Abstract

A single layer of dense Si quantum dots with average size of 4 nm sandwiched in amorphous SiN layers was prepared by laser crystallization of ultrathin amorphous Si film followed by subsequently thermal annealing. The electroluminescent diodes were fabricated by evaporating Al electrodes on back sides of p-Si substrates and the top surface of samples. Room temperature electroluminescence can be detected with applying the negative voltage around 10V on the top gate electrode and the luminescent intensity is increased with increasing the applied voltage. It was found that the integrated luminescent intensity is linearly proportional to the injection current which suggested the intensity depends on the concentrations of injected carriers after Fowler-Nordheim tunneling through amorphous SiN barriers. The influence of the amorphous SiN with different band gap on the device performance was also discussed briefly.

© 2009 Optical Society of America

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  1. L. Pavesi, "Will silicon be the photonic material of the third millenium," J. Phys.: Condens. Matter 15, R1169-R1196 (2003).
    [CrossRef]
  2. P. M. Fauchet, "Monolithic silicon light sources," Top. Appl. Phys. 94, 177-199 (2004).
  3. J. M. Shainline and J. Xu, "Silicon as an emissive optical medium," Laser Photon. Rev. 1, 334-348 (2007).
    [CrossRef]
  4. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots :the role of oxygen," Phys. Rev. Lett. 82,197-200 (1999).
    [CrossRef]
  5. P. Photopoulos and A. G. Nassipoulou, "Room and low temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers," Appl. Phys. Lett. 77, 1816-1818 (2000).
    [CrossRef]
  6. G. R. Lin, C. J. Lin, and C. K. Lin, "Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids," Opt. Express 15, 2555-2563 (2007).
    [CrossRef] [PubMed]
  7. J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
    [CrossRef]
  8. C. A. Barrios and M. Lipson, "Electrically driven silicon resonant light emitting device based on slot-waveguide," Opt. Express 13, 10092-10101 (2005).
    [CrossRef] [PubMed]
  9. M. Sopinskyy and V. Khomchenko, "Electroluminescence in SiOx films and SiOx-film-based system," Curr. Opin. Solid State Mater. Sci. 7,97-109 (2003).
    [CrossRef]
  10. L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
    [CrossRef]
  11. G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
    [CrossRef] [PubMed]
  12. Z. Gaburro, G. Pucker, P. Bellutti, and L. Pavesi, "Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers," Solid State Commun. 114,33-37 (2000).
    [CrossRef]
  13. J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, "Silicon nanocrystals: Size matters," Adv. Mat. 17,795-803 (2005).
    [CrossRef]
  14. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, "Field-effect electroluminescence in silicon nanocrystals," Nature Mater. 4,143-146 (2005).
    [CrossRef]
  15. P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, "Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures," Mater. Sci. Engin. B 69,345-349 (2000).
    [CrossRef]
  16. K. Chen, X. Huang, J. Xu, and D. Feng, "Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures," Appl. Phys. Lett. 26,2069-2071 (1992).
    [CrossRef]
  17. A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
    [CrossRef]
  18. K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
    [CrossRef]
  19. Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
    [CrossRef]
  20. L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
    [CrossRef]
  21. D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
    [CrossRef]
  22. R. H. Yeh, T. R. Yu, T. C. Chung, S. Y. Lo, and J. W. Hong, "Optoelectronic characteristics of direct-current and alternating-current white thin film light emitting diodes based on hydrogenated amorphous silicon nitride film," IEEE Trans. Electron Devices 55, 978-985 (2008).
    [CrossRef]
  23. R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
    [CrossRef]

2008 (5)

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

R. H. Yeh, T. R. Yu, T. C. Chung, S. Y. Lo, and J. W. Hong, "Optoelectronic characteristics of direct-current and alternating-current white thin film light emitting diodes based on hydrogenated amorphous silicon nitride film," IEEE Trans. Electron Devices 55, 978-985 (2008).
[CrossRef]

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

2007 (3)

