Abstract

We demonstrated the 1.33 µm laser performance with Nd:Gd3AlxGa5-xO12 (x = 0.94) (Nd:GAGG) laser crystals for the first time. Continuous-wave (cw) output power of 2.45 W was obtained with the optical-optical conversion efficiency of 21.8% and slope efficiency of 23.3%. In the passive Q-switching regime, the highest output power, the shortest pulse width, largest pulse energy and highest peak power were achieved to be 326 mW 18.2 ns, 36.3 µJ and 2.0 kW, respectively, with V3+:YAG crystal as the saturable absorber.

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  19. A. Agnesi, F. Pirzio, G. Reali, A. Arcangeli, M. Tonelli, Z. Jia, and X. Tao, “Multi-wavelength Nd:GAGG picosecond laser,” Opt. Mater. in press.
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    [CrossRef]
  22. H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
    [CrossRef] [PubMed]
  23. A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
    [CrossRef]
  24. J. Šulc, H. Jelínkavá, K. Nejezchleb, and V. Skoda, “Nd:YAG/V:YAG monolithic microchip laser operating at 1.3 μm,” Opt. Mater. 30(1), 50–53 (2007).
    [CrossRef]
  25. J. J. Zayhowski and P. L. Kelley, “Optimization of Q-switched lasers,” IEEE J. Quantum Electron. 27(9), 2220–2225 (1991).
    [CrossRef]

2009 (3)

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
[CrossRef] [PubMed]

2008 (3)

2007 (2)

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

J. Šulc, H. Jelínkavá, K. Nejezchleb, and V. Skoda, “Nd:YAG/V:YAG monolithic microchip laser operating at 1.3 μm,” Opt. Mater. 30(1), 50–53 (2007).
[CrossRef]

2006 (1)

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

2005 (2)

2003 (1)

A. V. Podlipensky, K. V. Yumashev, N. V. Kuleshov, H. M. Kretschmann, and G. Huber, “Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber,” Appl. Phys. B 76(3), 245–247 (2003).
[CrossRef]

2001 (2)

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabezynski, K. Kopczynski, and Z. Mierczyk, “Diode-pumped Nd:YVO4 laser at 1.34μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[CrossRef]

1998 (2)

A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair, “V:YAG– a new passive Q-switch for diode-pumped solid-state lasers,” Appl. Phys. B 67(5), 555–558 (1998).
[CrossRef]

B. Labranche, Q. Wu, and P. Galarneau, Proc. SPIE 2041, 326–331 (1998).
[CrossRef]

1997 (1)

1992 (1)

N. Mermilliod, R. Romero, I. Chartier, C. Garapon, and R. Moncorgé, “Performance of various diode-pumped Nd:laser materials: influence of inhomogeneous broadening,” IEEE J. Quantum Electron. 28(4), 1179–1187 (1992).
[CrossRef]

1991 (1)

J. J. Zayhowski and P. L. Kelley, “Optimization of Q-switched lasers,” IEEE J. Quantum Electron. 27(9), 2220–2225 (1991).
[CrossRef]

1989 (1)

H. Kimura, T. Numazawa, M. Sato, and H. Maeda, “Crystal structure and thermal conductivity of Gd3(Ga1-xAlx)5O12 Garnets,” Jpn. J. Appl. Phys. 28(Part 1, No. 9), 1644–1647 (1989).
[CrossRef]

1988 (2)

Y. Kuwano, S. Saito, and U. Hase, “Crystal growth and optical properties of Nd:GAGG,” J. Cryst. Growth 92(1-2), 17–22 (1988).
[CrossRef]

K. Yoshida, H. Yoshida, and Y. Kato, “Characterization of high average power Nd:GGG slab lasers,” IEEE J. Quantum Electron. 24(6), 1188–1192 (1988).
[CrossRef]

1987 (1)

H. Hayakawa, K. Maeda, T. Ishikawa, T. Yokoyama, and Y. Fujii, “ High Average Power Nd:Gd 3 Ga 5 O 12 Slab Laser, ” Jpn. J. Appl. Phys. 26(Part 2, No. 10), 1623–1625 (1987).
[CrossRef]

Agnesi, A.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabezynski, K. Kopczynski, and Z. Mierczyk, “Diode-pumped Nd:YVO4 laser at 1.34μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[CrossRef]

A. Agnesi, F. Pirzio, G. Reali, A. Arcangeli, M. Tonelli, Z. Jia, and X. Tao, “Multi-wavelength Nd:GAGG picosecond laser,” Opt. Mater. in press.

