Abstract

Surface phonon polariton (SPP) characteristics of In0.04Al0.06Ga0.90N/AlN/Al2O3 heterostructure are investigated by means of p-polarized infrared (IR) attenuated total reflection spectroscopy. Two absorption dips corresponding to In0.04Al0.06Ga0.90N SPP modes are observed. In addition, two prominent dips and one relatively weak and broad dip corresponding to the Al2O3 SPP mode, In0.04Al0.06Ga0.90N/Al2O3 interface mode, and Al2O3 bulk polariton mode, respectively, are clearly seen. No surface mode feature originating from the AlN layer is observed because it is too thin. Overall, the observations are in good agreement with the theoretical predictions.

© 2010 OSA

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  25. B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, and P. Ruterana, “First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure,” Phys. Status Solidi (B) 228(2), 457–460 (2001).
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  27. C. Persson, R. Ahyja, A. Ferreira da Silva, and B. Johansson, “First-principle calculations of optical properties of wurtzite AlN and GaN,” J. Cryst. Growth 231(3), 407–414 (2001).
    [CrossRef]
  28. M. Schubert, T. E. Tiwald, and C. M. Herzinger, “Infrared dielectric anisotropy and phonon modes of sapphire,” Phys. Rev. B 61(12), 8187–8201 (2000).
    [CrossRef]

2009

S. S. Ng, T. L Yoon, Z. Hassan, and H. Abu Hassan, “Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate,” Appl. Phys. Lett. 94(24), 241912 (2009).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon-polariton modes of wurtzite structure InN semi-infinite crystal,” Surf. Rev. Lett. 16(03), 355–358 (2009).
[CrossRef]

L. Zhang and J. J. Shi, “Surface phonon polariton modes of wurtzite structure AlxGa1–xN thin film,” Phys. Status Solidi B 246(1), 164–169 (2009).
[CrossRef]

I. Balin, N. Dahan, V. Kleiner, and E. Hasman, “Slow surface phonon polaritons for sensing in the midinfrared spectrum,” Appl. Phys. Lett. 94(11), 111112 (2009).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton in InAlGaN quaternary alloys,” World Acad. Sci., Eng. Technol. 55, 189–193 (2009).

2008

A. J. Huber, N. Ocelic, and R. Hillenbrand, “Local excitation and interference of surface phonon polaritons studied by near-field infrared microscopy,” J. Microsc. 229(3), 389–395 (2008).
[CrossRef] [PubMed]

L. Zhang, “Surface phonon and confined phonon polaritons in wurtizte nitride thin-film structures,” Surf. Rev. Lett. 15(04), 493–501 (2008).
[CrossRef]

J. Bao and X. X. Liang, “Surface and interface phonon-polaritons in bilayer systems of polar ternary mixed crystals,” J. Appl. Phys. 104(3), 033545 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Composition dependence of surface phonon polariton mode in wurtzite InxGa1−xN (0 ≤ x ≤ 1) ternary alloy,” Chin. Phys. Lett. 25(12), 4378–4380 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate,” Solid State Commun. 145(11-12), 535–538 (2008).
[CrossRef]

A. J. Huber, B. Deutsch, L. Novotny, and R. Hillenbrand, “Focusing of surface phonon polaritons,” Appl. Phys. Lett. 92(20), 203104 (2008).
[CrossRef]

2007

M. D. He, L. L. Wang, W. Q. Huang, X. J. Wang, and B. S. Zou, “Surface phonon polaritons in a semi-infinite superlattice with a cap layer consisting of ternary crystal,” Phys. Lett. A 360(4-5), 638–644 (2007).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton mode of wurtzite structure AlxGa1−xN (0≤x≤1) thin films,” Appl. Phys. Lett. 91(8), 081909 (2007).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Experimental and theoretical studies of surface phonon polariton of AlN thin film,” Appl. Phys. Lett. 90(8), 081902 (2007).
[CrossRef]

2006

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

2005

A. J. Huber, N. Ocelic, D. Kazantsev, and R. Hillenbrand, “Near-field imaging of mid-infrared surface phonon polariton propagation,” Appl. Phys. Lett. 87(8), 081103 (2005).
[CrossRef]

