Abstract

The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.

© 2009 OSA

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  1. K. J. Williams, L. T. Nichols, and R. D. Esman, “Photodetector Nonlinearity on a High-Dynamic Range 3 GHz Fiber Optic Link,” J. Lightwave Technol. 16(2), 192–199 (1998).
    [CrossRef]
  2. K. J. Williams, D. A. Tulchinsky, and A. Hastings, “High-power and high-linearity photodiodes”, 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, (Institute of Electrical and Electronics Engineers, Newport Beach, California, 2008), pp.290–291.
  3. K. Williams, R. Esman, and M. Dagenais, “Nonlinearities in p-i-n microwave photodetectors,” J. Lightwave Technol. 14(1), 84–96 (1996).
    [CrossRef]
  4. A. Joshi, S. Datta, and D. Becker, “GRIN Lens Coupled Top-Illuminated Highly Linear InGaAs Photodiodes,” IEEE Photon. Technol. Lett. 20(17), 1500–1502 (2008).
    [CrossRef]
  5. H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
    [CrossRef]
  6. M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
    [CrossRef]
  7. T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
    [CrossRef]
  8. A. Beling, H. Pan, C. Hao, and J. C. Campbell, “Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode,” IEEE Photon. Technol. Lett. 20(14), 1219–1221 (2008).
    [CrossRef]
  9. A. Beling, H. Pan, H. Chen, and J. C. Campbell, “Measurement and modelling of high-linearity partially depleted absorber photodiode,” Electron. Lett. 44(24), 1419–1420 (2008).
    [CrossRef]
  10. H. Pan, A. Beling, H. Chen, J. C. Campbell, and P. D. Yoder, “The Influence of Nonlinear Capacitance on the Linearity of a Modified Uni-Traveling Carrier Photodiode,” 2008 International Topical Meeting on Microwave Photonics, (Institute of Electrical and Electronics Engineers, Gold Coast, Australia, 2008), pp. 82–85.
  11. Z. Griffith, Y. M. Kim, M. Dahlstrom, A.C. Gossard, and M. J. W. Rodwell, “InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz,” IEEE Electron Device Lett. 25, 675–677 (2004).
    [CrossRef]
  12. H. Pan, A. Beling, H. Chen, and J. C. Campbell, “Characterization and Optimization of High-Power InGaAs/InP Photodiodes,” Opt. Quantum Electron. 40(1), 41–46 (2008).
    [CrossRef]
  13. M. N. Draa, J. Ren, D. C. Scott, W. S. Chang, and P. K. Yu, “Three laser two-tone setup for measurement of photodiode intercept points,” Opt. Express 16(16), 12108–12113 (2008).
    [CrossRef] [PubMed]
  14. A. Ramaswamy, J. Klamkin, N. Nunoya, L. A. Johansson, L. A. Coldren, and J. E. Bowers, “Three-tone characterization of high-linearity waveguide uni-traveling-carrier photodiodes,” 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, (Institute of Electrical and Electronics Engineers, Newport Beach, California, 2008), pp. 286–7.
  15. M. Dentan and B. de Cremoux, “Numerical Simulation of the Nonlinear Response of a p-i-n photodiode Under High Illumination,” J. Lightwave Technol. 8(8), 1137–1144 (1990).
    [CrossRef]
  16. T. H. Stievater and K. J. Williams, “Thermally induced nonlinearities in high-speed p-i-n photodetectors,” IEEE Photonics Technol. Lett. 16(1), 239–241 (2004).
  17. H. Pan, A. Beling, H. Chen, and J. C. Campbell, “The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements,” IEEE J. Quantum Electron. 45(3), 273–277 (2009).
    [CrossRef]

2009 (1)

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements,” IEEE J. Quantum Electron. 45(3), 273–277 (2009).
[CrossRef]

2008 (6)

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “Characterization and Optimization of High-Power InGaAs/InP Photodiodes,” Opt. Quantum Electron. 40(1), 41–46 (2008).
[CrossRef]

M. N. Draa, J. Ren, D. C. Scott, W. S. Chang, and P. K. Yu, “Three laser two-tone setup for measurement of photodiode intercept points,” Opt. Express 16(16), 12108–12113 (2008).
[CrossRef] [PubMed]

A. Joshi, S. Datta, and D. Becker, “GRIN Lens Coupled Top-Illuminated Highly Linear InGaAs Photodiodes,” IEEE Photon. Technol. Lett. 20(17), 1500–1502 (2008).
[CrossRef]

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

A. Beling, H. Pan, C. Hao, and J. C. Campbell, “Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode,” IEEE Photon. Technol. Lett. 20(14), 1219–1221 (2008).
[CrossRef]

A. Beling, H. Pan, H. Chen, and J. C. Campbell, “Measurement and modelling of high-linearity partially depleted absorber photodiode,” Electron. Lett. 44(24), 1419–1420 (2008).
[CrossRef]

2004 (2)

Z. Griffith, Y. M. Kim, M. Dahlstrom, A.C. Gossard, and M. J. W. Rodwell, “InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz,” IEEE Electron Device Lett. 25, 675–677 (2004).
[CrossRef]

T. H. Stievater and K. J. Williams, “Thermally induced nonlinearities in high-speed p-i-n photodetectors,” IEEE Photonics Technol. Lett. 16(1), 239–241 (2004).

