Abstract

We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO2 surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co2.8 nm-SiO2-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.

© 2008 Optical Society of America

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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]
  6. W. S. Park and H. S. Cho, "Measurement of fine 6-degrees-of-freedom displacement of rigid bodies through splitting a laser beam: experimental investigation," Opt. Eng. 41, 860-871 (2002).
    [CrossRef]
  7. H. Aguas, L. Pereira L, L. Raniero, D. Costa, E. Fortunato and R. Martins, "Investigation of a-Si: H 1D MIS position sensitive detectors for application in 3D sensors," J. Non-Cryst. Solids 352, 1787-1791 (2006).
    [CrossRef]
  8. R. H. Willens, "Photoelectronic and electronic properties of Ti/Si amorphous superlattices," Appl. Phys. Lett. 49, 663-665 (1986).
    [CrossRef]
  9. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate," Appl. Phys. Lett. 49, 1537-1539 (1986).
    [CrossRef]
  10. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti," Appl. Phys. Lett. 49, 1608-1610 (1986).
    [CrossRef]
  11. R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, "High resolution photovoltaic position sensing with Ti/Si superlattices," Appl. Phys. Lett. 49, 1647-1648 (1986).
    [CrossRef]
  12. J. Henry and J. Livingstone, "A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures," J. Mater. Sci.: Mater. Electron. 12, 387-393 (2001).
    [CrossRef]
  13. J. Henry and J. Livingstone, "Optimizing the response of Schottky barrier position sensitive detectors," J. Phys. D: Appl. Phys. 37, 3180-3184 (2004).
    [CrossRef]
  14. S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, "Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si," J. Phys. D: Appl. Phys. 40, 5580-5583 (2007).
    [CrossRef]
  15. H. C. Card and E. H. Rhoderick, "Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes," J. Phys. D: Appl. Phys. 4, 1589-1601 (1971).
    [CrossRef]
  16. E. J. Charlson and J. C. Lien, "An Al p-silicon MOS photovoltaic cell," J. Appl. Phys. 46, 3982-3987 (1975).
    [CrossRef]
  17. D. R. Lillington and W. G. Townsend, "Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cells," Appl. Phys. Lett. 28, 97-98 (1976).
    [CrossRef]
  18. R. B. Godfrey and M. A. Green, "655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells," Appl. Phys. Lett. 34, 790-793 (1979).
    [CrossRef]
  19. A. K. Srivastava, S. Guha, and B. W. Arora, "Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cells," Appl. Phys. Lett. 40, 43-45 (1982).
    [CrossRef]
  20. A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
    [CrossRef]
  21. R. S. Markiewicz and L. A. Harris, "Two-dimensional resistivity of ultrathin metal films," Phys. Rev. Lett. 46, 1149-1153 (1981).
    [CrossRef]
  22. R. J. Stirn and Y. C. M. Yeh, "A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell," Appl. Phys. Lett. 27, 95-98 (1975).
    [CrossRef]
  23. E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, "Thin film position sensitive detector based on amorphous silicon p-i-n diode," Rev. Sci. Instrum. 65,3784-3786 (1994).
    [CrossRef]
  24. E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, "Large-area 1D thin-film position-sensitive detector with high detection resolution," Sens. Actuators A 51,135-142 (1996).
  25. R. Martins and E. Fortunato, "Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors," Thin Solid Films 337, 158-162 (1999).
    [CrossRef]
  26. H. C. Card and E. S. Yang, "MIS-Schottky theory under conditions of optical carrier generation in solar cells," Appl. Phys. Lett. 29, 51-53 (1976).
    [CrossRef]
  27. J. Shewchun, R. Singh and M. A. Green, "Theory of metal-insulator-semiconductor solar cells," J. Appl. Phys. 48, 765-770 (1977).
    [CrossRef]
  28. D. L. Pulfrey, "MIS solar cells: a review," IEEE Trans. Electron Devices 25, 1308-1317 (1978).
    [CrossRef]
  29. J. Shewchun, D. Burk and M. B. Spitzer, "MIS and SIS solar cells," IEEE Trans. Electron Devices 27, 705-716 (1980).
    [CrossRef]
  30. J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki and U. Diebold, "Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate," J. Appl. Phys. 91, 8411-8413 (2002).
    [CrossRef]
  31. P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
    [CrossRef]
  32. N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
    [CrossRef]
  33. H. B. De Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, "Transport and magnetotransport transition of thin Co films grown on Si," Phys. Status Solidi A 201, 2361-2365 (2004).
    [CrossRef]
  34. S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "Lateral photovoltaic effect and magnetoresistance observed in Co-SiO2-Si metal-oxide-semiconductor structures," J. Phys. D: Appl. Phys. 40, 6926-6929 (2007).
    [CrossRef]