2004

G. Yu, N. L. Rowell, and D. J. Lockwood, “Anisotropic infrared optical properties of GaN and sapphire,” J. Vac. Sci. Technol. A 22(4), 1110–1114 (2004).
[CrossRef]

2003

M. S. Anderson, “Enhanced infrared absorption with dielectric nanoparticles,” Appl. Phys. Lett. 83(14), 2964–2966 (2003).
[CrossRef]

2002

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. Mainguy, and Y. Chen, “Coherent emission of light by thermal sources,” Nature 416(6876), 61–64 (2002).
[CrossRef] [PubMed]

2001

C. Persson, R. Ahyja, A. Ferreira da Silva, and B. Johansson, “First-principle calculations of optical properties of wurtzite AlN and GaN,” J. Cryst. Growth 231(3), 407–414 (2001).
[CrossRef]

B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, and P. Ruterana, “First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure,” Phys. Status Solidi (B) 228(2), 457–460 (2001).
[CrossRef]

2000

M. Schubert, T. E. Tiwald, and C. M. Herzinger, “Infrared dielectric anisotropy and phonon modes of sapphire,” Phys. Rev. B 61(12), 8187–8201 (2000).
[CrossRef]

K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamura, “An attenuated-total-reflection study on the surface phonon-polariton in GaN,” J. Phys. Condens. Matter 12(31), 7041–7044 (2000).
[CrossRef]

1997

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

1993

T. Dumelow, T. J. Parker, S. R. P. Smith, and D. R. Tilley, “Far-infrared spectroscopy of phonons and plasmons in semiconductor superlattices,” Surf. Sci. Rep. 17(3), 151–212 (1993).
[CrossRef]

1978

C. K. Williams, T. H. Glisson, J. R. Hauser, and M. A. Littlejohn, “Energy bandgap and lattice constant contours of III-V quaternary alloys of the form AxByCzD or ABxCyDz,” J. Electron. Mater. 7(5), 639–646 (1978).
[CrossRef]

Abbar, B.

B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, and P. Ruterana, “First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure,” Phys. Status Solidi (B) 228(2), 457–460 (2001).
[CrossRef]

Abu Hassan, H.

S. S. Ng, T. L Yoon, Z. Hassan, and H. Abu Hassan, “Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate,” Appl. Phys. Lett. 94(24), 241912 (2009).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon-polariton modes of wurtzite structure InN semi-infinite crystal,” Surf. Rev. Lett. 16(03), 355–358 (2009).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton in InAlGaN quaternary alloys,” World Acad. Sci., Eng. Technol. 55, 189–193 (2009).

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate,” Solid State Commun. 145(11-12), 535–538 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Composition dependence of surface phonon polariton mode in wurtzite InxGa1−xN (0 ≤ x ≤ 1) ternary alloy,” Chin. Phys. Lett. 25(12), 4378–4380 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton mode of wurtzite structure AlxGa1−xN (0≤x≤1) thin films,” Appl. Phys. Lett. 91(8), 081909 (2007).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Experimental and theoretical studies of surface phonon polariton of AlN thin film,” Appl. Phys. Lett. 90(8), 081902 (2007).
[CrossRef]

Ahyja, R.

C. Persson, R. Ahyja, A. Ferreira da Silva, and B. Johansson, “First-principle calculations of optical properties of wurtzite AlN and GaN,” J. Cryst. Growth 231(3), 407–414 (2001).
[CrossRef]

Anderson, M. S.

M. S. Anderson, “Enhanced infrared absorption with dielectric nanoparticles,” Appl. Phys. Lett. 83(14), 2964–2966 (2003).
[CrossRef]

Aourag, H.

B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, and P. Ruterana, “First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure,” Phys. Status Solidi (B) 228(2), 457–460 (2001).
[CrossRef]

Azuhata, T.

K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamura, “An attenuated-total-reflection study on the surface phonon-polariton in GaN,” J. Phys. Condens. Matter 12(31), 7041–7044 (2000).
[CrossRef]

Balin, I.

