Abstract

We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1µm for ease of fiber alignment. At a base-emitter bias of VBE=2.5V, a π-phase shift requires 74.5µm interaction length for TM polarization at λ=1.55µm. The total optical attenuation is 3.9dB to achieve a π-phase shift in this condition. This device is expected to operate at a switching speed of 2.4GHz.

© 2009 Optical Society of America

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2008 (1)

F. Y. Gardes, G. T. Reed, A. P. Knights, and G. Mashanovich, “Evolution of optical modulation using majority carrier plasma dispersion effect in SOI”, Proc. of SPIE 6898, 68980C-68980C-10 (2008).
[Crossref]

2007 (5)

2006 (1)

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

2005 (4)

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[Crossref] [PubMed]

Y. Jiang, W. Jiang, L. Gu, X. Chen, and R. T. Chen, “80-micron interaction length silicon photonic crystal waveguide modulator,” Appl. Phys. Lett. 87(22), 221105 (2005).
[Crossref]

L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High Speed Silicon Mach-Zehnder Modulator,” Opt. Express 13(8), 3129–3135 (2005).
[Crossref] [PubMed]

2004 (1)

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[Crossref] [PubMed]

2003 (5)

2001 (1)

G. Coppola, A. Irace, M. Iodice, and A. Cutolo, “Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror,” Opt. Eng. 40(6), 1076–1081 (2001).
[Crossref]

1997 (2)

A. Cutolo, M. Iodice, P. Spirito, and L. Zeni, “Silicon Electro-Optic Modulator Based on a Three Terminal Device Integrated in a Low-Loss Single-Mode SOI Waveguide,” J. Lightwave Technol. 15(3), 505–518 (1997).
[Crossref]

A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, “An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide,” Appl. Phys. Lett. 71(2), 199 (1997).
[Crossref]

1996 (1)

M. Y. Liu and S. Chou, “High-modulation-depth and short-cavity-length silicon Fabry-Perot modulator with two grating Bragg reflectors,” Appl. Phys. Lett. 68(2), 170 (1996).
[Crossref]

1995 (1)

C. Cocorullo, M. Iodice, I. Rendina, and P. M. Sarro, “Silicon thermo-optical micro-modulator with 700 kHz - 3 dB bandwidth,” IEEE Photon. Technol. Lett. 7(4), 363–365 (1995).
[Crossref]

1991 (2)

X. Xiao, J. C. Sturm, K. K. Goel, and P. V. Schwartz, “Fabry-Perot optical intensity modulator at 1.3µm in silicon,” IEEE Photon. Technol. Lett. 3(3), 230–231 (1991).
[Crossref]

R. A. Soref, J. Schmidtchen, and K. Petermann, “Large Single-Mode Rib Waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27(8), 1971–1974 (1991).
[Crossref]

1990 (1)

R. D. Lareau, L. Friedman, and R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26(20), 1653–1655 (1990).
[Crossref]

1986 (1)

R. A. Soref and B. R. Bennett, “Kramers-Kronig analysis of electro-optical switching in silicon,” SPIE Integr. Opt. Circuit Eng. 704, 32–37 (1986).

Alessandria, A.

Almeida, V. R.

Andersen, K. N.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Atta, R. M. H.

C. E. Png, G. T. Reed, R. M. H. Atta, G. Ensell, and A. G. R. Evans, “Development of Small Silicon Modulators in SOI,” Proc. SPIE 4997, 190–197(2003).
[Crossref]

Avitabile, D.

Barrios, C. A.

Bennett, B. R.

R. A. Soref and B. R. Bennett, “Kramers-Kronig analysis of electro-optical switching in silicon,” SPIE Integr. Opt. Circuit Eng. 704, 32–37 (1986).

Bjarklev, A.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Borel, P. I.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Chen, R. T.

Y. Jiang, W. Jiang, L. Gu, X. Chen, and R. T. Chen, “80-micron interaction length silicon photonic crystal waveguide modulator,” Appl. Phys. Lett. 87(22), 221105 (2005).
[Crossref]

Chen, X.

Y. Jiang, W. Jiang, L. Gu, X. Chen, and R. T. Chen, “80-micron interaction length silicon photonic crystal waveguide modulator,” Appl. Phys. Lett. 87(22), 221105 (2005).
[Crossref]

Chetrit, Y.

Chou, S.

