Abstract

Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm.

© 2008 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
    [CrossRef]
  2. L. Lembo, F. Alvares, D. Lo, C. Tu, P. Wisseman, C. Zmudzinski, and J. Brock, "Optical electroabsorption modulators for wideband, linear, low-insertion loss photonic links," Proc. SPIE Photon. Device Eng. Dual-Use Appl. 2481, 185-196 (1995).
  3. S. S. Lee, R. V. Ramaswamy, and V. S. Sundaram, "Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator," IEEE J. Quantum Electron. 27, 726 (1991).
    [CrossRef]
  4. D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
    [CrossRef]
  5. S. Schmitt-Rink, D. A. B. Miller, and D. S. Chemla, "Theory of the linear and nonlinear optical properties of semiconductor microcrystallites," Phys. Rev. B 35, 8113 (1987).
    [CrossRef]
  6. K. Shimomura, S. Arai, and Y. Suematsu, "Operational wavelength range of GaInAs(P)-lnP intersectional optical switch using fieldinduced electrooptic effect in low-dimensional quantum-well structures,’’IEEE J. Quantum Electron. 28, 471-478 (1992).
    [CrossRef]
  7. L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
    [CrossRef]
  8. O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998).
    [CrossRef]
  9. S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
    [CrossRef]
  10. J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007).
    [CrossRef]
  11. G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
    [CrossRef]
  12. A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
    [CrossRef]
  13. S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992).
    [CrossRef]

2007

J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007).
[CrossRef]

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

2003

A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
[CrossRef]

2001

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
[CrossRef]

1998

O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998).
[CrossRef]

1996

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
[CrossRef]

1993

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

1992

K. Shimomura, S. Arai, and Y. Suematsu, "Operational wavelength range of GaInAs(P)-lnP intersectional optical switch using fieldinduced electrooptic effect in low-dimensional quantum-well structures,’’IEEE J. Quantum Electron. 28, 471-478 (1992).
[CrossRef]

S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992).
[CrossRef]

1991

S. S. Lee, R. V. Ramaswamy, and V. S. Sundaram, "Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator," IEEE J. Quantum Electron. 27, 726 (1991).
[CrossRef]

1987

S. Schmitt-Rink, D. A. B. Miller, and D. S. Chemla, "Theory of the linear and nonlinear optical properties of semiconductor microcrystallites," Phys. Rev. B 35, 8113 (1987).
[CrossRef]

1984

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Arai, S.

K. Shimomura, S. Arai, and Y. Suematsu, "Operational wavelength range of GaInAs(P)-lnP intersectional optical switch using fieldinduced electrooptic effect in low-dimensional quantum-well structures,’’IEEE J. Quantum Electron. 28, 471-478 (1992).
[CrossRef]

Bhattacharya, P.

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
[CrossRef]

O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998).
[CrossRef]

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

Brock, T.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

Burrus, C. A.

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Chemla, D. S.

S. Schmitt-Rink, D. A. B. Miller, and D. S. Chemla, "Theory of the linear and nonlinear optical properties of semiconductor microcrystallites," Phys. Rev. B 35, 8113 (1987).
[CrossRef]

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Chen, J. X.

A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
[CrossRef]

Cong, D.Y.

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

Damer, T. C.

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Davis, L.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

Dutt, M. V. G

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
[CrossRef]

Fiore, A.

A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
[CrossRef]

Gauthier-Lafaye, O.

A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
[CrossRef]

Ghosh, S.

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
[CrossRef]

Gossard, A. C.

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Huffaker, D. L.

J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007).
[CrossRef]

Inoue, H.

S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992).
[CrossRef]

Ishida, K.

S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992).
[CrossRef]

Kamath, K.

O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998).
[CrossRef]

Ko, K. K.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

Laghumavarapu, R. B.

J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007).
[CrossRef]

Lam, Y.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

Lee, S. S.

S. S. Lee, R. V. Ramaswamy, and V. S. Sundaram, "Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator," IEEE J. Quantum Electron. 27, 726 (1991).
[CrossRef]

Lemaître, A.

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

Lenihan, A.S

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
[CrossRef]

Li, W.-Q.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

Liu, Y. Z.

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
[CrossRef]

Markus, A.

A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
[CrossRef]

Martinez, A.

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

Merghem, K.

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

Miard, A.

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

Miller, D. A. B.

S. Schmitt-Rink, D. A. B. Miller, and D. S. Chemla, "Theory of the linear and nonlinear optical properties of semiconductor microcrystallites," Phys. Rev. B 35, 8113 (1987).
[CrossRef]

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Moreau, G.

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

Nishimura, S.

