Abstract

A new flexible pump source, the optically-pumped semiconductor disk laser (SDL), for the Cr2+:ZnSe laser is reported. The SDL provides up to 6W output power at a free running central wavelength of 1.98μm. The Cr2+:ZnSe laser operated at an output power of 1.8W and a slope efficiency of ~50% with respect to absorbed pump power whilst maintaining a low output intensity noise figure of <0.14% RMS. The system required no optical isolation even under the situation of significant optical feedback.

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  1. L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).
  2. U. Demirbas and A. Sennaroglu, “Intracavity-pumped Cr2+: ZnSe laser with ultrabroad tuning range between 1880 and 3100 nm,” Opt. Lett. 31(15), 2293–2295 (2006).
    [PubMed]
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  4. I. T. Sorokina, and E. Sorokin, “Chirped-Mirror Dispersion Controlled Femtosecond Cr:ZnSe Laser,” Advanced Solid-State Photonics, 2007.
  5. S. B. Mirov, V. V. Fedorov, I. S. Moskalev, D. V. Martyshkin and C. Kim, “Progress in Cr2+ and Fe2+ dopded Mid-IR Laser Materials,” Laser Photonics Rev., DOI 10.1002/Ipor.200810076, 2009.
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  7. M. Mond, D. Albrecht, E. Heumann, G. Huber, S. Kück, V. I. Levchenko, V. N. Yakimovich, V. G. Shcherbitsky, V. E. Kisel, N. V. Kuleshov, M. Rattunde, J. Schmitz, R. Kiefer, and J. Wagner, “1.9µm and 2.0µm laser diode pumping of Cr2+:ZnSe and Cr2+:CdMnTe,” Opt. Lett. 27(12), 1034–1036 (2002).
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  9. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).
  10. N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
  11. S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev., DIO 10.1002, 2009.
  12. G. Baili, F. Bretenaker, M. Alouini, L. Morvan, D. Dolfi, and I. Sagnes, “Experimental Investigation and Analytical Modeling of Excess Intensity Noise in Semiconductor Class-A Lasers,” J. Lightwave Technol. 26(8), 952–961 (2008).
  13. J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008).
    [PubMed]
  14. Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).
  15. J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).
  16. J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).
  17. A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).
  18. L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).
  19. N. Hempler, J. M. Hopkins, and M. Rattunde, “Tuning and brightness optimisation of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm,” European Conference on Lasers and Electro-Optics, CB7.3, 2009.
  20. D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20(3), 277 (1966).
  21. J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).
  22. P. Černý, G. J. Valentine, and D. Burns, “Actively stabilised diode pumped Tm:YAIO laser,” Electron. Lett. 40(17), 1061–1063 (2004).

2008 (4)

N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).

G. Baili, F. Bretenaker, M. Alouini, L. Morvan, D. Dolfi, and I. Sagnes, “Experimental Investigation and Analytical Modeling of Excess Intensity Noise in Semiconductor Class-A Lasers,” J. Lightwave Technol. 26(8), 952–961 (2008).

J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008).
[PubMed]

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

2007 (2)

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

2006 (1)

2004 (2)

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

P. Černý, G. J. Valentine, and D. Burns, “Actively stabilised diode pumped Tm:YAIO laser,” Electron. Lett. 40(17), 1061–1063 (2004).

2002 (2)

2001 (1)

2000 (1)

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).

1997 (2)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).

R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).

1996 (1)

L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).

1988 (1)

J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

1966 (1)

D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20(3), 277 (1966).

Albrecht, D.

Alouini, M.

Badikov, V.

Baili, G.

Bauer, D.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Beach, R. J.

R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).

Bretenaker, F.

Burns, D.

N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).

J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008).
[PubMed]

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

P. Černý, G. J. Valentine, and D. Burns, “Actively stabilised diode pumped Tm:YAIO laser,” Electron. Lett. 40(17), 1061–1063 (2004).

Caird, J. A.

J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

Calvez, S.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

Caprara, A. L.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Cerný, P.

P. Černý, G. J. Valentine, and D. Burns, “Actively stabilised diode pumped Tm:YAIO laser,” Electron. Lett. 40(17), 1061–1063 (2004).

