Abstract

Ta2O5/SiO2 dielectric multi-layer micro-mirror array (MMA) with 3μm mirror size and 6μm array period was fabricated on c-plane sapphire substrate. The MMA was subjected to 1200°C high temperature annealing and remained intact with high reflectance in contrast to the continuous multi-layer for which the layers have undergone severe damage by 1200°C annealing. Epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was applied to the MMA that was deposited on both sapphire and sapphire with 2.56μm GaN template. The MMA was fully embedded in the ELO GaN and remained intact. The result implies that our MMA is compatible to the high temperature growth environment of GaN and the MMA could be incorporated into the structure of the micro-LED array as a one to one micro backlight reflector, or as the patterned structure on the large area LED for controlling the output light.

© 2009 Optical Society of America

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2008 (1)

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

2005 (1)

2004 (2)

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

2003 (1)

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, "High extraction efficiency InGaN micro-ring light-emitting diodes," Appl. Phys. Lett. 83, 4483-4485 (2003).
[CrossRef]

2001 (2)

S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, "Polarization mode control of twodimensional photonic crystal laser by unit cell structure design," Science 293, 1123-1125 (2001).
[CrossRef] [PubMed]

H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays," Appl. Phys. Lett. 78, 1303-1305 (2001).
[CrossRef]

2000 (1)

S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN quantum well interconnected microdisk light emitting diodes," Appl. Phys. Lett. 77, 3236-3238 (2000).
[CrossRef]

1998 (2)

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

Altug, H.

Chocho, K.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

Choi, H. W.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, "High extraction efficiency InGaN micro-ring light-emitting diodes," Appl. Phys. Lett. 83, 4483-4485 (2003).
[CrossRef]

Chutinan, A.

S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, "Polarization mode control of twodimensional photonic crystal laser by unit cell structure design," Science 293, 1123-1125 (2001).
[CrossRef] [PubMed]

Craford, M. G.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

David, A.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

Dawson, M. D.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, "High extraction efficiency InGaN micro-ring light-emitting diodes," Appl. Phys. Lett. 83, 4483-4485 (2003).
[CrossRef]

DenBaars, S.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

Edwards, P. R.

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, "High extraction efficiency InGaN micro-ring light-emitting diodes," Appl. Phys. Lett. 83, 4483-4485 (2003).
[CrossRef]

Epler, J. E.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

Gardner, N. F.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

Girkin, J. M.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

Gu, E.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

Hu, E. L.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

Imada, M.

S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, "Polarization mode control of twodimensional photonic crystal laser by unit cell structure design," Science 293, 1123-1125 (2001).
[CrossRef] [PubMed]

Iwasa, N.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

Iza, M.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

Jiang, H. X.

H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays," Appl. Phys. Lett. 78, 1303-1305 (2001).
[CrossRef]

S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN quantum well interconnected microdisk light emitting diodes," Appl. Phys. Lett. 77, 3236-3238 (2000).
[CrossRef]

Jin, S. X.

H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays," Appl. Phys. Lett. 78, 1303-1305 (2001).
[CrossRef]

S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN quantum well interconnected microdisk light emitting diodes," Appl. Phys. Lett. 77, 3236-3238 (2000).
[CrossRef]

Kiyoku, H.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

Kozaki, T.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

Krames, M. R.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

Li, J.

H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays," Appl. Phys. Lett. 78, 1303-1305 (2001).
[CrossRef]

S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN quantum well interconnected microdisk light emitting diodes," Appl. Phys. Lett. 77, 3236-3238 (2000).
[CrossRef]

Lin, J. Y.

H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays," Appl. Phys. Lett. 78, 1303-1305 (2001).
[CrossRef]

S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN quantum well interconnected microdisk light emitting diodes," Appl. Phys. Lett. 77, 3236-3238 (2000).
[CrossRef]

Liu, C.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

Martin, R. W.