S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992).
[CrossRef]

Nuntawong, N.

J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007).
[CrossRef]

Pang, S. W.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

Pappert, S. A.

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
[CrossRef]

Paranthoen, C.

A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
[CrossRef]

Phillips, J.

O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998).
[CrossRef]

Platz, C.

A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
[CrossRef]

Qasaimeh, O

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
[CrossRef]

Qasaimeh, O.

O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998).
[CrossRef]

Ramaswamy, R. V.

S. S. Lee, R. V. Ramaswamy, and V. S. Sundaram, "Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator," IEEE J. Quantum Electron. 27, 726 (1991).
[CrossRef]

Sano, H.

S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992).
[CrossRef]

Schmitt-Rink, S.

S. Schmitt-Rink, D. A. B. Miller, and D. S. Chemla, "Theory of the linear and nonlinear optical properties of semiconductor microcrystallites," Phys. Rev. B 35, 8113 (1987).
[CrossRef]

Shimomura, K.

K. Shimomura, S. Arai, and Y. Suematsu, "Operational wavelength range of GaInAs(P)-lnP intersectional optical switch using fieldinduced electrooptic effect in low-dimensional quantum-well structures,’’IEEE J. Quantum Electron. 28, 471-478 (1992).
[CrossRef]

Steel, D. G

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
[CrossRef]

Suematsu, Y.

K. Shimomura, S. Arai, and Y. Suematsu, "Operational wavelength range of GaInAs(P)-lnP intersectional optical switch using fieldinduced electrooptic effect in low-dimensional quantum-well structures,’’IEEE J. Quantum Electron. 28, 471-478 (1992).
[CrossRef]

Sun, C. K.

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
[CrossRef]

Sun, H. C.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

Sundaram, V. S.

S. S. Lee, R. V. Ramaswamy, and V. S. Sundaram, "Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator," IEEE J. Quantum Electron. 27, 726 (1991).
[CrossRef]

Tatebayashi, J.

J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007).
[CrossRef]

Voisin, P.

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

Weigmann, W.

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Welstand, R. B.

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
[CrossRef]

Wood, T. H.

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Yu, P. K. L.

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
[CrossRef]

Zhu, J. T.

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
[CrossRef]

Appl. Phys. Lett.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993).
[CrossRef]

O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998).
[CrossRef]

G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007).
[CrossRef]

A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003).
[CrossRef]

Electron. Lett.

J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007).
[CrossRef]

IEEE J. Quantum Electron.

K. Shimomura, S. Arai, and Y. Suematsu, "Operational wavelength range of GaInAs(P)-lnP intersectional optical switch using fieldinduced electrooptic effect in low-dimensional quantum-well structures,’’IEEE J. Quantum Electron. 28, 471-478 (1992).
[CrossRef]

S. S. Lee, R. V. Ramaswamy, and V. S. Sundaram, "Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator," IEEE J. Quantum Electron. 27, 726 (1991).
[CrossRef]

IEEE Photon. Technol. Lett.

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996).
[CrossRef]

S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992).
[CrossRef]

J. Vac. Sci. Technol. B

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001).
[CrossRef]

Phys. Rev. B

S. Schmitt-Rink, D. A. B. Miller, and D. S. Chemla, "Theory of the linear and nonlinear optical properties of semiconductor microcrystallites," Phys. Rev. B 35, 8113 (1987).
[CrossRef]

Phys. Rev. Lett.

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984).
[CrossRef]

Other

L. Lembo, F. Alvares, D. Lo, C. Tu, P. Wisseman, C. Zmudzinski, and J. Brock, "Optical electroabsorption modulators for wideband, linear, low-insertion loss photonic links," Proc. SPIE Photon. Device Eng. Dual-Use Appl. 2481, 185-196 (1995).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1.
Fig. 1.

Detailed structure of the samples used in the measurements. Al0.7Ga0.3As layers at the GaAs interfaces are graded.

Fig. 2.
Fig. 2.

(a) Fabry-Perot resonances at 1515 nm for 6 Volt reverse bias. The dots show the experimental data and the line indicates the optimum curve fit. (b) Voltage dependent shift of Fabry-Perot resonances. Significant tuning is observed with relatively low voltages.

Fig. 3.
Fig. 3.

Variation in refractive index as a function of applied voltage at 1515 nm. The dots show the experimental data and the line indicates the linear fit.

Fig. 4.
Fig. 4.

Change in absorption due to applied reverse bias. Red shift of the spectra should be noted with increasing applied voltage.

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

Δ n e ( V ) = 1 2 n e 3 r 41 V t Γ
α T = 10 log ( r 2 1 + K 1 K )

Metrics