Abstract

We have realized the first demonstration of a table-top aerial imaging microscope capable of characterizing pattern and defect printability in extreme ultraviolet lithography masks. The microscope combines the output of a 13.2 nm wavelength, table-top, plasma-based, EUV laser with zone plate optics to mimic the imaging conditions of an EUV lithographic stepper. We have characterized the illumination of the system and performed line-edge roughness measurements on an EUVL mask. The results open a path for the development of a compact aerial imaging microscope for high-volume manufacturing.

© 2010 OSA

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  1. S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
    [CrossRef]
  2. K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
    [CrossRef]
  3. A. Barty, J. S. Taylor, R. Hudima, E. Spiller, D. W. Sweeney, G. Shelden, and J.-P. Urbach, “Aerial Image Microscopes for the inspection of defects in EUV masks,” in 22nd Annual BACUS Symposium on Photomask Techology, Proceedings of SPIE, 2002), 0277–0786X/0202.
  4. K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
    [CrossRef]
  5. M. Osugi, K. Tanaka, N. Sakaya, K. Hamamoto, T. Watanabe, and H. Kinoshita, “Resolution Enhancement of Extreme Ultraviolet Microscope Using an Extreme Ultraviolet Beam Splitter,” Jpn. J. Appl. Phys. 47(6), 4872–4877 (2008).
    [CrossRef]
  6. G. Vaschenko, C. Brewer, F. Brizuela, Y. Wang, M. A. Larotonda, B. M. Luther, M. C. Marconi, J. J. Rocca, C. S. Menoni, E. H. Anderson, W. Chao, B. D. Harteneck, J. A. Liddle, Y. Liu, and D. T. Attwood, “Sub-38 nm resolution tabletop microscopy with 13 nm wavelength laser light,” Opt. Lett. 31(9), 1214–1216 (2006).
    [CrossRef] [PubMed]
  7. F. Brizuela, Y. Wang, C. A. Brewer, F. Pedaci, W. Chao, E. H. Anderson, Y. Liu, K. A. Goldberg, P. P. Naulleau, P. Wachulak, M. C. Marconi, D. T. Attwood, J. J. Rocca, and C. S. Menoni, “Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination,” Opt. Lett. 34(3), 271–273 (2009).
    [CrossRef] [PubMed]
  8. J. J. Rocca, Y. Wang, M. A. Larotonda, B. M. Luther, M. Berrill, and D. Alessi, “Saturated 13.2 nm high-repetition-rate laser in nickellike cadmium,” Opt. Lett. 30(19), 2581–2583 (2005).
    [CrossRef] [PubMed]
  9. Y. Wang, M. Larotonda, B. Luther, D. Alessi, M. Berrill, V. Shlyaptsev, and J. Rocca, “Demonstration of high-repetition-rate tabletop soft-x-ray lasers with saturated output at wavelengths down to 13.9 nm and gain down to 10.9 nm,” Phys. Rev. A 72(5), 053807 (2005).
    [CrossRef]
  10. D. H. Martz, D. Alessi, B. M. Luther, Y. Wang, D. Kemp, M. Berrill, and J. J. Rocca, “High-energy 13.9 nm table-top soft-x-ray laser at 2.5 Hz repetition rate excited by a slab-pumped Ti:sapphire laser,” Opt. Lett. 35(10), 1632–1634 (2010).
    [CrossRef] [PubMed]
  11. E. H. Anderson, “Specialized Electron Beam Nanolithography for EUV and X-Ray Diffractive Optics,” IEEE J. Quantum Electron. 42(1), 27–35 (2006).
    [CrossRef]
  12. mask provided by GLOBALFOUNDRIES.
  13. P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
    [CrossRef]
  14. J. M. Heck, D. T. Attwood, W. Meyer-Ilse, and E. Anderson, “Resolution determination in X-ray microscopy: an analysis of the effects of partial coherence and illumination spectrum,” J. X Ray Sci. Technol. 8, 95–104 (1998).
  15. K. A. Goldberg, P. P. Naulleau, A. Barty, S. B. Rekawa, C. D. Kemp, R. F. Gunion, F. Salmassi, E. M. Gullikson, E. H. Anderson, and H.-S. Han, “Performance of actinic EUVL mask imaging using a zoneplate microscope,” Proc. SPIE 6730, 67305E-1-12 (2007).
  16. SPLAT, http://cuervo2.eecs.berkeley.edu/ .
  17. K. A. Goldberg, I. Mochi, P. P. Naulleau, H.-S. Han, and S. Huh, “Benchmarking EUV mask inspection beyond 0.25 NA,” Proc. SPIE 7122, 71222E-1 (2008).