I. Balin, N. Dahan, V. Kleiner, and E. Hasman, “Slow surface phonon polaritons for sensing in the midinfrared spectrum,” Appl. Phys. Lett. 94(11), 111112 (2009).
[CrossRef]

Bao, J.

J. Bao and X. X. Liang, “Surface and interface phonon-polaritons in bilayer systems of polar ternary mixed crystals,” J. Appl. Phys. 104(3), 033545 (2008).
[CrossRef]

Bouhafs, B.

B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, and P. Ruterana, “First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure,” Phys. Status Solidi (B) 228(2), 457–460 (2001).
[CrossRef]

Carminati, R.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. Mainguy, and Y. Chen, “Coherent emission of light by thermal sources,” Nature 416(6876), 61–64 (2002).
[CrossRef] [PubMed]

Chang, Y. A.

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

Chen, Y.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. Mainguy, and Y. Chen, “Coherent emission of light by thermal sources,” Nature 416(6876), 61–64 (2002).
[CrossRef] [PubMed]

Cheng, T. S.

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

Chichibu, S. F.

K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamura, “An attenuated-total-reflection study on the surface phonon-polariton in GaN,” J. Phys. Condens. Matter 12(31), 7041–7044 (2000).
[CrossRef]

Dahan, N.

I. Balin, N. Dahan, V. Kleiner, and E. Hasman, “Slow surface phonon polaritons for sensing in the midinfrared spectrum,” Appl. Phys. Lett. 94(11), 111112 (2009).
[CrossRef]

Davydov, V. Y.

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

Deutsch, B.

A. J. Huber, B. Deutsch, L. Novotny, and R. Hillenbrand, “Focusing of surface phonon polaritons,” Appl. Phys. Lett. 92(20), 203104 (2008).
[CrossRef]

Dumelow, T.

T. Dumelow, T. J. Parker, S. R. P. Smith, and D. R. Tilley, “Far-infrared spectroscopy of phonons and plasmons in semiconductor superlattices,” Surf. Sci. Rep. 17(3), 151–212 (1993).
[CrossRef]

Ferreira da Silva, A.

C. Persson, R. Ahyja, A. Ferreira da Silva, and B. Johansson, “First-principle calculations of optical properties of wurtzite AlN and GaN,” J. Cryst. Growth 231(3), 407–414 (2001).
[CrossRef]

Foxon, C. T.

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

Glisson, T. H.

C. K. Williams, T. H. Glisson, J. R. Hauser, and M. A. Littlejohn, “Energy bandgap and lattice constant contours of III-V quaternary alloys of the form AxByCzD or ABxCyDz,” J. Electron. Mater. 7(5), 639–646 (1978).
[CrossRef]

Goncharuk, I. N.

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

Greffet, J. J.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. Mainguy, and Y. Chen, “Coherent emission of light by thermal sources,” Nature 416(6876), 61–64 (2002).
[CrossRef] [PubMed]

Hasman, E.

I. Balin, N. Dahan, V. Kleiner, and E. Hasman, “Slow surface phonon polaritons for sensing in the midinfrared spectrum,” Appl. Phys. Lett. 94(11), 111112 (2009).
[CrossRef]

Hassan, Z.

S. S. Ng, T. L Yoon, Z. Hassan, and H. Abu Hassan, “Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate,” Appl. Phys. Lett. 94(24), 241912 (2009).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton in InAlGaN quaternary alloys,” World Acad. Sci., Eng. Technol. 55, 189–193 (2009).

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon-polariton modes of wurtzite structure InN semi-infinite crystal,” Surf. Rev. Lett. 16(03), 355–358 (2009).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Composition dependence of surface phonon polariton mode in wurtzite InxGa1−xN (0 ≤ x ≤ 1) ternary alloy,” Chin. Phys. Lett. 25(12), 4378–4380 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate,” Solid State Commun. 145(11-12), 535–538 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton mode of wurtzite structure AlxGa1−xN (0≤x≤1) thin films,” Appl. Phys. Lett. 91(8), 081909 (2007).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Experimental and theoretical studies of surface phonon polariton of AlN thin film,” Appl. Phys. Lett. 90(8), 081902 (2007).
[CrossRef]

Hauser, J. R.