Arcangeli, A.

A. Agnesi, F. Pirzio, G. Reali, A. Arcangeli, M. Tonelli, Z. Jia, and X. Tao, “Multi-wavelength Nd:GAGG picosecond laser,” Opt. Mater. in press.

Braun, B.

Chang, Y. T.

Chartier, I.

N. Mermilliod, R. Romero, I. Chartier, C. Garapon, and R. Moncorgé, “Performance of various diode-pumped Nd:laser materials: influence of inhomogeneous broadening,” IEEE J. Quantum Electron. 28(4), 1179–1187 (1992).
[CrossRef]

Chen, Y. F.

Cheng, X.

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

W. Ge, H. Zhang, J. Wang, X. Cheng, M. Jiang, C. Du, and S. Yuan, “Pulsed laser output of LD-end-pumped 1.34μm Nd:GdVO4 laser with Co: LaMgAl11O19 crystal as saturable absorber,” Opt. Express 13(10), 3883–3889 (2005).
[CrossRef] [PubMed]

Conroy, R. S.

A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair, “V:YAG– a new passive Q-switch for diode-pumped solid-state lasers,” Appl. Phys. B 67(5), 555–558 (1998).
[CrossRef]

Dananliov, M. B.

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

Demidovich, A. A.

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

Denisov, I. A.

A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair, “V:YAG– a new passive Q-switch for diode-pumped solid-state lasers,” Appl. Phys. B 67(5), 555–558 (1998).
[CrossRef]

Dong, C.

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

Dong, C. M.

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

L. J. Qin, D. Y. Tang, G. Q. Xie, H. Luo, C. M. Dong, Z. T. Jia, H. H. Yu, and X. T. Tao, “Diode-end-pumped passively mode-locked Nd:GGG laser with a semicondutor saturable mirror,” Opt. Commun. 281(18), 4762–4764 (2008).
[CrossRef]

Dong, C.-M.

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

Dong, X.

Dong, X.-L.

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

Du, C.

Eichler, H. J.

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

Fluck, R.

Fujii, Y.

H. Hayakawa, K. Maeda, T. Ishikawa, T. Yokoyama, and Y. Fujii, “ High Average Power Nd:Gd 3 Ga 5 O 12 Slab Laser, ” Jpn. J. Appl. Phys. 26(Part 2, No. 10), 1623–1625 (1987).
[CrossRef]

Galarneau, P.

B. Labranche, Q. Wu, and P. Galarneau, Proc. SPIE 2041, 326–331 (1998).
[CrossRef]

Garapon, C.

N. Mermilliod, R. Romero, I. Chartier, C. Garapon, and R. Moncorgé, “Performance of various diode-pumped Nd:laser materials: influence of inhomogeneous broadening,” IEEE J. Quantum Electron. 28(4), 1179–1187 (1992).
[CrossRef]

Ge, W.

Gini, E.

Grabtchikov, A. S.

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

Guandalini, A.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabezynski, K. Kopczynski, and Z. Mierczyk, “Diode-pumped Nd:YVO4 laser at 1.34μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[CrossRef]

Hase, U.

Y. Kuwano, S. Saito, and U. Hase, “Crystal growth and optical properties of Nd:GAGG,” J. Cryst. Growth 92(1-2), 17–22 (1988).
[CrossRef]

Hayakawa, H.

H. Hayakawa, K. Maeda, T. Ishikawa, T. Yokoyama, and Y. Fujii, “ High Average Power Nd:Gd 3 Ga 5 O 12 Slab Laser, ” Jpn. J. Appl. Phys. 26(Part 2, No. 10), 1623–1625 (1987).
[CrossRef]

He, J.