J. M. Shainline and J. Xu, "Silicon as an emissive optical medium," Laser Photon. Rev. 1, 334-348 (2007).
[CrossRef]

G. R. Lin, C. J. Lin, and C. K. Lin, "Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids," Opt. Express 15, 2555-2563 (2007).
[CrossRef] [PubMed]

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

2006 (2)

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

2005 (4)

K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
[CrossRef]

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, "Silicon nanocrystals: Size matters," Adv. Mat. 17,795-803 (2005).
[CrossRef]

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, "Field-effect electroluminescence in silicon nanocrystals," Nature Mater. 4,143-146 (2005).
[CrossRef]

C. A. Barrios and M. Lipson, "Electrically driven silicon resonant light emitting device based on slot-waveguide," Opt. Express 13, 10092-10101 (2005).
[CrossRef] [PubMed]

2004 (1)

P. M. Fauchet, "Monolithic silicon light sources," Top. Appl. Phys. 94, 177-199 (2004).

2003 (2)

L. Pavesi, "Will silicon be the photonic material of the third millenium," J. Phys.: Condens. Matter 15, R1169-R1196 (2003).
[CrossRef]

M. Sopinskyy and V. Khomchenko, "Electroluminescence in SiOx films and SiOx-film-based system," Curr. Opin. Solid State Mater. Sci. 7,97-109 (2003).
[CrossRef]

2000 (4)

P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, "Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures," Mater. Sci. Engin. B 69,345-349 (2000).
[CrossRef]

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Z. Gaburro, G. Pucker, P. Bellutti, and L. Pavesi, "Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers," Solid State Commun. 114,33-37 (2000).
[CrossRef]

P. Photopoulos and A. G. Nassipoulou, "Room and low temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers," Appl. Phys. Lett. 77, 1816-1818 (2000).
[CrossRef]

1999 (1)

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots :the role of oxygen," Phys. Rev. Lett. 82,197-200 (1999).
[CrossRef]

1992 (1)

K. Chen, X. Huang, J. Xu, and D. Feng, "Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures," Appl. Phys. Lett. 26,2069-2071 (1992).
[CrossRef]

Allan, G.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots :the role of oxygen," Phys. Rev. Lett. 82,197-200 (1999).
[CrossRef]

Atwater, H. A.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, "Field-effect electroluminescence in silicon nanocrystals," Nature Mater. 4,143-146 (2005).
[CrossRef]

Barrios, C. A.

Basu, S. N.

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

Bellutti, P.

Z. Gaburro, G. Pucker, P. Bellutti, and L. Pavesi, "Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers," Solid State Commun. 114,33-37 (2000).
[CrossRef]

Bongiorno, C.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Bourianoff, G. I.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, "Field-effect electroluminescence in silicon nanocrystals," Nature Mater. 4,143-146 (2005).
[CrossRef]

Canino, A.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Cen, Z.

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

Chen, D.

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Chen, D. Y.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

Chen, K.

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, "Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures," Appl. Phys. Lett. 26,2069-2071 (1992).
[CrossRef]

Chen, K. J.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

Cho, K. S.

K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
[CrossRef]

Chung, T. C.

R. H. Yeh, T. R. Yu, T. C. Chung, S. Y. Lo, and J. W. Hong, "Optoelectronic characteristics of direct-current and alternating-current white thin film light emitting diodes based on hydrogenated amorphous silicon nitride film," IEEE Trans. Electron Devices 55, 978-985 (2008).
[CrossRef]

Crupi, I.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Dal Negro, L.

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

Delerue, C.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots :the role of oxygen," Phys. Rev. Lett. 82,197-200 (1999).
[CrossRef]

Diener, J.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Ding, H. L.

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

Dong, H. P.

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

Fallica, P. G.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Fauchet, P. M.

P. M. Fauchet, "Monolithic silicon light sources," Top. Appl. Phys. 94, 177-199 (2004).

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots :the role of oxygen," Phys. Rev. Lett. 82,197-200 (1999).
[CrossRef]

Feng, D.