C. K. Williams, T. H. Glisson, J. R. Hauser, and M. A. Littlejohn, “Energy bandgap and lattice constant contours of III-V quaternary alloys of the form AxByCzD or ABxCyDz,” J. Electron. Mater. 7(5), 639–646 (1978).
[CrossRef]

He, M. D.

M. D. He, L. L. Wang, W. Q. Huang, X. J. Wang, and B. S. Zou, “Surface phonon polaritons in a semi-infinite superlattice with a cap layer consisting of ternary crystal,” Phys. Lett. A 360(4-5), 638–644 (2007).
[CrossRef]

Herzinger, C. M.

M. Schubert, T. E. Tiwald, and C. M. Herzinger, “Infrared dielectric anisotropy and phonon modes of sapphire,” Phys. Rev. B 61(12), 8187–8201 (2000).
[CrossRef]

Hillenbrand, R.

A. J. Huber, B. Deutsch, L. Novotny, and R. Hillenbrand, “Focusing of surface phonon polaritons,” Appl. Phys. Lett. 92(20), 203104 (2008).
[CrossRef]

A. J. Huber, N. Ocelic, and R. Hillenbrand, “Local excitation and interference of surface phonon polaritons studied by near-field infrared microscopy,” J. Microsc. 229(3), 389–395 (2008).
[CrossRef] [PubMed]

A. J. Huber, N. Ocelic, D. Kazantsev, and R. Hillenbrand, “Near-field imaging of mid-infrared surface phonon polariton propagation,” Appl. Phys. Lett. 87(8), 081103 (2005).
[CrossRef]

Huang, W. Q.

M. D. He, L. L. Wang, W. Q. Huang, X. J. Wang, and B. S. Zou, “Surface phonon polaritons in a semi-infinite superlattice with a cap layer consisting of ternary crystal,” Phys. Lett. A 360(4-5), 638–644 (2007).
[CrossRef]

Huber, A. J.

A. J. Huber, N. Ocelic, and R. Hillenbrand, “Local excitation and interference of surface phonon polaritons studied by near-field infrared microscopy,” J. Microsc. 229(3), 389–395 (2008).
[CrossRef] [PubMed]

A. J. Huber, B. Deutsch, L. Novotny, and R. Hillenbrand, “Focusing of surface phonon polaritons,” Appl. Phys. Lett. 92(20), 203104 (2008).
[CrossRef]

A. J. Huber, N. Ocelic, D. Kazantsev, and R. Hillenbrand, “Near-field imaging of mid-infrared surface phonon polariton propagation,” Appl. Phys. Lett. 87(8), 081103 (2005).
[CrossRef]

Johansson, B.

C. Persson, R. Ahyja, A. Ferreira da Silva, and B. Johansson, “First-principle calculations of optical properties of wurtzite AlN and GaN,” J. Cryst. Growth 231(3), 407–414 (2001).
[CrossRef]

Joulain, K.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. Mainguy, and Y. Chen, “Coherent emission of light by thermal sources,” Nature 416(6876), 61–64 (2002).
[CrossRef] [PubMed]

Kazantsev, D.

A. J. Huber, N. Ocelic, D. Kazantsev, and R. Hillenbrand, “Near-field imaging of mid-infrared surface phonon polariton propagation,” Appl. Phys. Lett. 87(8), 081103 (2005).
[CrossRef]

Kleiner, V.

I. Balin, N. Dahan, V. Kleiner, and E. Hasman, “Slow surface phonon polaritons for sensing in the midinfrared spectrum,” Appl. Phys. Lett. 94(11), 111112 (2009).
[CrossRef]

Koga, T.

K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamura, “An attenuated-total-reflection study on the surface phonon-polariton in GaN,” J. Phys. Condens. Matter 12(31), 7041–7044 (2000).
[CrossRef]

Kuo, H. C.

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

Kuo, Y. K.