2007 (2)

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, "Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si," J. Phys. D: Appl. Phys. 40, 5580-5583 (2007).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "Lateral photovoltaic effect and magnetoresistance observed in Co-SiO2-Si metal-oxide-semiconductor structures," J. Phys. D: Appl. Phys. 40, 6926-6929 (2007).
[CrossRef]

2006 (1)

H. Aguas, L. Pereira L, L. Raniero, D. Costa, E. Fortunato and R. Martins, "Investigation of a-Si: H 1D MIS position sensitive detectors for application in 3D sensors," J. Non-Cryst. Solids 352, 1787-1791 (2006).
[CrossRef]

2004 (2)

J. Henry and J. Livingstone, "Optimizing the response of Schottky barrier position sensitive detectors," J. Phys. D: Appl. Phys. 37, 3180-3184 (2004).
[CrossRef]

H. B. De Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, "Transport and magnetotransport transition of thin Co films grown on Si," Phys. Status Solidi A 201, 2361-2365 (2004).
[CrossRef]

2002 (2)

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki and U. Diebold, "Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate," J. Appl. Phys. 91, 8411-8413 (2002).
[CrossRef]

W. S. Park and H. S. Cho, "Measurement of fine 6-degrees-of-freedom displacement of rigid bodies through splitting a laser beam: experimental investigation," Opt. Eng. 41, 860-871 (2002).
[CrossRef]

2001 (2)

J. Henry and J. Livingstone, "A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures," J. Mater. Sci.: Mater. Electron. 12, 387-393 (2001).
[CrossRef]

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

2000 (1)

1999 (1)

R. Martins and E. Fortunato, "Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors," Thin Solid Films 337, 158-162 (1999).
[CrossRef]

1998 (1)

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

1997 (2)

D. W. Buhler, T. R. Oxland, and L. P. Nolte, "Design and evaluation of a device for measuring three-dimensional micromotions of press-fit femoral stem prostheses," Med. Eng. Phys. 19, 187-199 (1997).
[CrossRef] [PubMed]

K. J. Kaufmann, "Position-sensitive detectors develop into high-tech tailors," Photon. Spectra 31, 167 (1997 May).

1996 (1)

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, "Large-area 1D thin-film position-sensitive detector with high detection resolution," Sens. Actuators A 51,135-142 (1996).

1994 (1)

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, "Thin film position sensitive detector based on amorphous silicon p-i-n diode," Rev. Sci. Instrum. 65,3784-3786 (1994).
[CrossRef]

1992 (1)

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
[CrossRef]

1990 (1)

A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
[CrossRef]

1986 (4)

R. H. Willens, "Photoelectronic and electronic properties of Ti/Si amorphous superlattices," Appl. Phys. Lett. 49, 663-665 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate," Appl. Phys. Lett. 49, 1537-1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti," Appl. Phys. Lett. 49, 1608-1610 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, "High resolution photovoltaic position sensing with Ti/Si superlattices," Appl. Phys. Lett. 49, 1647-1648 (1986).
[CrossRef]

1982 (1)

A. K. Srivastava, S. Guha, and B. W. Arora, "Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cells," Appl. Phys. Lett. 40, 43-45 (1982).
[CrossRef]

1981 (1)

R. S. Markiewicz and L. A. Harris, "Two-dimensional resistivity of ultrathin metal films," Phys. Rev. Lett. 46, 1149-1153 (1981).
[CrossRef]

1980 (1)

J. Shewchun, D. Burk and M. B. Spitzer, "MIS and SIS solar cells," IEEE Trans. Electron Devices 27, 705-716 (1980).
[CrossRef]

1979 (1)