He, J. L.

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

He, J.-L.

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
[CrossRef] [PubMed]

Huang, H. T.

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

Huang, H.-T.

H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
[CrossRef] [PubMed]

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

Huang, Y. P.

Huber, G.

A. V. Podlipensky, K. V. Yumashev, N. V. Kuleshov, H. M. Kretschmann, and G. Huber, “Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber,” Appl. Phys. B 76(3), 245–247 (2003).
[CrossRef]

Ishikawa, T.

H. Hayakawa, K. Maeda, T. Ishikawa, T. Yokoyama, and Y. Fujii, “ High Average Power Nd:Gd 3 Ga 5 O 12 Slab Laser, ” Jpn. J. Appl. Phys. 26(Part 2, No. 10), 1623–1625 (1987).
[CrossRef]

Jabezynski, J. K.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabezynski, K. Kopczynski, and Z. Mierczyk, “Diode-pumped Nd:YVO4 laser at 1.34μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[CrossRef]

Jelínkavá, H.

J. Šulc, H. Jelínkavá, K. Nejezchleb, and V. Skoda, “Nd:YAG/V:YAG monolithic microchip laser operating at 1.3 μm,” Opt. Mater. 30(1), 50–53 (2007).
[CrossRef]

Jia, Z.

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

A. Agnesi, F. Pirzio, G. Reali, A. Arcangeli, M. Tonelli, Z. Jia, and X. Tao, “Multi-wavelength Nd:GAGG picosecond laser,” Opt. Mater. in press.

Jia, Z. T.

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

L. J. Qin, D. Y. Tang, G. Q. Xie, H. Luo, C. M. Dong, Z. T. Jia, H. H. Yu, and X. T. Tao, “Diode-end-pumped passively mode-locked Nd:GGG laser with a semicondutor saturable mirror,” Opt. Commun. 281(18), 4762–4764 (2008).
[CrossRef]

Jiang, M.

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

W. Ge, H. Zhang, J. Wang, X. Cheng, M. Jiang, C. Du, and S. Yuan, “Pulsed laser output of LD-end-pumped 1.34μm Nd:GdVO4 laser with Co: LaMgAl11O19 crystal as saturable absorber,” Opt. Express 13(10), 3883–3889 (2005).
[CrossRef] [PubMed]

Jiang, M. H.

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

Ji-Ping, N.

S. Lian-Ju and N. Ji-Ping, “1.34 μm Nd:YVO4 high efficiency laser end-pumped by diode-laser of flat-concave cacity type,” Chin. Phys. 14(7), 1387–1391 (2005).
[CrossRef]

Kato, Y.

K. Yoshida, H. Yoshida, and Y. Kato, “Characterization of high average power Nd:GGG slab lasers,” IEEE J. Quantum Electron. 24(6), 1188–1192 (1988).
[CrossRef]

Keller, U.

Kelley, P. L.

J. J. Zayhowski and P. L. Kelley, “Optimization of Q-switched lasers,” IEEE J. Quantum Electron. 27(9), 2220–2225 (1991).
[CrossRef]

Kimura, H.

H. Kimura, T. Numazawa, M. Sato, and H. Maeda, “Crystal structure and thermal conductivity of Gd3(Ga1-xAlx)5O12 Garnets,” Jpn. J. Appl. Phys. 28(Part 1, No. 9), 1644–1647 (1989).
[CrossRef]

Kopczynski, K.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabezynski, K. Kopczynski, and Z. Mierczyk, “Diode-pumped Nd:YVO4 laser at 1.34μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[CrossRef]

Kretschmann, H. M.

A. V. Podlipensky, K. V. Yumashev, N. V. Kuleshov, H. M. Kretschmann, and G. Huber, “Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber,” Appl. Phys. B 76(3), 245–247 (2003).
[CrossRef]

Kuleshov, N. V.

A. V. Podlipensky, K. V. Yumashev, N. V. Kuleshov, H. M. Kretschmann, and G. Huber, “Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber,” Appl. Phys. B 76(3), 245–247 (2003).
[CrossRef]

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

Kuwano, Y.