M. Y. Liu and S. Chou, “High-modulation-depth and short-cavity-length silicon Fabry-Perot modulator with two grating Bragg reflectors,” Appl. Phys. Lett. 68(2), 170 (1996).
[Crossref]

Ciftcioglu, B.

Cocorullo, C.

C. Cocorullo, M. Iodice, I. Rendina, and P. M. Sarro, “Silicon thermo-optical micro-modulator with 700 kHz - 3 dB bandwidth,” IEEE Photon. Technol. Lett. 7(4), 363–365 (1995).
[Crossref]

Coffa, S.

Cohen, O.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[Crossref] [PubMed]

Coppola, G.

A. Sciuto, S. Libertino, A. Alessandria, S. Coffa, and G. Coppola, “Design, Fabrication, and Testing of an Interated Si-Based Light Modulator,” J. Lightwave Technol. 21(1), 228–235 (2003).
[Crossref]

G. Coppola, A. Irace, M. Iodice, and A. Cutolo, “Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror,” Opt. Eng. 40(6), 1076–1081 (2001).
[Crossref]

Cutolo, A.

G. Coppola, A. Irace, M. Iodice, and A. Cutolo, “Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror,” Opt. Eng. 40(6), 1076–1081 (2001).
[Crossref]

A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, “An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide,” Appl. Phys. Lett. 71(2), 199 (1997).
[Crossref]

A. Cutolo, M. Iodice, P. Spirito, and L. Zeni, “Silicon Electro-Optic Modulator Based on a Three Terminal Device Integrated in a Low-Loss Single-Mode SOI Waveguide,” J. Lightwave Technol. 15(3), 505–518 (1997).
[Crossref]

Deng, S.

S. Deng, Z. R. Huang, J.-R. Guo, J. F. McDonald, and R. P. Kraft, “Numerical Investigation of a SiGe HBT Electro-optic Modulator,” in proceedings of IEEE/LEOS Winter Topicals Meeting Series, 14–15, (2009)
[Crossref]

Ensell, G.

C. E. Png, G. T. Reed, R. M. H. Atta, G. Ensell, and A. G. R. Evans, “Development of Small Silicon Modulators in SOI,” Proc. SPIE 4997, 190–197(2003).
[Crossref]

Evans, A. G. R.

C. E. Png, G. T. Reed, R. M. H. Atta, G. Ensell, and A. G. R. Evans, “Development of Small Silicon Modulators in SOI,” Proc. SPIE 4997, 190–197(2003).
[Crossref]

Fage-Pedersen, J.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Franck, T.

Frandsen, L. H.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Friedman, L.

R. D. Lareau, L. Friedman, and R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26(20), 1653–1655 (1990).
[Crossref]

Gardes, F. Y.

F. Y. Gardes, G. T. Reed, A. P. Knights, and G. Mashanovich, “Evolution of optical modulation using majority carrier plasma dispersion effect in SOI”, Proc. of SPIE 6898, 68980C-68980C-10 (2008).
[Crossref]

F. Y. Gardes, K. L. Tsakmakidis, D. Thomson, G. T. Reed, G. Z. Mashanovich, O. Hess, and D. Avitabile, “Micrometer size polarisation independent depletion-type photonic modulator in Silicon On Insulator,” Opt. Express 15(9), 5879–5884 (2007).
[Crossref] [PubMed]

Ge, Y.

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Goel, K. K.

X. Xiao, J. C. Sturm, K. K. Goel, and P. V. Schwartz, “Fabry-Perot optical intensity modulator at 1.3µm in silicon,” IEEE Photon. Technol. Lett. 3(3), 230–231 (1991).
[Crossref]

Green, W. M. J.

Gu, L.

Y. Jiang, W. Jiang, L. Gu, X. Chen, and R. T. Chen, “80-micron interaction length silicon photonic crystal waveguide modulator,” Appl. Phys. Lett. 87(22), 221105 (2005).
[Crossref]

Guo, J.-R.

S. Deng, Z. R. Huang, J.-R. Guo, J. F. McDonald, and R. P. Kraft, “Numerical Investigation of a SiGe HBT Electro-optic Modulator,” in proceedings of IEEE/LEOS Winter Topicals Meeting Series, 14–15, (2009)
[Crossref]

Hansen, O.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Harris, J. S.

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Hess, O.

Hodge, D.

Huang, Z. R.

S. Deng, Z. R. Huang, J.-R. Guo, J. F. McDonald, and R. P. Kraft, “Numerical Investigation of a SiGe HBT Electro-optic Modulator,” in proceedings of IEEE/LEOS Winter Topicals Meeting Series, 14–15, (2009)
[Crossref]

Iodice, M.