R. B. Godfrey and M. A. Green, "655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells," Appl. Phys. Lett. 34, 790-793 (1979).
[CrossRef]

1978 (1)

D. L. Pulfrey, "MIS solar cells: a review," IEEE Trans. Electron Devices 25, 1308-1317 (1978).
[CrossRef]

1977 (1)

J. Shewchun, R. Singh and M. A. Green, "Theory of metal-insulator-semiconductor solar cells," J. Appl. Phys. 48, 765-770 (1977).
[CrossRef]

1976 (2)

H. C. Card and E. S. Yang, "MIS-Schottky theory under conditions of optical carrier generation in solar cells," Appl. Phys. Lett. 29, 51-53 (1976).
[CrossRef]

D. R. Lillington and W. G. Townsend, "Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cells," Appl. Phys. Lett. 28, 97-98 (1976).
[CrossRef]

1975 (2)

R. J. Stirn and Y. C. M. Yeh, "A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell," Appl. Phys. Lett. 27, 95-98 (1975).
[CrossRef]

E. J. Charlson and J. C. Lien, "An Al p-silicon MOS photovoltaic cell," J. Appl. Phys. 46, 3982-3987 (1975).
[CrossRef]

1971 (1)

H. C. Card and E. H. Rhoderick, "Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes," J. Phys. D: Appl. Phys. 4, 1589-1601 (1971).
[CrossRef]

Aguas, H.

H. Aguas, L. Pereira L, L. Raniero, D. Costa, E. Fortunato and R. Martins, "Investigation of a-Si: H 1D MIS position sensitive detectors for application in 3D sensors," J. Non-Cryst. Solids 352, 1787-1791 (2006).
[CrossRef]

Antoniadis, D. A.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
[CrossRef]

Arora, B. W.

A. K. Srivastava, S. Guha, and B. W. Arora, "Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cells," Appl. Phys. Lett. 40, 43-45 (1982).
[CrossRef]

Bae, J. H.

Bagwell, P. F.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
[CrossRef]

Beaumont, S. P.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

Berndt, D.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Bethea, C. G.

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, "High resolution photovoltaic position sensing with Ti/Si superlattices," Appl. Phys. Lett. 49, 1647-1648 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate," Appl. Phys. Lett. 49, 1537-1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti," Appl. Phys. Lett. 49, 1608-1610 (1986).
[CrossRef]

Borges, J.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Brasen, D.

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, "High resolution photovoltaic position sensing with Ti/Si superlattices," Appl. Phys. Lett. 49, 1647-1648 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti," Appl. Phys. Lett. 49, 1608-1610 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate," Appl. Phys. Lett. 49, 1537-1539 (1986).
[CrossRef]

Brasil, M. J. S. P.

H. B. De Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, "Transport and magnetotransport transition of thin Co films grown on Si," Phys. Status Solidi A 201, 2361-2365 (2004).
[CrossRef]

Buhler, D. W.

D. W. Buhler, T. R. Oxland, and L. P. Nolte, "Design and evaluation of a device for measuring three-dimensional micromotions of press-fit femoral stem prostheses," Med. Eng. Phys. 19, 187-199 (1997).
[CrossRef] [PubMed]

Burk, D.

J. Shewchun, D. Burk and M. B. Spitzer, "MIS and SIS solar cells," IEEE Trans. Electron Devices 27, 705-716 (1980).
[CrossRef]

Card, H. C.

H. C. Card and E. S. Yang, "MIS-Schottky theory under conditions of optical carrier generation in solar cells," Appl. Phys. Lett. 29, 51-53 (1976).
[CrossRef]

H. C. Card and E. H. Rhoderick, "Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes," J. Phys. D: Appl. Phys. 4, 1589-1601 (1971).
[CrossRef]

Charlson, E. J.

E. J. Charlson and J. C. Lien, "An Al p-silicon MOS photovoltaic cell," J. Appl. Phys. 46, 3982-3987 (1975).
[CrossRef]

Cho, H. S.

W. S. Park and H. S. Cho, "Measurement of fine 6-degrees-of-freedom displacement of rigid bodies through splitting a laser beam: experimental investigation," Opt. Eng. 41, 860-871 (2002).
[CrossRef]

Dai, J.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki and U. Diebold, "Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate," J. Appl. Phys. 91, 8411-8413 (2002).
[CrossRef]

De Carvalho, H. B.