Y. Kuwano, S. Saito, and U. Hase, “Crystal growth and optical properties of Nd:GAGG,” J. Cryst. Growth 92(1-2), 17–22 (1988).
[CrossRef]

Kuzmin, A. N.

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

Labranche, B.

B. Labranche, Q. Wu, and P. Galarneau, Proc. SPIE 2041, 326–331 (1998).
[CrossRef]

Lian-Ju, S.

S. Lian-Ju and N. Ji-Ping, “1.34 μm Nd:YVO4 high efficiency laser end-pumped by diode-laser of flat-concave cacity type,” Chin. Phys. 14(7), 1387–1391 (2005).
[CrossRef]

Lisinetskii, V. A.

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

Liu, F.

Liu, Y.

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

Luo, H.

L. J. Qin, D. Y. Tang, G. Q. Xie, H. Luo, C. M. Dong, Z. T. Jia, H. H. Yu, and X. T. Tao, “Diode-end-pumped passively mode-locked Nd:GGG laser with a semicondutor saturable mirror,” Opt. Commun. 281(18), 4762–4764 (2008).
[CrossRef]

Maeda, H.

H. Kimura, T. Numazawa, M. Sato, and H. Maeda, “Crystal structure and thermal conductivity of Gd3(Ga1-xAlx)5O12 Garnets,” Jpn. J. Appl. Phys. 28(Part 1, No. 9), 1644–1647 (1989).
[CrossRef]

Maeda, K.

H. Hayakawa, K. Maeda, T. Ishikawa, T. Yokoyama, and Y. Fujii, “ High Average Power Nd:Gd 3 Ga 5 O 12 Slab Laser, ” Jpn. J. Appl. Phys. 26(Part 2, No. 10), 1623–1625 (1987).
[CrossRef]

Malyarevich, A. M.

A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair, “V:YAG– a new passive Q-switch for diode-pumped solid-state lasers,” Appl. Phys. B 67(5), 555–558 (1998).
[CrossRef]

Melchior, H.

Mermilliod, N.

N. Mermilliod, R. Romero, I. Chartier, C. Garapon, and R. Moncorgé, “Performance of various diode-pumped Nd:laser materials: influence of inhomogeneous broadening,” IEEE J. Quantum Electron. 28(4), 1179–1187 (1992).
[CrossRef]

Mierczyk, Z.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabezynski, K. Kopczynski, and Z. Mierczyk, “Diode-pumped Nd:YVO4 laser at 1.34μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[CrossRef]

Mikhailov, V. P.

A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair, “V:YAG– a new passive Q-switch for diode-pumped solid-state lasers,” Appl. Phys. B 67(5), 555–558 (1998).
[CrossRef]

Moncorgé, R.

N. Mermilliod, R. Romero, I. Chartier, C. Garapon, and R. Moncorgé, “Performance of various diode-pumped Nd:laser materials: influence of inhomogeneous broadening,” IEEE J. Quantum Electron. 28(4), 1179–1187 (1992).
[CrossRef]

Nejezchleb, K.

J. Šulc, H. Jelínkavá, K. Nejezchleb, and V. Skoda, “Nd:YAG/V:YAG monolithic microchip laser operating at 1.3 μm,” Opt. Mater. 30(1), 50–53 (2007).
[CrossRef]

Numazawa, T.

H. Kimura, T. Numazawa, M. Sato, and H. Maeda, “Crystal structure and thermal conductivity of Gd3(Ga1-xAlx)5O12 Garnets,” Jpn. J. Appl. Phys. 28(Part 1, No. 9), 1644–1647 (1989).
[CrossRef]

Orlovich, V. A.

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

Pirzio, F.

A. Agnesi, F. Pirzio, G. Reali, A. Arcangeli, M. Tonelli, Z. Jia, and X. Tao, “Multi-wavelength Nd:GAGG picosecond laser,” Opt. Mater. in press.

Podlipensky, A. V.