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

Liang, X. X.

J. Bao and X. X. Liang, “Surface and interface phonon-polaritons in bilayer systems of polar ternary mixed crystals,” J. Appl. Phys. 104(3), 033545 (2008).
[CrossRef]

Littlejohn, M. A.

C. K. Williams, T. H. Glisson, J. R. Hauser, and M. A. Littlejohn, “Energy bandgap and lattice constant contours of III-V quaternary alloys of the form AxByCzD or ABxCyDz,” J. Electron. Mater. 7(5), 639–646 (1978).
[CrossRef]

Lockwood, D. J.

G. Yu, N. L. Rowell, and D. J. Lockwood, “Anisotropic infrared optical properties of GaN and sapphire,” J. Vac. Sci. Technol. A 22(4), 1110–1114 (2004).
[CrossRef]

Lu, T. C.

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

Mainguy, S.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. Mainguy, and Y. Chen, “Coherent emission of light by thermal sources,” Nature 416(6876), 61–64 (2002).
[CrossRef] [PubMed]

Mulet, J. P.

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. Mainguy, and Y. Chen, “Coherent emission of light by thermal sources,” Nature 416(6876), 61–64 (2002).
[CrossRef] [PubMed]

Nakamura, S.

K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamura, “An attenuated-total-reflection study on the surface phonon-polariton in GaN,” J. Phys. Condens. Matter 12(31), 7041–7044 (2000).
[CrossRef]

Ng, S. S.

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton in InAlGaN quaternary alloys,” World Acad. Sci., Eng. Technol. 55, 189–193 (2009).

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon-polariton modes of wurtzite structure InN semi-infinite crystal,” Surf. Rev. Lett. 16(03), 355–358 (2009).
[CrossRef]

S. S. Ng, T. L Yoon, Z. Hassan, and H. Abu Hassan, “Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate,” Appl. Phys. Lett. 94(24), 241912 (2009).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Composition dependence of surface phonon polariton mode in wurtzite InxGa1−xN (0 ≤ x ≤ 1) ternary alloy,” Chin. Phys. Lett. 25(12), 4378–4380 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate,” Solid State Commun. 145(11-12), 535–538 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton mode of wurtzite structure AlxGa1−xN (0≤x≤1) thin films,” Appl. Phys. Lett. 91(8), 081909 (2007).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Experimental and theoretical studies of surface phonon polariton of AlN thin film,” Appl. Phys. Lett. 90(8), 081902 (2007).
[CrossRef]

Nouet, G.

B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, and P. Ruterana, “First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure,” Phys. Status Solidi (B) 228(2), 457–460 (2001).
[CrossRef]

Novotny, L.

A. J. Huber, B. Deutsch, L. Novotny, and R. Hillenbrand, “Focusing of surface phonon polaritons,” Appl. Phys. Lett. 92(20), 203104 (2008).
[CrossRef]

Ocelic, N.

A. J. Huber, N. Ocelic, and R. Hillenbrand, “Local excitation and interference of surface phonon polaritons studied by near-field infrared microscopy,” J. Microsc. 229(3), 389–395 (2008).
[CrossRef] [PubMed]

A. J. Huber, N. Ocelic, D. Kazantsev, and R. Hillenbrand, “Near-field imaging of mid-infrared surface phonon polariton propagation,” Appl. Phys. Lett. 87(8), 081103 (2005).
[CrossRef]

Parker, T. J.

T. Dumelow, T. J. Parker, S. R. P. Smith, and D. R. Tilley, “Far-infrared spectroscopy of phonons and plasmons in semiconductor superlattices,” Surf. Sci. Rep. 17(3), 151–212 (1993).
[CrossRef]

Persson, C.

C. Persson, R. Ahyja, A. Ferreira da Silva, and B. Johansson, “First-principle calculations of optical properties of wurtzite AlN and GaN,” J. Cryst. Growth 231(3), 407–414 (2001).
[CrossRef]

Rowell, N. L.