2002 (1)

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

2000 (1)

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
[CrossRef]

1998 (1)

1996 (1)

K. Williams, R. Esman, and M. Dagenais, “Nonlinearities in p-i-n microwave photodetectors,” J. Lightwave Technol. 14(1), 84–96 (1996).
[CrossRef]

1990 (1)

M. Dentan and B. de Cremoux, “Numerical Simulation of the Nonlinear Response of a p-i-n photodiode Under High Illumination,” J. Lightwave Technol. 8(8), 1137–1144 (1990).
[CrossRef]

Achouche, M.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Becker, D.

A. Joshi, S. Datta, and D. Becker, “GRIN Lens Coupled Top-Illuminated Highly Linear InGaAs Photodiodes,” IEEE Photon. Technol. Lett. 20(17), 1500–1502 (2008).
[CrossRef]

Beling, A.

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements,” IEEE J. Quantum Electron. 45(3), 273–277 (2009).
[CrossRef]

A. Beling, H. Pan, H. Chen, and J. C. Campbell, “Measurement and modelling of high-linearity partially depleted absorber photodiode,” Electron. Lett. 44(24), 1419–1420 (2008).
[CrossRef]

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “Characterization and Optimization of High-Power InGaAs/InP Photodiodes,” Opt. Quantum Electron. 40(1), 41–46 (2008).
[CrossRef]

A. Beling, H. Pan, C. Hao, and J. C. Campbell, “Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode,” IEEE Photon. Technol. Lett. 20(14), 1219–1221 (2008).
[CrossRef]

Bernard, S.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Campbell, J. C.

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements,” IEEE J. Quantum Electron. 45(3), 273–277 (2009).
[CrossRef]

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “Characterization and Optimization of High-Power InGaAs/InP Photodiodes,” Opt. Quantum Electron. 40(1), 41–46 (2008).
[CrossRef]

A. Beling, H. Pan, H. Chen, and J. C. Campbell, “Measurement and modelling of high-linearity partially depleted absorber photodiode,” Electron. Lett. 44(24), 1419–1420 (2008).
[CrossRef]

A. Beling, H. Pan, C. Hao, and J. C. Campbell, “Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode,” IEEE Photon. Technol. Lett. 20(14), 1219–1221 (2008).
[CrossRef]

Carpentier, D.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Chang, W. S.

Chen, H.

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements,” IEEE J. Quantum Electron. 45(3), 273–277 (2009).
[CrossRef]

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “Characterization and Optimization of High-Power InGaAs/InP Photodiodes,” Opt. Quantum Electron. 40(1), 41–46 (2008).
[CrossRef]

A. Beling, H. Pan, H. Chen, and J. C. Campbell, “Measurement and modelling of high-linearity partially depleted absorber photodiode,” Electron. Lett. 44(24), 1419–1420 (2008).
[CrossRef]

Chtioui, M.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Dagenais, M.

K. Williams, R. Esman, and M. Dagenais, “Nonlinearities in p-i-n microwave photodetectors,” J. Lightwave Technol. 14(1), 84–96 (1996).
[CrossRef]

Dahlstrom, M.

Z. Griffith, Y. M. Kim, M. Dahlstrom, A.C. Gossard, and M. J. W. Rodwell, “InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz,” IEEE Electron Device Lett. 25, 675–677 (2004).
[CrossRef]

Datta, S.

A. Joshi, S. Datta, and D. Becker, “GRIN Lens Coupled Top-Illuminated Highly Linear InGaAs Photodiodes,” IEEE Photon. Technol. Lett. 20(17), 1500–1502 (2008).
[CrossRef]

de Cremoux, B.

M. Dentan and B. de Cremoux, “Numerical Simulation of the Nonlinear Response of a p-i-n photodiode Under High Illumination,” J. Lightwave Technol. 8(8), 1137–1144 (1990).
[CrossRef]

Dentan, M.