A. V. Podlipensky, K. V. Yumashev, N. V. Kuleshov, H. M. Kretschmann, and G. Huber, “Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber,” Appl. Phys. B 76(3), 245–247 (2003).
[CrossRef]

Qin, L. J.

L. J. Qin, D. Y. Tang, G. Q. Xie, H. Luo, C. M. Dong, Z. T. Jia, H. H. Yu, and X. T. Tao, “Diode-end-pumped passively mode-locked Nd:GGG laser with a semicondutor saturable mirror,” Opt. Commun. 281(18), 4762–4764 (2008).
[CrossRef]

Reali, G.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabezynski, K. Kopczynski, and Z. Mierczyk, “Diode-pumped Nd:YVO4 laser at 1.34μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[CrossRef]

A. Agnesi, F. Pirzio, G. Reali, A. Arcangeli, M. Tonelli, Z. Jia, and X. Tao, “Multi-wavelength Nd:GAGG picosecond laser,” Opt. Mater. in press.

Romero, R.

N. Mermilliod, R. Romero, I. Chartier, C. Garapon, and R. Moncorgé, “Performance of various diode-pumped Nd:laser materials: influence of inhomogeneous broadening,” IEEE J. Quantum Electron. 28(4), 1179–1187 (1992).
[CrossRef]

Saito, S.

Y. Kuwano, S. Saito, and U. Hase, “Crystal growth and optical properties of Nd:GAGG,” J. Cryst. Growth 92(1-2), 17–22 (1988).
[CrossRef]

Sato, M.

H. Kimura, T. Numazawa, M. Sato, and H. Maeda, “Crystal structure and thermal conductivity of Gd3(Ga1-xAlx)5O12 Garnets,” Jpn. J. Appl. Phys. 28(Part 1, No. 9), 1644–1647 (1989).
[CrossRef]

Sinclair, B. D.

A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair, “V:YAG– a new passive Q-switch for diode-pumped solid-state lasers,” Appl. Phys. B 67(5), 555–558 (1998).
[CrossRef]

Skoda, V.

J. Šulc, H. Jelínkavá, K. Nejezchleb, and V. Skoda, “Nd:YAG/V:YAG monolithic microchip laser operating at 1.3 μm,” Opt. Mater. 30(1), 50–53 (2007).
[CrossRef]

Su, K. W.

Šulc, J.

J. Šulc, H. Jelínkavá, K. Nejezchleb, and V. Skoda, “Nd:YAG/V:YAG monolithic microchip laser operating at 1.3 μm,” Opt. Mater. 30(1), 50–53 (2007).
[CrossRef]

Tang, D. Y.

L. J. Qin, D. Y. Tang, G. Q. Xie, H. Luo, C. M. Dong, Z. T. Jia, H. H. Yu, and X. T. Tao, “Diode-end-pumped passively mode-locked Nd:GGG laser with a semicondutor saturable mirror,” Opt. Commun. 281(18), 4762–4764 (2008).
[CrossRef]

Tao, X.

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

A. Agnesi, F. Pirzio, G. Reali, A. Arcangeli, M. Tonelli, Z. Jia, and X. Tao, “Multi-wavelength Nd:GAGG picosecond laser,” Opt. Mater. in press.

Tao, X. T.

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

L. J. Qin, D. Y. Tang, G. Q. Xie, H. Luo, C. M. Dong, Z. T. Jia, H. H. Yu, and X. T. Tao, “Diode-end-pumped passively mode-locked Nd:GGG laser with a semicondutor saturable mirror,” Opt. Commun. 281(18), 4762–4764 (2008).
[CrossRef]

Tao, X.-T.

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

Tonelli, M.

A. Agnesi, F. Pirzio, G. Reali, A. Arcangeli, M. Tonelli, Z. Jia, and X. Tao, “Multi-wavelength Nd:GAGG picosecond laser,” Opt. Mater. in press.

Wang, H. T.

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

Wang, J.

Wang, J. Y.

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

Wu, Q.

B. Labranche, Q. Wu, and P. Galarneau, Proc. SPIE 2041, 326–331 (1998).
[CrossRef]

Xia, H.

