Abstract

We report an electrically pumped distributed feedback silicon evanescent laser. The laser operates continuous wave with a single mode output at 1600 nm. The laser threshold is 25 mA with a maximum output power of 5.4 mW at 10 °C. The maximum operating temperature and minimum line width of the laser are 50 °C, and 3.6 MHz, respectively.

© 2008 Optical Society of America

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References

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  1. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210 (2006).
    [CrossRef] [PubMed]
  2. J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J. -M. Fedeli, C. Lagahe, and R. Baets, "Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit," Opt. Express 15, 6744-6749 (2007).
    [CrossRef] [PubMed]
  3. T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto, and S. Arai, "GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate," Opt. Express 14, 8184-8188 (2006) http://www.opticsinfobase.org/abstract.cfm?URI=oe-14-18-8184.
    [CrossRef] [PubMed]
  4. G. Morthier, P. Vankwikelberge, Handbook of Distributed Feedback Laser Diodes (Arctech House, Norwood, MA, 1997).
  5. A. Liu, L. Liao, D. Rubin, J. Basak, H. Nguyen, Y. Chetrit, R. Cohen, N. Izhaky, and M. Paniccia, " High-Speed Silicon Modulator for Future VLSI Interconnect," in Integrated Photonics and Nanophotonics Research and Applications, OSA Technical Digest (CD) (Optical Society of America, 2007), paper IMD3.
  6. H. Park, Y.-H. Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Pannicia, J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector," Opt. Express 15, (2007).
    [PubMed]
  7. H. Park, A. W. Fang, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, "40 C Continuous-Wave Electrically Pumped Hybrid Silicon Evanescent Laser," International Semconductor Laser Conference 2006 (ISLC 2006), post deadline paper, (2006).
  8. H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, and J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent waveguide photodetector," Opt. Express 15, 6044-6052 (2007).
    [CrossRef] [PubMed]
  9. A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, "Integrated AlGaInAs-silicon evanescent race track laser and photodetector," Opt. Express 15, 2315-2322 (2007).
    [CrossRef] [PubMed]
  10. M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, "Experimental and theoretical thermal analysis of a Hybrid Silicon Evanescent Laser," Opt. Express 15, 15041-15046 (2007).
    [CrossRef] [PubMed]
  11. D. Derrickson, Fiber optic test and measurement (Prentice Hall,1998), page185.

2007 (5)

2006 (2)

Arai, S.

Baets, R.

Bowers, J. E.

Cohen, O.

Di Cioccio, L.

Fang, A. W.

Fedeli, J. -M.

Jones, R.

Kuo, Y.-H.

H. Park, Y.-H. Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Pannicia, J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector," Opt. Express 15, (2007).
[PubMed]

Lagahe, C.

Maruyama, T.

Miura, K.

Nishimoto, Y.

Okumura, T.

Paniccia, M. J.

Pannicia, M. J.

H. Park, Y.-H. Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Pannicia, J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector," Opt. Express 15, (2007).
[PubMed]

Park, H.

Raday, O.

Regreny, P.

Rojo Romeo, P.

Sakamoto, S.

Seassal, C.

Sysak, M. N.

Van Campenhout, J.

Van Thourhout, D.

Verstuyft, S.

Opt. Express (7)

H. Park, Y.-H. Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Pannicia, J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector," Opt. Express 15, (2007).
[PubMed]

T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto, and S. Arai, "GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate," Opt. Express 14, 8184-8188 (2006) http://www.opticsinfobase.org/abstract.cfm?URI=oe-14-18-8184.
[CrossRef] [PubMed]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser," Opt. Express 14, 9203-9210 (2006).
[CrossRef] [PubMed]

A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, "Integrated AlGaInAs-silicon evanescent race track laser and photodetector," Opt. Express 15, 2315-2322 (2007).
[CrossRef] [PubMed]

H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, and J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent waveguide photodetector," Opt. Express 15, 6044-6052 (2007).
[CrossRef] [PubMed]

J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J. -M. Fedeli, C. Lagahe, and R. Baets, "Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit," Opt. Express 15, 6744-6749 (2007).
[CrossRef] [PubMed]

M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, "Experimental and theoretical thermal analysis of a Hybrid Silicon Evanescent Laser," Opt. Express 15, 15041-15046 (2007).
[CrossRef] [PubMed]

Other (4)

H. Park, A. W. Fang, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, "40 C Continuous-Wave Electrically Pumped Hybrid Silicon Evanescent Laser," International Semconductor Laser Conference 2006 (ISLC 2006), post deadline paper, (2006).

D. Derrickson, Fiber optic test and measurement (Prentice Hall,1998), page185.

G. Morthier, P. Vankwikelberge, Handbook of Distributed Feedback Laser Diodes (Arctech House, Norwood, MA, 1997).

A. Liu, L. Liao, D. Rubin, J. Basak, H. Nguyen, Y. Chetrit, R. Cohen, N. Izhaky, and M. Paniccia, " High-Speed Silicon Modulator for Future VLSI Interconnect," in Integrated Photonics and Nanophotonics Research and Applications, OSA Technical Digest (CD) (Optical Society of America, 2007), paper IMD3.

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Figures (7)

Fig. 1.
Fig. 1.

A silicon terabit transmitter with 25 DFB-SELs externally modulated at 40 Gb/s.

Fig. 2.
Fig. 2.

(a) DFB-SEL longitudinal cross section diagram (b) Scanning electron microscope image of DFB-SEL longitudinal cross section.

Fig. 3.
Fig. 3.

(top) DFB-SEL device layout. (bottom) Microscope image of DFB-SEL and integrated silicon evanescent photo-detectors.

Fig. 4.
Fig. 4.

- L-I-V curve for stage temperatures of 10 °C to 50 °C.

Fig. 5.
Fig. 5.

The lasing spectrum at 90 mA injection current with a 50 dB side mode extinction ratio. (inset) The lasing spectrum over a 100 nm span showing single mode lasing.

Fig. 6.
Fig. 6.

(a) continuous wave lasing spectrum for various current levels. (b) Continuous wave lasing wavelength versus electrical dissipated power. (c) Pulsed lasing wavelength versus stage temperature.

Fig. 7.
Fig. 7.

(a) Delayed-self heterodyned line width trace at 1.8 mW laser output power. (b) The laser line width versus the inverse laser output power.

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