Abstract

A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

© 2009 OSA

PDF Article

References

  • View by:
  • |
  • |
  • |

  1. I.-S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
    [CrossRef]
  2. R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
    [CrossRef]
  3. S. Mridha and D. Basak, “Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction,” J. Appl. Phys. 101(8), 083102 (2007).
    [CrossRef]
  4. M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si pin photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18(23), 2442–2444 (2006).
    [CrossRef]
  5. M. Oehme, J. Werner, E. Kasper, M. Jutzi and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89, 071117–1-071117–3 (2006).
  6. J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
    [CrossRef]
  7. G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
    [CrossRef]
  8. M. K. Emsley, O. Dosunmu, and M. S. Ünlü, “High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-On-Insulator Substrates,” IEEE Photon. Technol. Lett. 14(4), 519–521 (2002).
    [CrossRef]
  9. O. I. Dosunmu, D. D. Can, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
    [CrossRef]
  10. C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Lett. 21(6), 307–309 (2000).
    [CrossRef]
  11. B.-C. Hsu, C. W. Liu, W. T. Liu, and C.-H. Lin, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron. Dev. 48(8), 1747–1749 (2001).
    [CrossRef]
  12. R. A. Ismail, W. K. Khalaf, and O. A. Abdulrazaq, “Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation,” Solid-State Electron. 51(6), 817–819 (2007).
    [CrossRef]
  13. K. Kim, M. Kim, and S. M. Cho, “Pulsed electrodeposition of palladium nanowire arrays using AAO template,” Mater. Chem. Phys. 96(2-3), 278–282 (2006).
    [CrossRef]
  14. X. H. Wang, T. Akahane, H. Orikasa, T. Kyotani, and Y. Y. Fu, “Brilliant and tunable color of carbon- coated thin anodic aluminum oxide films,” Appl. Phys. Lett. 91(1), 011908 (2007).
    [CrossRef]
  15. J. Wang, C. W. Wang, Y. Li, and W. M. Liu, “Optical constants of anodic aluminum oxide films formed in oxalic acid solution,” Thin Solid Films 516(21), 7689–7694 (2008).
    [CrossRef]
  16. A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, “Oxygen Vacancy with Large Lattice Distortion as an Origin of Leakage Currents in SiO,” IEEE IEDM 97, 703–706 (1997).
  17. L. Heikkila, T. Kuusela, and H.-P. Hedman, “Electroluminescence in Si/SiO2 layer structures,” J. Appl. Phys. 89(4), 2179–2184 (2001).
    [CrossRef]
  18. H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
    [CrossRef]
  19. J. Yuan and D. Haneman, “Visible electroluminescence from native SiO2 on n-type Si substrates,” J. Appl. Phys. 86(4), 2358–2360 (1999).
    [CrossRef]
  20. G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys. 78(3), 2006–2009 (1995).
    [CrossRef]
  21. W. Lee, K. Nielsch, and U. Gösele, “Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization,” Nanotechnology 18(47), 475713 (2007).
    [CrossRef]
  22. J. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, and J. A. Jiménez-Tejada, “A model for the quantized accumulation layer in metal-insulator-semiconductor structures,” Solid-State Electron. 38(1), 203–210 (1995).
    [CrossRef]

2008

J. Wang, C. W. Wang, Y. Li, and W. M. Liu, “Optical constants of anodic aluminum oxide films formed in oxalic acid solution,” Thin Solid Films 516(21), 7689–7694 (2008).
[CrossRef]

2007

X. H. Wang, T. Akahane, H. Orikasa, T. Kyotani, and Y. Y. Fu, “Brilliant and tunable color of carbon- coated thin anodic aluminum oxide films,” Appl. Phys. Lett. 91(1), 011908 (2007).
[CrossRef]

R. A. Ismail, W. K. Khalaf, and O. A. Abdulrazaq, “Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation,” Solid-State Electron. 51(6), 817–819 (2007).
[CrossRef]

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

S. Mridha and D. Basak, “Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction,” J. Appl. Phys. 101(8), 083102 (2007).
[CrossRef]

W. Lee, K. Nielsch, and U. Gösele, “Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization,” Nanotechnology 18(47), 475713 (2007).
[CrossRef]

2006

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si pin photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18(23), 2442–2444 (2006).
[CrossRef]

K. Kim, M. Kim, and S. M. Cho, “Pulsed electrodeposition of palladium nanowire arrays using AAO template,” Mater. Chem. Phys. 96(2-3), 278–282 (2006).
[CrossRef]

