Abstract

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 µm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 °C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.

© 2009 OSA

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  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
    [CrossRef]
  2. J. Chilla, St. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High-power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
  3. J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 645109–1 (2007).
  4. V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
    [CrossRef]
  5. J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
    [CrossRef]
  6. A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
    [CrossRef]
  7. A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
    [CrossRef]
  8. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).
  9. A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
    [CrossRef]
  10. A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
    [CrossRef]
  11. Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).
    [CrossRef]
  12. M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
    [CrossRef]

2009 (1)

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

2008 (1)

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

2007 (1)

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

2004 (2)

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

2000 (1)

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).
[CrossRef]

1997 (3)

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

1989 (1)

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

Abraham, P.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Achtenhagen, M.

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

Babic, D. I.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Behrend, J.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Berseth, C. A.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Berseth, C.-A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

Black, A.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Bowers, J. E.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Brennan, T. M.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

Brueck, S. R. J.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

Burns, D.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Caliman, A.

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

Calvez, S.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Carlin, J. F.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Chang, Y.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Dawson, M. D.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Fernandez, J.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Guina, M.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Hammons, B. E.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

Härkönen, A.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Hawkins, A. R.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Holmes, A. L.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Hopkins, J.-M.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Hu, E. L.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

Iakovlev, V.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

Jeon, C. W.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Jouhti, T.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Kapon, E.

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Korpijärvi, V.-M.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Liau, Z. L.

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).
[CrossRef]

Lyytikäinen, J.

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

Margalit, N. M.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

McInerney, J. G.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

Mereuta, A.

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

Mircea, A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Okhotnikov, O.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Okhotnikov, O. G.

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

Osinski, M.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

Pessa, M.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Puustinen, J.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Raja, M. Y. A.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

Rautiainen, J.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

Royo, P.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

Rudra, A.

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Schaus, C. F.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

Sirbu, A.

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

Smith, S. A.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

Sun, H. D.

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

Suruceanu, G.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

Syrbu, A.

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

Syrbu, A. V.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

Tukiainen, A.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Tuomisto, P.

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Appl. Phys. Lett. (1)

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000).
[CrossRef]

Electron. Lett. (2)

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997).
[CrossRef]

J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004).
[CrossRef]

IEEE J. Quantum Electron. (1)

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997).
[CrossRef]

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004).
[CrossRef]

A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007).
[CrossRef]

J. Cryst. Growth (1)

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009).
[CrossRef]

Other (3)

J. Chilla, St. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High-power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).

J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 645109–1 (2007).

J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

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