2010 (1)

2009 (2)

F. Brizuela, Y. Wang, C. A. Brewer, F. Pedaci, W. Chao, E. H. Anderson, Y. Liu, K. A. Goldberg, P. P. Naulleau, P. Wachulak, M. C. Marconi, D. T. Attwood, J. J. Rocca, and C. S. Menoni, “Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination,” Opt. Lett. 34(3), 271–273 (2009).
[CrossRef] [PubMed]

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

2008 (2)

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

M. Osugi, K. Tanaka, N. Sakaya, K. Hamamoto, T. Watanabe, and H. Kinoshita, “Resolution Enhancement of Extreme Ultraviolet Microscope Using an Extreme Ultraviolet Beam Splitter,” Jpn. J. Appl. Phys. 47(6), 4872–4877 (2008).
[CrossRef]

2007 (1)

S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
[CrossRef]

2006 (3)

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

G. Vaschenko, C. Brewer, F. Brizuela, Y. Wang, M. A. Larotonda, B. M. Luther, M. C. Marconi, J. J. Rocca, C. S. Menoni, E. H. Anderson, W. Chao, B. D. Harteneck, J. A. Liddle, Y. Liu, and D. T. Attwood, “Sub-38 nm resolution tabletop microscopy with 13 nm wavelength laser light,” Opt. Lett. 31(9), 1214–1216 (2006).
[CrossRef] [PubMed]

E. H. Anderson, “Specialized Electron Beam Nanolithography for EUV and X-Ray Diffractive Optics,” IEEE J. Quantum Electron. 42(1), 27–35 (2006).
[CrossRef]

2005 (2)

J. J. Rocca, Y. Wang, M. A. Larotonda, B. M. Luther, M. Berrill, and D. Alessi, “Saturated 13.2 nm high-repetition-rate laser in nickellike cadmium,” Opt. Lett. 30(19), 2581–2583 (2005).
[CrossRef] [PubMed]

Y. Wang, M. Larotonda, B. Luther, D. Alessi, M. Berrill, V. Shlyaptsev, and J. Rocca, “Demonstration of high-repetition-rate tabletop soft-x-ray lasers with saturated output at wavelengths down to 13.9 nm and gain down to 10.9 nm,” Phys. Rev. A 72(5), 053807 (2005).
[CrossRef]

1998 (1)

J. M. Heck, D. T. Attwood, W. Meyer-Ilse, and E. Anderson, “Resolution determination in X-ray microscopy: an analysis of the effects of partial coherence and illumination spectrum,” J. X Ray Sci. Technol. 8, 95–104 (1998).

Alessi, D.

Anderson, C. N.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

Anderson, E.

J. M. Heck, D. T. Attwood, W. Meyer-Ilse, and E. Anderson, “Resolution determination in X-ray microscopy: an analysis of the effects of partial coherence and illumination spectrum,” J. X Ray Sci. Technol. 8, 95–104 (1998).

Anderson, E. H.

Asbach, C.

S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
[CrossRef]

Attwood, D. T.

Barty, A.

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

Berrill, M.

Brewer, C.

Brewer, C. A.

Brizuela, F.

Chao, W.

Chiu, J.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

Denham, P.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

Dutcher, D. D.

S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
[CrossRef]

Fissan, H.

S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
[CrossRef]

George, S.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

Goldberg, K. A.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

F. Brizuela, Y. Wang, C. A. Brewer, F. Pedaci, W. Chao, E. H. Anderson, Y. Liu, K. A. Goldberg, P. P. Naulleau, P. Wachulak, M. C. Marconi, D. T. Attwood, J. J. Rocca, and C. S. Menoni, “Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination,” Opt. Lett. 34(3), 271–273 (2009).
[CrossRef] [PubMed]

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

Goldstein, M.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

Gunion, R. F.