Xie, G. Q.

L. J. Qin, D. Y. Tang, G. Q. Xie, H. Luo, C. M. Dong, Z. T. Jia, H. H. Yu, and X. T. Tao, “Diode-end-pumped passively mode-locked Nd:GGG laser with a semicondutor saturable mirror,” Opt. Commun. 281(18), 4762–4764 (2008).
[CrossRef]

Xu, F.

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

Xu, J.

Xu, J.-L.

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
[CrossRef] [PubMed]

Yang, J.-F.

H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
[CrossRef] [PubMed]

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

Yang, K.

Yang, X.-Q.

Yokoyama, T.

H. Hayakawa, K. Maeda, T. Ishikawa, T. Yokoyama, and Y. Fujii, “ High Average Power Nd:Gd 3 Ga 5 O 12 Slab Laser, ” Jpn. J. Appl. Phys. 26(Part 2, No. 10), 1623–1625 (1987).
[CrossRef]

Yoshida, H.

K. Yoshida, H. Yoshida, and Y. Kato, “Characterization of high average power Nd:GGG slab lasers,” IEEE J. Quantum Electron. 24(6), 1188–1192 (1988).
[CrossRef]

Yoshida, K.

K. Yoshida, H. Yoshida, and Y. Kato, “Characterization of high average power Nd:GGG slab lasers,” IEEE J. Quantum Electron. 24(6), 1188–1192 (1988).
[CrossRef]

Yu, H. H.

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

L. J. Qin, D. Y. Tang, G. Q. Xie, H. Luo, C. M. Dong, Z. T. Jia, H. H. Yu, and X. T. Tao, “Diode-end-pumped passively mode-locked Nd:GGG laser with a semicondutor saturable mirror,” Opt. Commun. 281(18), 4762–4764 (2008).
[CrossRef]

Yuan, S.

Yumashev, K. V.

A. V. Podlipensky, K. V. Yumashev, N. V. Kuleshov, H. M. Kretschmann, and G. Huber, “Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber,” Appl. Phys. B 76(3), 245–247 (2003).
[CrossRef]

A. S. Grabtchikov, A. N. Kuzmin, V. A. Lisinetskii, V. A. Orlovich, A. A. Demidovich, K. V. Yumashev, N. V. Kuleshov, H. J. Eichler, and M. B. Dananliov, “Passively Q-switched 1.35 μm diode pumped Nd:KGW laser with V:YAG saturable absorber,” Opt. Mater. 16(3), 349–352 (2001).
[CrossRef]

A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair, “V:YAG– a new passive Q-switch for diode-pumped solid-state lasers,” Appl. Phys. B 67(5), 555–558 (1998).
[CrossRef]

Zayhowski, J. J.

J. J. Zayhowski and P. L. Kelley, “Optimization of Q-switched lasers,” IEEE J. Quantum Electron. 27(9), 2220–2225 (1991).
[CrossRef]

Zhang, B.

Zhang, B.-T.

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
[CrossRef] [PubMed]

Zhang, H.

Zhang, H. J.

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

Zhang, J.

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

Zhang, W.

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

Zhang, Y. Z.

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

Zhao, S.

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
[CrossRef] [PubMed]

Zhi, Y. C.

J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
[CrossRef]

Zuo, C. H.

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

Zuo, C.-H.

H.-T. Huang, B.-T. Zhang, J.-L. He, J.-F. Yang, J.-L. Xu, X.-Q. Yang, C.-H. Zuo, and S. Zhao, “Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 μm with V3+:YAG as the saturable absorber,” Opt. Express 17(9), 6946–6951 (2009).
[CrossRef] [PubMed]

C.-H. Zuo, B.-T. Zhang, J.-L. He, X.-L. Dong, J.-F. Yang, H.-T. Huang, J.-L. Xu, S. Zhao, C.-M. Dong, and X.-T. Tao, “CW and passive Q-switching characteristics of a diode-end-pumped Nd:GGG laser at 1331nm,” Opt. Mater. 31(6), 976–979 (2009).
[CrossRef]

Appl. Phys. B (3)

