Abstract

Almost chirp-free pulses with a duration of 190 fs were achieved from a mode-locked semiconductor disk laser (SDL) emitting at ≈1045 nm. Pulse shaping was different from the soliton-like mode-locking process known from lasers using dielectric gain media; passive amplitude modulation provided by a fast saturable absorber was essential. The spectrum of the absorber had to be matched to the gain spectrum within a few nm. A tapered diode amplifier was demonstrated to be a device for both picking and amplifying SDL pulses. The pulse repetition rate of the SDL output was reduced from 3 GHz to 47 MHz.

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2008 (5)

2007 (2)

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

E. J. Saarinen, R. Herda, and O. G. Okhotnikov, “Dynamics of pulse formation in mode-locked semiconductor disk lasers,” J. Opt. Soc. Am. B 24(11), 2784–2790 (2007).
[CrossRef]

2006 (3)

P. Dupriez, C. Finot, A. Malinowski, J. K. Sahu, J. Nilsson, D. J. Richardson, K. G. Wilcox, H. D. Foreman, and A. C. Tropper, “High-power, high repetition rate picosecond and femtosecond sources based on Yb-doped fiber amplification of VECSELs,” Opt. Express 14(21), 9611–9616 (2006).
[CrossRef]

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
[CrossRef]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89(14), 141107 (2006).
[CrossRef]

2005 (1)

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17(2), 267–269 (2005).
[CrossRef]

2002 (2)

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[CrossRef]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80(21), 3892–3894 (2002).
[CrossRef]

2001 (1)

R. Paschotta and U. Keller, “Passive mode locking with slow saturable absorbers,” Appl. Phys. B 73(7), 653–662 (2001).
[CrossRef]

2000 (1)

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

1999 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

1989 (1)

D. S. Chemla, W. H. Knox, D. A. B. Miller, S. Schmitt-Rink, J. B. Stark, and R. Zimmermann, “The excitonic optical Stark effect in semiconductor quantum wells probed with femtosecond optical pulses,” J. Lumin. 44(4-6), 233–246 (1989).
[CrossRef]

1988 (1)

E. Schöll, K. Ketterer, E. H. Böttcher, and D. Bimberg, “Gain-Switched Semiconductor Laser Amplifier as an Ultrafast Dynamical Optical Gate,” Appl. Phys. B 46, 69–77 (1988).
[CrossRef]

1985 (1)

K. J. Linden, “Single Mode, Short Cavity, Pb-Salt Diode Lasers Operating in the 5, 10, and 30 μm Spectral Regions,” IEEE J. Quantum Electron. 21(4), 391–394 (1985).
[CrossRef]

Bellancourt, A.-R.

Bimberg, D.

E. Schöll, K. Ketterer, E. H. Böttcher, and D. Bimberg, “Gain-Switched Semiconductor Laser Amplifier as an Ultrafast Dynamical Optical Gate,” Appl. Phys. B 46, 69–77 (1988).
[CrossRef]

Böttcher, E. H.

E. Schöll, K. Ketterer, E. H. Böttcher, and D. Bimberg, “Gain-Switched Semiconductor Laser Amplifier as an Ultrafast Dynamical Optical Gate,” Appl. Phys. B 46, 69–77 (1988).
[CrossRef]

Chemla, D. S.

D. S. Chemla, W. H. Knox, D. A. B. Miller, S. Schmitt-Rink, J. B. Stark, and R. Zimmermann, “The excitonic optical Stark effect in semiconductor quantum wells probed with femtosecond optical pulses,” J. Lumin. 44(4-6), 233–246 (1989).
[CrossRef]

Daniell, G. J.

Dhanjal, S.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

Döring, S.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

Dupriez, P.

Elsmere, S.

Farrer, I.

Finot, C.

Foreman, H. D.

Garnache, A.

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17(2), 267–269 (2005).
[CrossRef]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80(21), 3892–3894 (2002).
[CrossRef]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[CrossRef]

Gini, E.

Ginolas, A.

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, and M. Weyers, “Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE,” J. Cryst. Growth 310(23), 5187–5190 (2008).
[CrossRef]

Grenzer, J.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

Griebner, U.

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, and M. Weyers, “Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE,” J. Cryst. Growth 310(23), 5187–5190 (2008).
[CrossRef]

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express 16(8), 5770–5775 (2008).
[CrossRef]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89(14), 141107 (2006).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Häring, R.

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

Herda, R.

Hoffmann, M.

Hoogland, S.

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17(2), 267–269 (2005).
[CrossRef]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80(21), 3892–3894 (2002).
[CrossRef]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

Kan, H.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Keller, U.