G. Coppola, A. Irace, M. Iodice, and A. Cutolo, “Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror,” Opt. Eng. 40(6), 1076–1081 (2001).
[Crossref]

A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, “An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide,” Appl. Phys. Lett. 71(2), 199 (1997).
[Crossref]

A. Cutolo, M. Iodice, P. Spirito, and L. Zeni, “Silicon Electro-Optic Modulator Based on a Three Terminal Device Integrated in a Low-Loss Single-Mode SOI Waveguide,” J. Lightwave Technol. 15(3), 505–518 (1997).
[Crossref]

C. Cocorullo, M. Iodice, I. Rendina, and P. M. Sarro, “Silicon thermo-optical micro-modulator with 700 kHz - 3 dB bandwidth,” IEEE Photon. Technol. Lett. 7(4), 363–365 (1995).
[Crossref]

Irace, A.

G. Coppola, A. Irace, M. Iodice, and A. Cutolo, “Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror,” Opt. Eng. 40(6), 1076–1081 (2001).
[Crossref]

A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, “An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide,” Appl. Phys. Lett. 71(2), 199 (1997).
[Crossref]

Izhaky, N.

Jacobsen, R. S.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Jiang, W.

Y. Jiang, W. Jiang, L. Gu, X. Chen, and R. T. Chen, “80-micron interaction length silicon photonic crystal waveguide modulator,” Appl. Phys. Lett. 87(22), 221105 (2005).
[Crossref]

Jiang, Y.

Y. Jiang, W. Jiang, L. Gu, X. Chen, and R. T. Chen, “80-micron interaction length silicon photonic crystal waveguide modulator,” Appl. Phys. Lett. 87(22), 221105 (2005).
[Crossref]

Jones, R.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[Crossref] [PubMed]

Kamins, T. I.

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Keil, U. D.

Knights, A. P.

F. Y. Gardes, G. T. Reed, A. P. Knights, and G. Mashanovich, “Evolution of optical modulation using majority carrier plasma dispersion effect in SOI”, Proc. of SPIE 6898, 68980C-68980C-10 (2008).
[Crossref]

Kraft, R. P.

S. Deng, Z. R. Huang, J.-R. Guo, J. F. McDonald, and R. P. Kraft, “Numerical Investigation of a SiGe HBT Electro-optic Modulator,” in proceedings of IEEE/LEOS Winter Topicals Meeting Series, 14–15, (2009)
[Crossref]

Kristensen, M.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Kuo, Y. H.

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Lareau, R. D.

R. D. Lareau, L. Friedman, and R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26(20), 1653–1655 (1990).
[Crossref]

Lavrinenko, A. V.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Lee, Y. K.

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Liao, L.

Libertino, S.

Lipson, M.

Liu, A.

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15, 660–668 (2007).
[Crossref] [PubMed]

L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High Speed Silicon Mach-Zehnder Modulator,” Opt. Express 13(8), 3129–3135 (2005).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[Crossref] [PubMed]

A. Liu, “Announcing the world’s first 40G silicon laser modulator”, http://blogs.intel.com/research/2007/07/40g_modulator.php

Liu, M. Y.

M. Y. Liu and S. Chou, “High-modulation-depth and short-cavity-length silicon Fabry-Perot modulator with two grating Bragg reflectors,” Appl. Phys. Lett. 68(2), 170 (1996).
[Crossref]

Manipatruni, S.

Mashanovich, G.

F. Y. Gardes, G. T. Reed, A. P. Knights, and G. Mashanovich, “Evolution of optical modulation using majority carrier plasma dispersion effect in SOI”, Proc. of SPIE 6898, 68980C-68980C-10 (2008).
[Crossref]

Mashanovich, G. Z.

McDonald, J. F.

S. Deng, Z. R. Huang, J.-R. Guo, J. F. McDonald, and R. P. Kraft, “Numerical Investigation of a SiGe HBT Electro-optic Modulator,” in proceedings of IEEE/LEOS Winter Topicals Meeting Series, 14–15, (2009)
[Crossref]

McNab, S. J.

Miller, D. A. B.

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Moll, N.

Morse, M.

Moulin, G.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Ng, K. K.

S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons, Inc, 2007), Chap. 5.

Nguyen, H.