H. B. De Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, "Transport and magnetotransport transition of thin Co films grown on Si," Phys. Status Solidi A 201, 2361-2365 (2004).
[CrossRef]

Denardin, J. C.

H. B. De Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, "Transport and magnetotransport transition of thin Co films grown on Si," Phys. Status Solidi A 201, 2361-2365 (2004).
[CrossRef]

Diebold, U.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki and U. Diebold, "Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate," J. Appl. Phys. 91, 8411-8413 (2002).
[CrossRef]

Fernandes, L.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, "Large-area 1D thin-film position-sensitive detector with high detection resolution," Sens. Actuators A 51,135-142 (1996).

Ferreiral, I.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Fortunato, E.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

R. Martins and E. Fortunato, "Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors," Thin Solid Films 337, 158-162 (1999).
[CrossRef]

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, "Large-area 1D thin-film position-sensitive detector with high detection resolution," Sens. Actuators A 51,135-142 (1996).

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, "Thin film position sensitive detector based on amorphous silicon p-i-n diode," Rev. Sci. Instrum. 65,3784-3786 (1994).
[CrossRef]

Gallagher, B. L.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

Gilmore, D. L.

A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
[CrossRef]

Godfrey, R. B.

R. B. Godfrey and M. A. Green, "655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells," Appl. Phys. Lett. 34, 790-793 (1979).
[CrossRef]

Green, M. A.

R. B. Godfrey and M. A. Green, "655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells," Appl. Phys. Lett. 34, 790-793 (1979).
[CrossRef]

J. Shewchun, R. Singh and M. A. Green, "Theory of metal-insulator-semiconductor solar cells," J. Appl. Phys. 48, 765-770 (1977).
[CrossRef]

Groth, A.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Gu, Y. Z.

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "Lateral photovoltaic effect and magnetoresistance observed in Co-SiO2-Si metal-oxide-semiconductor structures," J. Phys. D: Appl. Phys. 40, 6926-6929 (2007).
[CrossRef]

Guha, S.

A. K. Srivastava, S. Guha, and B. W. Arora, "Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cells," Appl. Phys. Lett. 40, 43-45 (1982).
[CrossRef]

Guimaraes, N.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Harris, L. A.

R. S. Markiewicz and L. A. Harris, "Two-dimensional resistivity of ultrathin metal films," Phys. Rev. Lett. 46, 1149-1153 (1981).
[CrossRef]

Henini, M.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

Henry, J.

J. Henry and J. Livingstone, "Optimizing the response of Schottky barrier position sensitive detectors," J. Phys. D: Appl. Phys. 37, 3180-3184 (2004).
[CrossRef]

J. Henry and J. Livingstone, "A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures," J. Mater. Sci.: Mater. Electron. 12, 387-393 (2001).
[CrossRef]

Howson, M. A.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

Jeong, S.

Jose, G.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Kastner, M. A.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
[CrossRef]

Kaufmann, K. J.

K. J. Kaufmann, "Position-sensitive detectors develop into high-tech tailors," Photon. Spectra 31, 167 (1997 May).

Kim, J.

Kim, M.

Knobel, M.

H. B. De Carvalho, M. J. S. P. Brasil, J. C. Denardin, and M. Knobel, "Transport and magnetotransport transition of thin Co films grown on Si," Phys. Status Solidi A 201, 2361-2365 (2004).
[CrossRef]

Kumar, A.

A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
[CrossRef]

Kwon, J. H.

Lavareda, G.

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, "Large-area 1D thin-film position-sensitive detector with high detection resolution," Sens. Actuators A 51,135-142 (1996).

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, "Thin film position sensitive detector based on amorphous silicon p-i-n diode," Rev. Sci. Instrum. 65,3784-3786 (1994).
[CrossRef]

Lee, H.

Levine, B. F.

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, "High resolution photovoltaic position sensing with Ti/Si superlattices," Appl. Phys. Lett. 49, 1647-1648 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate," Appl. Phys. Lett. 49, 1537-1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti," Appl. Phys. Lett. 49, 1608-1610 (1986).
[CrossRef]

Lewis, N. S.

A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
[CrossRef]

Lien, J. C.