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

Hamamoto, K.

M. Osugi, K. Tanaka, N. Sakaya, K. Hamamoto, T. Watanabe, and H. Kinoshita, “Resolution Enhancement of Extreme Ultraviolet Microscope Using an Extreme Ultraviolet Beam Splitter,” Jpn. J. Appl. Phys. 47(6), 4872–4877 (2008).
[CrossRef]

Han, H.-S.

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

Harteneck, B. D.

Heck, J. M.

J. M. Heck, D. T. Attwood, W. Meyer-Ilse, and E. Anderson, “Resolution determination in X-ray microscopy: an analysis of the effects of partial coherence and illumination spectrum,” J. X Ray Sci. Technol. 8, 95–104 (1998).

Hoef, B.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

Hudyma, R.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

Huh, S.

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

Jones, G.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

Kearney, P. A.

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

Kemp, C. D.

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

Kemp, D.

Kim, J. H.

S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
[CrossRef]

Kinoshita, H.

M. Osugi, K. Tanaka, N. Sakaya, K. Hamamoto, T. Watanabe, and H. Kinoshita, “Resolution Enhancement of Extreme Ultraviolet Microscope Using an Extreme Ultraviolet Beam Splitter,” Jpn. J. Appl. Phys. 47(6), 4872–4877 (2008).
[CrossRef]

Larotonda, M.

Y. Wang, M. Larotonda, B. Luther, D. Alessi, M. Berrill, V. Shlyaptsev, and J. Rocca, “Demonstration of high-repetition-rate tabletop soft-x-ray lasers with saturated output at wavelengths down to 13.9 nm and gain down to 10.9 nm,” Phys. Rev. A 72(5), 053807 (2005).
[CrossRef]

Larotonda, M. A.

Liddle, J. A.

Liu, Y.

Luther, B.

Y. Wang, M. Larotonda, B. Luther, D. Alessi, M. Berrill, V. Shlyaptsev, and J. Rocca, “Demonstration of high-repetition-rate tabletop soft-x-ray lasers with saturated output at wavelengths down to 13.9 nm and gain down to 10.9 nm,” Phys. Rev. A 72(5), 053807 (2005).
[CrossRef]

Luther, B. M.

Marconi, M. C.

Martz, D. H.

Menoni, C. S.

Meyer-Ilse, W.

J. M. Heck, D. T. Attwood, W. Meyer-Ilse, and E. Anderson, “Resolution determination in X-ray microscopy: an analysis of the effects of partial coherence and illumination spectrum,” J. X Ray Sci. Technol. 8, 95–104 (1998).

Mochi, I.

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

Naulleau, P. P.

F. Brizuela, Y. Wang, C. A. Brewer, F. Pedaci, W. Chao, E. H. Anderson, Y. Liu, K. A. Goldberg, P. P. Naulleau, P. Wachulak, M. C. Marconi, D. T. Attwood, J. J. Rocca, and C. S. Menoni, “Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination,” Opt. Lett. 34(3), 271–273 (2009).
[CrossRef] [PubMed]

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, and G. Jones, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng. 86(4-6), 448–455 (2009).
[CrossRef]

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

Osugi, M.

M. Osugi, K. Tanaka, N. Sakaya, K. Hamamoto, T. Watanabe, and H. Kinoshita, “Resolution Enhancement of Extreme Ultraviolet Microscope Using an Extreme Ultraviolet Beam Splitter,” Jpn. J. Appl. Phys. 47(6), 4872–4877 (2008).
[CrossRef]

Pedaci, F.

Pui, D. Y. H.

S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
[CrossRef]

Rekawa, S. B.

K. A. Goldberg, P. P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B 26(6), 2220–2224 (2008).
[CrossRef]

Rocca, J.

Y. Wang, M. Larotonda, B. Luther, D. Alessi, M. Berrill, V. Shlyaptsev, and J. Rocca, “Demonstration of high-repetition-rate tabletop soft-x-ray lasers with saturated output at wavelengths down to 13.9 nm and gain down to 10.9 nm,” Phys. Rev. A 72(5), 053807 (2005).
[CrossRef]

Rocca, J. J.