K. Chen, X. Huang, J. Xu, and D. Feng, "Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures," Appl. Phys. Lett. 26,2069-2071 (1992).
[CrossRef]

Fronzo, G.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Gaburro, Z.

Z. Gaburro, G. Pucker, P. Bellutti, and L. Pavesi, "Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers," Solid State Commun. 114,33-37 (2000).
[CrossRef]

Gosele, U.

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, "Silicon nanocrystals: Size matters," Adv. Mat. 17,795-803 (2005).
[CrossRef]

Grom, G. F.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Han, P. G.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

Heitmann, J.

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, "Silicon nanocrystals: Size matters," Adv. Mat. 17,795-803 (2005).
[CrossRef]

Hong, J. W.

R. H. Yeh, T. R. Yu, T. C. Chung, S. Y. Lo, and J. W. Hong, "Optoelectronic characteristics of direct-current and alternating-current white thin film light emitting diodes based on hydrogenated amorphous silicon nitride film," IEEE Trans. Electron Devices 55, 978-985 (2008).
[CrossRef]

Huang, R.

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

Huang, X.

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, "Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures," Appl. Phys. Lett. 26,2069-2071 (1992).
[CrossRef]

Iacona, F.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Irrera, A.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Jorne, J.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots :the role of oxygen," Phys. Rev. Lett. 82,197-200 (1999).
[CrossRef]

Khomchenko, V.

M. Sopinskyy and V. Khomchenko, "Electroluminescence in SiOx films and SiOx-film-based system," Curr. Opin. Solid State Mater. Sci. 7,97-109 (2003).
[CrossRef]

Kim, K. H.

K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
[CrossRef]

Kim, T. Y.

K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
[CrossRef]

Koch, F.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Kouvatsos, D. N.

P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, "Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures," Mater. Sci. Engin. B 69,345-349 (2000).
[CrossRef]

Kovalev, D.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Labbe, H. J.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Li, R.

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

Li, W.

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

Lin, C. J.

Lin, C. K.

Lin, G. R.

Lipson, M.

Liu, Y.

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

Lo, S. Y.

R. H. Yeh, T. R. Yu, T. C. Chung, S. Y. Lo, and J. W. Hong, "Optoelectronic characteristics of direct-current and alternating-current white thin film light emitting diodes based on hydrogenated amorphous silicon nitride film," IEEE Trans. Electron Devices 55, 978-985 (2008).
[CrossRef]

Lockwood, D. J.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Ma, Z.

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

Ma, Z. Y.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

McCaffrey, J. P.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Mei, J.

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Muller, F.

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, "Silicon nanocrystals: Size matters," Adv. Mat. 17,795-803 (2005).
[CrossRef]

Nassiopoulou, A. G.

P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, "Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures," Mater. Sci. Engin. B 69,345-349 (2000).
[CrossRef]

Nassipoulou, A. G.

P. Photopoulos and A. G. Nassipoulou, "Room and low temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers," Appl. Phys. Lett. 77, 1816-1818 (2000).
[CrossRef]

Park, N. M.

K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
[CrossRef]

Pavesi, L.

L. Pavesi, "Will silicon be the photonic material of the third millenium," J. Phys.: Condens. Matter 15, R1169-R1196 (2003).
[CrossRef]

Z. Gaburro, G. Pucker, P. Bellutti, and L. Pavesi, "Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers," Solid State Commun. 114,33-37 (2000).
[CrossRef]

Photopoulos, P.

P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, "Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures," Mater. Sci. Engin. B 69,345-349 (2000).
[CrossRef]

P. Photopoulos and A. G. Nassipoulou, "Room and low temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers," Appl. Phys. Lett. 77, 1816-1818 (2000).
[CrossRef]

Piana, A.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Presti, C. D.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Priolo, F.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Pucker, G.

Z. Gaburro, G. Pucker, P. Bellutti, and L. Pavesi, "Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers," Solid State Commun. 114,33-37 (2000).
[CrossRef]

Rui, Y.

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Sanfilippo, D.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Shainline, J. M.