E. J. Charlson and J. C. Lien, "An Al p-silicon MOS photovoltaic cell," J. Appl. Phys. 46, 3982-3987 (1975).
[CrossRef]

Lillington, D. R.

D. R. Lillington and W. G. Townsend, "Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cells," Appl. Phys. Lett. 28, 97-98 (1976).
[CrossRef]

Livingstone, J.

J. Henry and J. Livingstone, "Optimizing the response of Schottky barrier position sensitive detectors," J. Phys. D: Appl. Phys. 37, 3180-3184 (2004).
[CrossRef]

J. Henry and J. Livingstone, "A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures," J. Mater. Sci.: Mater. Electron. 12, 387-393 (2001).
[CrossRef]

Main, P. C.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

Markiewicz, R. S.

R. S. Markiewicz and L. A. Harris, "Two-dimensional resistivity of ultrathin metal films," Phys. Rev. Lett. 46, 1149-1153 (1981).
[CrossRef]

Marrows, C. H.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

Martins, R.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

R. Martins and E. Fortunato, "Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors," Thin Solid Films 337, 158-162 (1999).
[CrossRef]

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, "Large-area 1D thin-film position-sensitive detector with high detection resolution," Sens. Actuators A 51,135-142 (1996).

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, "Thin film position sensitive detector based on amorphous silicon p-i-n diode," Rev. Sci. Instrum. 65,3784-3786 (1994).
[CrossRef]

Nogaret, A.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

Nolte, L. P.

D. W. Buhler, T. R. Oxland, and L. P. Nolte, "Design and evaluation of a device for measuring three-dimensional micromotions of press-fit femoral stem prostheses," Med. Eng. Phys. 19, 187-199 (1997).
[CrossRef] [PubMed]

Orlando, T. P.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
[CrossRef]

Overend, N.

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

Oxland, T. R.

D. W. Buhler, T. R. Oxland, and L. P. Nolte, "Design and evaluation of a device for measuring three-dimensional micromotions of press-fit femoral stem prostheses," Med. Eng. Phys. 19, 187-199 (1997).
[CrossRef] [PubMed]

Park, S. L.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
[CrossRef]

Park, W. S.

W. S. Park and H. S. Cho, "Measurement of fine 6-degrees-of-freedom displacement of rigid bodies through splitting a laser beam: experimental investigation," Opt. Eng. 41, 860-871 (2002).
[CrossRef]

Pulfrey, D. L.

D. L. Pulfrey, "MIS solar cells: a review," IEEE Trans. Electron Devices 25, 1308-1317 (1978).
[CrossRef]

Reichel, F.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Rhoderick, E. H.

H. C. Card and E. H. Rhoderick, "Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes," J. Phys. D: Appl. Phys. 4, 1589-1601 (1971).
[CrossRef]

Rosenblum, M. D.

A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
[CrossRef]

Rosenbluth, M. L.

A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
[CrossRef]

Ruzycki, N.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki and U. Diebold, "Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate," J. Appl. Phys. 91, 8411-8413 (2002).
[CrossRef]

Schultze, L.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Shewchun, J.

J. Shewchun, D. Burk and M. B. Spitzer, "MIS and SIS solar cells," IEEE Trans. Electron Devices 27, 705-716 (1980).
[CrossRef]

J. Shewchun, R. Singh and M. A. Green, "Theory of metal-insulator-semiconductor solar cells," J. Appl. Phys. 48, 765-770 (1977).
[CrossRef]

Singh, R.

J. Shewchun, R. Singh and M. A. Green, "Theory of metal-insulator-semiconductor solar cells," J. Appl. Phys. 48, 765-770 (1977).
[CrossRef]

Smith, H. I.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
[CrossRef]

Soares, F.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

E. Fortunato, G. Lavareda, R. Martins, F. Soares, and L. Fernandes, "Large-area 1D thin-film position-sensitive detector with high detection resolution," Sens. Actuators A 51,135-142 (1996).

Spitzer, M. B.

J. Shewchun, D. Burk and M. B. Spitzer, "MIS and SIS solar cells," IEEE Trans. Electron Devices 27, 705-716 (1980).
[CrossRef]

Srivastava, A. K.

