).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultra-low-energy all-CMOS modulator integrated with driver,” Opt. Express 18(3), 3059–3070 (2010).
[Crossref]
[PubMed]
A. V. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97, 1337–1361 (2009).
[Crossref]
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009).
[Crossref]
J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005).
[Crossref]
L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high-speed applications,” Electron. Lett. 43(22), 1196–1197 (2007).
[Crossref]
I. A. Young, E. Mohammed, J. T. S. Liao, A. M. Kern, S. Palermo, B. A. Block, M. R. Reshotko, and P. L. D. Chang, “Optical I/O technology for tera-scale computing,” IEEE J. Solid-state Circuits 45(1), 235–248 (2010).
[Crossref]
C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. W. Holzwarth, M. A. Popović, H. Li, H. I. Smith, J. L. Hoyt, F. X. Kärtner, R. J. Ram, V. Stojanović, and K. Asanović, “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” IEEE Micro 29(4), 8–21 (2009).
[Crossref]
G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, “High-speed germanium-on-SOI lateral PIN photodiodes,” IEEE Photon. Technol. Lett. 16(11), 2547–2549 (2004).
[Crossref]
M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005).
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L. Zhang, Y. Li, J.-Y. Yang, M. Song, R. G. Beausoleil, and A. E. Willner, “Silicon-based microring resonator modulators for intensity modulation,” IEEE Sel. Top. Quantum Electron. 16(1), 149–158 (2010).
[Crossref]
M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005).
[Crossref]
H. L. R. Lira, S. Manipatruni, and M. Lipson, “Broadband hitless silicon electro-optic switch for on-chip optical networks,” Opt. Express 17(25), 22271–22280 (2009).
[Crossref]
J. Van Campenhout, W. M. J. Green, S. Assefa, and Y. A. Vlasov, “Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks,” Opt. Express 17(26), 24020–24029 (2009).
[Crossref]
D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
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S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref]
[PubMed]
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