A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
L. Chrostowski, B. Faraji, W. Hofmann, M.-C. Amann, S. Wieczorek, and W. W. Chow,, “40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55μm VCSELs,” IEEE J. Quantum Electron. 13(5), 1200–1208 ( 2007).
[Crossref]
C.-H. Chang, L. Chrostowski, and C. J. Chang-Hasnain, “Injection locking of VCSELs,” IEEE J. Quantum Electron. 9(5), 1386–1393 ( 2003).
[Crossref]
L. Chrostowski, C.-H. Chang, and C. J. Chang-Hasnain, “Enhancement of Dynamic range in 1.55μm VCSELs using Injection Locking,” IEEE Photon. Technol. Lett. 15(4), 498–500 ( 2003).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
C. Laverdière, A. Fekecs, and M. Tetu, “A New Method for Measuring Time-Resolved Frequency Chirp of High Bit Rate Sources,” IEEE Photon. Technol. Lett. 15(3), 446–448 ( 2003).
[Crossref]
V. Annovazzi-Lodi, A. Scire, M. Sorel, and S. Donati, “Dynamic behavior and locking of a semiconductor laser subjected to external injection,” IEEE J. Quantum Electron. 34(12), 2350–2357 ( 1998).
[Crossref]
J. M. Liu, H. F. Chen, X. J. Meng, and T. B. Simpson, “Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking,” IEEE Photon. Technol. Lett. 9(10), 1325–1327 ( 1997).
[Crossref]
W. Schmid, C. Jung, B. Weigi, G. Reiner, R. Michalzik, and K. J. Ebeling, “Delayed self-heterodyne linewidth measurement of VCSELs,” IEEE Photon. Technol. Lett. 8(10), 1288–1290 ( 1996).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
L. Chrostowski, B. Faraji, W. Hofmann, M.-C. Amann, S. Wieczorek, and W. W. Chow,, “40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55μm VCSELs,” IEEE J. Quantum Electron. 13(5), 1200–1208 ( 2007).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
V. Annovazzi-Lodi, A. Scire, M. Sorel, and S. Donati, “Dynamic behavior and locking of a semiconductor laser subjected to external injection,” IEEE J. Quantum Electron. 34(12), 2350–2357 ( 1998).
[Crossref]
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
C.-H. Chang, L. Chrostowski, and C. J. Chang-Hasnain, “Injection locking of VCSELs,” IEEE J. Quantum Electron. 9(5), 1386–1393 ( 2003).
[Crossref]
L. Chrostowski, C.-H. Chang, and C. J. Chang-Hasnain, “Enhancement of Dynamic range in 1.55μm VCSELs using Injection Locking,” IEEE Photon. Technol. Lett. 15(4), 498–500 ( 2003).
[Crossref]
L. Chrostowski, C.-H. Chang, and C. J. Chang-Hasnain, “Enhancement of Dynamic range in 1.55μm VCSELs using Injection Locking,” IEEE Photon. Technol. Lett. 15(4), 498–500 ( 2003).
[Crossref]
C.-H. Chang, L. Chrostowski, and C. J. Chang-Hasnain, “Injection locking of VCSELs,” IEEE J. Quantum Electron. 9(5), 1386–1393 ( 2003).
[Crossref]
J. M. Liu, H. F. Chen, X. J. Meng, and T. B. Simpson, “Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking,” IEEE Photon. Technol. Lett. 9(10), 1325–1327 ( 1997).
[Crossref]
L. Chrostowski, B. Faraji, W. Hofmann, M.-C. Amann, S. Wieczorek, and W. W. Chow,, “40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55μm VCSELs,” IEEE J. Quantum Electron. 13(5), 1200–1208 ( 2007).
[Crossref]
L. Chrostowski, B. Faraji, W. Hofmann, M.-C. Amann, S. Wieczorek, and W. W. Chow,, “40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55μm VCSELs,” IEEE J. Quantum Electron. 13(5), 1200–1208 ( 2007).
[Crossref]
C.-H. Chang, L. Chrostowski, and C. J. Chang-Hasnain, “Injection locking of VCSELs,” IEEE J. Quantum Electron. 9(5), 1386–1393 ( 2003).
[Crossref]
L. Chrostowski, C.-H. Chang, and C. J. Chang-Hasnain, “Enhancement of Dynamic range in 1.55μm VCSELs using Injection Locking,” IEEE Photon. Technol. Lett. 15(4), 498–500 ( 2003).