Chase, L. L.

J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

Chilla, J.

J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

Chilla, J. R.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Clay, R. A.

D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20(3), 277 (1966).

Dawson, M. D.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

DeLoach, L. D.

L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).

Demirbas, U.

Di Lieto, A.

Dolfi, D.

Fedorov, V.

Findlay, D.

D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20(3), 277 (1966).

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).

Hempler, N.

Heumann, E.

Hopkins, J. M.

J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008).
[PubMed]

N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

Huber, G.

Hunziker, L. E.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Ihli, C.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Jeon, C. W.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

Jouhti, T.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

Kemp, A. J.

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

Kiefer, R.

Kisel, V. E.

Köhler, K.

Krupke, W. F.

R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).

L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).

J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

Kück, S.

Kuleshov, N. V.

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).

Levchenko, V. I.

Liau, Z. L.

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).

Maclean, A. J.

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

Mahnke, G. J.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Manz, C.

Mirov, S.

Mond, M.

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).

Morvan, L.

Page, R. H.

I. T. Sorokina, E. Sorokin, A. Di Lieto, M. Tonelli, R. H. Page, and K. I. Schaffers, “Efficient broadly tunable continuous-wave Cr2+: ZnSe laser,” J. Opt. Soc. Am. B 18(7), 926–930 (2001).

R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).

L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).

Panyutin, V.

Payne, S. A.

R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).

L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).

J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

Pessa, M.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

Ramponi, A. J.

J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

Rattunde, M.

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).

J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008).
[PubMed]

M. Mond, D. Albrecht, E. Heumann, G. Huber, S. Kück, V. I. Levchenko, V. N. Yakimovich, V. G. Shcherbitsky, V. E. Kisel, N. V. Kuleshov, M. Rattunde, J. Schmitz, R. Kiefer, and J. Wagner, “1.9µm and 2.0µm laser diode pumping of Cr2+:ZnSe and Cr2+:CdMnTe,” Opt. Lett. 27(12), 1034–1036 (2002).

Rebut, M.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Reed, M.

J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

Reed, M. K.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Rösener, B.

Sagnes, I.

Schaffers, K. I.

Schmitz, J.

Schulz, N.

N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).

J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008).
[PubMed]

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

Sennaroglu, A.

Shcherbitsky, V. G.

Shu, Q. Z.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

Skidmore, J. A.

R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).

Smith, S. A.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

Sorokin, E.

Sorokina, I. T.

Spinelli, L.

J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).

Staver, P. R.

J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

Sun, H. D.

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

Tonelli, M.

Valentine, G. J.

P. Černý, G. J. Valentine, and D. Burns, “Actively stabilised diode pumped Tm:YAIO laser,” Electron. Lett. 40(17), 1061–1063 (2004).

Wagner, J.

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).

J. M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, “High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm,” Opt. Lett. 33(2), 201–203 (2008).
[PubMed]

M. Mond, D. Albrecht, E. Heumann, G. Huber, S. Kück, V. I. Levchenko, V. N. Yakimovich, V. G. Shcherbitsky, V. E. Kisel, N. V. Kuleshov, M. Rattunde, J. Schmitz, R. Kiefer, and J. Wagner, “1.9µm and 2.0µm laser diode pumping of Cr2+:ZnSe and Cr2+:CdMnTe,” Opt. Lett. 27(12), 1034–1036 (2002).

Weiss, E.

J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

Weiss, E. S.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Wilke, G. D.

L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).

Yakimovich, V. N.

Zhou, H. L.

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

Adv. Solid-State Lasers (1)

R. H. Page, J. A. Skidmore, K. I. Schaffers, R. J. Beach, S. A. Payne, and W. F. Krupke, “Demonstration of diode-pumped and grating tuned ZnSe:Cr2+ lasers,” Adv. Solid-State Lasers 10, 208–210 (1997).

Appl. Phys. Lett. (1)

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).

Electron. Lett. (2)

J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32µm,” Electron. Lett. 40(1), 30–31 (2004).

P. Černý, G. J. Valentine, and D. Burns, “Actively stabilised diode pumped Tm:YAIO laser,” Electron. Lett. 40(17), 1061–1063 (2004).