A. K. Srivastava, S. Guha, and B. W. Arora, "Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cells," Appl. Phys. Lett. 40, 43-45 (1982).
[CrossRef]

Stam, F.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Stirn, R. J.

R. J. Stirn and Y. C. M. Yeh, "A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell," Appl. Phys. Lett. 27, 95-98 (1975).
[CrossRef]

Tang, J.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki and U. Diebold, "Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate," J. Appl. Phys. 91, 8411-8413 (2002).
[CrossRef]

Teodoro, P.

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Townsend, W. G.

D. R. Lillington and W. G. Townsend, "Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cells," Appl. Phys. Lett. 28, 97-98 (1976).
[CrossRef]

Tufts, B. J.

A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
[CrossRef]

Vieira, M.

E. Fortunato, G. Lavareda, M. Vieira, and R. Martins, "Thin film position sensitive detector based on amorphous silicon p-i-n diode," Rev. Sci. Instrum. 65,3784-3786 (1994).
[CrossRef]

Wang, H.

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "Lateral photovoltaic effect and magnetoresistance observed in Co-SiO2-Si metal-oxide-semiconductor structures," J. Phys. D: Appl. Phys. 40, 6926-6929 (2007).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, "Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si," J. Phys. D: Appl. Phys. 40, 5580-5583 (2007).
[CrossRef]

Wang, K.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki and U. Diebold, "Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate," J. Appl. Phys. 91, 8411-8413 (2002).
[CrossRef]

Wang, Z. H.

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "Lateral photovoltaic effect and magnetoresistance observed in Co-SiO2-Si metal-oxide-semiconductor structures," J. Phys. D: Appl. Phys. 40, 6926-6929 (2007).
[CrossRef]

Willens, R. H.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate," Appl. Phys. Lett. 49, 1537-1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti," Appl. Phys. Lett. 49, 1608-1610 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, "High resolution photovoltaic position sensing with Ti/Si superlattices," Appl. Phys. Lett. 49, 1647-1648 (1986).
[CrossRef]

R. H. Willens, "Photoelectronic and electronic properties of Ti/Si amorphous superlattices," Appl. Phys. Lett. 49, 663-665 (1986).
[CrossRef]

Xia, Y. X.

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, "Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si," J. Phys. D: Appl. Phys. 40, 5580-5583 (2007).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "Lateral photovoltaic effect and magnetoresistance observed in Co-SiO2-Si metal-oxide-semiconductor structures," J. Phys. D: Appl. Phys. 40, 6926-6929 (2007).
[CrossRef]

Xiao, S. Q.

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "Lateral photovoltaic effect and magnetoresistance observed in Co-SiO2-Si metal-oxide-semiconductor structures," J. Phys. D: Appl. Phys. 40, 6926-6929 (2007).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, "Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si," J. Phys. D: Appl. Phys. 40, 5580-5583 (2007).
[CrossRef]

Yang, E. S.

H. C. Card and E. S. Yang, "MIS-Schottky theory under conditions of optical carrier generation in solar cells," Appl. Phys. Lett. 29, 51-53 (1976).
[CrossRef]

Yeh, Y. C. M.

R. J. Stirn and Y. C. M. Yeh, "A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell," Appl. Phys. Lett. 27, 95-98 (1975).
[CrossRef]

Yen, A.

P. F. Bagwell, S. L. Park, A. Yen, D. A. Antoniadis, H. I. Smith, T. P. Orlando and M. A. Kastner, "Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas," Phys. Rev. B. 45, 9214-9221 (1992).
[CrossRef]

Zhao, Z. C.

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "Lateral photovoltaic effect and magnetoresistance observed in Co-SiO2-Si metal-oxide-semiconductor structures," J. Phys. D: Appl. Phys. 40, 6926-6929 (2007).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, "Large lateral photoeffect observed in metal-semiconductor junctions of CoxMnyO films and Si," J. Phys. D: Appl. Phys. 40, 5580-5583 (2007).
[CrossRef]

Zhou, W.