[Crossref]
V. Annovazzi-Lodi, A. Scire, M. Sorel, and S. Donati, “Dynamic behavior and locking of a semiconductor laser subjected to external injection,” IEEE J. Quantum Electron. 34(12), 2350–2357 ( 1998).
[Crossref]
W. Schmid, C. Jung, B. Weigi, G. Reiner, R. Michalzik, and K. J. Ebeling, “Delayed self-heterodyne linewidth measurement of VCSELs,” IEEE Photon. Technol. Lett. 8(10), 1288–1290 ( 1996).
[Crossref]
L. Chrostowski, B. Faraji, W. Hofmann, M.-C. Amann, S. Wieczorek, and W. W. Chow,, “40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55μm VCSELs,” IEEE J. Quantum Electron. 13(5), 1200–1208 ( 2007).
[Crossref]
C. Laverdière, A. Fekecs, and M. Tetu, “A New Method for Measuring Time-Resolved Frequency Chirp of High Bit Rate Sources,” IEEE Photon. Technol. Lett. 15(3), 446–448 ( 2003).
[Crossref]
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
L. Chrostowski, B. Faraji, W. Hofmann, M.-C. Amann, S. Wieczorek, and W. W. Chow,, “40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55μm VCSELs,” IEEE J. Quantum Electron. 13(5), 1200–1208 ( 2007).
[Crossref]
W. Schmid, C. Jung, B. Weigi, G. Reiner, R. Michalzik, and K. J. Ebeling, “Delayed self-heterodyne linewidth measurement of VCSELs,” IEEE Photon. Technol. Lett. 8(10), 1288–1290 ( 1996).
[Crossref]
C. Laverdière, A. Fekecs, and M. Tetu, “A New Method for Measuring Time-Resolved Frequency Chirp of High Bit Rate Sources,” IEEE Photon. Technol. Lett. 15(3), 446–448 ( 2003).
[Crossref]
J. M. Liu, H. F. Chen, X. J. Meng, and T. B. Simpson, “Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking,” IEEE Photon. Technol. Lett. 9(10), 1325–1327 ( 1997).
[Crossref]
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
J. M. Liu, H. F. Chen, X. J. Meng, and T. B. Simpson, “Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking,” IEEE Photon. Technol. Lett. 9(10), 1325–1327 ( 1997).
[Crossref]
W. Schmid, C. Jung, B. Weigi, G. Reiner, R. Michalzik, and K. J. Ebeling, “Delayed self-heterodyne linewidth measurement of VCSELs,” IEEE Photon. Technol. Lett. 8(10), 1288–1290 ( 1996).
[Crossref]
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
W. Schmid, C. Jung, B. Weigi, G. Reiner, R. Michalzik, and K. J. Ebeling, “Delayed self-heterodyne linewidth measurement of VCSELs,” IEEE Photon. Technol. Lett. 8(10), 1288–1290 ( 1996).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
W. Schmid, C. Jung, B. Weigi, G. Reiner, R. Michalzik, and K. J. Ebeling, “Delayed self-heterodyne linewidth measurement of VCSELs,” IEEE Photon. Technol. Lett. 8(10), 1288–1290 ( 1996).
[Crossref]
V. Annovazzi-Lodi, A. Scire, M. Sorel, and S. Donati, “Dynamic behavior and locking of a semiconductor laser subjected to external injection,” IEEE J. Quantum Electron. 34(12), 2350–2357 ( 1998).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
J. M. Liu, H. F. Chen, X. J. Meng, and T. B. Simpson, “Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking,” IEEE Photon. Technol. Lett. 9(10), 1325–1327 ( 1997).
[Crossref]
V. Annovazzi-Lodi, A. Scire, M. Sorel, and S. Donati, “Dynamic behavior and locking of a semiconductor laser subjected to external injection,” IEEE J. Quantum Electron. 34(12), 2350–2357 ( 1998).
[Crossref]
C. Laverdière, A. Fekecs, and M. Tetu, “A New Method for Measuring Time-Resolved Frequency Chirp of High Bit Rate Sources,” IEEE Photon. Technol. Lett. 15(3), 446–448 ( 2003).