Nicolaescu, R.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[Crossref] [PubMed]

Ning, T. H.

Y. Taur and T. H. Ning, Fundamentals of Moerdern VLSI Devices (Cambridge University Press, 1998), Chap. 6.

Ou, H.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Panepucci, R.

Paniccia, M.

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15, 660–668 (2007).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[Crossref] [PubMed]

Petermann, K.

R. A. Soref, J. Schmidtchen, and K. Petermann, “Large Single-Mode Rib Waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27(8), 1971–1974 (1991).
[Crossref]

Peucheret, C.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Png, C. E.

C. E. Png, G. T. Reed, R. M. H. Atta, G. Ensell, and A. G. R. Evans, “Development of Small Silicon Modulators in SOI,” Proc. SPIE 4997, 190–197(2003).
[Crossref]

Pradhan, S.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[Crossref] [PubMed]

Reed, G. T.

F. Y. Gardes, G. T. Reed, A. P. Knights, and G. Mashanovich, “Evolution of optical modulation using majority carrier plasma dispersion effect in SOI”, Proc. of SPIE 6898, 68980C-68980C-10 (2008).
[Crossref]

F. Y. Gardes, K. L. Tsakmakidis, D. Thomson, G. T. Reed, G. Z. Mashanovich, O. Hess, and D. Avitabile, “Micrometer size polarisation independent depletion-type photonic modulator in Silicon On Insulator,” Opt. Express 15(9), 5879–5884 (2007).
[Crossref] [PubMed]

C. E. Png, G. T. Reed, R. M. H. Atta, G. Ensell, and A. G. R. Evans, “Development of Small Silicon Modulators in SOI,” Proc. SPIE 4997, 190–197(2003).
[Crossref]

Ren, S.

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Rendina, I.

C. Cocorullo, M. Iodice, I. Rendina, and P. M. Sarro, “Silicon thermo-optical micro-modulator with 700 kHz - 3 dB bandwidth,” IEEE Photon. Technol. Lett. 7(4), 363–365 (1995).
[Crossref]

Rooks, M. J.

Rosa de Almeida, V.

Roth, J. E.

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

Rubin, D.

Samara-Rubio, D.

L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High Speed Silicon Mach-Zehnder Modulator,” Opt. Express 13(8), 3129–3135 (2005).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[Crossref] [PubMed]

Sarro, P. M.

C. Cocorullo, M. Iodice, I. Rendina, and P. M. Sarro, “Silicon thermo-optical micro-modulator with 700 kHz - 3 dB bandwidth,” IEEE Photon. Technol. Lett. 7(4), 363–365 (1995).
[Crossref]

Schmidt, B.

Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s Carrier-injection-based silicon microring silicon modulators,” Opt. Express 15, 430–436 (2007).
[Crossref] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[Crossref] [PubMed]

S. Manipatruni, Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “High Speed Carrier Injection 18Gb/s Silicon Micro-ring Electro-optic Modulator,” in Proceedings of Lasers and Electro-Optics Society (IEEE, 2007), pp.537–538.

Schmidtchen, J.

R. A. Soref, J. Schmidtchen, and K. Petermann, “Large Single-Mode Rib Waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27(8), 1971–1974 (1991).
[Crossref]

Schwartz, P. V.

X. Xiao, J. C. Sturm, K. K. Goel, and P. V. Schwartz, “Fabry-Perot optical intensity modulator at 1.3µm in silicon,” IEEE Photon. Technol. Lett. 3(3), 230–231 (1991).
[Crossref]

Sciuto, A.

Sekaric, L.

Shakya, J.

Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s Carrier-injection-based silicon microring silicon modulators,” Opt. Express 15, 430–436 (2007).
[Crossref] [PubMed]

S. Manipatruni, Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “High Speed Carrier Injection 18Gb/s Silicon Micro-ring Electro-optic Modulator,” in Proceedings of Lasers and Electro-Optics Society (IEEE, 2007), pp.537–538.

Soref, R. A.

R. A. Soref, J. Schmidtchen, and K. Petermann, “Large Single-Mode Rib Waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27(8), 1971–1974 (1991).
[Crossref]

R. D. Lareau, L. Friedman, and R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26(20), 1653–1655 (1990).
[Crossref]

R. A. Soref and B. R. Bennett, “Kramers-Kronig analysis of electro-optical switching in silicon,” SPIE Integr. Opt. Circuit Eng. 704, 32–37 (1986).

Spirito, P.