B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T. Südmeyer, and U. Keller, “Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode,” Opt. Lett. 33(22), 2719–2721 (2008).
[CrossRef]

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
[CrossRef]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[CrossRef]

R. Paschotta and U. Keller, “Passive mode locking with slow saturable absorbers,” Appl. Phys. B 73(7), 653–662 (2001).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

Ketterer, K.

E. Schöll, K. Ketterer, E. H. Böttcher, and D. Bimberg, “Gain-Switched Semiconductor Laser Amplifier as an Ultrafast Dynamical Optical Gate,” Appl. Phys. B 46, 69–77 (1988).
[CrossRef]

Klopp, P.

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express 16(8), 5770–5775 (2008).
[CrossRef]

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, and M. Weyers, “Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE,” J. Cryst. Growth 310(23), 5187–5190 (2008).
[CrossRef]

Knox, W. H.

D. S. Chemla, W. H. Knox, D. A. B. Miller, S. Schmitt-Rink, J. B. Stark, and R. Zimmermann, “The excitonic optical Stark effect in semiconductor quantum wells probed with femtosecond optical pulses,” J. Lumin. 44(4-6), 233–246 (1989).
[CrossRef]

Korn, D.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

Krüger, O.

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, and M. Weyers, “Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE,” J. Cryst. Growth 310(23), 5187–5190 (2008).
[CrossRef]

Kuwabara, M.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Linden, K. J.

K. J. Linden, “Single Mode, Short Cavity, Pb-Salt Diode Lasers Operating in the 5, 10, and 30 μm Spectral Regions,” IEEE J. Quantum Electron. 21(4), 391–394 (1985).
[CrossRef]

Maas, D. J. H. C.

Malinowski, A.

Mihoubi, Z.

Miller, D. A. B.

D. S. Chemla, W. H. Knox, D. A. B. Miller, S. Schmitt-Rink, J. B. Stark, and R. Zimmermann, “The excitonic optical Stark effect in semiconductor quantum wells probed with femtosecond optical pulses,” J. Lumin. 44(4-6), 233–246 (1989).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Morier-Genoud, F.

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

Nilsson, J.

Okhotnikov, O. G.

Paschotta, R.

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[CrossRef]

R. Paschotta and U. Keller, “Passive mode locking with slow saturable absorbers,” Appl. Phys. B 73(7), 653–662 (2001).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

Pietsch, U.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

Pittroff, W.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

Quarterman, A.

Richardson, D. J.

Ritchie, D. A.

Roberts, J. S.

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17(2), 267–269 (2005).
[CrossRef]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80(21), 3892–3894 (2002).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

Rudin, B.

Rutz, A.

Saarinen, E. J.

Saas, F.

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express 16(8), 5770–5775 (2008).
[CrossRef]

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, and M. Weyers, “Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE,” J. Cryst. Growth 310(23), 5187–5190 (2008).
[CrossRef]

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89(14), 141107 (2006).
[CrossRef]

Sagnes, I.

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17(2), 267–269 (2005).
[CrossRef]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80(21), 3892–3894 (2002).
[CrossRef]

Sahu, J. K.

Saint-Girons, G.

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80(21), 3892–3894 (2002).
[CrossRef]

Schmitt-Rink, S.

D. S. Chemla, W. H. Knox, D. A. B. Miller, S. Schmitt-Rink, J. B. Stark, and R. Zimmermann, “The excitonic optical Stark effect in semiconductor quantum wells probed with femtosecond optical pulses,” J. Lumin. 44(4-6), 233–246 (1989).
[CrossRef]

Schöll, E.

E. Schöll, K. Ketterer, E. H. Böttcher, and D. Bimberg, “Gain-Switched Semiconductor Laser Amplifier as an Ultrafast Dynamical Optical Gate,” Appl. Phys. B 46, 69–77 (1988).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

Stark, J. B.

D. S. Chemla, W. H. Knox, D. A. B. Miller, S. Schmitt-Rink, J. B. Stark, and R. Zimmermann, “The excitonic optical Stark effect in semiconductor quantum wells probed with femtosecond optical pulses,” J. Lumin. 44(4-6), 233–246 (1989).
[CrossRef]

Steinmeyer, G.

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89(14), 141107 (2006).
[CrossRef]

Südmeyer, T.

Tropper, A.

Tropper, A. C.

P. Dupriez, C. Finot, A. Malinowski, J. K. Sahu, J. Nilsson, D. J. Richardson, K. G. Wilcox, H. D. Foreman, and A. C. Tropper, “High-power, high repetition rate picosecond and femtosecond sources based on Yb-doped fiber amplification of VECSELs,” Opt. Express 14(21), 9611–9616 (2006).
[CrossRef]

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
[CrossRef]

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17(2), 267–269 (2005).
[CrossRef]

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80(21), 3892–3894 (2002).
[CrossRef]

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[CrossRef]

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

Weyers, M.