2005

O. I. Dosunmu, D. D. Can, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[CrossRef]

2003

I.-S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[CrossRef]

2002

M. K. Emsley, O. Dosunmu, and M. S. Ünlü, “High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-On-Insulator Substrates,” IEEE Photon. Technol. Lett. 14(4), 519–521 (2002).
[CrossRef]

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[CrossRef]

2001

B.-C. Hsu, C. W. Liu, W. T. Liu, and C.-H. Lin, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron. Dev. 48(8), 1747–1749 (2001).
[CrossRef]

L. Heikkila, T. Kuusela, and H.-P. Hedman, “Electroluminescence in Si/SiO2 layer structures,” J. Appl. Phys. 89(4), 2179–2184 (2001).
[CrossRef]

2000

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Lett. 21(6), 307–309 (2000).
[CrossRef]

1999

J. Yuan and D. Haneman, “Visible electroluminescence from native SiO2 on n-type Si substrates,” J. Appl. Phys. 86(4), 2358–2360 (1999).
[CrossRef]

1998

G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
[CrossRef]

1997

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, “Oxygen Vacancy with Large Lattice Distortion as an Origin of Leakage Currents in SiO,” IEEE IEDM 97, 703–706 (1997).

1995

G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys. 78(3), 2006–2009 (1995).
[CrossRef]

J. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, and J. A. Jiménez-Tejada, “A model for the quantized accumulation layer in metal-insulator-semiconductor structures,” Solid-State Electron. 38(1), 203–210 (1995).
[CrossRef]

Abdulrazaq, O. A.

R. A. Ismail, W. K. Khalaf, and O. A. Abdulrazaq, “Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation,” Solid-State Electron. 51(6), 817–819 (2007).
[CrossRef]

Akahane, T.

X. H. Wang, T. Akahane, H. Orikasa, T. Kyotani, and Y. Y. Fu, “Brilliant and tunable color of carbon- coated thin anodic aluminum oxide films,” Appl. Phys. Lett. 91(1), 011908 (2007).
[CrossRef]

Bae, H. S.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[CrossRef]

Bamiduro, O.

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

Banqueri, J.

J. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, and J. A. Jiménez-Tejada, “A model for the quantized accumulation layer in metal-insulator-semiconductor structures,” Solid-State Electron. 38(1), 203–210 (1995).
[CrossRef]

Basak, D.

S. Mridha and D. Basak, “Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction,” J. Appl. Phys. 101(8), 083102 (2007).
[CrossRef]

Bean, J. C.

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

Burger, A.

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

Campbell, J. C.

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

Camprbell, J. C.

G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
[CrossRef]

Can, D. D.

O. I. Dosunmu, D. D. Can, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[CrossRef]

Chetrit, Y.

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si pin photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18(23), 2442–2444 (2006).
[CrossRef]

Cho, S. M.

K. Kim, M. Kim, and S. M. Cho, “Pulsed electrodeposition of palladium nanowire arrays using AAO template,” Mater. Chem. Phys. 96(2-3), 278–282 (2006).
[CrossRef]

Cui, Y.

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

Denton, J.

G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
[CrossRef]

Dosunmu, O.

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si pin photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18(23), 2442–2444 (2006).
[CrossRef]

M. K. Emsley, O. Dosunmu, and M. S. Ünlü, “High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-On-Insulator Substrates,” IEEE Photon. Technol. Lett. 14(4), 519–521 (2002).
[CrossRef]

Dosunmu, O. I.

O. I. Dosunmu, D. D. Can, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[CrossRef]

Emsley, M. K.

O. I. Dosunmu, D. D. Can, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[CrossRef]

M. K. Emsley, O. Dosunmu, and M. S. Ünlü, “High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-On-Insulator Substrates,” IEEE Photon. Technol. Lett. 14(4), 519–521 (2002).
[CrossRef]

Fu, Y. Y.

X. H. Wang, T. Akahane, H. Orikasa, T. Kyotani, and Y. Y. Fu, “Brilliant and tunable color of carbon- coated thin anodic aluminum oxide films,” Appl. Phys. Lett. 91(1), 011908 (2007).
[CrossRef]

Gámiz, F.

J. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, and J. A. Jiménez-Tejada, “A model for the quantized accumulation layer in metal-insulator-semiconductor structures,” Solid-State Electron. 38(1), 203–210 (1995).
[CrossRef]

Gösele, U.

W. Lee, K. Nielsch, and U. Gösele, “Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization,” Nanotechnology 18(47), 475713 (2007).
[CrossRef]

Haneman, D.