J. M. Shainline and J. Xu, "Silicon as an emissive optical medium," Laser Photon. Rev. 1, 334-348 (2007).
[CrossRef]

Shi, W. H.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

Shin, J. H.

K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
[CrossRef]

Sopinskyy, M.

M. Sopinskyy and V. Khomchenko, "Electroluminescence in SiOx films and SiOx-film-based system," Curr. Opin. Solid State Mater. Sci. 7,97-109 (2003).
[CrossRef]

Stefano, G. D.

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Sung, G. Y.

K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
[CrossRef]

Travlos, A.

P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, "Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures," Mater. Sci. Engin. B 69,345-349 (2000).
[CrossRef]

Tsybeskov, L.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Walters, R. J.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, "Field-effect electroluminescence in silicon nanocrystals," Nature Mater. 4,143-146 (2005).
[CrossRef]

Wang, D. Q.

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

Wang, Q. M.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

Wang, X.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

Warga, J.

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

Wei, D. Y.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

White, B.

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Wolkin, M. V.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots :the role of oxygen," Phys. Rev. Lett. 82,197-200 (1999).
[CrossRef]

Xu, J.

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

J. M. Shainline and J. Xu, "Silicon as an emissive optical medium," Laser Photon. Rev. 1, 334-348 (2007).
[CrossRef]

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, "Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures," Appl. Phys. Lett. 26,2069-2071 (1992).
[CrossRef]

Xu, L.

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

Yeh, R. H.

R. H. Yeh, T. R. Yu, T. C. Chung, S. Y. Lo, and J. W. Hong, "Optoelectronic characteristics of direct-current and alternating-current white thin film light emitting diodes based on hydrogenated amorphous silicon nitride film," IEEE Trans. Electron Devices 55, 978-985 (2008).
[CrossRef]

Yu, T. R.

R. H. Yeh, T. R. Yu, T. C. Chung, S. Y. Lo, and J. W. Hong, "Optoelectronic characteristics of direct-current and alternating-current white thin film light emitting diodes based on hydrogenated amorphous silicon nitride film," IEEE Trans. Electron Devices 55, 978-985 (2008).
[CrossRef]

Zacharias, M.

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, "Silicon nanocrystals: Size matters," Adv. Mat. 17,795-803 (2005).
[CrossRef]

Zhou, L.

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Adv. Mat. (1)

J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, "Silicon nanocrystals: Size matters," Adv. Mat. 17,795-803 (2005).
[CrossRef]

Appl. Phys. Lett. (7)

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

K. Chen, X. Huang, J. Xu, and D. Feng, "Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures," Appl. Phys. Lett. 26,2069-2071 (1992).
[CrossRef]

P. Photopoulos and A. G. Nassipoulou, "Room and low temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers," Appl. Phys. Lett. 77, 1816-1818 (2000).
[CrossRef]

K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, "High efficiency visible electroluminscence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer," Appl. Phys. Lett. 86,071909 (2005).
[CrossRef]

Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, "Visible light emission from single layer Si nanodots fabricated by laser irradiation method," Appl. Phys. Lett. 89,163107 (2006).
[CrossRef]

L. Dal Negro, R. Li, J. Warga, and S. N. Basu, "Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures," Appl. Phys. Lett. 92, 181105 (2008).
[CrossRef]

R. Huang, H. P. Dong, D. Q. Wang, K. J. Chen, H. L. Ding, X. Wang, W. Li, J. Xu, and Z. Y. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices," Appl. Phys. Lett. 92,181106 (2008).
[CrossRef]

Curr. Opin. Solid State Mater. Sci. (1)

M. Sopinskyy and V. Khomchenko, "Electroluminescence in SiOx films and SiOx-film-based system," Curr. Opin. Solid State Mater. Sci. 7,97-109 (2003).
[CrossRef]

IEEE Trans. Electron Devices (1)

R. H. Yeh, T. R. Yu, T. C. Chung, S. Y. Lo, and J. W. Hong, "Optoelectronic characteristics of direct-current and alternating-current white thin film light emitting diodes based on hydrogenated amorphous silicon nitride film," IEEE Trans. Electron Devices 55, 978-985 (2008).
[CrossRef]