IEEE J. Quantum Eelectron. (3)

J. A. Caird, S. A. Payne, P. R. Staver, A. J. Ramponi, L. L. Chase, and W. F. Krupke, “Quantum Electronic-Properties of the Na3Ga2Li3F12:Cr3+ Laser,” IEEE J. Quantum Eelectron. 24(6), 1077–1099 (1988).

A. J. Kemp, J. M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3µm semiconductor disk lasers: A finite element analysis,” IEEE J. Quantum Eelectron. 44(2), 125–135 (2008).

L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, “Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media,” IEEE J. Quantum Eelectron. 32(6), 885–895 (1996).

IEEE Photonic Tech. Lett. (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photonic Tech. Lett. 9(8), 1063–1065 (1997).

J. Lightwave Technol. (1)

J. Opt. Soc. Am. B (1)

Laser Photon. Rev. (1)

N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).

Opt. Lett. (4)

Phys. Lett. (1)

D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20(3), 277 (1966).

Solid State Lasers XVI: Technol. Devices (1)

J. Chilla, Q. Z. Shu, H. L. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers - art. no. 645109,” Solid State Lasers XVI: Technol. Devices 6451, 45109–45109 (2007).

Solid State Lasers XVI: Technology and Devices (1)

L. E. Hunziker, Q. Z. Shu, D. Bauer, C. Ihli, G. J. Mahnke, M. Rebut, J. R. Chilla, A. L. Caprara, H. L. Zhou, E. S. Weiss, and M. K. Reed, “Power-scaling of optically-pumped semiconductor lasers - art. no. 64510A,” Solid State Lasers XVI: Technology and Devices 6451, 4510–4510 (2007).

Other (4)

N. Hempler, J. M. Hopkins, and M. Rattunde, “Tuning and brightness optimisation of high-performance GaSb-based semiconductor disk lasers from 1.86 to 2.80 µm,” European Conference on Lasers and Electro-Optics, CB7.3, 2009.

I. T. Sorokina, and E. Sorokin, “Chirped-Mirror Dispersion Controlled Femtosecond Cr:ZnSe Laser,” Advanced Solid-State Photonics, 2007.

S. B. Mirov, V. V. Fedorov, I. S. Moskalev, D. V. Martyshkin and C. Kim, “Progress in Cr2+ and Fe2+ dopded Mid-IR Laser Materials,” Laser Photonics Rev., DOI 10.1002/Ipor.200810076, 2009.

S. Calvez, J. E. Hastie, M. Guina, O. Okhotnikov and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photonics Rev., DIO 10.1002, 2009.

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Figures (5)

Fig. 1
Fig. 1

Schematic of the 3-mirror semiconductor disk laser (SDL) comprised of: two f=11mm focusing lenses (f1 and f2); a 100mm radius of curvature concave high-reflector (M1) and a R=91% output coupling mirror (M2); optional quartz birefringent filter (BRF) – used for the tuning experiment or a Brewster-angled fused silica plate (FSP) – for polarisation definition.

Fig. 2
Fig. 2

Power transfer characteristics of the 2.0μm SDL at room temperature and −15°C. Inset: Tuning range of the SDL.

Fig. 3
Fig. 3

Schematic of the Cr2+:ZnSe laser arrangement comprised of: pump focusing lens f1=70mm; highly reflecting curved mirrors (M2) r=100mm and (M3) r=50mm; output coupler (M3) R=71%; pump retro-reflecting mirror (MP) r=100mm; a 3mm thick Cr2+:ZnSe crystal. For tuning purposes the resonator was extended replacing M3 with a 100mm radius of curvature mirror which was tilted to allow for another resonator arm that consisted of a prism and high reflective mirror M4.

Fig. 4
Fig. 4

Power transfer characteristics of the semiconductor disk laser pumped Cr2+:ZnSe laser using output couplers with reflectivities between 61-99%.

Fig. 5
Fig. 5

Power transfer of the SDL-pumped Cr2+:ZnSe laser with the SDL chip cooled to −15°C. Inset: Tuning characteristic of the prism-tuned Cr2+:ZnSe laser between 2.25 and 2.55μm.

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