Abstract

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)0.51In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.

© 2009 OSA

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
    [CrossRef]
  2. S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
    [CrossRef]
  3. N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
    [CrossRef]
  4. A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
    [CrossRef]
  5. B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett. 33(22), 2719–2721 (2008).
    [CrossRef] [PubMed]
  6. J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).
  7. T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
    [CrossRef]
  8. M. Butkus, K. G. Wilcox, J. Rautiainen, O. G. Okhotnikov, S. S. Mikhrin, I. L. Krestnikov, A. R. Kovsh, M. Hoffmann, T. Südmeyer, U. Keller, and E. U. Rafailov, “High-power quantum-dot-based semiconductor disk laser,” Opt. Lett. 34(11), 1672–1674 (2009).
    [CrossRef] [PubMed]
  9. J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
    [CrossRef] [PubMed]
  10. A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
    [CrossRef]
  11. J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
    [CrossRef]

2009

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[CrossRef]

M. Butkus, K. G. Wilcox, J. Rautiainen, O. G. Okhotnikov, S. S. Mikhrin, I. L. Krestnikov, A. R. Kovsh, M. Hoffmann, T. Südmeyer, U. Keller, and E. U. Rafailov, “High-power quantum-dot-based semiconductor disk laser,” Opt. Lett. 34(11), 1672–1674 (2009).
[CrossRef] [PubMed]

2008

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett. 33(22), 2719–2721 (2008).
[CrossRef] [PubMed]

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

2007

A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
[CrossRef]

2005

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[CrossRef] [PubMed]

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

2004

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

1999

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Bellancourt, A.-R.

Bimberg, D.

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

Burns, D.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

Butkus, M.

Calvez, S.

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[CrossRef]

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[CrossRef] [PubMed]

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

Dawson, M. D.

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[CrossRef]

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[CrossRef] [PubMed]

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

Germann, T. D.

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

Gini, E.

Guina, M.

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[CrossRef]

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Hastie, J. E.

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[CrossRef]

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[CrossRef] [PubMed]

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

Hoffmann, M.

Hopkins, J. M.

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

Hopkins, J.-M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Houston, P. A.

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

Jeon, C. W.

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

Jouhti, T.

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

Keller, U.

Kemp, A. J.

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

Kovsh, A. R.

Krestnikov, I. L.

Krysa, A. B.

A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
[CrossRef]

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Laakso, A.

Leinonen, T.

Lester, L. F.

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

Lewis, G. M.

A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
[CrossRef]

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

Liew, S. L.

A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
[CrossRef]

Lin, J. C.

A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
[CrossRef]

Lutti, J.

A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
[CrossRef]

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

Lyytikäinen, J.

Maas, D. J. H. C.

Mikhrin, S. S.

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Okhotnikov, O.

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[CrossRef]

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

Okhotnikov, O. G.

Pessa, M.

J. E. Hastie, S. Calvez, M. D. Dawson, T. Leinonen, A. Laakso, J. Lyytikäinen, and M. Pessa, “High power CW red VECSEL with linearly polarized TEM00 output beam,” Opt. Express 13(1), 77–81 (2005).
[CrossRef] [PubMed]

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

Pohl, J.

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

Pohl, U. W.

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

Rafailov, E. U.

Rattunde, M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Rautiainen, J.

M. Butkus, K. G. Wilcox, J. Rautiainen, O. G. Okhotnikov, S. S. Mikhrin, I. L. Krestnikov, A. R. Kovsh, M. Hoffmann, T. Südmeyer, U. Keller, and E. U. Rafailov, “High-power quantum-dot-based semiconductor disk laser,” Opt. Lett. 34(11), 1672–1674 (2009).
[CrossRef] [PubMed]

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

Roberts, J. S.

A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
[CrossRef]

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

Rudin, B.

Rutz, A.

Schulz, N.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Smith, S. A.

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

Smowton, P. M.

A. B. Krysa, S. L. Liew, J. C. Lin, J. S. Roberts, J. Lutti, G. M. Lewis, and P. M. Smowton, “Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm,” J. Cryst. Growth 298, 663–666 (2007).
[CrossRef]

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and characteristics of high-power (> 0.5-W CW) diode- pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Strittmatter, A.

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. Okhotnikov, “Quantum-dot semiconductor disk lasers,” J. Cryst. Growth 310(23), 5182–5186 (2008).
[CrossRef]

Südmeyer, T.

Valentine, G. J.

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

Wagner, J.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[CrossRef]

Wilcox, K. G.

Xin, Y. C.

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

Electron. Lett.

J. Lutti, P. M. Smowton, G. M. Lewis, A. B. Krysa, J. S. Roberts, P. A. Houston, Y. C. Xin, and L. F. Lester, “740nm InP/GaInP quantum -dot laser with 190 A cm-2 room temperature threshold current density,” Electron. Lett. 298, 41 (2005).

J. M. Hopkins, S. A. Smith, C. W. Jeon, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “A 0.6W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30 (2004).
[CrossRef]

IEEE J. Quantum Electron.

A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

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Opt. Express

Opt. Lett.

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Figures (4)

Fig. 1
Fig. 1

Design of the SDL gain structure incorporating 7 x 3 layers of InP quantum dots within the resonant subcavity.

Fig. 2
Fig. 2

Room temperature photoluminescence of the gain region calibration growth (top) and room temperature reflectance (bold) and photoluminescence (dashed) measurements for all three samples from the SDL gain structure. Also shown are the respective free-running SDL emission spectra.

Fig. 3
Fig. 3

SDL emission spectra. a) Emission spectra of the free-running SDL incorporating gain structure samples A, B, and C. b) Tuning curve obtained with sample C by insertion and rotation of an intracavity birefringent filter in an all-HR mirror cavity. Inset: an example of the narrowed laser emission spectrum during tuning.

Fig. 4
Fig. 4

Power transfer measurements for the SDL incorporating each gain structure sample. A linear fit to the data as shown was used to calculate the threshold and slope efficiency before rollover. Output coupling was 0.2%.

Tables (2)

Tables Icon

Table 1 SDL gain structure composition

Tables Icon

Table 2 Summary of SDL characteristics using different gain structure samples

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