G. Yu, N. L. Rowell, and D. J. Lockwood, “Anisotropic infrared optical properties of GaN and sapphire,” J. Vac. Sci. Technol. A 22(4), 1110–1114 (2004).
[CrossRef]

Ruterana, P.

B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, and P. Ruterana, “First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure,” Phys. Status Solidi (B) 228(2), 457–460 (2001).
[CrossRef]

Schubert, M.

M. Schubert, T. E. Tiwald, and C. M. Herzinger, “Infrared dielectric anisotropy and phonon modes of sapphire,” Phys. Rev. B 61(12), 8187–8201 (2000).
[CrossRef]

Shi, J. J.

L. Zhang and J. J. Shi, “Surface phonon polariton modes of wurtzite structure AlxGa1–xN thin film,” Phys. Status Solidi B 246(1), 164–169 (2009).
[CrossRef]

Smirnovn, A. N.

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

Smith, S. R. P.

T. Dumelow, T. J. Parker, S. R. P. Smith, and D. R. Tilley, “Far-infrared spectroscopy of phonons and plasmons in semiconductor superlattices,” Surf. Sci. Rep. 17(3), 151–212 (1993).
[CrossRef]

Sota, T.

K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamura, “An attenuated-total-reflection study on the surface phonon-polariton in GaN,” J. Phys. Condens. Matter 12(31), 7041–7044 (2000).
[CrossRef]

Subashiev, A. V.

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

Tilley, D. R.

T. Dumelow, T. J. Parker, S. R. P. Smith, and D. R. Tilley, “Far-infrared spectroscopy of phonons and plasmons in semiconductor superlattices,” Surf. Sci. Rep. 17(3), 151–212 (1993).
[CrossRef]

Tiwald, T. E.

M. Schubert, T. E. Tiwald, and C. M. Herzinger, “Infrared dielectric anisotropy and phonon modes of sapphire,” Phys. Rev. B 61(12), 8187–8201 (2000).
[CrossRef]

Torii, K.

K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamura, “An attenuated-total-reflection study on the surface phonon-polariton in GaN,” J. Phys. Condens. Matter 12(31), 7041–7044 (2000).
[CrossRef]

Wang, L. L.

M. D. He, L. L. Wang, W. Q. Huang, X. J. Wang, and B. S. Zou, “Surface phonon polaritons in a semi-infinite superlattice with a cap layer consisting of ternary crystal,” Phys. Lett. A 360(4-5), 638–644 (2007).
[CrossRef]

Wang, S. C.

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

Wang, T. C.

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

Wang, X. J.

M. D. He, L. L. Wang, W. Q. Huang, X. J. Wang, and B. S. Zou, “Surface phonon polaritons in a semi-infinite superlattice with a cap layer consisting of ternary crystal,” Phys. Lett. A 360(4-5), 638–644 (2007).
[CrossRef]

Williams, C. K.

C. K. Williams, T. H. Glisson, J. R. Hauser, and M. A. Littlejohn, “Energy bandgap and lattice constant contours of III-V quaternary alloys of the form AxByCzD or ABxCyDz,” J. Electron. Mater. 7(5), 639–646 (1978).
[CrossRef]

Yen, S. H.

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

Yoon, T. L

S. S. Ng, T. L Yoon, Z. Hassan, and H. Abu Hassan, “Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate,” Appl. Phys. Lett. 94(24), 241912 (2009).
[CrossRef]

Yu, G.

G. Yu, N. L. Rowell, and D. J. Lockwood, “Anisotropic infrared optical properties of GaN and sapphire,” J. Vac. Sci. Technol. A 22(4), 1110–1114 (2004).
[CrossRef]

Zhang, L.

L. Zhang and J. J. Shi, “Surface phonon polariton modes of wurtzite structure AlxGa1–xN thin film,” Phys. Status Solidi B 246(1), 164–169 (2009).
[CrossRef]

L. Zhang, “Surface phonon and confined phonon polaritons in wurtizte nitride thin-film structures,” Surf. Rev. Lett. 15(04), 493–501 (2008).
[CrossRef]

Zolotareva, R. V.

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

Zou, B. S.