J. Yuan and D. Haneman, “Visible electroluminescence from native SiO2 on n-type Si substrates,” J. Appl. Phys. 86(4), 2358–2360 (1999).
[CrossRef]

Hedman, H.-P.

L. Heikkila, T. Kuusela, and H.-P. Hedman, “Electroluminescence in Si/SiO2 layer structures,” J. Appl. Phys. 89(4), 2179–2184 (2001).
[CrossRef]

Heikkila, L.

L. Heikkila, T. Kuusela, and H.-P. Hedman, “Electroluminescence in Si/SiO2 layer structures,” J. Appl. Phys. 89(4), 2179–2184 (2001).
[CrossRef]

Hsu, B. C.

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Lett. 21(6), 307–309 (2000).
[CrossRef]

Hsu, B.-C.

B.-C. Hsu, C. W. Liu, W. T. Liu, and C.-H. Lin, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron. Dev. 48(8), 1747–1749 (2001).
[CrossRef]

Im, S.

I.-S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[CrossRef]

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[CrossRef]

Ismail, R. A.

R. A. Ismail, W. K. Khalaf, and O. A. Abdulrazaq, “Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation,” Solid-State Electron. 51(6), 817–819 (2007).
[CrossRef]

Jeong, I.-S.

I.-S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[CrossRef]

Jieming Qi, C. L.

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

Jiménez-Tejada, J. A.

J. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, and J. A. Jiménez-Tejada, “A model for the quantized accumulation layer in metal-insulator-semiconductor structures,” Solid-State Electron. 38(1), 203–210 (1995).
[CrossRef]

Khalaf, W. K.

R. A. Ismail, W. K. Khalaf, and O. A. Abdulrazaq, “Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation,” Solid-State Electron. 51(6), 817–819 (2007).
[CrossRef]

Kim, J. H.

I.-S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[CrossRef]

Kim, K.

K. Kim, M. Kim, and S. M. Cho, “Pulsed electrodeposition of palladium nanowire arrays using AAO template,” Mater. Chem. Phys. 96(2-3), 278–282 (2006).
[CrossRef]

Kim, M.

K. Kim, M. Kim, and S. M. Cho, “Pulsed electrodeposition of palladium nanowire arrays using AAO template,” Mater. Chem. Phys. 96(2-3), 278–282 (2006).
[CrossRef]

Kim, T. G.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[CrossRef]

Kimerling, L. C.

O. I. Dosunmu, D. D. Can, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[CrossRef]

Konda, R. B.

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

Kumashiro, S.

A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, “Oxygen Vacancy with Large Lattice Distortion as an Origin of Leakage Currents in SiO,” IEEE IEDM 97, 703–706 (1997).

Kuo, W. S.

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Lett. 21(6), 307–309 (2000).
[CrossRef]

Kuusela, T.

L. Heikkila, T. Kuusela, and H.-P. Hedman, “Electroluminescence in Si/SiO2 layer structures,” J. Appl. Phys. 89(4), 2179–2184 (2001).
[CrossRef]

Kyotani, T.

X. H. Wang, T. Akahane, H. Orikasa, T. Kyotani, and Y. Y. Fu, “Brilliant and tunable color of carbon- coated thin anodic aluminum oxide films,” Appl. Phys. Lett. 91(1), 011908 (2007).
[CrossRef]

Lee, M. H.

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Lett. 21(6), 307–309 (2000).
[CrossRef]

Lee, W.

W. Lee, K. Nielsch, and U. Gösele, “Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization,” Nanotechnology 18(47), 475713 (2007).
[CrossRef]

Li, A. P.

G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys. 78(3), 2006–2009 (1995).
[CrossRef]

Li, B. C.

G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys. 78(3), 2006–2009 (1995).
[CrossRef]

Li, H.

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

Li, R.

G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
[CrossRef]

Li, Y.

J. Wang, C. W. Wang, Y. Li, and W. M. Liu, “Optical constants of anodic aluminum oxide films formed in oxalic acid solution,” Thin Solid Films 516(21), 7689–7694 (2008).
[CrossRef]

Lin, C.-H.

B.-C. Hsu, C. W. Liu, W. T. Liu, and C.-H. Lin, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron. Dev. 48(8), 1747–1749 (2001).
[CrossRef]

Liu, C. W.

B.-C. Hsu, C. W. Liu, W. T. Liu, and C.-H. Lin, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron. Dev. 48(8), 1747–1749 (2001).
[CrossRef]

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Lett. 21(6), 307–309 (2000).
[CrossRef]

Liu, W. M.