M. Dentan and B. de Cremoux, “Numerical Simulation of the Nonlinear Response of a p-i-n photodiode Under High Illumination,” J. Lightwave Technol. 8(8), 1137–1144 (1990).
[CrossRef]

Doi, Y.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Draa, M. N.

Enard, A.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Esman, R.

K. Williams, R. Esman, and M. Dagenais, “Nonlinearities in p-i-n microwave photodetectors,” J. Lightwave Technol. 14(1), 84–96 (1996).
[CrossRef]

Esman, R. D.

Fukano, H.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Gossard, A.C.

Z. Griffith, Y. M. Kim, M. Dahlstrom, A.C. Gossard, and M. J. W. Rodwell, “InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz,” IEEE Electron Device Lett. 25, 675–677 (2004).
[CrossRef]

Griffith, Z.

Z. Griffith, Y. M. Kim, M. Dahlstrom, A.C. Gossard, and M. J. W. Rodwell, “InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz,” IEEE Electron Device Lett. 25, 675–677 (2004).
[CrossRef]

Hao, C.

A. Beling, H. Pan, C. Hao, and J. C. Campbell, “Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode,” IEEE Photon. Technol. Lett. 20(14), 1219–1221 (2008).
[CrossRef]

Ishibashi, T.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Jiang, H.

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
[CrossRef]

Joshi, A.

A. Joshi, S. Datta, and D. Becker, “GRIN Lens Coupled Top-Illuminated Highly Linear InGaAs Photodiodes,” IEEE Photon. Technol. Lett. 20(17), 1500–1502 (2008).
[CrossRef]

Kim, Y. M.

Z. Griffith, Y. M. Kim, M. Dahlstrom, A.C. Gossard, and M. J. W. Rodwell, “InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz,” IEEE Electron Device Lett. 25, 675–677 (2004).
[CrossRef]

Lelarge, F.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Li, G. L.

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
[CrossRef]

Muramoto, Y.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Nichols, L. T.

Ohno, T.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Pan, H.

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements,” IEEE J. Quantum Electron. 45(3), 273–277 (2009).
[CrossRef]

A. Beling, H. Pan, H. Chen, and J. C. Campbell, “Measurement and modelling of high-linearity partially depleted absorber photodiode,” Electron. Lett. 44(24), 1419–1420 (2008).
[CrossRef]

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “Characterization and Optimization of High-Power InGaAs/InP Photodiodes,” Opt. Quantum Electron. 40(1), 41–46 (2008).
[CrossRef]

A. Beling, H. Pan, C. Hao, and J. C. Campbell, “Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode,” IEEE Photon. Technol. Lett. 20(14), 1219–1221 (2008).
[CrossRef]

Pommereau, F.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Ren, J.

Rodwell, M. J. W.

Z. Griffith, Y. M. Kim, M. Dahlstrom, A.C. Gossard, and M. J. W. Rodwell, “InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz,” IEEE Electron Device Lett. 25, 675–677 (2004).
[CrossRef]

Rousseau, B.

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

Scott, D. C.

M. N. Draa, J. Ren, D. C. Scott, W. S. Chang, and P. K. Yu, “Three laser two-tone setup for measurement of photodiode intercept points,” Opt. Express 16(16), 12108–12113 (2008).
[CrossRef] [PubMed]

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
[CrossRef]

Shin, D. S.

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
[CrossRef]

Stievater, T. H.

T. H. Stievater and K. J. Williams, “Thermally induced nonlinearities in high-speed p-i-n photodetectors,” IEEE Photonics Technol. Lett. 16(1), 239–241 (2004).

Vang, T. A.

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
[CrossRef]

Williams, K.

K. Williams, R. Esman, and M. Dagenais, “Nonlinearities in p-i-n microwave photodetectors,” J. Lightwave Technol. 14(1), 84–96 (1996).
[CrossRef]

Williams, K. J.

T. H. Stievater and K. J. Williams, “Thermally induced nonlinearities in high-speed p-i-n photodetectors,” IEEE Photonics Technol. Lett. 16(1), 239–241 (2004).

K. J. Williams, L. T. Nichols, and R. D. Esman, “Photodetector Nonlinearity on a High-Dynamic Range 3 GHz Fiber Optic Link,” J. Lightwave Technol. 16(2), 192–199 (1998).
[CrossRef]

Yoshimatsu, T.

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

Yu, P. K.

Yu, P. K. L.

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
[CrossRef]

Electron. Lett. (1)

A. Beling, H. Pan, H. Chen, and J. C. Campbell, “Measurement and modelling of high-linearity partially depleted absorber photodiode,” Electron. Lett. 44(24), 1419–1420 (2008).
[CrossRef]

IEEE (1)

T. H. Stievater and K. J. Williams, “Thermally induced nonlinearities in high-speed p-i-n photodetectors,” IEEE Photonics Technol. Lett. 16(1), 239–241 (2004).