M. D. He, L. L. Wang, W. Q. Huang, X. J. Wang, and B. S. Zou, “Surface phonon polaritons in a semi-infinite superlattice with a cap layer consisting of ternary crystal,” Phys. Lett. A 360(4-5), 638–644 (2007).
[CrossRef]

Appl. Phys. Lett.

I. Balin, N. Dahan, V. Kleiner, and E. Hasman, “Slow surface phonon polaritons for sensing in the midinfrared spectrum,” Appl. Phys. Lett. 94(11), 111112 (2009).
[CrossRef]

M. S. Anderson, “Enhanced infrared absorption with dielectric nanoparticles,” Appl. Phys. Lett. 83(14), 2964–2966 (2003).
[CrossRef]

A. J. Huber, N. Ocelic, D. Kazantsev, and R. Hillenbrand, “Near-field imaging of mid-infrared surface phonon polariton propagation,” Appl. Phys. Lett. 87(8), 081103 (2005).
[CrossRef]

A. J. Huber, B. Deutsch, L. Novotny, and R. Hillenbrand, “Focusing of surface phonon polaritons,” Appl. Phys. Lett. 92(20), 203104 (2008).
[CrossRef]

S. S. Ng, T. L Yoon, Z. Hassan, and H. Abu Hassan, “Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate,” Appl. Phys. Lett. 94(24), 241912 (2009).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton mode of wurtzite structure AlxGa1−xN (0≤x≤1) thin films,” Appl. Phys. Lett. 91(8), 081909 (2007).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Experimental and theoretical studies of surface phonon polariton of AlN thin film,” Appl. Phys. Lett. 90(8), 081902 (2007).
[CrossRef]

Chin. Phys. Lett.

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Composition dependence of surface phonon polariton mode in wurtzite InxGa1−xN (0 ≤ x ≤ 1) ternary alloy,” Chin. Phys. Lett. 25(12), 4378–4380 (2008).
[CrossRef]

J. Appl. Phys.

J. Bao and X. X. Liang, “Surface and interface phonon-polaritons in bilayer systems of polar ternary mixed crystals,” J. Appl. Phys. 104(3), 033545 (2008).
[CrossRef]

J. Cryst. Growth

C. Persson, R. Ahyja, A. Ferreira da Silva, and B. Johansson, “First-principle calculations of optical properties of wurtzite AlN and GaN,” J. Cryst. Growth 231(3), 407–414 (2001).
[CrossRef]

J. Electron. Mater.

C. K. Williams, T. H. Glisson, J. R. Hauser, and M. A. Littlejohn, “Energy bandgap and lattice constant contours of III-V quaternary alloys of the form AxByCzD or ABxCyDz,” J. Electron. Mater. 7(5), 639–646 (1978).
[CrossRef]

J. Microsc.

A. J. Huber, N. Ocelic, and R. Hillenbrand, “Local excitation and interference of surface phonon polaritons studied by near-field infrared microscopy,” J. Microsc. 229(3), 389–395 (2008).
[CrossRef] [PubMed]

J. Phys. Condens. Matter

K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamura, “An attenuated-total-reflection study on the surface phonon-polariton in GaN,” J. Phys. Condens. Matter 12(31), 7041–7044 (2000).
[CrossRef]

J. Vac. Sci. Technol. A

G. Yu, N. L. Rowell, and D. J. Lockwood, “Anisotropic infrared optical properties of GaN and sapphire,” J. Vac. Sci. Technol. A 22(4), 1110–1114 (2004).
[CrossRef]

Nature

J. J. Greffet, R. Carminati, K. Joulain, J. P. Mulet, S. Mainguy, and Y. Chen, “Coherent emission of light by thermal sources,” Nature 416(6876), 61–64 (2002).
[CrossRef] [PubMed]

Phys. Lett. A

M. D. He, L. L. Wang, W. Q. Huang, X. J. Wang, and B. S. Zou, “Surface phonon polaritons in a semi-infinite superlattice with a cap layer consisting of ternary crystal,” Phys. Lett. A 360(4-5), 638–644 (2007).
[CrossRef]