J. Wang, C. W. Wang, Y. Li, and W. M. Liu, “Optical constants of anodic aluminum oxide films formed in oxalic acid solution,” Thin Solid Films 516(21), 7689–7694 (2008).
[CrossRef]

Liu, W. T.

B.-C. Hsu, C. W. Liu, W. T. Liu, and C.-H. Lin, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron. Dev. 48(8), 1747–1749 (2001).
[CrossRef]

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Lett. 21(6), 307–309 (2000).
[CrossRef]

López-Villanueva, J.

J. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, and J. A. Jiménez-Tejada, “A model for the quantized accumulation layer in metal-insulator-semiconductor structures,” Solid-State Electron. 38(1), 203–210 (1995).
[CrossRef]

Melchor, I.

J. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, and J. A. Jiménez-Tejada, “A model for the quantized accumulation layer in metal-insulator-semiconductor structures,” Solid-State Electron. 38(1), 203–210 (1995).
[CrossRef]

Miyamoto, Y.

A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, “Oxygen Vacancy with Large Lattice Distortion as an Origin of Leakage Currents in SiO,” IEEE IEDM 97, 703–706 (1997).

Morse, M.

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si pin photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18(23), 2442–2444 (2006).
[CrossRef]

Mridha, S.

S. Mridha and D. Basak, “Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction,” J. Appl. Phys. 101(8), 083102 (2007).
[CrossRef]

Mundle, R.

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

Mustafa, H.

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

Neudeck, G. W.

G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
[CrossRef]

Nie, J.

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

Nielsch, K.

W. Lee, K. Nielsch, and U. Gösele, “Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization,” Nanotechnology 18(47), 475713 (2007).
[CrossRef]

Orikasa, H.

X. H. Wang, T. Akahane, H. Orikasa, T. Kyotani, and Y. Y. Fu, “Brilliant and tunable color of carbon- coated thin anodic aluminum oxide films,” Appl. Phys. Lett. 91(1), 011908 (2007).
[CrossRef]

Oshiyama, A.

A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, “Oxygen Vacancy with Large Lattice Distortion as an Origin of Leakage Currents in SiO,” IEEE IEDM 97, 703–706 (1997).

Pradhan, A. K.

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

Qi, J.

G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
[CrossRef]

Qin, G. G.

G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys. 78(3), 2006–2009 (1995).
[CrossRef]

Roy, U. N.

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

Sarid, G.

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si pin photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18(23), 2442–2444 (2006).
[CrossRef]

Schaub, J.

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

Schaub, J. D.

G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
[CrossRef]

Schow, R.

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

Song, J. H.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[CrossRef]

Unlu, M. S.

O. I. Dosunmu, D. D. Can, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[CrossRef]

Ünlü, M. S.

M. K. Emsley, O. Dosunmu, and M. S. Ünlü, “High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-On-Insulator Substrates,” IEEE Photon. Technol. Lett. 14(4), 519–521 (2002).
[CrossRef]

Wang, C. W.

J. Wang, C. W. Wang, Y. Li, and W. M. Liu, “Optical constants of anodic aluminum oxide films formed in oxalic acid solution,” Thin Solid Films 516(21), 7689–7694 (2008).
[CrossRef]

Wang, J.

J. Wang, C. W. Wang, Y. Li, and W. M. Liu, “Optical constants of anodic aluminum oxide films formed in oxalic acid solution,” Thin Solid Films 516(21), 7689–7694 (2008).
[CrossRef]

Wang, X. H.

X. H. Wang, T. Akahane, H. Orikasa, T. Kyotani, and Y. Y. Fu, “Brilliant and tunable color of carbon- coated thin anodic aluminum oxide films,” Appl. Phys. Lett. 91(1), 011908 (2007).
[CrossRef]

Whang, C. N.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[CrossRef]

Yokozawa, A.

A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, “Oxygen Vacancy with Large Lattice Distortion as an Origin of Leakage Currents in SiO,” IEEE IEDM 97, 703–706 (1997).

Yuan, J.

J. Yuan and D. Haneman, “Visible electroluminescence from native SiO2 on n-type Si substrates,” J. Appl. Phys. 86(4), 2358–2360 (1999).
[CrossRef]

Yun, J. S.

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[CrossRef]

Zhang, B. R.

G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys. 78(3), 2006–2009 (1995).
[CrossRef]

Appl. Phys. Lett.