H. T. Huang, J. L. He, C. H. Zuo, H. J. Zhang, J. Y. Wang, Y. Liu, and H. T. Wang, “Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm,” Appl. Phys. B 89(2-3), 319–321 (2007).
[CrossRef]

A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair, “V:YAG– a new passive Q-switch for diode-pumped solid-state lasers,” Appl. Phys. B 67(5), 555–558 (1998).
[CrossRef]

A. V. Podlipensky, K. V. Yumashev, N. V. Kuleshov, H. M. Kretschmann, and G. Huber, “Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber,” Appl. Phys. B 76(3), 245–247 (2003).
[CrossRef]

Chin. Phys. (1)

S. Lian-Ju and N. Ji-Ping, “1.34 μm Nd:YVO4 high efficiency laser end-pumped by diode-laser of flat-concave cacity type,” Chin. Phys. 14(7), 1387–1391 (2005).
[CrossRef]

IEEE J. Quantum Electron. (3)

N. Mermilliod, R. Romero, I. Chartier, C. Garapon, and R. Moncorgé, “Performance of various diode-pumped Nd:laser materials: influence of inhomogeneous broadening,” IEEE J. Quantum Electron. 28(4), 1179–1187 (1992).
[CrossRef]

K. Yoshida, H. Yoshida, and Y. Kato, “Characterization of high average power Nd:GGG slab lasers,” IEEE J. Quantum Electron. 24(6), 1188–1192 (1988).
[CrossRef]

J. J. Zayhowski and P. L. Kelley, “Optimization of Q-switched lasers,” IEEE J. Quantum Electron. 27(9), 2220–2225 (1991).
[CrossRef]

J. Cryst. Growth (2)

Z. Jia, X. Tao, C. Dong, X. Cheng, W. Zhang, F. Xu, and M. Jiang, “Study on crystal growth of large size Nd3+:Gd3Ga5O12 (Nd3+:GGG) by Czochralski method,” J. Cryst. Growth 292(2), 386–390 (2006).
[CrossRef]

Y. Kuwano, S. Saito, and U. Hase, “Crystal growth and optical properties of Nd:GAGG,” J. Cryst. Growth 92(1-2), 17–22 (1988).
[CrossRef]

Jpn. J. Appl. Phys. (2)

H. Kimura, T. Numazawa, M. Sato, and H. Maeda, “Crystal structure and thermal conductivity of Gd3(Ga1-xAlx)5O12 Garnets,” Jpn. J. Appl. Phys. 28(Part 1, No. 9), 1644–1647 (1989).
[CrossRef]

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J. Zhang, X. T. Tao, C. M. Dong, Z. T. Jia, H. H. Yu, Y. Z. Zhang, Y. C. Zhi, and M. H. Jiang, “Crystal growth, optical properties, and CW laser operation at 1.06μm of Nd:GAGG crystals,” Laser Phys. Lett. 6(5), 355–358 (2009).
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[CrossRef]

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabezynski, K. Kopczynski, and Z. Mierczyk, “Diode-pumped Nd:YVO4 laser at 1.34μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
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Opt. Express (4)

Opt. Lett. (1)

Opt. Mater. (4)

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Other (1)

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Figures (7)

Fig. 1
Fig. 1

Experimental configuration of 1.3µm Nd:GAGG laser

Fig. 2
Fig. 2

(a) The relationship between the thermal focal length and the inverse of the incident pump power; (b). The beam radius in the centre of Nd:GAGG and SA versus the absorbed pumped power

Fig. 3
Fig. 3

The CW output power versus pump power.

Fig. 4
Fig. 4

The Q-switch average output power versus pump power.

Fig. 5
Fig. 5

The variation of the pulse width and the repetition rate versus the pump power.

Fig. 6
Fig. 6

The pulse train with the pulse width of 8 kHz.

Fig. 7
Fig. 7

The pulse profile with the shortest pulse width of 18.2 ns.

Equations (1)

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P t h = h ν p × π × ( ω p 2 + ω c 2 ) × ( δ + T ) 4 × η p × σ × τ

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