J. Tang, J. Dai, K. Wang, W. Zhou, N. Ruzycki and U. Diebold, "Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate," J. Appl. Phys. 91, 8411-8413 (2002).
[CrossRef]

Adv. Eng. Mater. (1)

R. Martins, P. Teodoro, F. Soares, I. Ferreiral, N. Guimaraes, E. Fortunato, J. Borges, G. Jose, A. Groth, L. Schultze, D. Berndt, F. Reichel, and F. Stam, "Application of amorphous silicon thin-film position-sensitive detector to optical rules," Adv. Eng. Mater. 3, 174-177 (2001).
[CrossRef]

Appl. Opt. (1)

Appl. Phys. Lett. (11)

D. R. Lillington and W. G. Townsend, "Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cells," Appl. Phys. Lett. 28, 97-98 (1976).
[CrossRef]

R. B. Godfrey and M. A. Green, "655 mV open-circuit voltage, 17.6% efficient silicon MIS solar cells," Appl. Phys. Lett. 34, 790-793 (1979).
[CrossRef]

A. K. Srivastava, S. Guha, and B. W. Arora, "Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cells," Appl. Phys. Lett. 40, 43-45 (1982).
[CrossRef]

A. Kumar, M. D. Rosenblum, D. L. Gilmore, B. J. Tufts, M. L. Rosenbluth, and N. S. Lewis, "Fabrication of minority-carrier-limited n-Si/insulator/metal diodes," Appl. Phys. Lett. 56, 1919-1921 (1990).
[CrossRef]

R. H. Willens, "Photoelectronic and electronic properties of Ti/Si amorphous superlattices," Appl. Phys. Lett. 49, 663-665 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate," Appl. Phys. Lett. 49, 1537-1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, "Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti," Appl. Phys. Lett. 49, 1608-1610 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, "High resolution photovoltaic position sensing with Ti/Si superlattices," Appl. Phys. Lett. 49, 1647-1648 (1986).
[CrossRef]

R. J. Stirn and Y. C. M. Yeh, "A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell," Appl. Phys. Lett. 27, 95-98 (1975).
[CrossRef]

H. C. Card and E. S. Yang, "MIS-Schottky theory under conditions of optical carrier generation in solar cells," Appl. Phys. Lett. 29, 51-53 (1976).
[CrossRef]

N. Overend, A. Nogaret, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, M. A. Howson, and S. P. Beaumont, "Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices," Appl. Phys. Lett. 72, 1724-1726 (1998).
[CrossRef]

IEEE Trans. Electron Devices (2)

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Figures (7)

Fig. 1.
Fig. 1.

A three-dimensional schematic illustration of the LPV measurement using fixed electrodes and a variable light spot position.

Fig. 2.
Fig. 2.

(online colour at: www.pss-a.com) AFM images (1 µm × 1 µm) of Co films with different thicknesses deposited on SiO2/Si substrates: (a) 1.6 nm; (b) 3.2 nm; (c) 6.4 nm and (d) 12 nm.

Fig. 3.
Fig. 3.

Three-dimensional plot of the LPV as a function of the laser spot in the Co film plane for Co3.2 nm-SiO2-Si.

Fig. 4.
Fig. 4.

LPV as a function of the laser position (x) observed in Co film planes with different thickness for y = 0. The lines are guides for the eye.

Fig. 5.
Fig. 5.

Schematic simple equilibrium energy-band diagram of the Co-SiO2-Si MOS system with a n-type semiconductor substrate. Egi and Egs denote the bandgap of SiO2 and Si respectively. Φmi is the metal-to-insulator barrier height and is related to work function of Co. ΦSi is the semiconductor-to-insulator barrier height and is related to work function of Si. The semiconductor from interface (SiO2/ Si) to bulk can be divided into three regions: the inversion layer, depletion region and neutral region as illustrated.

Fig. 6.
Fig. 6.

The position sensitivity and effective resistivity as functions of the thickness of the metal film for (a) Co-SiO2-Si and (b) Cu-SiO2-Si structures. The inset in (a) shows a schematic simple physical mode for the shorting effect of the metal film. The arrows show the lateral diffusions of photo-generated carriers.

Fig. 7.
Fig. 7.

I-V curves of Co3.2 nm-SiO2-Si and Co6.4 nm-SiO2-Si measured at 300 K.

Tables (1)

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Table 1. Results of Co-SiO2-Si MOS structures with different Co film thicknesses.

Equations (1)

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Nonlinearity = δ = 2 s F = 2 × RMS deviation Measured full scale .

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