Sakaya, N.

M. Osugi, K. Tanaka, N. Sakaya, K. Hamamoto, T. Watanabe, and H. Kinoshita, “Resolution Enhancement of Extreme Ultraviolet Microscope Using an Extreme Ultraviolet Beam Splitter,” Jpn. J. Appl. Phys. 47(6), 4872–4877 (2008).
[CrossRef]

Shlyaptsev, V.

Y. Wang, M. Larotonda, B. Luther, D. Alessi, M. Berrill, V. Shlyaptsev, and J. Rocca, “Demonstration of high-repetition-rate tabletop soft-x-ray lasers with saturated output at wavelengths down to 13.9 nm and gain down to 10.9 nm,” Phys. Rev. A 72(5), 053807 (2005).
[CrossRef]

Tanaka, K.

M. Osugi, K. Tanaka, N. Sakaya, K. Hamamoto, T. Watanabe, and H. Kinoshita, “Resolution Enhancement of Extreme Ultraviolet Microscope Using an Extreme Ultraviolet Beam Splitter,” Jpn. J. Appl. Phys. 47(6), 4872–4877 (2008).
[CrossRef]

Taylor, J. S.

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

Terasawa, T.

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

Tezuka, Y.

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

Vaschenko, G.

Wachulak, P.

Wang, Y.

Watanabe, T.

M. Osugi, K. Tanaka, N. Sakaya, K. Hamamoto, T. Watanabe, and H. Kinoshita, “Resolution Enhancement of Extreme Ultraviolet Microscope Using an Extreme Ultraviolet Beam Splitter,” Jpn. J. Appl. Phys. 47(6), 4872–4877 (2008).
[CrossRef]

Wood, O. R. I.

K. A. Goldberg, A. Barty, Y. Liu, P. A. Kearney, Y. Tezuka, T. Terasawa, J. S. Taylor, H.-S. Han, and O. R. I. Wood, “Actinic inspection of extreme ultraviolet programmed multilayer defects and cross-comparison measurements,” J. Vac. Sci. Technol. B 24(6), 2824–2828 (2006).
[CrossRef]

Yan, P.-Y.

S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
[CrossRef]

Yook, S.

S. Yook, H. Fissan, C. Asbach, J. H. Kim, D. D. Dutcher, P.-Y. Yan, and D. Y. H. Pui, “Experimental Investigations on Particle Contamination fo Masks Without Protective Pellicles During Vibration or Shipping of Mask Carriers,” IEEE Trans. Semicond. Manuf. 20(4), 578–584 (2007).
[CrossRef]

IEEE J. Quantum Electron. (1)

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mask provided by GLOBALFOUNDRIES.

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SPLAT, http://cuervo2.eecs.berkeley.edu/ .

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Figures (5)

Fig. 1
Fig. 1

Diagram of the microscope setup. The light from the laser is guided by a Mo/Si turning mirror onto a condenser zone plate which focuses the light onto the EUVL mask. The light reflected off the mask is collected by an off-axis zone plate which projects a magnified image onto an EUV-sensitive CCD.

Fig. 2
Fig. 2

EUV image of a 180 nm half-pitch absorption elbow pattern in a bright field obtained with an exposure of 90 seconds. The color bar indicates the number of counts per pixel.

Fig. 3
Fig. 3

Normalized modulation intensity of a bright-field EUV image of a 200 nm half-pitch grating at different positions from the focal plane. The intensity of the secondary maxima reveals a partial spatial coherence of approximately 0.25 as simulated using SPLAT.

Fig. 4
Fig. 4

EUV image of 175 nm half-pitch gratings in a dark field.

Fig. 5
Fig. 5

LER analysis of a) 175 nm and d) 225 nm half-pitch gratings. Normalized intensity versus position plots are given in b) and c). e) and f) provide a graphical representation of the variation of the edge position along the features. The analysis shows that the 3σ variation is below 10% of the CD value.

Tables (1)

Tables Icon

Table 1 NILS and LER measurements of two grating structures with indicated CD values

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