A. Cutolo, M. Iodice, P. Spirito, and L. Zeni, “Silicon Electro-Optic Modulator Based on a Three Terminal Device Integrated in a Low-Loss Single-Mode SOI Waveguide,” J. Lightwave Technol. 15(3), 505–518 (1997).
[Crossref]

A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, “An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide,” Appl. Phys. Lett. 71(2), 199 (1997).
[Crossref]

Sturm, J. C.

X. Xiao, J. C. Sturm, K. K. Goel, and P. V. Schwartz, “Fabry-Perot optical intensity modulator at 1.3µm in silicon,” IEEE Photon. Technol. Lett. 3(3), 230–231 (1991).
[Crossref]

Sze, S. M.

S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons, Inc, 2007), Chap. 5.

Taur, Y.

Y. Taur and T. H. Ning, Fundamentals of Moerdern VLSI Devices (Cambridge University Press, 1998), Chap. 6.

Thomson, D.

Tsakmakidis, K. L.

Vlasov, Y. A.

Xiao, X.

X. Xiao, J. C. Sturm, K. K. Goel, and P. V. Schwartz, “Fabry-Perot optical intensity modulator at 1.3µm in silicon,” IEEE Photon. Technol. Lett. 3(3), 230–231 (1991).
[Crossref]

Xu, Q.

S. Manipatruni, Q. Xu, and M. Lipson, “PINIP based high-speed high-extinction ratio micron-size silicon electro-optic modulator,” Opt. Express 15(20), 13035–13042 (2007).
[Crossref] [PubMed]

Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s Carrier-injection-based silicon microring silicon modulators,” Opt. Express 15, 430–436 (2007).
[Crossref] [PubMed]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[Crossref] [PubMed]

S. Manipatruni, Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “High Speed Carrier Injection 18Gb/s Silicon Micro-ring Electro-optic Modulator,” in Proceedings of Lasers and Electro-Optics Society (IEEE, 2007), pp.537–538.

Zeni, L.

A. Cutolo, M. Iodice, P. Spirito, and L. Zeni, “Silicon Electro-Optic Modulator Based on a Three Terminal Device Integrated in a Low-Loss Single-Mode SOI Waveguide,” J. Lightwave Technol. 15(3), 505–518 (1997).
[Crossref]

A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, “An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide,” Appl. Phys. Lett. 71(2), 199 (1997).
[Crossref]

Zsigri, B.

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

Appl. Phys. Lett. (3)

Y. Jiang, W. Jiang, L. Gu, X. Chen, and R. T. Chen, “80-micron interaction length silicon photonic crystal waveguide modulator,” Appl. Phys. Lett. 87(22), 221105 (2005).
[Crossref]

A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, “An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide,” Appl. Phys. Lett. 71(2), 199 (1997).
[Crossref]

M. Y. Liu and S. Chou, “High-modulation-depth and short-cavity-length silicon Fabry-Perot modulator with two grating Bragg reflectors,” Appl. Phys. Lett. 68(2), 170 (1996).
[Crossref]

Electron. Lett. (1)

R. D. Lareau, L. Friedman, and R. A. Soref, “Waveguided electro-optical intensity modulation in a Si/GexSi1-x/Si heterojunction bipolar transistor,” Electron. Lett. 26(20), 1653–1655 (1990).
[Crossref]

IEEE J. Quantum Electron. (1)

R. A. Soref, J. Schmidtchen, and K. Petermann, “Large Single-Mode Rib Waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron. 27(8), 1971–1974 (1991).
[Crossref]

IEEE Photon. Technol. Lett. (2)

X. Xiao, J. C. Sturm, K. K. Goel, and P. V. Schwartz, “Fabry-Perot optical intensity modulator at 1.3µm in silicon,” IEEE Photon. Technol. Lett. 3(3), 230–231 (1991).
[Crossref]

C. Cocorullo, M. Iodice, I. Rendina, and P. M. Sarro, “Silicon thermo-optical micro-modulator with 700 kHz - 3 dB bandwidth,” IEEE Photon. Technol. Lett. 7(4), 363–365 (1995).
[Crossref]

J. Lightwave Technol. (4)

Nature (4)

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[Crossref] [PubMed]

Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005).
[Crossref] [PubMed]

R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, and A. Bjarklev, “Strained silicon as a new electro-optic material,” Nature 441(7090), 199–202 (2006).
[Crossref] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[Crossref] [PubMed]

Opt. Eng. (1)