Phys. Rev. B

M. Schubert, T. E. Tiwald, and C. M. Herzinger, “Infrared dielectric anisotropy and phonon modes of sapphire,” Phys. Rev. B 61(12), 8187–8201 (2000).
[CrossRef]

Phys. Status Solidi (B)

B. Abbar, B. Bouhafs, H. Aourag, G. Nouet, and P. Ruterana, “First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure,” Phys. Status Solidi (B) 228(2), 457–460 (2001).
[CrossRef]

Phys. Status Solidi B

L. Zhang and J. J. Shi, “Surface phonon polariton modes of wurtzite structure AlxGa1–xN thin film,” Phys. Status Solidi B 246(1), 164–169 (2009).
[CrossRef]

Semicond. Sci. Technol.

Y. A. Chang, S. H. Yen, T. C. Wang, H. C. Kuo, Y. K. Kuo, T. C. Lu, and S. C. Wang, “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,” Semicond. Sci. Technol. 21(5), 598–603 (2006).
[CrossRef]

Solid State Commun.

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate,” Solid State Commun. 145(11-12), 535–538 (2008).
[CrossRef]

V. Y. Davydov, A. V. Subashiev, T. S. Cheng, C. T. Foxon, I. N. Goncharuk, A. N. Smirnovn, and R. V. Zolotareva, “Raman scattering by surface polaritons in cubic GaN epitaxial layers,” Solid State Commun. 104(7), 397–400 (1997).
[CrossRef]

Surf. Rev. Lett.

L. Zhang, “Surface phonon and confined phonon polaritons in wurtizte nitride thin-film structures,” Surf. Rev. Lett. 15(04), 493–501 (2008).
[CrossRef]

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon-polariton modes of wurtzite structure InN semi-infinite crystal,” Surf. Rev. Lett. 16(03), 355–358 (2009).
[CrossRef]

Surf. Sci. Rep.

T. Dumelow, T. J. Parker, S. R. P. Smith, and D. R. Tilley, “Far-infrared spectroscopy of phonons and plasmons in semiconductor superlattices,” Surf. Sci. Rep. 17(3), 151–212 (1993).
[CrossRef]

World Acad. Sci., Eng. Technol.

S. S. Ng, Z. Hassan, and H. Abu Hassan, “Surface phonon polariton in InAlGaN quaternary alloys,” World Acad. Sci., Eng. Technol. 55, 189–193 (2009).

Other

S. Adachi, Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles (Kluwer Academic, Boston, 1999), p. 38.

S. K. Mohd Bakhori, S. C. Lee, M. A. Ahmad, S. S. Ng, and H. Abu Hassan, “Polarized infrared reflectance studies of quaternary In0.04Al0.06Ga0.90N”, presented at the National Physics Conference 2009 (PERFIK2009), Malacca, Malaysia, 7–9 Dec, 2009.

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Figures (2)

Fig. 1
Fig. 1

Room temperature p-polarized IR ATR spectrum of α-In0.04Al0.06Ga0.90N/AlN/Al2O3 heterostructure.

Fig. 2
Fig. 2

Theoretical SP dispersion curves (a) air-In0.04Al0.06Ga0.90N, (b) air-AlN, (c) air-Al2O3, (d) air-In0.04Al0.06Ga0.90N/Al2O3, (e) air-AlN/Al2O3, (f) air-In0.04Al0.06Ga0.90N/AlN/Al2O3 structures together with the theoretical ATR spectra. For the ATR spectra, the prism material is the Ge crystal. The vacuum light wave and the light wave in ATR crystal (kp ) are indicated by dash and dash-dot-dot lines, respectively. The intersections of the kp line and the branches of the SP dispersion curve correspond to the SPP and interface modes. The crossing points marked by “*” correspond to the virtual SPP mode.

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

ε|| ()(w)=(εjwLOj2w2iwγLOjwTOj2w2iwγTOj) || ().
ε|| ()(w)InxAlyGazN=yzε|| ()(w)AluGa1uN+xzε|| ()(w)GavIn1vN+xyε|| ()(w)InwAl1wNxy+yz+zx.

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