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express 16(8), 5770–5775 (2008).
[CrossRef]

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, and M. Weyers, “Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE,” J. Cryst. Growth 310(23), 5187–5190 (2008).
[CrossRef]

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89(14), 141107 (2006).
[CrossRef]

Wilcox, K. G.

Yamashita, Y.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Yoshida, H.

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Zeimer, U.

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

Zimmermann, R.

D. S. Chemla, W. H. Knox, D. A. B. Miller, S. Schmitt-Rink, J. B. Stark, and R. Zimmermann, “The excitonic optical Stark effect in semiconductor quantum wells probed with femtosecond optical pulses,” J. Lumin. 44(4-6), 233–246 (1989).
[CrossRef]

Zorn, M.

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, and M. Weyers, “Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE,” J. Cryst. Growth 310(23), 5187–5190 (2008).
[CrossRef]

P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express 16(8), 5770–5775 (2008).
[CrossRef]

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89(14), 141107 (2006).
[CrossRef]

Appl. Phys. B (3)

R. Paschotta, R. Häring, A. Garnache, S. Hoogland, A. C. Tropper, and U. Keller, “Soliton-like pulseshaping mechanism in passively mode-locked surface-emitting semiconductor lasers,” Appl. Phys. B 75, 445–451 (2002).
[CrossRef]

R. Paschotta and U. Keller, “Passive mode locking with slow saturable absorbers,” Appl. Phys. B 73(7), 653–662 (2001).
[CrossRef]

E. Schöll, K. Ketterer, E. H. Böttcher, and D. Bimberg, “Gain-Switched Semiconductor Laser Amplifier as an Ultrafast Dynamical Optical Gate,” Appl. Phys. B 46, 69–77 (1988).
[CrossRef]

Appl. Phys. Lett. (2)

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, “Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power,” Appl. Phys. Lett. 80(21), 3892–3894 (2002).
[CrossRef]

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers, “Exciton resonance tuning for the generation of sub-picosecond pulses from a mode-locked semiconductor disk laser,” Appl. Phys. Lett. 89(14), 141107 (2006).
[CrossRef]

IEEE J. Quantum Electron. (1)

K. J. Linden, “Single Mode, Short Cavity, Pb-Salt Diode Lasers Operating in the 5, 10, and 30 μm Spectral Regions,” IEEE J. Quantum Electron. 21(4), 391–394 (1985).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “Design and Characteristics of High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE J. Sel. Top. Quantum Electron. 5(3), 561–573 (1999).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 12(9), 1135–1137 (2000).
[CrossRef]

S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, and A. C. Tropper, “10-GHz Train of Sub-500-fs Optical Soliton-Like Pulses From a Surface-Emitting Semiconductor Laser,” IEEE Photon. Technol. Lett. 17(2), 267–269 (2005).
[CrossRef]

J. Cryst. Growth (1)

M. Zorn, P. Klopp, F. Saas, A. Ginolas, O. Krüger, U. Griebner, and M. Weyers, “Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE,” J. Cryst. Growth 310(23), 5187–5190 (2008).
[CrossRef]

J. Lumin. (1)

D. S. Chemla, W. H. Knox, D. A. B. Miller, S. Schmitt-Rink, J. B. Stark, and R. Zimmermann, “The excitonic optical Stark effect in semiconductor quantum wells probed with femtosecond optical pulses,” J. Lumin. 44(4-6), 233–246 (1989).
[CrossRef]

J. Opt. Soc. Am. B (1)

Nat. Photonics (1)

H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, “A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,” Nat. Photonics 2(9), 551–554 (2008).
[CrossRef]

Opt. Express (2)

Opt. Lett. (2)

Phys. Rep. (1)

U. Keller and A. C. Tropper, “Passively modelocked surface-emitting semiconductor lasers,” Phys. Rep. 429(2), 67–120 (2006).
[CrossRef]

Phys. Status Solidi A (1)

U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers, “X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices,” Phys. Status Solidi A 204(8), 2753–2759 (2007).
[CrossRef]

Other (4)

F. Saas, Erzeugung ultrakurzer Lichtimpulse mit einem Halbleiterscheibenlaser (Shaker Verlag, 2008).

P. Klopp, F. Saas, U. Griebner M. Zorn, and M. Weyers, “Passively Mode-Locked Semiconductor Disk Laser Generating Sub-300-fs Pulses,” CLEO/QELS 2008, CThF6.

G. P. Agrawal, Nonlinear Fiber Optics, 4th ed. (Academic Press, San Diego, CA, 2007).

J. L. Chilla, S. D. Butterworth, A. Zeitschel, J. P. Charles, A. L. Caprara, M. K. Reed, and L. Spinelli, “High power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps, and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

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