IEEE Electron Device Lett. (1)

Z. Griffith, Y. M. Kim, M. Dahlstrom, A.C. Gossard, and M. J. W. Rodwell, “InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz,” IEEE Electron Device Lett. 25, 675–677 (2004).
[CrossRef]

IEEE J. Quantum Electron. (1)

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements,” IEEE J. Quantum Electron. 45(3), 273–277 (2009).
[CrossRef]

IEEE Photon. Technol. Lett. (5)

A. Joshi, S. Datta, and D. Becker, “GRIN Lens Coupled Top-Illuminated Highly Linear InGaAs Photodiodes,” IEEE Photon. Technol. Lett. 20(17), 1500–1502 (2008).
[CrossRef]

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, and P. K. L. Yu, “The Frequency Behavior of the Third-Order Intercept Point in a Waveguide photodiode,” IEEE Photon. Technol. Lett. 12(5), 540–542 (2000).
[CrossRef]

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-Power High-Linearity Uni-Traveling-Carrier photodiodes for Analog Photonic Links,” IEEE Photon. Technol. Lett. 20(3), 202–204 (2008).
[CrossRef]

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, and Y. Doi, “Measurement of intermodulation distortion in a unitravelingcarrier refracting-facet photodiode and a p–i–n refracting-facet photodiode,” IEEE Photon. Technol. Lett. 14(3), 375–377 (2002).
[CrossRef]

A. Beling, H. Pan, C. Hao, and J. C. Campbell, “Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode,” IEEE Photon. Technol. Lett. 20(14), 1219–1221 (2008).
[CrossRef]

J. Lightwave Technol. (3)

K. J. Williams, L. T. Nichols, and R. D. Esman, “Photodetector Nonlinearity on a High-Dynamic Range 3 GHz Fiber Optic Link,” J. Lightwave Technol. 16(2), 192–199 (1998).
[CrossRef]

K. Williams, R. Esman, and M. Dagenais, “Nonlinearities in p-i-n microwave photodetectors,” J. Lightwave Technol. 14(1), 84–96 (1996).
[CrossRef]

M. Dentan and B. de Cremoux, “Numerical Simulation of the Nonlinear Response of a p-i-n photodiode Under High Illumination,” J. Lightwave Technol. 8(8), 1137–1144 (1990).
[CrossRef]

Opt. Express (1)

Opt. Quantum Electron. (1)

H. Pan, A. Beling, H. Chen, and J. C. Campbell, “Characterization and Optimization of High-Power InGaAs/InP Photodiodes,” Opt. Quantum Electron. 40(1), 41–46 (2008).
[CrossRef]

Other (3)

A. Ramaswamy, J. Klamkin, N. Nunoya, L. A. Johansson, L. A. Coldren, and J. E. Bowers, “Three-tone characterization of high-linearity waveguide uni-traveling-carrier photodiodes,” 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, (Institute of Electrical and Electronics Engineers, Newport Beach, California, 2008), pp. 286–7.

K. J. Williams, D. A. Tulchinsky, and A. Hastings, “High-power and high-linearity photodiodes”, 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, (Institute of Electrical and Electronics Engineers, Newport Beach, California, 2008), pp.290–291.

H. Pan, A. Beling, H. Chen, J. C. Campbell, and P. D. Yoder, “The Influence of Nonlinear Capacitance on the Linearity of a Modified Uni-Traveling Carrier Photodiode,” 2008 International Topical Meeting on Microwave Photonics, (Institute of Electrical and Electronics Engineers, Gold Coast, Australia, 2008), pp. 82–85.

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Figures (4)

Fig. 1
Fig. 1

Schematic cross section of InGaAs–InP HD-MUTC photodiode.

Fig. 2
Fig. 2

Measured photodiode capacitance density for CC-MUTC and HD-MUTC photodiodes. Inset: Relative responsivity for CC-MUTC and HD-MUTC photodiodes.

Fig. 3
Fig. 3

OIP3 of the HD-MUTC photodiode versus photocurrent at 5 V, 7 V and 10 V reverse bias. Inset: at 33 mA and 10 V, the power of IMD3 versus fundamental power showing a good slope of 3 and an extracted OIP3 of 55 dBm

Fig. 4
Fig. 4

OIP3 of CC-MUTC photodiode at 50 mA of photocurrent and 7 V reverse bias, and HD-MUTC at 34 mA of photocurrent and 10 V reverse bias. Dashed line: calculated OIP3 of CC-MUTC photodiode based on C(V); Dotted line: calculated OIP3 of HD-MUTC based on C(V).

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