I.-S. Jeong, J. H. Kim, and S. Im, “Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure,” Appl. Phys. Lett. 83(14), 2946–2948 (2003).
[CrossRef]

R. B. Konda, R. Mundle, H. Mustafa, O. Bamiduro, A. K. Pradhan, U. N. Roy, Y. Cui, and A. Burger, “Surface plasmon excitation via Au nanoparticles in n-CdSe/p-Si heterojunction diodes,” Appl. Phys. Lett. 91(19), 191111 (2007).
[CrossRef]

X. H. Wang, T. Akahane, H. Orikasa, T. Kyotani, and Y. Y. Fu, “Brilliant and tunable color of carbon- coated thin anodic aluminum oxide films,” Appl. Phys. Lett. 91(1), 011908 (2007).
[CrossRef]

IEEE Electron Device Lett.

C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Lett. 21(6), 307–309 (2000).
[CrossRef]

IEEE IEDM

A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, “Oxygen Vacancy with Large Lattice Distortion as an Origin of Leakage Currents in SiO,” IEEE IEDM 97, 703–706 (1997).

IEEE Photon. Technol. Lett.

M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si pin photodetectors for standard receiver modules,” IEEE Photon. Technol. Lett. 18(23), 2442–2444 (2006).
[CrossRef]

J. C. Bean, C. L. Jieming Qi, R. Schow, H. Li, J. Nie, J. Schaub, and J. C. Campbell, “High-Speed Polysilicon Resonant-Cavity Photodiode with SiO2 –Si Bragg Reflectors,” IEEE Photon. Technol. Lett. 9(6), 806–808 (1997).
[CrossRef]

G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Camprbell, “Selective Epitaxial Growth Si Resonant-Cavity Photodetector,” IEEE Photon. Technol. Lett. 10(1), 129–131 (1998).
[CrossRef]

M. K. Emsley, O. Dosunmu, and M. S. Ünlü, “High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-On-Insulator Substrates,” IEEE Photon. Technol. Lett. 14(4), 519–521 (2002).
[CrossRef]

O. I. Dosunmu, D. D. Can, M. K. Emsley, L. C. Kimerling, and M. S. Unlu, “High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photon. Technol. Lett. 17(1), 175–177 (2005).
[CrossRef]

IEEE Trans. Electron. Dev.

B.-C. Hsu, C. W. Liu, W. T. Liu, and C.-H. Lin, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron. Dev. 48(8), 1747–1749 (2001).
[CrossRef]

J. Appl. Phys.

L. Heikkila, T. Kuusela, and H.-P. Hedman, “Electroluminescence in Si/SiO2 layer structures,” J. Appl. Phys. 89(4), 2179–2184 (2001).
[CrossRef]

H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, “Electroluminescence mechanism in SiOx layers containing radiative centers,” J. Appl. Phys. 91(7), 4078–4081 (2002).
[CrossRef]

J. Yuan and D. Haneman, “Visible electroluminescence from native SiO2 on n-type Si substrates,” J. Appl. Phys. 86(4), 2358–2360 (1999).
[CrossRef]

G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys. 78(3), 2006–2009 (1995).
[CrossRef]

S. Mridha and D. Basak, “Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction,” J. Appl. Phys. 101(8), 083102 (2007).
[CrossRef]

Mater. Chem. Phys.

K. Kim, M. Kim, and S. M. Cho, “Pulsed electrodeposition of palladium nanowire arrays using AAO template,” Mater. Chem. Phys. 96(2-3), 278–282 (2006).
[CrossRef]

Nanotechnology

W. Lee, K. Nielsch, and U. Gösele, “Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization,” Nanotechnology 18(47), 475713 (2007).
[CrossRef]

Solid-State Electron.

J. López-Villanueva, I. Melchor, F. Gámiz, J. Banqueri, and J. A. Jiménez-Tejada, “A model for the quantized accumulation layer in metal-insulator-semiconductor structures,” Solid-State Electron. 38(1), 203–210 (1995).
[CrossRef]

R. A. Ismail, W. K. Khalaf, and O. A. Abdulrazaq, “Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation,” Solid-State Electron. 51(6), 817–819 (2007).
[CrossRef]

Thin Solid Films

J. Wang, C. W. Wang, Y. Li, and W. M. Liu, “Optical constants of anodic aluminum oxide films formed in oxalic acid solution,” Thin Solid Films 516(21), 7689–7694 (2008).
[CrossRef]

Other

M. Oehme, J. Werner, E. Kasper, M. Jutzi and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89, 071117–1-071117–3 (2006).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Metrics