G. Coppola, A. Irace, M. Iodice, and A. Cutolo, “Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror,” Opt. Eng. 40(6), 1076–1081 (2001).
[Crossref]

Opt. Express (7)

Proc. of SPIE (1)

F. Y. Gardes, G. T. Reed, A. P. Knights, and G. Mashanovich, “Evolution of optical modulation using majority carrier plasma dispersion effect in SOI”, Proc. of SPIE 6898, 68980C-68980C-10 (2008).
[Crossref]

Proc. SPIE (1)

C. E. Png, G. T. Reed, R. M. H. Atta, G. Ensell, and A. G. R. Evans, “Development of Small Silicon Modulators in SOI,” Proc. SPIE 4997, 190–197(2003).
[Crossref]

SPIE Integr. Opt. Circuit Eng. (1)

R. A. Soref and B. R. Bennett, “Kramers-Kronig analysis of electro-optical switching in silicon,” SPIE Integr. Opt. Circuit Eng. 704, 32–37 (1986).

Other (5)

S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons, Inc, 2007), Chap. 5.

A. Liu, “Announcing the world’s first 40G silicon laser modulator”, http://blogs.intel.com/research/2007/07/40g_modulator.php

S. Manipatruni, Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “High Speed Carrier Injection 18Gb/s Silicon Micro-ring Electro-optic Modulator,” in Proceedings of Lasers and Electro-Optics Society (IEEE, 2007), pp.537–538.

S. Deng, Z. R. Huang, J.-R. Guo, J. F. McDonald, and R. P. Kraft, “Numerical Investigation of a SiGe HBT Electro-optic Modulator,” in proceedings of IEEE/LEOS Winter Topicals Meeting Series, 14–15, (2009)
[Crossref]

Y. Taur and T. H. Ning, Fundamentals of Moerdern VLSI Devices (Cambridge University Press, 1998), Chap. 6.

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Figures (9)

Fig. 1.
Fig. 1.

3D Schematic of the HBT EO modulator (not drawn to scale)

Fig. 2.
Fig. 2.

Doping profile through the device center

Fig. 3.
Fig. 3.

Energy band diagram along y-axis at the device center under (a) Equilibrium condition, (b) No injection (VBE =0V, VCE =1.5V) from emitter to base, (c) Low injection (VBE =1.0V, VCE =1.5V), and (d) high injection (VBE =2.5V, VCE =1.5V) condition.

Fig. 4.
Fig. 4.

One-dimensional carrier density plot along y-axis at device center for (a) electrons, and (b) holes (insets for locations between 0.5µm to 0.7µm at VBE =1.5V to 3.0V)

Fig. 5.
Fig. 5.

Refractive index profile for λ=1.55µm with VBE =(a) 0V (b) 1.5V (c) 2.5V

Fig. 6.
Fig. 6.

(a) Cross-section of a standard rib waveguide, (b) Cross-section of a HBT waveguide structure, and (c) Single mode region for SiO2/Si/SiO2 with r=0.667 and 0.533.

Fig. 7.
Fig. 7.

Mode profiles at λ=1.55µm, TE mode (a) VBE =0V (b) VBE =1.5V (c) VBE =2.5V; TM mode (d) VBE =0V (e) VBE =1.5V (f) VBE =2.5V

Fig. 8.
Fig. 8.

Δneff as a function of VBE

Fig. 9.
Fig. 9.

Transient analysis: (a) input pulse VBE , and (b) IC response.

Tables (1)

Tables Icon

Table 1. Comparison of Reported Silicon EO Modulator in Recent Years (ts is the total switching time, length refers to the active component length, and FCAM is the acronym for free carrier absorption modulator)

Equations (6)

Equations on this page are rendered with MathJax. Learn more.

{Δn=Δne+Δnh=[8.8×1022ΔNe+8.5×1018(ΔNh)0.8]Δα=Δαe+Δαh=8.5×1018ΔNe+6.0×1018ΔNh
{Δn=Δne+Δnh=[6.2×1022ΔNe+6.0×1018(ΔNh)0.8]Δα=Δαe+Δαh=6.0×1018ΔNe+4.0×1018ΔNh
n (0)=np0 exp [q(VBEΔVBE)(nkT)]
Lπ =λ02Δneff
tF=tE+tB+tBE+tBCtE+tB+tBC =wB2ηDn+wEwBθDn+wdBC2vs
η 2 [1+(εbiε0)32]

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