J. Phys.: Condens. Matter (1)

L. Pavesi, "Will silicon be the photonic material of the third millenium," J. Phys.: Condens. Matter 15, R1169-R1196 (2003).
[CrossRef]

Laser Photon. Rev. (1)

J. M. Shainline and J. Xu, "Silicon as an emissive optical medium," Laser Photon. Rev. 1, 334-348 (2007).
[CrossRef]

Mater. Lett. (1)

J. Xu, Y. Rui, D. Chen, J. Mei, L. Zhou, Z. Cen, W. Li, and K. Chen, "Annealing effect on structures and luminescence of amorphous SiN films," Mater. Lett. 6, 5010-5013 (2007).
[CrossRef]

Mater. Sci. Engin. B (1)

P. Photopoulos, A. G. Nassiopoulou, D. N. Kouvatsos, and A. Travlos, "Photo- and electroluminescence from nanocrystalline silicon single and multilayer structures," Mater. Sci. Engin. B 69,345-349 (2000).
[CrossRef]

Nanotech. (1)

A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Fronzo, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, "Electroluminescence and transport properties in amorphous silicon nanostructures," Nanotech. 17,1428-1436 (2006).
[CrossRef]

Nature (1)

G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, "Ordering and self-organization in nanocrystalline silicon," Nature 407,358-361 (2000).
[CrossRef] [PubMed]

Nature Mater. (1)

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, "Field-effect electroluminescence in silicon nanocrystals," Nature Mater. 4,143-146 (2005).
[CrossRef]

Opt. Express (2)

Phys. Rev. Lett. (1)

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots :the role of oxygen," Phys. Rev. Lett. 82,197-200 (1999).
[CrossRef]

Semicond. Sci. Technol. (1)

D. Y. Chen, D. Y. Wei, J. Xu, P. G. Han, X. Wang, Z. Y. Ma, K. J. Chen, W. H. Shi, and Q. M. Wang, "Enhancement of electroluminescence in p-i-n structures with nanocrystalline Si/SiO2 multilayers," Semicond. Sci. Technol. 23, 015013 (2008).
[CrossRef]

Solid State Commun. (1)

Z. Gaburro, G. Pucker, P. Bellutti, and L. Pavesi, "Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers," Solid State Commun. 114,33-37 (2000).
[CrossRef]

Top. Appl. Phys. (1)

P. M. Fauchet, "Monolithic silicon light sources," Top. Appl. Phys. 94, 177-199 (2004).

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Figures (6)

Fig. 1.
Fig. 1.

(a)Planar TEM images for laser crystallized SiN/Si QDs/SiN sandwiched structures of Sample A. Inset of figure (a) is the high resolution TEM image and the formation of Si QDs can be clearly identified. (b) The cross-sectional TEM image of the same sample which shows the sandwiched structures and the size of Si QDs can be well confined by the film thickness.

Fig. 2.
Fig. 2.

Electroluminescence (EL) spectra of as-deposited sample and laser crystallized sample under laser fluence of 0.5 J/cm2 without the subsequently thermal annealing. The EL signals were measured by applied the gate voltage of -10V.

Fig. 3.
Fig. 3.

(a)EL spectra of sample A and (b) sample B after laser crystallization and the subsequently thermal annealing at 700°C for 1hr. The EL signals were measured under the various gate voltages. Dot line in (a) indicates the slight blue shift of the band peak energy with increasing the gate voltage.

Fig. 4.
Fig. 4.

(a) Current-voltage plots of sample A and B, respectively. (b) Fowler-Nordheim plots of two samples in the forward bias region (negative voltage).

Fig. 5.
Fig. 5.

The plots of the integrated EL intensity as a function of injection current for sample A and sample B, respectively.

Fig. 6.
Fig. 6.

Room temperature photoluminescence spectrum for sample A and sample B after laser crystallization and subsequently thermal annealing.

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