[Crossref]
W. Schmid, C. Jung, B. Weigi, G. Reiner, R. Michalzik, and K. J. Ebeling, “Delayed self-heterodyne linewidth measurement of VCSELs,” IEEE Photon. Technol. Lett. 8(10), 1288–1290 ( 1996).
[Crossref]
L. Chrostowski, B. Faraji, W. Hofmann, M.-C. Amann, S. Wieczorek, and W. W. Chow,, “40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55μm VCSELs,” IEEE J. Quantum Electron. 13(5), 1200–1208 ( 2007).
[Crossref]
M. Ortsiefer, W. Hofmann, E. Ronneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Bohm, M. Martinelli, and M. C. Amann, “High speed 1.3 μm VCSELs for 12.5 Gbit/s optical interconnects,” Electron. Lett. 44(16), 974–975 ( 2008).
[Crossref]
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Bohm, M. Maute, P. Meissner, and M.-C. Amann, “Linewidth of InP-based 1.55 lm VCSELs with buried tunnel junction,” Electron. Lett. 39(24), 1728 ( 2003).
[Crossref]
V. Annovazzi-Lodi, A. Scire, M. Sorel, and S. Donati, “Dynamic behavior and locking of a semiconductor laser subjected to external injection,” IEEE J. Quantum Electron. 34(12), 2350–2357 ( 1998).
[Crossref]
L. Chrostowski, B. Faraji, W. Hofmann, M.-C. Amann, S. Wieczorek, and W. W. Chow,, “40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55μm VCSELs,” IEEE J. Quantum Electron. 13(5), 1200–1208 ( 2007).
[Crossref]
C.-H. Chang, L. Chrostowski, and C. J. Chang-Hasnain, “Injection locking of VCSELs,” IEEE J. Quantum Electron. 9(5), 1386–1393 ( 2003).
[Crossref]
L. Chrostowski, C.-H. Chang, and C. J. Chang-Hasnain, “Enhancement of Dynamic range in 1.55μm VCSELs using Injection Locking,” IEEE Photon. Technol. Lett. 15(4), 498–500 ( 2003).
[Crossref]
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli, “1.3 μm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks,” IEEE Photon. Technol. Lett. 21(12), 778–780 ( 2009).
[Crossref]
J. M. Liu, H. F. Chen, X. J. Meng, and T. B. Simpson, “Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking,” IEEE Photon. Technol. Lett. 9(10), 1325–1327 ( 1997).
[Crossref]
C. Laverdière, A. Fekecs, and M. Tetu, “A New Method for Measuring Time-Resolved Frequency Chirp of High Bit Rate Sources,” IEEE Photon. Technol. Lett. 15(3), 446–448 ( 2003).
[Crossref]
W. Schmid, C. Jung, B. Weigi, G. Reiner, R. Michalzik, and K. J. Ebeling, “Delayed self-heterodyne linewidth measurement of VCSELs,” IEEE Photon. Technol. Lett. 8(10), 1288–1290 ( 1996).
[Crossref]
Dennis Derickson, Fiber Optic Test and Measurement (Prentice Hall,).
M. Ortsiefer, M. Grau, J. Rosskopf, R. Shau, K. Windhorn, E. Rönneberg, G. Böhm, W. Hofmann, O. Dier, and M.-C. Amann, “InP-based VCSELs with Buried Tunnel Junction for Optical Communication and Sensing in the 1.3-2.3 μm Wavelength Range,” in Proceedings of IEEE Semiconductor Laser Conference, (Waikoloa, HI, USA, 2006), pp. 113–114.
B. Zhang, X. Zhao, L. Christen, D. Parekh, W. Hofmann, and C. Ming, Wu, M. C. Amann, C.J. Chang-Hasnain, and A. E. Willner, “Adjustable Chirp Injection-Locked 1.55μm VCSELs for Enhanced Chromatic Dispersion Compensation at 10 Gb/s,” in Proceedings of IEEE Conference on Optical Fiber Communication (San Diego Convention Center, 2008).
D. Parekh, and X. Bo Zhang, Zhao, Y. Yue, W. Hofmann, M.C. Amann, A.E. Willner and C.J. Chang-Hasnain, “90-km single-mode fiber transmission of 10-Gb/s multimode VCSELs under optical injection locking,” in Proceedings of IEEE Conference on Optical Fiber Communication (San Diego Convention Center, 2009).