Abstract

A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.

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  1. D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
    [CrossRef]
  2. S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
    [CrossRef]
  3. K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
    [CrossRef]
  4. S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
    [CrossRef]
  5. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
    [CrossRef] [PubMed]
  6. L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
    [CrossRef]
  7. G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
    [CrossRef]
  8. D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
    [CrossRef]
  9. A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).
  10. J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
    [CrossRef] [PubMed]
  11. J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).
  12. “M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
    [CrossRef]
  13. J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
    [CrossRef] [PubMed]
  14. M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
    [CrossRef] [PubMed]
  15. S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
    [CrossRef]
  16. T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
    [CrossRef]

2009 (1)

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

2008 (1)

2007 (2)

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[CrossRef] [PubMed]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[CrossRef] [PubMed]

2006 (1)

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

2004 (1)

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

2003 (2)

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[CrossRef]

2002 (1)

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[CrossRef]

2000 (2)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

1997 (1)

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[CrossRef]

1994 (2)

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[CrossRef]

1993 (1)

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[CrossRef]

1992 (1)

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[CrossRef]

Aniel, F.

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Aziz, M. J.

Bao, J.

Bensahel, D.

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[CrossRef] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Boucard, P.

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

Boucaud, P.

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[CrossRef] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Brunhes, T.

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Camera, A.

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[CrossRef]

Campidelli, Y.

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[CrossRef] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Capasso, F.

Cazzanelli, M.

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

Charnvanichborikarn, S.

Checoury, X.

Chinzei, T.

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[CrossRef]

Coffa, S.

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[CrossRef]

Dal Negro, L.

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

David, S.

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[CrossRef] [PubMed]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

Dultsev, F. N.

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

El Kurdi, M.

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[CrossRef] [PubMed]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

Faini, G.

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Franzò, G.

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[CrossRef]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[CrossRef]

Fukatsu, S.

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[CrossRef]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[CrossRef]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[CrossRef]

Hernandez, C.

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Iacona, F.

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[CrossRef]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

Ichikawa, M.

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

Ikegami, Y.

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[CrossRef] [PubMed]

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

Kammerer, C.

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

Kato, Y.

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

Kawaguchi, K.

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[CrossRef]

Kermarrec, O.

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[CrossRef] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Kim, T.

Koh, S.

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[CrossRef]

Komiyama, S.

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[CrossRef]

Konishi, K.

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[CrossRef]

Le Thanh, V.

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

Li, X.

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

Lourtioz, J.-M.

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Mazzoleni, C.

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Morooka, M.

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[CrossRef]

Nakagawa, K.

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[CrossRef]

Nakamura, Y.

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

Nakata, Y.

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

Nayak, D. K.

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[CrossRef]

Negro, L. D.

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[CrossRef]

Nemoto, K.

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[CrossRef] [PubMed]

Ngo, T. P.

Nishida, A.

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[CrossRef]

Ohmori, Y.

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

Ohnishi, T.

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

Oku, H.

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

Okumura, K.

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

Ossicini, S.

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

Pacifici, D.

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[CrossRef]

Pavesi, L.

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Polman, A.

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[CrossRef]

Priolo, F.

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[CrossRef]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[CrossRef]

Sagnes, I.

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Sauvage, S

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

Sauvage, S.

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

Shiraki, Y.

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[CrossRef] [PubMed]

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[CrossRef]

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[CrossRef]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[CrossRef]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[CrossRef]

Shklyaev, A. A.

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

Sunamura, H.

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

Sunamuru, H.

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[CrossRef]

Tabbal, M.

Usami, N.

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[CrossRef]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[CrossRef]

Williams, J. S.

Xia, J. S.

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[CrossRef] [PubMed]

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

Zerounian, N.

Appl. Phys. Lett. (7)

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[CrossRef]

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[CrossRef]

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[CrossRef]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[CrossRef]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[CrossRef]

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[CrossRef] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[CrossRef]

J. Appl. Phys. (1)

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[CrossRef]

J. Cryst. Growth (1)

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[CrossRef]

Jpn. J. Appl. Phys. (1)

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[CrossRef]

Nature (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[CrossRef] [PubMed]

Opt. Express (2)

Phys.Rev.B (1)

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[CrossRef]

Other (2)

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

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Figures (6)

Fig. 1
Fig. 1

Cross-section view of the structure of the current-injected light-emitting device.

Fig. 2
Fig. 2

Scanning electron microscope image of the fabricated 2.8 µm microdisk device.

Fig. 3
Fig. 3

I-V characteristic of the p-i-n junction.

Fig. 4
Fig. 4

(a). Electroluminescence spectrum of the device under current of 0.1 mA recorded at room-temperature. (b). Calculated wavelengths of TM-polarized-like WGMs supported by the microdisk. The insets show the mode profiles of the WGMs locating at 1.191, 1.241 and 1.296 µm calculated by three-dimensional FDTD simulations.

Fig. 5
Fig. 5

Electroluminescence spectra at different currents. The inset shows the red shift of the resonant peak against injected current.

Fig. 6
Fig. 6

Dependence of integrated electroluminescence intensity on the injected current.

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