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, "High extraction efficiency InGaN micro-ring light-emitting diodes," Appl. Phys. Lett. 83, 4483-4485 (2003).
[CrossRef]

Matioli, E.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

Matsushita, T.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

McConnell, G.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

McGroddy, K.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

Mochizuki, M.

S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, "Polarization mode control of twodimensional photonic crystal laser by unit cell structure design," Science 293, 1123-1125 (2001).
[CrossRef] [PubMed]

Nagahama, S. I.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

Nakamura, S.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

Noda, S.

S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, "Polarization mode control of twodimensional photonic crystal laser by unit cell structure design," Science 293, 1123-1125 (2001).
[CrossRef] [PubMed]

Sano, M.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

Senoh, M.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

Shakya, J.

H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays," Appl. Phys. Lett. 78, 1303-1305 (2001).
[CrossRef]

Sigalas, M. M.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

Simmons, J. A.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

Speck, J. S.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

Sugimoto, Y.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

Umemoto, H.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

Vuckovic, J.

Watson, I. M.

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

Weisbuch, C.

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

Wendt, J. R.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

Wierer, J. J.

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

Yamada, T.

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

Yokoyama, M.

S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, "Polarization mode control of twodimensional photonic crystal laser by unit cell structure design," Science 293, 1123-1125 (2001).
[CrossRef] [PubMed]

Appl. Phys. Lett. (7)

S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, "InGaN/GaN quantum well interconnected microdisk light emitting diodes," Appl. Phys. Lett. 77, 3236-3238 (2000).
[CrossRef]

H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays," Appl. Phys. Lett. 78, 1303-1305 (2001).
[CrossRef]

H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, "High extraction efficiency InGaN micro-ring light-emitting diodes," Appl. Phys. Lett. 83, 4483-4485 (2003).
[CrossRef]

H. W. Choi, C. Liu, E. Gu, G. McConnell, J. M. Girkin, I. M. Watson, and M. D. Dawson, "GaN micro-lightemitting diode arrays with monolithically integrated sapphire microlenses," Appl. Phys. Lett. 84, 2253-2255 (2004).
[CrossRef]

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulationdoped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett. 72, 211-213 (1998).
[CrossRef]

K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes," Appl. Phys. Lett. 93, 103502 (2008).
[CrossRef]

J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885-3887 (2004).
[CrossRef]

J. Cryst. Growth (1)

S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Present status of InGaN/GaN/AlGaN-based laser diodes," J. Cryst. Growth 189/190, 820-825 (1998).
[CrossRef]

Opt. Lett. (1)

Science (1)

S. Noda, M. Yokoyama, M. Imada, A. Chutinan, and M. Mochizuki, "Polarization mode control of twodimensional photonic crystal laser by unit cell structure design," Science 293, 1123-1125 (2001).
[CrossRef] [PubMed]

Other (1)

M. D. Dawson and R. W. Martin, US patent 6563141B1, (2003).

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Figures (6)

Fig. 1.
Fig. 1.

SEM pictures of the top and the side views of the sample at different stages of the MMA fabrication process.

Fig. 2.
Fig. 2.

Relative orientation of the pattern. The hexagon of the array and the element are aligned with that of the c-plane sapphire.

Fig. 3.
Fig. 3.

SEM pictures of the continuous multi-layers. (a)(b) top view and (c) side view before annealing. (d)(e) top view and (f) side view after 1200°C annealing.

Fig. 4.
Fig. 4.

SEM pictures of the MMA. (a) top view and (b) side view before annealing. (c) top view and (d) side view after 1200°C annealing.

Fig. 5.
Fig. 5.

(a) Reflectance spectrum of the continuous multi-layers before annealing. (b) Reflectance scanning at 441.6 nm wavelength of the MMA before and after 1200°C annealing.

Fig. 6.
Fig. 6.

SEM pictures of the MMA on sapphire (a)-(c) and on sapphire with 2.56μm GaN template (d)-(f). (a)(b)(d)(e): the ELO process terminated half-way. (c)(f): the ELO process was completed.

Tables (1)

Tables Icon

Table 1. MOCVD process parameters

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